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DIW050F065

DIW050F065 DIOTEC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF94E5DD5AE5EEA0D6&compId=diw050f065.pdf?ci_sign=6625632b77861b51157cb0b6da5fd8cde7851493 Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 168ns
Turn-off time: 245ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.62 EUR
20+3.69 EUR
25+2.9 EUR
30+2.76 EUR
120+1.93 EUR
450+1.87 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DIW050F065 DIOTEC SEMICONDUCTOR

Description: IGBT, TO-247-3L, 650V, 50A, 300A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 38 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 36ns/125ns, Switching Energy: 3mJ (on), 1.1mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 78 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 350 W.

Weitere Produktangebote DIW050F065 nach Preis ab 1.93 EUR bis 9.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DIW050F065 DIW050F065 Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF94E5DD5AE5EEA0D6&compId=diw050f065.pdf?ci_sign=6625632b77861b51157cb0b6da5fd8cde7851493 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 168ns
Turn-off time: 245ns
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
20+3.69 EUR
25+2.9 EUR
30+2.76 EUR
120+1.93 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DIW050F065 DIW050F065 Hersteller : Diotec Semiconductor diw050f065.pdf Description: IGBT, TO-247-3L, 650V, 50A, 300A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
30+3.52 EUR
120+2.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DIW050F065 DIW050F065 Hersteller : Diotec Semiconductor diw050f065.pdf IGBTs IGBT, TO-247-3L, 650V, 50A, 300A, 0
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.08 EUR
10+7.09 EUR
120+4.26 EUR
510+3.36 EUR
1020+3.26 EUR
2520+2.97 EUR
5010+2.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH