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PDS1045-13-2477 PDS1045-13-2477 Diodes Incorporated Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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PDS3100-13-2477 PDS3100-13-2477 Diodes Incorporated Description: DIODE SCHOTTKY 100V 3A POWERDI 5
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PDS1040L-13-2477 PDS1040L-13-2477 Diodes Incorporated Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 600 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PDS4200H-13-2477 PDS4200H-13-2477 Diodes Incorporated Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 4A
Technology: Schottky
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PDS1040-13-2477 PDS1040-13-2477 Diodes Incorporated Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DMP2110UQ-7 DMP2110UQ-7 Diodes Incorporated DMP2110UQ.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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100+0.3 EUR
500+0.25 EUR
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DMTH46M7SFVW-13 DMTH46M7SFVW-13 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
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DMTH46M7SFVW-13 DMTH46M7SFVW-13 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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DMTH48M3SFVW-13 DMTH48M3SFVW-13 Diodes Incorporated DMTH48M3SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMT47M2SFVW-13 DMT47M2SFVW-13 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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FL2500338 FL2500338 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 20PF SMD
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 50 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±10ppm
Frequency Stability: ±15ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 20pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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BC857CQ-7-F BC857CQ-7-F Diodes Incorporated BC857CQ.pdf Description: TRANS PNP SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
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BC857CQ-7-F BC857CQ-7-F Diodes Incorporated BC857CQ.pdf Description: TRANS PNP SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
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SRX7303(T) Diodes Incorporated Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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SRX7304(T) Diodes Incorporated Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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SMCJ12CAQ-13-F SMCJ12CAQ-13-F Diodes Incorporated SMCJ5.0CAQ_SMCJ110CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.3A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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3.0SMCJ12CA-13 3.0SMCJ12CA-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.8A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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DZT5551Q-13 DZT5551Q-13 Diodes Incorporated DZT5551Q.pdf Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DZT5551Q-13 DZT5551Q-13 Diodes Incorporated DZT5551Q.pdf Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BZX84C15Q-13-F BZX84C15Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 15V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
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AH8502-FDC-EVM Diodes Incorporated AH8502.pdf Description: EVAL BRD HALL LINEAR UA NULL
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: AH8502
Sensor Type: Hall Effect
Voltage - Supply: 1.6V ~ 3.6V
Interface: Analog
Packaging: Box
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ZXT10N15DE6TA ZXT10N15DE6TA Diodes Incorporated ZXT10N15DE6.pdf Description: TRANS NPN 15V 4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-26
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.1 W
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AC847CQ-7 AC847CQ-7 Diodes Incorporated Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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AC847CQ-7 AC847CQ-7 Diodes Incorporated Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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74LVC1G02Z-7 74LVC1G02Z-7 Diodes Incorporated 74LVC1G02.pdf Description: IC NOR 1-CIR 2-IN SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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74LVC1G02Z-7 74LVC1G02Z-7 Diodes Incorporated 74LVC1G02.pdf Description: IC NOR 1-CIR 2-IN SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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ZXTR2008Z-7 ZXTR2008Z-7 Diodes Incorporated ZXTR2008Z.pdf Description: IC REG LINEAR 8.2V 42MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 42mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 8.2V
Grade: Automotive
PSRR: 38dB (100Hz)
Current - Supply (Max): 900 µA
Qualification: AEC-Q101
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ZXTR2008Z-7 ZXTR2008Z-7 Diodes Incorporated ZXTR2008Z.pdf Description: IC REG LINEAR 8.2V 42MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 42mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 8.2V
Grade: Automotive
PSRR: 38dB (100Hz)
Current - Supply (Max): 900 µA
Qualification: AEC-Q101
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DMP2004WK-7 DMP2004WK-7 Diodes Incorporated ds30931.pdf Description: MOSFET P-CH 20V 400MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004WK-7 DMP2004WK-7 Diodes Incorporated ds30931.pdf Description: MOSFET P-CH 20V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004UFG-13 Diodes Incorporated Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
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DMP2004UFG-7 Diodes Incorporated Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
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DMP2004KQ-7 DMP2004KQ-7 Diodes Incorporated DMP2004K_Rev10_Feb2018.pdf Description: DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
Produkt ist nicht verfügbar
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DMP2004TK-7-79 DMP2004TK-7-79 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 230mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
Produkt ist nicht verfügbar
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DMP2004TK DMP2004TK Diodes Incorporated ds30932.pdf Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 230mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
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DSS5160TQ-7 DSS5160TQ-7 Diodes Incorporated DSS5160TQ.pdf Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
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DSS5160TQ-7 DSS5160TQ-7 Diodes Incorporated DSS5160TQ.pdf Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
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DMN10H120SFG-13 DMN10H120SFG-13 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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DMN10H120SFG-13 DMN10H120SFG-13 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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LF431OCRPA Diodes Incorporated Description: IC VREF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LF431NCRPA Diodes Incorporated Description: IC VREF
