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P6KE480A P6KE480A Diotec Semiconductor p6ke68.pdf Description: TVS DIODE 408VWM 658VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 658V
Voltage - Breakdown (Min): 456V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 408V
Current - Peak Pulse (10/1000µs): 900mA
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
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DI200N04PQ DI200N04PQ Diotec Semiconductor di200n04pq.pdf Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
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DI200N04PQ DI200N04PQ Diotec Semiconductor di200n04pq.pdf Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DI200N04D2 DI200N04D2 Diotec Semiconductor di200n04d2.pdf Description: MOSFET D2PAK N 40V 200A
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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P6SMBJ64A P6SMBJ64A Diotec Semiconductor p6smbj65.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMBJ64A-AQ P6SMBJ64A-AQ Diotec Semiconductor p6smbj65.pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C30 BZX84C30 Diotec Semiconductor bzx84c2v4.pdf Description: DIODE ZENER 30V 300MW SOT23
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
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DI110N06D2 DI110N06D2 Diotec Semiconductor di110n06d2.pdf Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
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DI110N06D2 DI110N06D2 Diotec Semiconductor di110n06d2.pdf Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
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DI110N06D1 DI110N06D1 Diotec Semiconductor di110n06d1.pdf Description: MOSFET DPAK N 65V 0.0032OHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V
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DI110N06D1 DI110N06D1 Diotec Semiconductor di110n06d1.pdf Description: MOSFET DPAK N 65V 0.0032OHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V
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DI110N06D2-AQ DI110N06D2-AQ Diotec Semiconductor di110n06d2.pdf Description: DI110N06D2-AQ
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Qualification: AEC-Q101
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DI2579N DI2579N Diotec Semiconductor di2579n.pdf Description: TRANS NPN 400V 1A SOT-223
Packaging: Strip
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.25 W
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5KP75A 5KP75A Diotec Semiconductor 5kp65.pdf Description: TVS DIODE 75VWM 121VC P-600
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 41A
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Bulk
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MMFTP2301-AQ MMFTP2301-AQ Diotec Semiconductor mmftp2301.pdf Description: MOSFET P-CH 20V 2.8A TO-236-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMFTP2301-AQ MMFTP2301-AQ Diotec Semiconductor mmftp2301.pdf Description: MOSFET P-CH 20V 2.8A TO-236-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
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ES3D ES3D Diotec Semiconductor es3a.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES3D ES3D Diotec Semiconductor es3a.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SB2100 SB2100 Diotec Semiconductor sb220.pdf Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SB2100 SB2100 Diotec Semiconductor sb220.pdf Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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P4SMAJ120CA P4SMAJ120CA Diotec Semiconductor p4smaj65.pdf Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
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DI120N04PQ-AQ DI120N04PQ-AQ Diotec Semiconductor di120n04pq.pdf Description: DI120N04PQ-AQ
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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DI320N04TL DI320N04TL Diotec Semiconductor di320n04tl.pdf Description: DI320N04TL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6296 pF @ 25 V
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BZT52C12GW BZT52C12GW Diotec Semiconductor bzt52c2v4gw.pdf Description: ZENER, SOD-123, 12V, 0.35W, 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C12GW BZT52C12GW Diotec Semiconductor bzt52c2v4gw.pdf Description: ZENER, SOD-123, 12V, 0.35W, 5%
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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SB140 SB140 Diotec Semiconductor sb120.pdf Description: DIODE SCHOTTKY 40V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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500+0.14 EUR
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SMF33A SMF33A Diotec Semiconductor smf50a.pdf Description: TVS DIODE 33VWM 53.3VC SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.75A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123F (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF33A SMF33A Diotec Semiconductor smf50a.pdf Description: TVS DIODE 33VWM 53.3VC SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.75A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123F (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
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500+0.12 EUR
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BR100-04LLD BR100-04LLD Diotec Semiconductor br10003lld.pdf Description: DIAC/SIDAC 35-45V 2A DO-213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -50°C ~ 125°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 50 µA
Supplier Device Package: DO-213AA (MINIMELF)
Current - Peak Output: 2 A
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B40C1500A B40C1500A Diotec Semiconductor b40c2300.pdf Description: BRIDGE RECT 1P 80V 1.8A 4-SIP
Current - Reverse Leakage @ Vr: 5 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 1.8 A
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: 4-SIP
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Box
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5KP51CA 5KP51CA Diotec Semiconductor 5kp65.pdf Description: TVS DIODE 51VWM 82.4VC P600
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 61A
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
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SD103AW SD103AW Diotec Semiconductor sd103aw.pdf Description: DIODE SCHOTTKY 32V 350MA SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 32 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Produkt ist nicht verfügbar
