Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (31126) > Seite 214 nach 519
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| DI79L18UAB | DIOTEC SEMICONDUCTOR |
DI79L18UAB-DIO Fixed voltage regulators |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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| DI79L18ZAB | DIOTEC SEMICONDUCTOR |
DI79L18ZAB-DIO Fixed voltage regulators |
auf Bestellung 1437 Stücke: Lieferzeit 7-14 Tag (e) |
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| DI79L24DAB | DIOTEC SEMICONDUCTOR |
DI79L24DAB-DIO Fixed voltage regulators |
auf Bestellung 3990 Stücke: Lieferzeit 7-14 Tag (e) |
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| DI79L24UAB | DIOTEC SEMICONDUCTOR |
DI79L24UAB-DIO Fixed voltage regulators |
auf Bestellung 1245 Stücke: Lieferzeit 7-14 Tag (e) |
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| DI79L24ZAB | DIOTEC SEMICONDUCTOR |
DI79L24ZAB-DIO Fixed voltage regulators |
auf Bestellung 1797 Stücke: Lieferzeit 7-14 Tag (e) |
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DI7A5N65D2K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 25A Power dissipation: 62.5W Case: D2PAK; TO263AB Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF065SIC020 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 300A Power dissipation: 550W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF065SIC030 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 74A Pulsed drain current: 105A Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 30mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF075F065 | DIOTEC SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 385W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 385W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal Turn-on time: 52ns Turn-off time: 172ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC022-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 28mΩ Mounting: THT Gate charge: 269nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC022 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 28mΩ Mounting: THT Gate charge: 269nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC028 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 295A Power dissipation: 715W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 26mΩ Mounting: THT Gate charge: 373nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC053-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC053 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT050N06 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 90A Power dissipation: 85W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1033 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT080N08-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 51A Pulsed drain current: 480A Power dissipation: 62.5W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT090N06 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 62A Pulsed drain current: 310A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1992 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIT095N08 | DIOTEC SEMICONDUCTOR |
DIT095N08-DIO THT N channel transistors |
auf Bestellung 900 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT100N10 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Pulsed drain current: 380A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 795 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT120N08 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Case: TO220AB Gate charge: 163nC Heatsink thickness: max. 1.2mm On-state resistance: 4.9mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 84A Type of transistor: N-MOSFET Power dissipation: 220W Pulsed drain current: 450A Kind of channel: enhancement Mounting: THT Kind of package: tube Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 686 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT150N03 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 600A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 679 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIT195N08 | DIOTEC SEMICONDUCTOR |
DIT195N08-DIO THT N channel transistors |
auf Bestellung 875 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW018N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 60A Power dissipation: 155W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW030F135 | DIOTEC SEMICONDUCTOR |
DIW030F135-DIO THT IGBT transistors |
auf Bestellung 377 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW030M060 | DIOTEC SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 150W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 150W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 227ns Turn-on time: 124ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW040F135 | DIOTEC SEMICONDUCTOR |