Packaging: Tape & Reel (TR)
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LT432NCRPA Diodes Incorporated Description: IC
Packaging: Bulk
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LT432OCRPA Diodes Incorporated Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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FK7060001 FK7060001 Diodes Incorporated FK7060001.pdf Description: XTAL OSC XO 70.6560MHZ CMOS
Supplier Device Package: 4-VDFN (3.2x2.5)
Base Resonator: Crystal
Frequency: 70.656 MHz
Height - Seated (Max): 0.045" (1.15mm)
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: CMOS
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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DMN3300UQ-7 DMN3300UQ-7 Diodes Incorporated DMN3300UQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
Qualification: AEC-Q101
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74LVC07AT14-13 74LVC07AT14-13 Diodes Incorporated 74LVC07A.pdf Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
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PI3B3251LEX PI3B3251LEX Diodes Incorporated PI3B3251.pdf Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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PI3B3251LEX PI3B3251LEX Diodes Incorporated PI3B3251.pdf Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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PI3B3251LE PI3B3251LE Diodes Incorporated PI3B3251.pdf Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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DMP4051LK3Q-13 DMP4051LK3Q-13 Diodes Incorporated DMP4051LK3.pdf Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Qualification: AEC-Q101
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PI6LC48C51LIEX Diodes Incorporated PI6LC48C51.pdf Description: 78.125M/156.25M CMOS SYNTHESIZER
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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PI6LC48C51LIE Diodes Incorporated PI6LC48C51.pdf Description: 78.125M/156.25M CMOS SYNTHESIZER
Packaging: Tube
DigiKey Programmable: Not Verified
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B0520LW-7-F-2477 B0520LW-7-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXMP3F30FHTA ZXMP3F30FHTA Diodes Incorporated ZXMP3F30FH.pdf Description: MOSFET P-CH 30V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
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ZXMP3F30FHTA ZXMP3F30FHTA Diodes Incorporated ZXMP3F30FH.pdf Description: MOSFET P-CH 30V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
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ZXMP4A57E6QTA ZXMP4A57E6QTA Diodes Incorporated ZXMP4A57E6.pdf Description: MOSFET BVDSS: 31V~40V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Qualification: AEC-Q101
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ZXMP4A16GQTA ZXMP4A16GQTA Diodes Incorporated ZXMP4A16G.pdf Description: MOSFET P-CH 40V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
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ZXMP4A16GQTA ZXMP4A16GQTA Diodes Incorporated ZXMP4A16G.pdf Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
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ZXMP3A17DN8TA ZXMP3A17DN8TA Diodes Incorporated ZXMP3A17DN8.pdf Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXCT210BDW-7 ZXCT210BDW-7 Diodes Incorporated ZXCT21x.pdf Description: IC CURRENT MONITOR 0.8% SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PDS1045-13-2477
PDS1045-13-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDS3100-13-2477
PDS3100-13-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 3A POWERDI 5
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PDS1040L-13-2477
PDS1040L-13-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 600 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PDS4200H-13-2477
PDS4200H-13-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 4A
Technology: Schottky
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PDS1040-13-2477
PDS1040-13-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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DMP2110UQ-7 DMP2110UQ.pdf
DMP2110UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3292410 Stücke:
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25+0.86 EUR
36+0.6 EUR
100+0.3 EUR
500+0.25 EUR
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DMTH46M7SFVW-13 DMTH46M7SFVW.pdf
DMTH46M7SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Produkt ist nicht verfügbar
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DMTH46M7SFVW-13 DMTH46M7SFVW.pdf
DMTH46M7SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DMTH48M3SFVW-13 DMTH48M3SFVW.pdf
DMTH48M3SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMT47M2SFVW-13 DMT47M2SFVW.pdf
DMT47M2SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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FL2500338 FL.pdf
FL2500338
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 20PF SMD
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 50 Ohms
Height - Seated (Max): 0.031" (0.78mm)
Operating Mode: Fundamental
Frequency Tolerance: ±10ppm
Frequency Stability: ±15ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 20pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC857CQ-7-F BC857CQ.pdf
BC857CQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC857CQ-7-F BC857CQ.pdf
BC857CQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
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SRX7303(T)
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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SRX7304(T)
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
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SMCJ12CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ12CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 75.3A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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3.0SMCJ12CA-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ12CA-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.8A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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DZT5551Q-13 DZT5551Q.pdf
DZT5551Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DZT5551Q-13 DZT5551Q.pdf
DZT5551Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
25+0.87 EUR
100+0.56 EUR
500+0.43 EUR
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BZX84C15Q-13-F ds18001.pdf
BZX84C15Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.088 EUR
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AH8502-FDC-EVM AH8502.pdf
Hersteller: Diodes Incorporated
Description: EVAL BRD HALL LINEAR UA NULL
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: AH8502
Sensor Type: Hall Effect
Voltage - Supply: 1.6V ~ 3.6V
Interface: Analog
Packaging: Box
Produkt ist nicht verfügbar
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ZXT10N15DE6TA ZXT10N15DE6.pdf
ZXT10N15DE6TA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-26
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.1 W
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3000+0.43 EUR
