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3.0SMCJ45A-13 3.0SMCJ45A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 45VWM 72.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ45AQ-13 3.0SMCJ45AQ-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 45VWM 72.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DDZ6V8ASF-7 DDZ6V8ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 6.46V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
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DDZ6V8ASF-7 DDZ6V8ASF-7 Diodes Incorporated ds31987.pdf Description: DIODE ZENER 6.46V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2.63%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
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PI3EQX7741AIZDEX PI3EQX7741AIZDEX Diodes Incorporated PI3EQX7741-Prod-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX7741AIZDEX PI3EQX7741AIZDEX Diodes Incorporated PI3EQX7741-Prod-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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DMP4012SPSW-13 DMP4012SPSW-13 Diodes Incorporated DMP4012SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3643 pF @ 20 V
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DMP4012SPSWQ-13 DMP4012SPSWQ-13 Diodes Incorporated DMP4012SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3643 pF @ 20 V
Qualification: AEC-Q101
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P6SMAJ43ADFQ-13 P6SMAJ43ADFQ-13 Diodes Incorporated P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Description: TVS DIODE 43VWM 69.4VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BAS21-7-F-W BAS21-7-F-W Diodes Incorporated BAS21.pdf Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAS21-7-F-W BAS21-7-F-W Diodes Incorporated BAS21.pdf Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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DXTP78030DFGQ-7 DXTP78030DFGQ-7 Diodes Incorporated DXTP78030DFGQ.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DXTP78030DFGQ-7 DXTP78030DFGQ-7 Diodes Incorporated DXTP78030DFGQ.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DMN10H220LDV-13 DMN10H220LDV-13 Diodes Incorporated DMN10H220LDV.pdf Description: MOSFET 2N-CH 100V PWRDI3333
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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74AHCT14T14-13 74AHCT14T14-13 Diodes Incorporated 74AHCT14.pdf Description: IC INV 6-CIR 1-IN 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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74AHCT14T14-13 74AHCT14T14-13 Diodes Incorporated 74AHCT14.pdf Description: IC INV 6-CIR 1-IN 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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BC56-16PAWQ-7 BC56-16PAWQ-7 Diodes Incorporated BC56-16PAWQ.pdf Description: TRANS NPN 80V 1A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: AEC-Q101
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SD09A240E SD09A240E Diodes Incorporated SD09A-E_Series.pdf Description: THYRISTOR DO-41 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Voltage - Breakover: 220 ~ 250V
Current - Breakover: 35 µA
Supplier Device Package: DO-41
Current - Peak Output: 900 mA
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SD09A240E SD09A240E Diodes Incorporated SD09A-E_Series.pdf Description: THYRISTOR DO-41 T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Voltage - Breakover: 220 ~ 250V
Current - Breakover: 35 µA
Supplier Device Package: DO-41
Current - Peak Output: 900 mA
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SD1A220E SD1A220E Diodes Incorporated SD1A220E.PDF Description: THYRISTOR DO-41 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-41
Current - Peak Output: 1 A
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SD1A220E SD1A220E Diodes Incorporated SD1A220E.PDF Description: THYRISTOR DO-41 T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-41
Current - Peak Output: 1 A
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SD1A220G SD1A220G Diodes Incorporated SD1A220G.PDF Description: THYRISTOR DO-15 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-15
Current - Peak Output: 1 A
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SD1A220G SD1A220G Diodes Incorporated SD1A220G.PDF Description: THYRISTOR DO-15 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-15
Current - Peak Output: 1 A
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SD1A220A SD1A220A Diodes Incorporated SD1A220A.PDF Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
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SD1A220A SD1A220A Diodes Incorporated SD1A220A.PDF Description: THYRISTOR SMA T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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BAS40TWQ-7-F Diodes Incorporated Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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BAS40TW-7-F-2477 Diodes Incorporated Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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B190Q-13-F B190Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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B190Q-13-F B190Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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B190AE-13 B190AE-13 Diodes Incorporated B170AE%2CBE-B1100AE%2CBE.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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B190BE-13 B190BE-13 Diodes Incorporated B170AE%2CBE-B1100AE%2CBE.pdf Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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GB1920007 GB1920007 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 19.2000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 19.2 MHz
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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BZX84B27Q-7-F BZX84B27Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
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BAV99-7-F-W Diodes Incorporated BAV99.pdf Description: FAST SWITCHING DIODE SOT23 T&R 3
Packaging: Tape & Reel (TR)
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DPC816S-C-TR DPC816S-C-TR Diodes Incorporated DPC816+Series.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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PD3Z284C3V6-7 PD3Z284C3V6-7 Diodes Incorporated PD3Z284C2V4_PD3Z284C39.pdf Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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PD3Z284C3V6-7 PD3Z284C3V6-7 Diodes Incorporated PD3Z284C2V4_PD3Z284C39.pdf Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BC817-40FHW-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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GPR340W6-7 Diodes Incorporated Description: ACDC SYNCH RECT CONT SOT26 T&R 3
Packaging: Tape & Reel (TR)