DIW040F135-DIO THT IGBT transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW040M120 | DIOTEC SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 330W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 330nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 337ns Turn-on time: 69ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 432 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW050F065 | DIOTEC SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 350W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 78nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 168ns Turn-off time: 245ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW065SIC015 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 300A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -4...15V On-state resistance: 16mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW065SIC049 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 135A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW085N06 | DIOTEC SEMICONDUCTOR |
DIW085N06-DIO THT N channel transistors |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC022-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Mounting: THT Case: TO247-3 Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 269nC On-state resistance: 28mΩ Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Drain-source voltage: 1.2kV Kind of package: tube Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC023-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W Case: TO247-3 Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 45nC On-state resistance: 29mΩ Drain current: 100A Pulsed drain current: 260A Power dissipation: 600W Drain-source voltage: 1.2kV Application: automotive industry Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW120SIC028 | DIOTEC SEMICONDUCTOR | DIW120SIC028-DIO THT N channel transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC059-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Case: TO247-3 Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 121nC On-state resistance: 65mΩ Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Drain-source voltage: 1.2kV Application: automotive industry Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW170SIC049 | DIOTEC SEMICONDUCTOR | DIW170SIC049-DIO THT N channel transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| DIW170SIC750 | DIOTEC SEMICONDUCTOR |
DIW170SIC750-DIO THT N channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| EAL1D | DIOTEC SEMICONDUCTOR |
EAL1D-DIO SMD universal diodes |
auf Bestellung 1470 Stücke: Lieferzeit 7-14 Tag (e) |
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| EAL1G | DIOTEC SEMICONDUCTOR |
EAL1G-DIO SMD universal diodes |
auf Bestellung 1910 Stücke: Lieferzeit 7-14 Tag (e) |
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| EAL1J | DIOTEC SEMICONDUCTOR |
EAL1J-DIO SMD universal diodes |
auf Bestellung 2420 Stücke: Lieferzeit 7-14 Tag (e) |
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| EAL1M | DIOTEC SEMICONDUCTOR |
EAL1M-DIO SMD universal diodes |
auf Bestellung 2025 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1A | DIOTEC SEMICONDUCTOR |
EGL1A-DIO SMD universal diodes |
auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1B | DIOTEC SEMICONDUCTOR | EGL1B-DIO SMD universal diodes |
auf Bestellung 9090 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1D | DIOTEC SEMICONDUCTOR |
EGL1D-DIO SMD universal diodes |
auf Bestellung 23170 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: MiniMELF plastic Max. forward voltage: 1.35V Max. forward impulse current: 25A Leakage current: 5µA Kind of package: reel; tape Max. load current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 105160 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1J | DIOTEC SEMICONDUCTOR |
EGL1J-DIO SMD universal diodes |
auf Bestellung 16941 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1K | DIOTEC SEMICONDUCTOR |
EGL1K-DIO SMD universal diodes |
auf Bestellung 2325 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL1M | DIOTEC SEMICONDUCTOR |
EGL1M-DIO SMD universal diodes |
auf Bestellung 10812 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL34A | DIOTEC SEMICONDUCTOR |
EGL34A-DIO SMD universal diodes |
auf Bestellung 1470 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL34B | DIOTEC SEMICONDUCTOR |
EGL34B-DIO SMD universal diodes |
auf Bestellung 3242 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL34D | DIOTEC SEMICONDUCTOR |
EGL34D-DIO SMD universal diodes |
auf Bestellung 1625 Stücke: Lieferzeit 7-14 Tag (e) |
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| EGL34G | DIOTEC SEMICONDUCTOR | EGL34G-DIO SMD universal diodes |
auf Bestellung 7775 Stücke: Lieferzeit 7-14 Tag (e) |
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EM513-AQ | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Case: DO41 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.1V Max. load current: 5.4A Max. off-state voltage: 1.6kV Max. forward impulse current: 27A Kind of package: Ammo Pack Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3516 Stücke: Lieferzeit 7-14 Tag (e) |
