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Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 304+ | 0.24 EUR |
| 321+ | 0.22 EUR |
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Technische Details FE6B DIOTEC SEMICONDUCTOR
Description: DIODE GEN PURP 100V 6A P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote FE6B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FE6B | Hersteller : Diotec Semiconductor |
 Description: DIODE GEN PURP 100V 6A P600Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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