Produkte > EIC SEMICONDUCTOR INC. > Alle Produkte des Herstellers EIC SEMICONDUCTOR INC. (431) > Seite 6 nach 8

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FR105T/R EIC SEMICONDUCTOR INC. FR101%20-%20FR107-STR_Rev.3.pdf Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 29990 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR106BULK EIC SEMICONDUCTOR INC. FR101 - FR107-STR_Rev.3.pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 37000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR106T/R EIC SEMICONDUCTOR INC. FR101 - FR107-STR_Rev.3.pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR155T/R EIC SEMICONDUCTOR INC. FR151G%20-%20FR157G-STR.pdf Description: DIODE GEN PURP 600V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR205T/R EIC SEMICONDUCTOR INC. FR201%20-%20FR207_Rev.03.pdf Description: DIODE GEN PURP 600V 2A DO15
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR207BULK EIC SEMICONDUCTOR INC. FR201 - FR207_Rev.03.pdf Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Bag
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.49 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FR301BULK FR301BULK EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR301T/R FR301T/R EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR302T/R FR302T/R EIC SEMICONDUCTOR INC. ]FR301 - FR307-STR.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.19 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR303BULK FR303BULK EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR303T/R FR303T/R EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.23 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR304BULK FR304BULK EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR304T/R FR304T/R EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.23 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR305BULK FR305BULK EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR305T/R FR305T/R EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 11250 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.25 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR306BULK FR306BULK EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR306T/R FR306T/R EIC SEMICONDUCTOR INC. ]FR301%20-%20FR307-STR.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.26 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR307BULK FR307BULK EIC SEMICONDUCTOR INC. ]FR301 - FR307-STR.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR307T/R FR307T/R EIC SEMICONDUCTOR INC. ]FR301 - FR307-STR.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.28 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER101BULK EIC SEMICONDUCTOR INC. HER101%20-%20HER108.pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER101T/R EIC SEMICONDUCTOR INC. HER101%20-%20HER108.pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER102BULK EIC SEMICONDUCTOR INC. HER101%20-%20HER108.pdf Description: DIODE GEN PURP 100V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER102T/R EIC SEMICONDUCTOR INC. HER101%20-%20HER108.pdf Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER103BULK EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER103T/R EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER104BULK EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 300V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER104T/R EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 300V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.11 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER105BULK EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER107BULK EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER108BULK EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER108T/R EIC SEMICONDUCTOR INC. HER101 - HER108.pdf Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.19 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER301BULK HER301BULK EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER301T/R HER301T/R EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.26 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER302BULK HER302BULK EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER302T/R HER302T/R EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.30 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER303BULK HER303BULK EIC SEMICONDUCTOR INC. HER301 -HER308.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER303T/R HER303T/R EIC SEMICONDUCTOR INC. HER301 -HER308.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.30 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER304BULK HER304BULK EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER305BULK HER305BULK EIC SEMICONDUCTOR INC. HER301 -HER308.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.46 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER305T/R HER305T/R EIC SEMICONDUCTOR INC. HER301 -HER308.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.35 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER306BULK HER306BULK EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.49 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER306T/R HER306T/R EIC SEMICONDUCTOR INC. HER301%20-HER308.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.35 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER503BULK HER503BULK EIC SEMICONDUCTOR INC. HER501%20-%20HER508.pdf Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.55 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER506T/R HER506T/R EIC SEMICONDUCTOR INC. HER501 - HER508.pdf Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.49 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
KBL400 EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
100+1.76 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL401 EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
100+1.80 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL402 EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
100+1.94 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL404 EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
100+1.99 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL406M EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
100+2.08 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL408 EIC SEMICONDUCTOR INC. KBL400 - KBL410 REV.6.pdf Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
100+2.08 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
MBRA210L EIC SEMICONDUCTOR INC. MBRA210L_rev.05.pdf Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bag
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.69 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MR754T/R EIC SEMICONDUCTOR INC. MR750%20-%20MR760.pdf Description: DIODE GEN PURP 400V 6A D6
Packaging: Tape & Reel (TR)
Package / Case: D-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: D6
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.51 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
MR850BULK MR850BULK EIC SEMICONDUCTOR INC. MR850%20-%20MR858.pdf Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MURA110 EIC SEMICONDUCTOR INC. MURA105_11_Rev.02.pdf Description: DIODE GEN PURP 100V 2A SMA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P4KE13CT/R EIC SEMICONDUCTOR INC. P4KE6.8C_SERIES.pdf Description: TVS DIODE 10.5VWM 19VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE200ABULK EIC SEMICONDUCTOR INC. P4KE_SERIES_Rev.05.pdf Description: TVS DIODE 171VWM 274VC DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.53A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
P4KE30CAT/R EIC SEMICONDUCTOR INC. P4KE6.8C_SERIES.pdf Description: TVS DIODE 25.6VWM 41.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE39T/R EIC SEMICONDUCTOR INC. P4KE_SERIES_Rev.05.pdf Description: TVS DIODE 31.6VWM 56.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE400ABULK EIC SEMICONDUCTOR INC. P4KE_SERIES_Rev.05.pdf Description: TVS DIODE 342VWM 548VC DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 730mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
500+0.62 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