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EM513 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Case: DO41 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 1.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.1V Max. load current: 5.4A Max. off-state voltage: 1.6kV Max. forward impulse current: 27A Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53780 Stücke: Lieferzeit 7-14 Tag (e) |
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EM516 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41 Max. forward voltage: 1.1V Reverse recovery time: 1.5µs Max. load current: 5.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3832 Stücke: Lieferzeit 7-14 Tag (e) |
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EM518 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41 Max. forward voltage: 1.1V Reverse recovery time: 1.5µs Max. load current: 5.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19165 Stücke: Lieferzeit 7-14 Tag (e) |
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| ER1A | DIOTEC SEMICONDUCTOR |
ER1A-DIO SMD universal diodes |
auf Bestellung 7060 Stücke: Lieferzeit 7-14 Tag (e) |
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| ER1B | DIOTEC SEMICONDUCTOR |
ER1B-DIO SMD universal diodes |
auf Bestellung 2681 Stücke: Lieferzeit 7-14 Tag (e) |
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| ER1D-AQ | DIOTEC SEMICONDUCTOR | ER1D-AQ-DIO SMD universal diodes |
auf Bestellung 6424 Stücke: Lieferzeit 7-14 Tag (e) |
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| ER1D | DIOTEC SEMICONDUCTOR |
ER1D-DIO SMD universal diodes |
auf Bestellung 3702 Stücke: Lieferzeit 7-14 Tag (e) |
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| DI79L18UAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L18UAB-DIO Fixed voltage regulators
DI79L18UAB-DIO Fixed voltage regulators
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 245+ | 0.29 EUR |
| 463+ | 0.16 EUR |
| 3000+ | 0.11 EUR |
| DI79L18ZAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L18ZAB-DIO Fixed voltage regulators
DI79L18ZAB-DIO Fixed voltage regulators
auf Bestellung 1437 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 241+ | 0.3 EUR |
| 928+ | 0.077 EUR |
| 983+ | 0.073 EUR |
| 50000+ | 0.07 EUR |
| DI79L24DAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L24DAB-DIO Fixed voltage regulators
DI79L24DAB-DIO Fixed voltage regulators
auf Bestellung 3990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 472+ | 0.15 EUR |
| 667+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 4000+ | 0.097 EUR |
| DI79L24UAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L24UAB-DIO Fixed voltage regulators
DI79L24UAB-DIO Fixed voltage regulators
auf Bestellung 1245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 288+ | 0.25 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| DI79L24ZAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L24ZAB-DIO Fixed voltage regulators
DI79L24ZAB-DIO Fixed voltage regulators
auf Bestellung 1797 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 233+ | 0.31 EUR |
| 928+ | 0.077 EUR |
| 983+ | 0.073 EUR |
| 10000+ | 0.07 EUR |
| DI7A5N65D2K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 25A
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 25A
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 46+ | 1.57 EUR |
| 48+ | 1.49 EUR |
| 100+ | 1.24 EUR |
| 800+ | 1.2 EUR |
| DIF065SIC020 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.84 EUR |
| 10+ | 31.97 EUR |
| 30+ | 29.1 EUR |
| DIF065SIC030 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 74A
Pulsed drain current: 105A
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 74A
Pulsed drain current: 105A
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.94 EUR |
| 5+ | 22.88 EUR |
| 10+ | 20.89 EUR |
| 30+ | 17.73 EUR |
| DIF075F065 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 385W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 385W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Turn-on time: 52ns
Turn-off time: 172ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 385W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 385W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Turn-on time: 52ns
Turn-off time: 172ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 10+ | 7.15 EUR |
| 30+ | 3.55 EUR |
| 120+ | 2.97 EUR |
| 240+ | 2.83 EUR |
| DIF120SIC022-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 65.61 EUR |
| 10+ | 60.78 EUR |
| DIF120SIC022 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 40.76 EUR |
| 5+ | 37.91 EUR |
| 10+ | 36.41 EUR |
| 30+ | 32.79 EUR |
| 60+ | 30.46 EUR |
| 120+ | 28.79 EUR |
| DIF120SIC028 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 295A
