MMFTP6341KW Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-363 P -30V -5A
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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Technische Details MMFTP6341KW Diotec Semiconductor
Description: MOSFET SOT-363 P -30V -5A, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMFTP6341KW | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-363, -30V, -5A, 150C, P |
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