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DB25-01 DB25-01 Diotec Semiconductor db25005.pdf Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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DB35-02 DB35-02 Diotec Semiconductor db35005.pdf Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MMFTP3008AK MMFTP3008AK Diotec Semiconductor mmftp3008ak.pdf Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
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MMFTP3160 MMFTP3160 Diotec Semiconductor mmftp3160.pdf Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
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MMFTP3160-AQ MMFTP3160-AQ Diotec Semiconductor mmftp3160.pdf Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
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MMFTP6341KW MMFTP6341KW Diotec Semiconductor mmftp6341kw.pdf Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
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2CL72A 2CL72A Diotec Semiconductor 2cl72a.pdf Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
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2CL72A 2CL72A Diotec Semiconductor 2cl72a.pdf Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
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SB520 SB520 Diotec Semiconductor sb520.pdf Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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BZX84C7V5 BZX84C7V5 Diotec Semiconductor bzx84c2v4.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
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BZX84C7V5 BZX84C7V5 Diotec Semiconductor bzx84c2v4.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
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3991.31.2 3991.31.2 Diotec Semiconductor 3991.31.2.pdf Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
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BC817K-40 BC817K-40 Diotec Semiconductor bc817k.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K-40 BC817K-40 Diotec Semiconductor bc817k.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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DIW050F065 DIW050F065 Diotec Semiconductor diw050f065.pdf Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
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GBU12D GBU12D Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBU12K GBU12K Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU12J GBU12J Diotec Semiconductor gbu12a.pdf Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU12A GBU12A Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 8.4A 50V GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU12G GBU12G Diotec Semiconductor gbu12a.pdf Description: BRIDGE 1-PH GBU 400V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GBU12B GBU12B Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 100V 8.4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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DI075N04PT-AQ DI075N04PT-AQ Diotec Semiconductor di075n04pt.pdf Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
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DI075N04PT-AQ DI075N04PT-AQ Diotec Semiconductor di075n04pt.pdf Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
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ZMM4B7 ZMM4B7 Diotec Semiconductor zmm1-2p.pdf Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
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ZMM4B7 ZMM4B7 Diotec Semiconductor zmm1-2p.pdf Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
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BYG23T BYG23T Diotec Semiconductor byg23t.pdf Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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BYG23T-AQ BYG23T-AQ Diotec Semiconductor byg23t.pdf Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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PPS1045-3G PPS1045-3G Diotec Semiconductor pps1045-3g.pdf Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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PPS1045-3G PPS1045-3G Diotec Semiconductor pps1045-3g.pdf Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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S1A-CT S1A-CT Diotec Semiconductor s1a.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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SL54-3G SL54-3G Diotec Semiconductor sl52-3g.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
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SL54-3G SL54-3G Diotec Semiconductor sl52-3g.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
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P600S P600S Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 1200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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P600S P600S Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 1200V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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BZT52B8V2 BZT52B8V2 Diotec Semiconductor bzt52b2v4.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
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BZT52B8V2 BZT52B8V2 Diotec Semiconductor bzt52b2v4.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
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3.0SMCJ100A 3.0SMCJ100A Diotec Semiconductor 30smcj50.pdf Description: TVS DIODE 100VWM 162VC DO-214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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5.0SMCJ100A 5.0SMCJ100A Diotec Semiconductor 50smcj50.pdf Description: TVS DIODE 100VWM 162VC DO-214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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S1M-AQ S1M-AQ Diotec Semiconductor s1a.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1M-AQ S1M-AQ Diotec Semiconductor s1a.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FR20DAD2 FR20DAD2 Diotec Semiconductor fr20aad2.pdf Description: DIODE GEN PURP 200V 20A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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P4KE6.8CA P4KE6.8CA Diotec Semiconductor p4ke68.pdf Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE6.8CA P4KE6.8CA Diotec Semiconductor p4ke68.pdf Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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HV1.5 HV1.5 Diotec Semiconductor hv15.pdf Description: DIODE GP 1500V 0.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
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HV1.5 HV1.5 Diotec Semiconductor hv15.pdf Description: DIODE GP 1500V 0.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
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F12K120 F12K120 Diotec Semiconductor f12k120.pdf Description: DIODE GEN PURP 120V 12A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 120 V
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FE6B FE6B Diotec Semiconductor fe6a.pdf Description: DIODE GEN PURP 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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MMBTRA105SS MMBTRA105SS Diotec Semiconductor mmbtra101ss.pdf Description: BIASED BJT SOT-23 PNP 2200OHM