Power dissipation: 715W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 373nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 295A
Power dissipation: 715W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 373nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 32.36 EUR |
| 10+ | 28.89 EUR |
| 30+ | 27.1 EUR |
| DIF120SIC053-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 26.37 EUR |
| 10+ | 24.21 EUR |
| 30+ | 23.8 EUR |
| DIF120SIC053 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.17 EUR |
| DIT050N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1033 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 84+ | 0.86 EUR |
| 91+ | 0.79 EUR |
| 118+ | 0.61 EUR |
| 130+ | 0.55 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.44 EUR |
| DIT080N08-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 51A
Pulsed drain current: 480A
Power dissipation: 62.5W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 51A
Pulsed drain current: 480A
Power dissipation: 62.5W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.1 EUR |
| 500+ | 1.43 EUR |
| DIT090N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 62A
Pulsed drain current: 310A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 62A
Pulsed drain current: 310A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1992 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 89+ | 0.81 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| 500+ | 0.59 EUR |
| DIT095N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT095N08-DIO THT N channel transistors
DIT095N08-DIO THT N channel transistors
auf Bestellung 900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.78 EUR |
| 108+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 5000+ | 0.61 EUR |
| DIT100N10 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 380A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 380A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 65+ | 1.1 EUR |
| DIT120N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Case: TO220AB
Gate charge: 163nC
Heatsink thickness: max. 1.2mm
On-state resistance: 4.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Type of transistor: N-MOSFET
Power dissipation: 220W
Pulsed drain current: 450A
Kind of channel: enhancement
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Case: TO220AB
Gate charge: 163nC
Heatsink thickness: max. 1.2mm
On-state resistance: 4.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Type of transistor: N-MOSFET
Power dissipation: 220W
Pulsed drain current: 450A
Kind of channel: enhancement
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 686 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.65 EUR |
| 47+ | 1.53 EUR |
| 54+ | 1.33 EUR |
| 100+ | 1.24 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.96 EUR |
| DIT150N03 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 679 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 50+ | 1.43 EUR |
| 62+ | 1.17 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.78 EUR |
| 2000+ | 0.7 EUR |
| DIT195N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT195N08-DIO THT N channel transistors
DIT195N08-DIO THT N channel transistors
auf Bestellung 875 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 37+ | 1.94 EUR |
| 39+ | 1.84 EUR |
| 1000+ | 1.77 EUR |
| DIW018N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.33 EUR |
| 14+ | 5.13 EUR |
| 30+ | 3.88 EUR |
| 120+ | 2.9 EUR |
| DIW030F135 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW030F135-DIO THT IGBT transistors
DIW030F135-DIO THT IGBT transistors
auf Bestellung 377 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.56 EUR |
| 21+ | 3.47 EUR |
| 22+ | 3.29 EUR |
| 120+ | 3.26 EUR |
| DIW030M060 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 227ns
Turn-on time: 124ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 227ns
Turn-on time: 124ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.05 EUR |
| 25+ | 2.86 EUR |
| 30+ | 2.39 EUR |
| 120+ | 1.66 EUR |
| DIW040F135 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW040F135-DIO THT IGBT transistors
DIW040F135-DIO THT IGBT transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 8+ | 8.94 EUR |
| 30+ | 6.44 EUR |
| DIW040M120 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 330W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 337ns
Turn-on time: 69ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 330W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 337ns
Turn-on time: 69ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 432 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.24 EUR |
| 12+ | 6.25 EUR |
| 30+ | 4.88 EUR |
| 120+ | 4.38 EUR |
| DIW050F065 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 168ns
Turn-off time: 245ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 168ns
Turn-off time: 245ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.62 EUR |
| 20+ | 3.69 EUR |
| 25+ | 2.9 EUR |
| 30+ | 2.76 EUR |
