Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (32462) > Seite 221 nach 542
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DI79L15ZAB | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: -17.5...-30V Kind of package: bulk Manufacturer series: DI79LxxZAB Tolerance: ±5% Voltage drop: 1.7V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1402 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L18DAB | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; SO8; SMD; 0÷125°C Mounting: SMD Operating temperature: 0...125°C Case: SO8 Tolerance: ±5% Output voltage: -18V Output current: 0.1A Voltage drop: 1.7V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: -20.5...-33V Kind of package: reel; tape Manufacturer series: DI79LxxDAB Kind of voltage regulator: fixed; linear Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3664 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L18UAB | DIOTEC SEMICONDUCTOR |
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auf Bestellung 975 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L18ZAB | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1680 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L24DAB | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; SO8; SMD; 0÷125°C Mounting: SMD Operating temperature: 0...125°C Case: SO8 Tolerance: ±5% Output voltage: -24V Output current: 0.1A Voltage drop: 1.7V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: -27...-38V Kind of package: reel; tape Manufacturer series: DI79LxxDAB Kind of voltage regulator: fixed; linear Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3990 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L24UAB | DIOTEC SEMICONDUCTOR |
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auf Bestellung 515 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L24ZAB | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1863 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79M05D1 | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; -40÷85°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4% Number of channels: 1 Input voltage: -7.5...-25V Manufacturer series: DI79LxxD1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DI79M15D1 | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: DI79LxxD1 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4% Number of channels: 1 Input voltage: -7.5...-25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DI7A5N65D2K-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: D2PAK; TO263AB On-state resistance: 0.43Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Power dissipation: 62.5W Version: ESD Gate charge: 18.4nC Gate-source voltage: ±30V Pulsed drain current: 25A Drain current: 4.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DI7A5N65D2K | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: D2PAK; TO263AB On-state resistance: 0.43Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 62.5W Version: ESD Gate charge: 18.4nC Gate-source voltage: ±30V Pulsed drain current: 25A Drain current: 4.7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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DI7A6N04SQ2 | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DI7A6N10SQ | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DI8A6C03SQ | DIOTEC SEMICONDUCTOR | DI8A6C03SQ-DIO Multi channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DID3A2N65 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 16A Power dissipation: 54W Case: IPAK SL; TO251 Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DIF065SIC020 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 300A Power dissipation: 550W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF065SIC030 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 74A Pulsed drain current: 105A Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 30mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC022-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 269nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 340W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIF120SIC022 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 269nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 340W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DIF120SIC028 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 295A Power dissipation: 715W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 26mΩ Mounting: THT Gate charge: 373nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC053-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIF120SIC053 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIJ2A3N65 | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DIJ4A5N65 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Gate-source voltage: ±30V Pulsed drain current: 28A Drain current: 2.7A Power dissipation: 46W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DIT015N25 | DIOTEC SEMICONDUCTOR | DIT015N25-DIO THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DIT050N06 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 90A Power dissipation: 85W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1282 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT074P05 | DIOTEC SEMICONDUCTOR | DIT074P05-DIO THT P channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIT080N08-AQ | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIT080N08 | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIT085N10 | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIT090N06 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1036 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT095N08 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT100N10 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB Drain-source voltage: 100V Drain current: 80A On-state resistance: 9.9mΩ Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Heatsink thickness: max. 1.2mm Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 380A Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 997 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT120N08 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 856 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT150N03 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 600A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 769 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT195N08 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1073 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW012N65 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.5A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DIW018N65 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 