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GBPC2508W Diodes Incorporated GBPC25005-2510_W.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBRB20200CT MBRB20200CT Diodes Incorporated MBRB20200CT.pdf Description: DIODE ARR SCHOTT 200V 10A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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BC846A-7-F-W BC846A-7-F-W Diodes Incorporated BC846A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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BC846A-7-F-W BC846A-7-F-W Diodes Incorporated BC846A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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UX7BF62007 Diodes Incorporated UX7BF62007.pdf Description: CRYSTAL OSCILLATOR SEAM7050 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
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PI4ULS3V204LEX PI4ULS3V204LEX Diodes Incorporated PI4ULS3V204.pdf Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
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PI4ULS3V204LEX PI4ULS3V204LEX Diodes Incorporated PI4ULS3V204.pdf Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
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BZT52C6V8LPQ-7 BZT52C6V8LPQ-7 Diodes Incorporated BZT52C6V8LPQ-BZT52C16LPQ.pdf Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Bulk
Tolerance: ±5.88%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: X1-DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
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S2KDFQ-13 S2KDFQ-13 Diodes Incorporated S2KDFQ.pdf Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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S2KDFQ-13 S2KDFQ-13 Diodes Incorporated S2KDFQ.pdf Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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PI3EQX32904Q3ZREX PI3EQX32904Q3ZREX Diodes Incorporated PI3EQX32904Q.pdf Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
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PI3EQX32904Q3ZREX PI3EQX32904Q3ZREX Diodes Incorporated PI3EQX32904Q.pdf Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
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74AHC32T14-13 74AHC32T14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32T14-13 74AHC32T14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32S14-13 74AHC32S14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32S14-13 74AHC32S14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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GBPC1510W Diodes Incorporated ds21208.pdf Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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3.0SMCJ45A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ45A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 45VWM 72.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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3.0SMCJ45AQ-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ45AQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 45VWM 72.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DDZ6V8ASF-7 ds31987.pdf
DDZ6V8ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.46V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
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DDZ6V8ASF-7 ds31987.pdf
DDZ6V8ASF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.46V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2.63%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
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PI3EQX7741AIZDEX PI3EQX7741-Prod-Brief.pdf
PI3EQX7741AIZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX7741AIZDEX PI3EQX7741-Prod-Brief.pdf
PI3EQX7741AIZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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DMP4012SPSW-13 DMP4012SPSW.pdf
DMP4012SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3643 pF @ 20 V
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DMP4012SPSWQ-13 DMP4012SPSWQ.pdf
DMP4012SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3643 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMAJ43ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
P6SMAJ43ADFQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 43VWM 69.4VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS21-7-F-W BAS21.pdf
BAS21-7-F-W
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAS21-7-F-W BAS21.pdf
BAS21-7-F-W
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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DXTP78030DFGQ-7 DXTP78030DFGQ.pdf
DXTP78030DFGQ-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DXTP78030DFGQ-7 DXTP78030DFGQ.pdf
DXTP78030DFGQ-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DMN10H220LDV-13 DMN10H220LDV.pdf
DMN10H220LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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74AHCT14T14-13 74AHCT14.pdf
74AHCT14T14-13
Hersteller: Diodes Incorporated
Description: IC INV 6-CIR 1-IN 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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74AHCT14T14-13 74AHCT14.pdf
74AHCT14T14-13
Hersteller: Diodes Incorporated
Description: IC INV 6-CIR 1-IN 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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BC56-16PAWQ-7 BC56-16PAWQ.pdf
BC56-16PAWQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: AEC-Q101
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SD09A240E SD09A-E_Series.pdf
SD09A240E
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-41 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Voltage - Breakover: 220 ~ 250V
Current - Breakover: 35 µA
Supplier Device Package: DO-41
Current - Peak Output: 900 mA
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5000+0.14 EUR
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SD09A240E SD09A-E_Series.pdf
SD09A240E
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-41 T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Voltage - Breakover: 220 ~ 250V
Current - Breakover: 35 µA
Supplier Device Package: DO-41
Current - Peak Output: 900 mA
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SD1A220E SD1A220E.PDF
SD1A220E
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-41 T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-41
Current - Peak Output: 1 A
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5000+0.15 EUR
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SD1A220E SD1A220E.PDF
SD1A220E
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-41 T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-41
Current - Peak Output: 1 A
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SD1A220G SD1A220G.PDF
SD1A220G
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-15 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-15
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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SD1A220G SD1A220G.PDF
SD1A220G
Hersteller: Diodes Incorporated
