FE6B DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; Ammo Pack; Ifsm: 200A; P600; Ir: 5uA
Type of diode: rectifying
Case: P600
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.98V
Leakage current: 5µA
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Reverse recovery time: 50ns
Max. load current: 50A
Features of semiconductor devices: superfast switching
| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 250+ | 0.29 EUR |
| 313+ | 0.23 EUR |
| 348+ | 0.21 EUR |
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Technische Details FE6B DIOTEC SEMICONDUCTOR
Description: DIODE GEN PURP 100V 6A P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote FE6B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FE6B | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 100V 6A P600 Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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FE6B | Hersteller : Diotec Semiconductor |
Rectifiers Diode, Superfast, P600, 100V, 6A, 175C |
Produkt ist nicht verfügbar |