60A Power dissipation: 155W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW030F135 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW030M060 | DIOTEC SEMICONDUCTOR | DIW030M060-DIO THT IGBT transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW030N65K | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 160A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DIW040F135 | DIOTEC SEMICONDUCTOR | DIW040F135-DIO THT IGBT transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW040M120 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 330nC Mounting: THT Collector-emitter voltage: 1.2kV Turn-on time: 69ns Turn-off time: 337ns Type of transistor: IGBT Power dissipation: 330W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 458 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW050F065 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 78nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 245ns Turn-on time: 168ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 355 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW065SIC015 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 300A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -4...15V On-state resistance: 16mΩ Mounting: THT Gate charge: 236nC Kind of channel: enhancement Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW065SIC049 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 135A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 128nC Kind of channel: enhancement Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW065SIC080 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 100A Power dissipation: 175W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 75mΩ Mounting: THT Gate charge: 75nC Kind of channel: enhancement Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW075M065 | DIOTEC SEMICONDUCTOR | DIW075M065-DIO THT IGBT transistors |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW085N06 | DIOTEC SEMICONDUCTOR |
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auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC022-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 340W Polarisation: unipolar Kind of package: tube Gate charge: 269nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC023-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 100A Pulsed drain current: 260A Power dissipation: 600W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 29mΩ Mounting: THT Gate charge: 45nC Kind of package: tube Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC028 | DIOTEC SEMICONDUCTOR | DIW120SIC028-DIO THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DIW120SIC059-AQ | DIOTEC SEMICONDUCTOR |
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auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW170SIC049 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 47A Pulsed drain current: 150A Power dissipation: 357W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 81mΩ Mounting: THT Gate charge: 179nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW170SIC070 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 45A Pulsed drain current: 140A Power dissipation: 416W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 28mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW170SIC750 | DIOTEC SEMICONDUCTOR | DIW170SIC750-DIO THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
EAL1A | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
EAL1B | DIOTEC SEMICONDUCTOR |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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EAL1D | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.25V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA Max. load current: 8A Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1470 Stücke: Lieferzeit 7-14 Tag (e) |
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EAL1G | DIOTEC SEMICONDUCTOR |
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auf Bestellung 1920 Stücke: Lieferzeit 7-14 Tag (e) |
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DI79L15ZAB |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: -17.5...-30V
Kind of package: bulk
Manufacturer series: DI79LxxZAB
Tolerance: ±5%
Voltage drop: 1.7V
Anzahl je Verpackung: 1 Stücke
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: -17.5...-30V
Kind of package: bulk
Manufacturer series: DI79LxxZAB
Tolerance: ±5%
Voltage drop: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1402 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
252+ | 0.28 EUR |
325+ | 0.22 EUR |
477+ | 0.15 EUR |
999+ | 0.072 EUR |
1058+ | 0.068 EUR |
50000+ | 0.065 EUR |
DI79L18DAB |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; SO8; SMD; 0÷125°C
Mounting: SMD
Operating temperature: 0...125°C
Case: SO8
Tolerance: ±5%
Output voltage: -18V
Output current: 0.1A
Voltage drop: 1.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: -20.5...-33V
Kind of package: reel; tape
Manufacturer series: DI79LxxDAB
Kind of voltage regulator: fixed; linear
Anzahl je Verpackung: 5 Stücke
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; SO8; SMD; 0÷125°C
Mounting: SMD
Operating temperature: 0...125°C
Case: SO8
Tolerance: ±5%
Output voltage: -18V
Output current: 0.1A
Voltage drop: 1.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: -20.5...-33V
Kind of package: reel; tape
Manufacturer series: DI79LxxDAB
Kind of voltage regulator: fixed; linear
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3664 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
475+ | 0.15 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
705+ | 0.1 EUR |
740+ | 0.097 EUR |
DI79L18UAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L18UAB-DIO Unregulated voltage regulators
DI79L18UAB-DIO Unregulated voltage regulators
auf Bestellung 975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
376+ | 0.19 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
DI79L18ZAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L18ZAB-DIO Unregulated voltage regulators
DI79L18ZAB-DIO Unregulated voltage regulators
auf Bestellung 1680 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
372+ | 0.19 EUR |
898+ | 0.08 EUR |
949+ | 0.075 EUR |
8000+ | 0.073 EUR |
DI79L24DAB |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; SO8; SMD; 0÷125°C
Mounting: SMD
Operating temperature: 0...125°C
Case: SO8
Tolerance: ±5%
Output voltage: -24V
Output current: 0.1A
Voltage drop: 1.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: -27...-38V
Kind of package: reel; tape
Manufacturer series: DI79LxxDAB
Kind of voltage regulator: fixed; linear
Anzahl je Verpackung: 5 Stücke