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SGL2-100-3G SGL2-100-3G Diotec Semiconductor sgl2-40-3g.pdf Description: DIODE SCHOTTKY 100V 2A DO213AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-213AA (MINIMELF)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
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SGL2-100-3G SGL2-100-3G Diotec Semiconductor sgl2-40-3g.pdf Description: DIODE SCHOTTKY 100V 2A DO213AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-213AA (MINIMELF)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar
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P4SMAJ150A P4SMAJ150A Diotec Semiconductor p4smaj65.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 1.6A
Applications: General Purpose
Operating Temperature: -50°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 243V
Produkt ist nicht verfügbar
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BAV99W-AQ BAV99W-AQ Diotec Semiconductor bas16w.pdf Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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BAV99W-AQ BAV99W-AQ Diotec Semiconductor bas16w.pdf Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBP310G KBP310G Diotec Semiconductor kbp302g.pdf Description: BRIDGE RECT 1PHASE 1KV 1.8A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DI080N10PQ-AQ DI080N10PQ-AQ Diotec Semiconductor di080n10pq.pdf Description: MOSFET N-CH 100V 80A 8-POWERTDFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB240 SB240 Diotec Semiconductor sb220.pdf Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SB240 SB240 Diotec Semiconductor sb220.pdf Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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BZT52C24 BZT52C24 Diotec Semiconductor bzt52c2v4.pdf Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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BZT52C24 BZT52C24 Diotec Semiconductor bzt52c2v4.pdf Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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ZPY36 ZPY36 Diotec Semiconductor zpy1.pdf Description: DIODE ZENER 36V 1.3W DO204AC
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Power - Max: 1.3 W
Supplier Device Package: DO-204AC (DO-41)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ZPY36 ZPY36 Diotec Semiconductor zpy1.pdf Description: DIODE ZENER 36V 1.3W DO204AC
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Power - Max: 1.3 W
Supplier Device Package: DO-204AC (DO-41)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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GBI25J-LV GBI25J-LV Diotec Semiconductor gbi25j-lv.pdf Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Box
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBI25J-T GBI25J-T Diotec Semiconductor gbi25a.pdf Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBI25J-LX-T GBI25J-LX-T Diotec Semiconductor gbi25j-lv.pdf Description: GBI25J-LX-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBI25J-LX GBI25J-LX Diotec Semiconductor gbi25j-lv.pdf Description: GBI25J-LX
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBI25J-LV-T GBI25J-LV-T Diotec Semiconductor gbi25j-lv.pdf Description: GBI25J-LV-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BZT52C36-AQ BZT52C36-AQ Diotec Semiconductor bzt52c2v4.pdf Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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BZT52C36-AQ BZT52C36-AQ Diotec Semiconductor bzt52c2v4.pdf Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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MBR20150CT MBR20150CT Diotec Semiconductor mbr20100ct.pdf Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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7+3.25 EUR
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500+0.98 EUR
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US2M-AQ US2M-AQ Diotec Semiconductor us2a.pdf Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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3000+0.2 EUR
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US2M-AQ US2M-AQ Diotec Semiconductor us2a.pdf Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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56+0.38 EUR
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110+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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BCP53-16 BCP53-16 Diotec Semiconductor bcp53.pdf Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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BCP53-16 BCP53-16 Diotec Semiconductor bcp53.pdf Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
auf Bestellung 890 Stücke:
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500+0.29 EUR
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GBU4M GBU4M Diotec Semiconductor gbu4a.pdf Description: BRIDGE RECT 1PHASE 1KV 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 158 Stücke:
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SI-A1750 SI-A1750 Diotec Semiconductor si-a1125.pdf Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Box
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4.8 V
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SI-A1750 SI-A1750 Diotec Semiconductor si-a1125.pdf Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Bulk
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4800 V
Produkt ist nicht verfügbar
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P6KE480A p6ke68.pdf
P6KE480A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 408VWM 658VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 658V
Voltage - Breakdown (Min): 456V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 408V
Current - Peak Pulse (10/1000µs): 900mA
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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DI200N04PQ di200n04pq.pdf
DI200N04PQ
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
auf Bestellung 5000 Stücke:
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DI200N04PQ di200n04pq.pdf
DI200N04PQ
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
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10+3.87 EUR
100+2.69 EUR
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DI200N04D2 di200n04d2.pdf
DI200N04D2
Hersteller: Diotec Semiconductor
Description: MOSFET D2PAK N 40V 200A
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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P6SMBJ64A p6smbj65.pdf