| 120+ | 1.93 EUR |
| 450+ | 1.87 EUR |
| DIW065SIC015 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -4...15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -4...15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 32.35 EUR |
| 10+ | 28.86 EUR |
| 30+ | 27.1 EUR |
| DIW065SIC049 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 135A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 135A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.7 EUR |
| 5+ | 17.43 EUR |
| 10+ | 16.52 EUR |
| 30+ | 14.29 EUR |
| 120+ | 12.11 EUR |
| DIW085N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW085N06-DIO THT N channel transistors
DIW085N06-DIO THT N channel transistors
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.9 EUR |
| 22+ | 3.28 EUR |
| 24+ | 3.1 EUR |
| 600+ | 3.03 EUR |
| DIW120SIC022-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 269nC
On-state resistance: 28mΩ
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Drain-source voltage: 1.2kV
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 269nC
On-state resistance: 28mΩ
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Drain-source voltage: 1.2kV
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 65.61 EUR |
| 10+ | 60.78 EUR |
| DIW120SIC023-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W
Case: TO247-3
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 45nC
On-state resistance: 29mΩ
Drain current: 100A
Pulsed drain current: 260A
Power dissipation: 600W
Drain-source voltage: 1.2kV
Application: automotive industry
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W
Case: TO247-3
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 45nC
On-state resistance: 29mΩ
Drain current: 100A
Pulsed drain current: 260A
Power dissipation: 600W
Drain-source voltage: 1.2kV
Application: automotive industry
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 84.74 EUR |
| 10+ | 82.58 EUR |
| DIW120SIC028 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW120SIC028-DIO THT N channel transistors
DIW120SIC028-DIO THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 43.19 EUR |
| 3+ | 26.71 EUR |
| DIW120SIC059-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Case: TO247-3
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 121nC
On-state resistance: 65mΩ
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Drain-source voltage: 1.2kV
Application: automotive industry
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Case: TO247-3
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 121nC
On-state resistance: 65mΩ
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Drain-source voltage: 1.2kV
Application: automotive industry
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 26.37 EUR |
| 10+ | 24.21 EUR |
| 30+ | 23.64 EUR |
| DIW170SIC049 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW170SIC049-DIO THT N channel transistors
DIW170SIC049-DIO THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.88 EUR |
| 5+ | 17.85 EUR |
| DIW170SIC750 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW170SIC750-DIO THT N channel transistors
DIW170SIC750-DIO THT N channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 23+ | 3.2 EUR |
| 24+ | 3.03 EUR |
| EAL1D |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1D-DIO SMD universal diodes
EAL1D-DIO SMD universal diodes
auf Bestellung 1470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 569+ | 0.13 EUR |
| 1232+ | 0.058 EUR |
| 1303+ | 0.055 EUR |
| EAL1G |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1G-DIO SMD universal diodes
EAL1G-DIO SMD universal diodes
auf Bestellung 1910 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 569+ | 0.13 EUR |
| 1194+ | 0.06 EUR |
| 1263+ | 0.057 EUR |
| EAL1J |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1J-DIO SMD universal diodes
EAL1J-DIO SMD universal diodes
auf Bestellung 2420 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 516+ | 0.14 EUR |
| 1119+ | 0.064 EUR |
| 1185+ | 0.06 EUR |
| EAL1M |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1M-DIO SMD universal diodes
EAL1M-DIO SMD universal diodes
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 353+ | 0.2 EUR |
| 983+ | 0.073 EUR |
| 1040+ | 0.069 EUR |
| EGL1A |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL1A-DIO SMD universal diodes
EGL1A-DIO SMD universal diodes
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 317+ | 0.23 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 50000+ | 0.034 EUR |
| EGL1B |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1B-DIO SMD universal diodes
EGL1B-DIO SMD universal diodes
auf Bestellung 9090 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 327+ | 0.22 EUR |
| 1793+ | 0.04 EUR |
| 1894+ | 0.038 EUR |
| EGL1D |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL1D-DIO SMD universal diodes
EGL1D-DIO SMD universal diodes
auf Bestellung 23170 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 275+ | 0.26 EUR |