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -24V; 0.1A; SO8; SMD; 0÷125°C
Mounting: SMD
Operating temperature: 0...125°C
Case: SO8
Tolerance: ±5%
Output voltage: -24V
Output current: 0.1A
Voltage drop: 1.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: -27...-38V
Kind of package: reel; tape
Manufacturer series: DI79LxxDAB
Kind of voltage regulator: fixed; linear
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3990 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
475+ | 0.15 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
705+ | 0.1 EUR |
740+ | 0.097 EUR |
DI79L24UAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L24UAB-DIO Unregulated voltage regulators
DI79L24UAB-DIO Unregulated voltage regulators
auf Bestellung 515 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
376+ | 0.19 EUR |
515+ | 0.14 EUR |
1000+ | 0.1 EUR |
DI79L24ZAB |
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Hersteller: DIOTEC SEMICONDUCTOR
DI79L24ZAB-DIO Unregulated voltage regulators
DI79L24ZAB-DIO Unregulated voltage regulators
auf Bestellung 1863 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
372+ | 0.19 EUR |
898+ | 0.08 EUR |
949+ | 0.075 EUR |
8000+ | 0.073 EUR |
DI79M05D1 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
Manufacturer series: DI79LxxD1
Anzahl je Verpackung: 1 Stücke
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
Manufacturer series: DI79LxxD1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI79M15D1 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: DI79LxxD1
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
Anzahl je Verpackung: 1 Stücke
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: DI79LxxD1
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4%
Number of channels: 1
Input voltage: -7.5...-25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI7A5N65D2K-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 62.5W
Version: ESD
Gate charge: 18.4nC
Gate-source voltage: ±30V
Pulsed drain current: 25A
Drain current: 4.7A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 62.5W
Version: ESD
Gate charge: 18.4nC
Gate-source voltage: ±30V
Pulsed drain current: 25A
Drain current: 4.7A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI7A5N65D2K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 62.5W
Version: ESD
Gate charge: 18.4nC
Gate-source voltage: ±30V
Pulsed drain current: 25A
Drain current: 4.7A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 62.5W
Version: ESD
Gate charge: 18.4nC
Gate-source voltage: ±30V
Pulsed drain current: 25A
Drain current: 4.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
43+ | 1.7 EUR |
48+ | 1.49 EUR |
1600+ | 1.22 EUR |
DI7A6N04SQ2 |
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Hersteller: DIOTEC SEMICONDUCTOR
DI7A6N04SQ2-DIO Multi channel transistors
DI7A6N04SQ2-DIO Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI7A6N10SQ |
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Hersteller: DIOTEC SEMICONDUCTOR
DI7A6N10SQ-DIO SMD N channel transistors
DI7A6N10SQ-DIO SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI8A6C03SQ |
Hersteller: DIOTEC SEMICONDUCTOR
DI8A6C03SQ-DIO Multi channel transistors
DI8A6C03SQ-DIO Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DID3A2N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIF065SIC020 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.87 EUR |
DIF065SIC030 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 74A
Pulsed drain current: 105A
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 74A; Idm: 105A; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 74A
Pulsed drain current: 105A
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.32 EUR |
30+ | 18.09 EUR |
120+ | 17.98 EUR |
DIF120SIC022-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 340W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 340W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIF120SIC022 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 340W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 340W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIF120SIC028 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 295A
Power dissipation: 715W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 373nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 295A
Power dissipation: 715W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 373nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 28.19 EUR |
DIF120SIC053-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.75 EUR |
DIF120SIC053 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.16 EUR |
6+ | 12.28 EUR |
7+ | 11.63 EUR |
120+ | 11.47 EUR |
DIJ2A3N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIJ2A3N65-DIO THT N channel transistors
DIJ2A3N65-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIJ4A5N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Gate-source voltage: ±30V
Pulsed drain current: 28A
Drain current: 2.7A
Power dissipation: 46W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Gate-source voltage: ±30V
Pulsed drain current: 28A
Drain current: 2.7A
Power dissipation: 46W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT015N25 |
Hersteller: DIOTEC SEMICONDUCTOR
DIT015N25-DIO THT N channel transistors
DIT015N25-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT050N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1282 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
98+ | 0.73 EUR |
107+ | 0.67 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
10000+ | 0.38 EUR |
DIT074P05 |
Hersteller: DIOTEC SEMICONDUCTOR
DIT074P05-DIO THT P channel transistors
DIT074P05-DIO THT P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT080N08-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT080N08-AQ-DIO THT N channel transistors
DIT080N08-AQ-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT080N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT080N08-DIO THT N channel transistors
DIT080N08-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT085N10 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT085N10-DIO THT N channel transistors
DIT085N10-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIT090N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT090N06-DIO THT N channel transistors
DIT090N06-DIO THT N channel transistors
auf Bestellung 1036 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
DIT095N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT095N08-DIO THT N channel transistors
DIT095N08-DIO THT N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