P6SMBJ64A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMBJ64A-AQ p6smbj65.pdf
P6SMBJ64A-AQ
Hersteller: Diotec Semiconductor
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C30 bzx84c2v4.pdf
BZX84C30
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 30V 300MW SOT23
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+0.48 EUR
1500+0.24 EUR
3000+0.12 EUR
6000+0.083 EUR
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DI110N06D2 di110n06d2.pdf
DI110N06D2
Hersteller: Diotec Semiconductor
Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Produkt ist nicht verfügbar
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DI110N06D2 di110n06d2.pdf
DI110N06D2
Hersteller: Diotec Semiconductor
Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.07 EUR
10+3.27 EUR
100+2.25 EUR
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DI110N06D1 di110n06d1.pdf
DI110N06D1
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 65V 0.0032OHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V
Produkt ist nicht verfügbar
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DI110N06D1 di110n06d1.pdf
DI110N06D1
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 65V 0.0032OHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V
auf Bestellung 2490 Stücke:
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4+5.55 EUR
10+3.61 EUR
100+2.49 EUR
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DI110N06D2-AQ di110n06d2.pdf
DI110N06D2-AQ
Hersteller: Diotec Semiconductor
Description: DI110N06D2-AQ
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DI2579N di2579n.pdf
DI2579N
Hersteller: Diotec Semiconductor
Description: TRANS NPN 400V 1A SOT-223
Packaging: Strip
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.25 W
auf Bestellung 4971 Stücke:
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12+1.84 EUR
19+1.15 EUR
100+0.75 EUR
500+0.58 EUR
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5KP75A 5kp65.pdf
5KP75A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 75VWM 121VC P-600
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 41A
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MMFTP2301-AQ mmftp2301.pdf
MMFTP2301-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET P-CH 20V 2.8A TO-236-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMFTP2301-AQ mmftp2301.pdf
MMFTP2301-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET P-CH 20V 2.8A TO-236-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Produkt ist nicht verfügbar
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ES3D es3a.pdf
ES3D
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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ES3D es3a.pdf
ES3D
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1383 Stücke:
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11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
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SB2100 sb220.pdf
SB2100
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 2331 Stücke:
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SB2100 sb220.pdf
SB2100
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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AnzahlPrivatkunde
4000+0.15 EUR
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P4SMAJ120CA p4smaj65.pdf
P4SMAJ120CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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DI120N04PQ-AQ di120n04pq.pdf
DI120N04PQ-AQ
Hersteller: Diotec Semiconductor
Description: DI120N04PQ-AQ
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DI320N04TL di320n04tl.pdf
DI320N04TL
Hersteller: Diotec Semiconductor
Description: DI320N04TL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6296 pF @ 25 V
Produkt ist nicht verfügbar
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BZT52C12GW bzt52c2v4gw.pdf
BZT52C12GW
Hersteller: Diotec Semiconductor
Description: ZENER, SOD-123, 12V, 0.35W, 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52C12GW bzt52c2v4gw.pdf
BZT52C12GW
Hersteller: Diotec Semiconductor
Description: ZENER, SOD-123, 12V, 0.35W, 5%
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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SB140 sb120.pdf
SB140
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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40+0.52 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
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2000+0.11 EUR
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SMF33A smf50a.pdf
SMF33A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 33VWM 53.3VC SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.75A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123F (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.07 EUR
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SMF33A smf50a.pdf
SMF33A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 33VWM 53.3VC SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.75A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123F (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3924 Stücke:
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100+0.21 EUR
132+0.15 EUR
157+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
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BR100-04LLD br10003lld.pdf
BR100-04LLD
Hersteller: Diotec Semiconductor
Description: DIAC/SIDAC 35-45V 2A DO-213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -50°C ~ 125°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 50 µA
Supplier Device Package: DO-213AA (MINIMELF)
Current - Peak Output: 2 A
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2500+0.12 EUR
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B40C1500A b40c2300.pdf
B40C1500A
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1P 80V 1.8A 4-SIP
Current - Reverse Leakage @ Vr: 5 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 1.8 A
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: 4-SIP
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Box
auf Bestellung 500 Stücke:
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100+7.41 EUR
200+3.78 EUR
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5KP51CA 5kp65.pdf
5KP51CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 51VWM 82.4VC P600
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 61A
Applications: General Purpose
Operating Temperature: -50°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