Description: THYRISTOR DO-15 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: DO-15
Current - Peak Output: 1 A
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SD1A220A SD1A220A.PDF
SD1A220A
Hersteller: Diodes Incorporated
Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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SD1A220A SD1A220A.PDF
SD1A220A
Hersteller: Diodes Incorporated
Description: THYRISTOR SMA T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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BAS40TWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS40TW-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Produkt ist nicht verfügbar
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B190Q-13-F B170Q-B1100Q.pdf
B190Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B190Q-13-F B170Q-B1100Q.pdf
B190Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
auf Bestellung 4102 Stücke:
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AnzahlPrivatkunde
16+1.32 EUR
26+0.81 EUR
31+0.68 EUR
50+0.6 EUR
100+0.52 EUR
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B190AE-13 B170AE%2CBE-B1100AE%2CBE.pdf
B190AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Produkt ist nicht verfügbar
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B190BE-13 B170AE%2CBE-B1100AE%2CBE.pdf
B190BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Produkt ist nicht verfügbar
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GB1920007 GB_GG.pdf
GB1920007
Hersteller: Diodes Incorporated
Description: CRYSTAL 19.2000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 19.2 MHz
Produkt ist nicht verfügbar
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BZX84B27-7-F BZX84Bxxx.pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
auf Bestellung 3000 Stücke:
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3000+0.093 EUR
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BZX84B27-7-F BZX84Bxxx.pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
auf Bestellung 5045 Stücke:
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46+0.46 EUR
75+0.29 EUR
121+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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BZX84B27Q-7-F BZX84Bxxx.pdf
BZX84B27Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99-7-F-W BAV99.pdf
Hersteller: Diodes Incorporated
Description: FAST SWITCHING DIODE SOT23 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DPC816S-C-TR DPC816+Series.pdf
DPC816S-C-TR
Hersteller: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 8351 Stücke:
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53+0.39 EUR
85+0.25 EUR
104+0.2 EUR
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PD3Z284C3V6-7 PD3Z284C2V4_PD3Z284C39.pdf
PD3Z284C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 3000 Stücke:
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3000+0.36 EUR
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PD3Z284C3V6-7 PD3Z284C2V4_PD3Z284C39.pdf
PD3Z284C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
23+0.95 EUR
27+0.79 EUR
50+0.69 EUR
100+0.61 EUR
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BC817-40FHW-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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GPR340W6-7
Hersteller: Diodes Incorporated
Description: ACDC SYNCH RECT CONT SOT26 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBPC2508W GBPC25005-2510_W.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MBRB20200CT MBRB20200CT.pdf
MBRB20200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 10A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
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BC846A-7-F-W BC846A.pdf
BC846A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.082 EUR
9000+0.069 EUR
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BC846A-7-F-W BC846A.pdf
BC846A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
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53+0.39 EUR
89+0.24 EUR
108+0.19 EUR
125+0.17 EUR
144+0.14 EUR
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UX7BF62007 UX7BF62007.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM7050 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PI4ULS3V204LEX PI4ULS3V204.pdf
PI4ULS3V204LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
Produkt ist nicht verfügbar
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PI4ULS3V204LEX PI4ULS3V204.pdf
PI4ULS3V204LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
auf Bestellung 3216 Stücke:
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13+1.62 EUR
19+1.15 EUR
25+1.05 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
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BZT52C6V8LPQ-7 BZT52C6V8LPQ-BZT52C16LPQ.pdf
BZT52C6V8LPQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Bulk
Tolerance: ±5.88%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: X1-DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S2KDFQ-13 S2KDFQ.pdf
S2KDFQ-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 1340000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.19 EUR
20000+0.17 EUR
50000+0.15 EUR
100000+0.14 EUR
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S2KDFQ-13 S2KDFQ.pdf
S2KDFQ-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 1342727 Stücke:
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22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.24 EUR
5000+0.2 EUR
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PI3EQX32904Q3ZREX PI3EQX32904Q.pdf
PI3EQX32904Q3ZREX
Hersteller: Diodes Incorporated
Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PI3EQX32904Q3ZREX PI3EQX32904Q.pdf
PI3EQX32904Q3ZREX
Hersteller: Diodes Incorporated
Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2617 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.8 EUR
10+17.02 EUR
25+15.82 EUR
50+15.09 EUR
100+14.49 EUR
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74AHC32T14-13 74AHC32.pdf
74AHC32T14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 15000 Stücke:
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2500+0.15 EUR
12500+0.14 EUR
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74AHC32T14-13 74AHC32.pdf
74AHC32T14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 17431 Stücke:
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53+0.39 EUR
79+0.26 EUR
90+0.24 EUR
105+0.2 EUR
250+0.18 EUR
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74AHC32S14-13 74AHC32.pdf
74AHC32S14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74AHC32S14-13 74AHC32.pdf
74AHC32S14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 2467 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
65+0.32 EUR
73+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
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GBPC1510W ds21208.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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