P4KE400AT/R EIC SEMICONDUCTOR INC. P4KE_SERIES_Rev.05.pdf Description: TVS DIODE 342VWM 548VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 730mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR105T/R FR101%20-%20FR107-STR_Rev.3.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 29990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR106BULK FR101 - FR107-STR_Rev.3.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 37000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR106T/R FR101 - FR107-STR_Rev.3.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR155T/R FR151G%20-%20FR157G-STR.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FR205T/R FR201%20-%20FR207_Rev.03.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 2A DO15
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR207BULK FR201 - FR207_Rev.03.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Bag
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.49 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FR301BULK ]FR301%20-%20FR307-STR.pdf
FR301BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR301T/R ]FR301%20-%20FR307-STR.pdf
FR301T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FR302T/R ]FR301 - FR307-STR.pdf
FR302T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.19 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR303BULK ]FR301%20-%20FR307-STR.pdf
FR303BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR303T/R ]FR301%20-%20FR307-STR.pdf
FR303T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.23 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR304BULK ]FR301%20-%20FR307-STR.pdf
FR304BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR304T/R ]FR301%20-%20FR307-STR.pdf
FR304T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.23 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR305BULK ]FR301%20-%20FR307-STR.pdf
FR305BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR305T/R ]FR301%20-%20FR307-STR.pdf
FR305T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 11250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.25 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR306BULK ]FR301%20-%20FR307-STR.pdf
FR306BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR306T/R ]FR301%20-%20FR307-STR.pdf
FR306T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.26 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
FR307BULK ]FR301 - FR307-STR.pdf
FR307BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FR307T/R ]FR301 - FR307-STR.pdf
FR307T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.28 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER101BULK HER101%20-%20HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER101T/R HER101%20-%20HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER102BULK HER101%20-%20HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER102T/R HER101%20-%20HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER103BULK HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.37 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER103T/R HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER104BULK HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 300V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER104T/R HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 300V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.11 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER105BULK HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER107BULK HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER108BULK HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER108T/R HER101 - HER108.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.19 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HER301BULK HER301%20-HER308.pdf
HER301BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER301T/R HER301%20-HER308.pdf
HER301T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.26 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER302BULK HER301%20-HER308.pdf
HER302BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.42 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER302T/R HER301%20-HER308.pdf
HER302T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.30 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER303BULK HER301 -HER308.pdf
HER303BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER303T/R HER301 -HER308.pdf
HER303T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.30 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER304BULK HER301%20-HER308.pdf
HER304BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER305BULK HER301 -HER308.pdf
HER305BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.46 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER305T/R HER301 -HER308.pdf
HER305T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.35 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER306BULK HER301%20-HER308.pdf
HER306BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.49 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER306T/R HER301%20-HER308.pdf
HER306T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.35 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
HER503BULK HER501%20-%20HER508.pdf
HER503BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.55 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
HER506T/R HER501 - HER508.pdf
HER506T/R
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.49 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
KBL400 KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+1.76 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL401 KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+1.80 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL402 KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+1.94 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL404 KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+1.99 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL406M KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+2.08 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
KBL408 KBL400 - KBL410 REV.6.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: STD 4A, CASE TYPE: KBL
Packaging: Bag
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+2.08 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
MBRA210L MBRA210L_rev.05.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bag
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.69 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MR754T/R MR750%20-%20MR760.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 400V 6A D6
Packaging: Tape & Reel (TR)
Package / Case: D-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: D6
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.51 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
MR850BULK MR850%20-%20MR858.pdf
MR850BULK
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 50V 3A DO201AD
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MURA110 MURA105_11_Rev.02.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 2A SMA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P4KE13CT/R P4KE6.8C_SERIES.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 10.5VWM 19VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.09 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE200ABULK P4KE_SERIES_Rev.05.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 171VWM 274VC DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.53A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
P4KE30CAT/R P4KE6.8C_SERIES.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 25.6VWM 41.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE39T/R P4KE_SERIES_Rev.05.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 31.6VWM 56.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
P4KE400ABULK P4KE_SERIES_Rev.05.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 342VWM 548VC DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 730mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.62 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
P4KE400AT/R P4KE_SERIES_Rev.05.pdf
Hersteller: EIC SEMICONDUCTOR INC.
Description: TVS DIODE 342VWM 548VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 730mA
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8  [ Nächste Seite >> ]