6000+0.4 EUR
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AC847CQ-7
AC847CQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 321000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.07 EUR
6000+0.065 EUR
9000+0.055 EUR
30000+0.054 EUR
75000+0.048 EUR
150000+0.042 EUR
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AC847CQ-7
AC847CQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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74LVC1G02Z-7 74LVC1G02.pdf
74LVC1G02Z-7
Hersteller: Diodes Incorporated
Description: IC NOR 1-CIR 2-IN SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Produkt ist nicht verfügbar
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74LVC1G02Z-7 74LVC1G02.pdf
74LVC1G02Z-7
Hersteller: Diodes Incorporated
Description: IC NOR 1-CIR 2-IN SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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ZXTR2008Z-7 ZXTR2008Z.pdf
ZXTR2008Z-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 8.2V 42MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 42mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 8.2V
Grade: Automotive
PSRR: 38dB (100Hz)
Current - Supply (Max): 900 µA
Qualification: AEC-Q101
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ZXTR2008Z-7 ZXTR2008Z.pdf
ZXTR2008Z-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 8.2V 42MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 42mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 8.2V
Grade: Automotive
PSRR: 38dB (100Hz)
Current - Supply (Max): 900 µA
Qualification: AEC-Q101
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DMP2004WK-7 ds30931.pdf
DMP2004WK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 400MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004WK-7 ds30931.pdf
DMP2004WK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004UFG-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2004UFG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2004KQ-7 DMP2004K_Rev10_Feb2018.pdf
DMP2004KQ-7
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
Produkt ist nicht verfügbar
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DMP2004TK-7-79
DMP2004TK-7-79
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 230mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
Produkt ist nicht verfügbar
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DMP2004TK ds30932.pdf
DMP2004TK
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 230mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
Produkt ist nicht verfügbar
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DSS5160TQ-7 DSS5160TQ.pdf
DSS5160TQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
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3000+0.27 EUR
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DSS5160TQ-7 DSS5160TQ.pdf
DSS5160TQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
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DMN10H120SFG-13 DMN10H120SFG.pdf
DMN10H120SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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DMN10H120SFG-13 DMN10H120SFG.pdf
DMN10H120SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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LF431OCRPA
Hersteller: Diodes Incorporated
Description: IC VREF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LF431NCRPA
Hersteller: Diodes Incorporated
Description: IC VREF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LT432NCRPA
Hersteller: Diodes Incorporated
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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LT432OCRPA
Hersteller: Diodes Incorporated
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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FK7060001 FK7060001.pdf
FK7060001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 70.6560MHZ CMOS
Supplier Device Package: 4-VDFN (3.2x2.5)
Base Resonator: Crystal
Frequency: 70.656 MHz
Height - Seated (Max): 0.045" (1.15mm)
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: CMOS
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN3300UQ-7 DMN3300UQ.pdf
DMN3300UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
Qualification: AEC-Q101
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3000+0.23 EUR
6000+0.19 EUR
9000+0.17 EUR
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74LVC07AT14-13 74LVC07A.pdf
74LVC07AT14-13
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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PI3B3251LEX PI3B3251.pdf
PI3B3251LEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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2500+0.89 EUR
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PI3B3251LEX PI3B3251.pdf
PI3B3251LEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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10+2.09 EUR
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PI3B3251LE PI3B3251.pdf
PI3B3251LE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 1 X 8:1 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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10+2.09 EUR
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DMP4051LK3Q-13 DMP4051LK3.pdf
DMP4051LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI6LC48C51LIEX PI6LC48C51.pdf
Hersteller: Diodes Incorporated
Description: 78.125M/156.25M CMOS SYNTHESIZER
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI6LC48C51LIE PI6LC48C51.pdf
Hersteller: Diodes Incorporated
Description: 78.125M/156.25M CMOS SYNTHESIZER
Packaging: Tube
DigiKey Programmable: Not Verified
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B0520LW-7-F-2477
B0520LW-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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ZXMP3F30FHTA ZXMP3F30FH.pdf
ZXMP3F30FHTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
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ZXMP3F30FHTA ZXMP3F30FH.pdf
ZXMP3F30FHTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
auf Bestellung 4644 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
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ZXMP4A57E6QTA ZXMP4A57E6.pdf
ZXMP4A57E6QTA
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
6000+0.51 EUR
9000+0.49 EUR
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ZXMP4A16GQTA ZXMP4A16G.pdf
ZXMP4A16GQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 49000 Stücke:
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1000+0.82 EUR
2000+0.76 EUR
3000+0.73 EUR
5000+0.68 EUR
7000+0.65 EUR
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ZXMP4A16GQTA ZXMP4A16G.pdf
ZXMP4A16GQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 49222 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.76 EUR
12+1.75 EUR
100+1.15 EUR
500+0.9 EUR
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ZXMP3A17DN8TA ZXMP3A17DN8.pdf
ZXMP3A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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ZXCT210BDW-7 ZXCT21x.pdf
ZXCT210BDW-7
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 0.8% SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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