| 1480+ | 0.048 EUR |
| 1563+ | 0.046 EUR |
| EGL1G |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Max. load current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Max. load current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 477+ | 0.15 EUR |
| 682+ | 0.1 EUR |
| 876+ | 0.082 EUR |
| 1000+ | 0.073 EUR |
| 2500+ | 0.063 EUR |
| 7500+ | 0.053 EUR |
| EGL1J |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL1J-DIO SMD universal diodes
EGL1J-DIO SMD universal diodes
auf Bestellung 16941 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 1413+ | 0.051 EUR |
| 1498+ | 0.048 EUR |
| EGL1K |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL1K-DIO SMD universal diodes
EGL1K-DIO SMD universal diodes
auf Bestellung 2325 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 910+ | 0.079 EUR |
| 1389+ | 0.051 EUR |
| 1467+ | 0.049 EUR |
| EGL1M |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL1M-DIO SMD universal diodes
EGL1M-DIO SMD universal diodes
auf Bestellung 10812 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 410+ | 0.17 EUR |
| 1341+ | 0.053 EUR |
| 1421+ | 0.05 EUR |
| 25000+ | 0.049 EUR |
| EGL34A |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL34A-DIO SMD universal diodes
EGL34A-DIO SMD universal diodes
auf Bestellung 1470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1470+ | 0.049 EUR |
| 2458+ | 0.029 EUR |
| EGL34B |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL34B-DIO SMD universal diodes
EGL34B-DIO SMD universal diodes
auf Bestellung 3242 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 884+ | 0.081 EUR |
| 2184+ | 0.033 EUR |
| 2305+ | 0.031 EUR |
| 50000+ | 0.03 EUR |
| EGL34D |
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Hersteller: DIOTEC SEMICONDUCTOR
EGL34D-DIO SMD universal diodes
EGL34D-DIO SMD universal diodes
auf Bestellung 1625 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 1588+ | 0.045 EUR |
| 1625+ | 0.044 EUR |
| 7500+ | 0.041 EUR |
| EGL34G |
Hersteller: DIOTEC SEMICONDUCTOR
EGL34G-DIO SMD universal diodes
EGL34G-DIO SMD universal diodes
auf Bestellung 7775 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1083+ | 0.066 EUR |
| 1651+ | 0.043 EUR |
| 1749+ | 0.041 EUR |
| EM513-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 5.4A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 5.4A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3516 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 603+ | 0.12 EUR |
| 772+ | 0.093 EUR |
| 867+ | 0.083 EUR |
| 1021+ | 0.07 EUR |
| 1169+ | 0.061 EUR |
| 1352+ | 0.053 EUR |
| EM513 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 5.4A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 5.4A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53780 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 770+ | 0.093 EUR |
| 1194+ | 0.06 EUR |
| 1588+ | 0.045 EUR |
| 1780+ | 0.04 EUR |
| 2000+ | 0.036 EUR |
| 5000+ | 0.031 EUR |
| EM516 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Max. load current: 5.4A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Max. load current: 5.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3832 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 944+ | 0.076 EUR |
| 1142+ | 0.063 EUR |
| 1241+ | 0.058 EUR |
| 5000+ | 0.047 EUR |
| 10000+ | 0.043 EUR |
| EM518 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Max. load current: 5.4A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Max. load current: 5.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19165 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1042+ | 0.069 EUR |
| 1197+ | 0.06 EUR |
| 1273+ | 0.056 EUR |
| 1458+ | 0.049 EUR |
| 1544+ | 0.046 EUR |
| 5000+ | 0.041 EUR |
| ER1A |
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Hersteller: DIOTEC SEMICONDUCTOR
ER1A-DIO SMD universal diodes
ER1A-DIO SMD universal diodes
auf Bestellung 7060 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 752+ | 0.095 EUR |
| 1401+ | 0.051 EUR |
| 1480+ | 0.048 EUR |
| ER1B |
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Hersteller: DIOTEC SEMICONDUCTOR
ER1B-DIO SMD universal diodes
ER1B-DIO SMD universal diodes
auf Bestellung 2681 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 217+ | 0.33 EUR |
| 1480+ | 0.048 EUR |
| 1563+ | 0.046 EUR |
| ER1D-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
ER1D-AQ-DIO SMD universal diodes
ER1D-AQ-DIO SMD universal diodes
auf Bestellung 6424 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 222+ | 0.32 EUR |
| 1299+ | 0.055 EUR |
| 1374+ | 0.052 EUR |
| ER1D |
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Hersteller: DIOTEC SEMICONDUCTOR
ER1D-DIO SMD universal diodes
ER1D-DIO SMD universal diodes
auf Bestellung 3702 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 824+ | 0.087 EUR |
| 1454+ | 0.049 EUR |
| 1539+ | 0.046 EUR |

