DIT100N10 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Heatsink thickness: max. 1.2mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 380A
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Heatsink thickness: max. 1.2mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 380A
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 997 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
DIT120N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT120N08-DIO THT N channel transistors
DIT120N08-DIO THT N channel transistors
auf Bestellung 856 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
DIT150N03 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 769 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
37+ | 1.94 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
DIT195N08 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIT195N08-DIO THT N channel transistors
DIT195N08-DIO THT N channel transistors
auf Bestellung 1073 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
DIW012N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIW018N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.84 EUR |
23+ | 3.19 EUR |
24+ | 3.02 EUR |
120+ | 3 EUR |
450+ | 2.9 EUR |
DIW030F135 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW030F135-DIO THT IGBT transistors
DIW030F135-DIO THT IGBT transistors
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.22 EUR |
16+ | 4.46 EUR |
450+ | 3.23 EUR |
DIW030M060 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW030M060-DIO THT IGBT transistors
DIW030M060-DIO THT IGBT transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.73 EUR |
30+ | 2.39 EUR |
450+ | 1.69 EUR |
DIW030N65K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 160A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 160A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIW040F135 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW040F135-DIO THT IGBT transistors
DIW040F135-DIO THT IGBT transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.77 EUR |
12+ | 6.03 EUR |
DIW040M120 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 330nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 69ns
Turn-off time: 337ns
Type of transistor: IGBT
Power dissipation: 330W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 330nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 69ns
Turn-off time: 337ns
Type of transistor: IGBT
Power dissipation: 330W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.71 EUR |
12+ | 6.03 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
450+ | 4.29 EUR |
DIW050F065 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 245ns
Turn-on time: 168ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 350W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 245ns
Turn-on time: 168ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 355 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.88 EUR |
35+ | 2.06 EUR |
37+ | 1.96 EUR |
450+ | 1.87 EUR |
DIW065SIC015 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -4...15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -4...15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 28.13 EUR |
10+ | 28.11 EUR |
DIW065SIC049 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 135A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 135A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.19 EUR |
7+ | 10.38 EUR |
DIW065SIC080 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 175W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 75nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 175W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 75nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.24 EUR |
12+ | 6.01 EUR |
30+ | 5.86 EUR |
DIW075M065 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW075M065-DIO THT IGBT transistors
DIW075M065-DIO THT IGBT transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.03 EUR |
18+ | 4.03 EUR |
19+ | 3.8 EUR |
450+ | 3.73 EUR |
DIW085N06 |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW085N06-DIO THT N channel transistors
DIW085N06-DIO THT N channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.9 EUR |
22+ | 3.28 EUR |
24+ | 3.1 EUR |
600+ | 3.03 EUR |
DIW120SIC022-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 63.28 EUR |
30+ | 61.55 EUR |
DIW120SIC023-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 100A
Pulsed drain current: 260A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 100A
Pulsed drain current: 260A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 85.69 EUR |
10+ | 85.57 EUR |
30+ | 82.58 EUR |
DIW120SIC028 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW120SIC028-DIO THT N channel transistors
DIW120SIC028-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DIW120SIC059-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
DIW120SIC059-AQ THT N channel transistors
DIW120SIC059-AQ THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 39.75 EUR |
3+ | 24.54 EUR |
DIW170SIC049 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 47A
Pulsed drain current: 150A
Power dissipation: 357W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 179nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 47A
Pulsed drain current: 150A
Power dissipation: 357W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 179nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.83 EUR |
5+ | 17.8 EUR |
DIW170SIC070 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 45A
Pulsed drain current: 140A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 45A
Pulsed drain current: 140A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.2 EUR |
6+ | 12.08 EUR |
DIW170SIC750 |
Hersteller: DIOTEC SEMICONDUCTOR
DIW170SIC750-DIO THT N channel transistors
DIW170SIC750-DIO THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EAL1A |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1A-DIO SMD universal diodes
EAL1A-DIO SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EAL1B |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1B-DIO SMD universal diodes
EAL1B-DIO SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EAL1D |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Max. load current: 8A
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Max. load current: 8A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 0.12 EUR |
950+ | 0.076 EUR |
1070+ | 0.067 EUR |
1240+ | 0.058 EUR |
1310+ | 0.055 EUR |
EAL1G |
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Hersteller: DIOTEC SEMICONDUCTOR
EAL1G-DIO SMD universal diodes
EAL1G-DIO SMD universal diodes
auf Bestellung 1920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
569+ | 0.13 EUR |
1205+ | 0.059 EUR |
1273+ | 0.056 EUR |