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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S3G S3G Diotec Semiconductor s3a.pdf Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
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S3G S3G Diotec Semiconductor s3a.pdf Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
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SMS190 SMS190 Diotec Semiconductor sms120.pdf Description: DIODE SCHOTTKY 90V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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SMS190 SMS190 Diotec Semiconductor sms120.pdf Description: DIODE SCHOTTKY 90V 1A MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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S3Y S3Y Diotec Semiconductor s3a.pdf Description: DIODE GEN PURP 2000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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S3Y S3Y Diotec Semiconductor s3a.pdf Description: DIODE GEN PURP 2000V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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SM4000 SM4000 Diotec Semiconductor sm3000.pdf Description: DIODE STANDARD 4000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
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SM4000 SM4000 Diotec Semiconductor sm3000.pdf Description: DIODE STANDARD 4000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
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S5Y-AQ S5Y-AQ Diotec Semiconductor s5a.pdf Description: DIODE GEN PURP 2000V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
Qualification: AEC-Q101
auf Bestellung 1675 Stücke:
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14+1.56 EUR
25+1.31 EUR
100+1.04 EUR
250+0.89 EUR
500+0.81 EUR
1000+0.74 EUR
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SA157 SA157 Diotec Semiconductor sa154.pdf Description: DIODE STANDARD 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SA157 SA157 Diotec Semiconductor sa154.pdf Description: DIODE STANDARD 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2669 Stücke:
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ZMY10 ZMY10 Diotec Semiconductor zmy1.pdf Description: DIODE ZENER 10V 1.3W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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DB25-01 db25005.pdf
DB25-01
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1600 Stücke:
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DB35-02 db35005.pdf
DB35-02
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 50 Stücke:
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MMFTP3008AK mmftp3008ak.pdf
MMFTP3008AK
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
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MMFTP3160 mmftp3160.pdf
MMFTP3160
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Produkt ist nicht verfügbar
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MMFTP3160-AQ mmftp3160.pdf
MMFTP3160-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMFTP6341KW mmftp6341kw.pdf
MMFTP6341KW
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Produkt ist nicht verfügbar
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2CL72A 2cl72a.pdf
2CL72A
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
auf Bestellung 2999 Stücke:
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23+0.94 EUR
36+0.58 EUR
50+0.43 EUR
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2CL72A 2cl72a.pdf
2CL72A
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
Produkt ist nicht verfügbar
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SB520 sb520.pdf
SB520
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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BZX84C7V5 bzx84c2v4.pdf
BZX84C7V5
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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BZX84C7V5 bzx84c2v4.pdf
BZX84C7V5
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
auf Bestellung 752 Stücke:
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77+0.27 EUR
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210+0.1 EUR
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3991.31.2 3991.31.2.pdf
3991.31.2
Hersteller: Diotec Semiconductor
Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
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BC817K-40 bc817k.pdf
BC817K-40
Hersteller: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K-40 bc817k.pdf
BC817K-40
Hersteller: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
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165+0.13 EUR
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DIW050F065 diw050f065.pdf
DIW050F065
Hersteller: Diotec Semiconductor
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
auf Bestellung 317 Stücke:
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GBU12D gbu12a.pdf
GBU12D
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 989 Stücke:
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GBU12K gbu12a.pdf
GBU12K
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU12J gbu12a.pdf
GBU12J
Hersteller: Diotec Semiconductor
Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 999 Stücke:
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5+5.21 EUR
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GBU12A gbu12a.pdf
GBU12A
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 8.4A 50V GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 994 Stücke:
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GBU12G gbu12a.pdf
GBU12G
Hersteller: Diotec Semiconductor
Description: BRIDGE 1-PH GBU 400V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 993 Stücke:
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GBU12B gbu12a.pdf
GBU12B
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8.4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 913 Stücke:
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DI075N04PT-AQ di075n04pt.pdf
DI075N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DI075N04PT-AQ di075n04pt.pdf
DI075N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4445 Stücke:
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13+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
2000+0.75 EUR
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ZMM4B7 zmm1-2p.pdf
ZMM4B7
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
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ZMM4B7 zmm1-2p.pdf
ZMM4B7
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
auf Bestellung 1760 Stücke:
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AnzahlPrivatkunde
77+0.27 EUR
105+0.2 EUR
114+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
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BYG23T byg23t.pdf
BYG23T
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 7475 Stücke:
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24+0.88 EUR
40+0.54 EUR
48+0.44 EUR
100+0.33 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
2500+0.2 EUR
5000+0.18 EUR
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BYG23T-AQ byg23t.pdf