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250+4.88 EUR
500+2.5 EUR
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SD103AW sd103aw.pdf
SD103AW
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 32V 350MA SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 32 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Produkt ist nicht verfügbar
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SGL2-100-3G sgl2-40-3g.pdf
SGL2-100-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 2A DO213AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-213AA (MINIMELF)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
auf Bestellung 70000 Stücke:
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500+1.04 EUR
1000+0.52 EUR
2500+0.23 EUR
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SGL2-100-3G sgl2-40-3g.pdf
SGL2-100-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 2A DO213AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-213AA (MINIMELF)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar
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P4SMAJ150A p4smaj65.pdf
P4SMAJ150A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 150VWM 243VC DO214AC
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 1.6A
Applications: General Purpose
Operating Temperature: -50°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 243V
Produkt ist nicht verfügbar
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BAV99W-AQ bas16w.pdf
BAV99W-AQ
Hersteller: Diotec Semiconductor
Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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112+0.19 EUR
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BAV99W-AQ bas16w.pdf
BAV99W-AQ
Hersteller: Diotec Semiconductor
Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBP310G kbp302g.pdf
KBP310G
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.8A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 515 Stücke:
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
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DI080N10PQ-AQ di080n10pq.pdf
DI080N10PQ-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 100V 80A 8-POWERTDFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB240 sb220.pdf
SB240
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 3508 Stücke:
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28+0.77 EUR
45+0.46 EUR
100+0.3 EUR
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SB240 sb220.pdf
SB240
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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BZT52C24 bzt52c2v4.pdf
BZT52C24
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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BZT52C24 bzt52c2v4.pdf
BZT52C24
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 24V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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67+0.31 EUR
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ZPY36 zpy1.pdf
ZPY36
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 36V 1.3W DO204AC
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Power - Max: 1.3 W
Supplier Device Package: DO-204AC (DO-41)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 4451 Stücke:
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34+0.63 EUR
64+0.33 EUR
100+0.21 EUR
500+0.18 EUR
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ZPY36 zpy1.pdf
ZPY36
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 36V 1.3W DO204AC
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Power - Max: 1.3 W
Supplier Device Package: DO-204AC (DO-41)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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GBI25J-LV gbi25j-lv.pdf
GBI25J-LV
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Box
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
10+3.26 EUR
100+2.24 EUR
500+1.84 EUR
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GBI25J-T gbi25a.pdf
GBI25J-T
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBI25J-LX-T gbi25j-lv.pdf
GBI25J-LX-T
Hersteller: Diotec Semiconductor
Description: GBI25J-LX-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBI25J-LX gbi25j-lv.pdf
GBI25J-LX
Hersteller: Diotec Semiconductor
Description: GBI25J-LX
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBI25J-LV-T gbi25j-lv.pdf
GBI25J-LV-T
Hersteller: Diotec Semiconductor
Description: GBI25J-LV-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BZT52C36-AQ bzt52c2v4.pdf
BZT52C36-AQ
Hersteller: Diotec Semiconductor
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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BZT52C36-AQ bzt52c2v4.pdf
BZT52C36-AQ
Hersteller: Diotec Semiconductor
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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MBR20150CT mbr20100ct.pdf
MBR20150CT
Hersteller: Diotec Semiconductor
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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AnzahlPrivatkunde
7+3.25 EUR
50+1.33 EUR
100+1.11 EUR
500+0.98 EUR
1000+0.92 EUR
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US2M-AQ us2a.pdf
US2M-AQ
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.2 EUR
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US2M-AQ us2a.pdf
US2M-AQ
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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56+0.38 EUR
82+0.25 EUR
94+0.23 EUR
110+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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BCP53-16 bcp53.pdf
BCP53-16
Hersteller: Diotec Semiconductor
Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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BCP53-16 bcp53.pdf
BCP53-16
Hersteller: Diotec Semiconductor
Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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GBU4M gbu4a.pdf
GBU4M
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 158 Stücke:
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SI-A1750 si-a1125.pdf
SI-A1750
Hersteller: Diotec Semiconductor
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Box
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4.8 V
auf Bestellung 54 Stücke:
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SI-A1750 si-a1125.pdf
SI-A1750
Hersteller: Diotec Semiconductor
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Bulk
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4800 V
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