BYG23T-AQ
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PPS1045-3G pps1045-3g.pdf
PPS1045-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
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PPS1045-3G pps1045-3g.pdf
PPS1045-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 4904 Stücke:
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14+1.57 EUR
22+0.98 EUR
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S1A-CT s1a.pdf
S1A-CT
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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SL54-3G sl52-3g.pdf
SL54-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
Produkt ist nicht verfügbar
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SL54-3G sl52-3g.pdf
SL54-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
auf Bestellung 2522 Stücke:
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33+0.65 EUR
41+0.52 EUR
100+0.35 EUR
500+0.3 EUR
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P600S p600a.pdf
P600S
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 963 Stücke:
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P600S p600a.pdf
P600S
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1200V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 1000 Stücke:
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1000+0.38 EUR
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BZT52B8V2 bzt52b2v4.pdf
BZT52B8V2
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 3000 Stücke:
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3000+0.069 EUR
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BZT52B8V2 bzt52b2v4.pdf
BZT52B8V2
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 4479 Stücke:
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59+0.36 EUR
98+0.21 EUR
138+0.15 EUR
159+0.13 EUR
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3.0SMCJ100A 30smcj50.pdf
3.0SMCJ100A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 100VWM 162VC DO-214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5.0SMCJ100A 50smcj50.pdf
5.0SMCJ100A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 100VWM 162VC DO-214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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S1M-AQ s1a.pdf
S1M-AQ
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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S1M-AQ s1a.pdf
S1M-AQ
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 4740 Stücke:
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100+0.21 EUR
143+0.14 EUR
211+0.1 EUR
500+0.075 EUR
1000+0.067 EUR
2000+0.06 EUR
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FR20DAD2 fr20aad2.pdf
FR20DAD2
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 20A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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P4KE6.8CA p4ke68.pdf
P4KE6.8CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3705 Stücke:
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18+1.21 EUR
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50+0.54 EUR
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P4KE6.8CA p4ke68.pdf
P4KE6.8CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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HV1.5 hv15.pdf
HV1.5
Hersteller: Diotec Semiconductor
Description: DIODE GP 1500V 0.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Produkt ist nicht verfügbar
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HV1.5 hv15.pdf
HV1.5
Hersteller: Diotec Semiconductor
Description: DIODE GP 1500V 0.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.1 EUR
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F12K120 f12k120.pdf
F12K120
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 120V 12A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 120 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+4.44 EUR
500+2.53 EUR
1000+1.56 EUR
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FE6B fe6a.pdf
FE6B
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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MMBTRA105SS mmbtra101ss.pdf
MMBTRA105SS
Hersteller: Diotec Semiconductor
Description: BIASED BJT SOT-23 PNP 2200OHM
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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S3G s3a.pdf
S3G
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
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S3G s3a.pdf
S3G
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
auf Bestellung 4703 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
85+0.25 EUR
100+0.21 EUR
500+0.15 EUR
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SMS190 sms120.pdf
SMS190
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 90V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Produkt ist nicht verfügbar
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SMS190 sms120.pdf
SMS190
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 90V 1A MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 3245 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
53+0.39 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.19 EUR
2000+0.17 EUR
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S3Y s3a.pdf
S3Y
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 2000V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Produkt ist nicht verfügbar
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S3Y s3a.pdf
S3Y
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 2000V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 1640 Stücke:
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AnzahlPrivatkunde
13+1.68 EUR
19+1.12 EUR
100+0.77 EUR
500+0.61 EUR
1000+0.56 EUR
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SM4000 sm3000.pdf
SM4000
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 4000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.42 EUR
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SM4000 sm3000.pdf
SM4000
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 4000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
auf Bestellung 7149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.14 EUR
50+0.83 EUR
100+0.74 EUR
500+0.57 EUR
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S5Y-AQ s5a.pdf
S5Y-AQ
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 2000V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
Qualification: AEC-Q101
auf Bestellung 1675 Stücke:
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AnzahlPrivatkunde
9+2.48 EUR
14+1.56 EUR
25+1.31 EUR
100+1.04 EUR
250+0.89 EUR
500+0.81 EUR
1000+0.74 EUR
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SA157 sa154.pdf
SA157
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SA157 sa154.pdf
SA157
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2669 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
64+0.33 EUR
101+0.21 EUR
500+0.2 EUR
1000+0.18 EUR
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ZMY10 zmy1.pdf
ZMY10
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 10V 1.3W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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