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GSFN3904 GSFN3904 Good-Ark Semiconductor GSFN3904.pdf Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 24A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.85 EUR
25+ 0.79 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
GSFN3906 GSFN3906 Good-Ark Semiconductor GSFN3906.pdf Description: MOSFET, N-CH, SINGLE, 60A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
Mindestbestellmenge: 3000
GSFN3906 GSFN3906 Good-Ark Semiconductor GSFN3906.pdf Description: MOSFET, N-CH, SINGLE, 60A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+ 0.67 EUR
29+ 0.62 EUR
100+ 0.5 EUR
250+ 0.46 EUR
500+ 0.39 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
GSFN3908 GSFN3908 Good-Ark Semiconductor GSFN3908.pdf Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
Mindestbestellmenge: 3000
GSFN3908 GSFN3908 Good-Ark Semiconductor GSFN3908.pdf Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
31+ 0.57 EUR
100+ 0.46 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
GSFP03101 GSFP03101 Good-Ark Semiconductor GSFP03101.pdf Description: MOSFET, P-CH, SINGLE, -100A, -30
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
GSFP03101 GSFP03101 Good-Ark Semiconductor GSFP03101.pdf Description: MOSFET, P-CH, SINGLE, -100A, -30
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
10+ 1.96 EUR
25+ 1.86 EUR
100+ 1.53 EUR
250+ 1.43 EUR
500+ 1.26 EUR
1000+ 1 EUR
Mindestbestellmenge: 8
GSFP0356 GSFP0356 Good-Ark Semiconductor GSFP0356.pdf Description: MOSFET, N-CH, SINGLE, 55A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.2x5.55)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 8895 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
29+ 0.61 EUR
31+ 0.57 EUR
100+ 0.45 EUR
250+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
GSFP0356 GSFP0356 Good-Ark Semiconductor GSFP0356.pdf Description: MOSFET, N-CH, SINGLE, 55A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.2x5.55)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
6000+ 0.24 EUR
Mindestbestellmenge: 3000
GSFP03602 GSFP03602 Good-Ark Semiconductor GSFP03602.pdf Description: MOSFET, N-CH, DUAL, 60A, 30V, PP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5x5.8)
Part Status: Active
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
GSFP03602 GSFP03602 Good-Ark Semiconductor GSFP03602.pdf Description: MOSFET, N-CH, DUAL, 60A, 30V, PP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5x5.8)
Part Status: Active
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
16+ 1.14 EUR
25+ 1.07 EUR
100+ 0.87 EUR
250+ 0.81 EUR
500+ 0.69 EUR
1000+ 0.55 EUR
2500+ 0.5 EUR
Mindestbestellmenge: 14
GSFP0365 GSFP0365 Good-Ark Semiconductor GSFP0365.pdf Description: MOSFET, P-CH, SINGLE, -30A, -64V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.89x5.74)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Produkt ist nicht verfügbar
GSFP0365 GSFP0365 Good-Ark Semiconductor GSFP0365.pdf Description: MOSFET, P-CH, SINGLE, -30A, -64V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.89x5.74)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.83 EUR
25+ 0.78 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 19
GSFP0380 GSFP0380 Good-Ark Semiconductor GSFP0380.pdf Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.37 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3000
GSFP0380 GSFP0380 Good-Ark Semiconductor GSFP0380.pdf Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.88 EUR
25+ 0.83 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
GSFP06120 GSFP06120 Good-Ark Semiconductor GSFP06120.pdf Description: MOSFET, N-CH, SINGLE, 120A, 65V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
12+ 1.54 EUR
25+ 1.46 EUR
100+ 1.2 EUR
250+ 1.12 EUR
500+ 0.99 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 11
GSFP06120 GSFP06120 Good-Ark Semiconductor GSFP06120.pdf Description: MOSFET, N-CH, SINGLE, 120A, 65V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
GSFP08150 GSFP08150 Good-Ark Semiconductor GSFP08150.pdf Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.42 EUR
Mindestbestellmenge: 3000
GSFP08150 GSFP08150 Good-Ark Semiconductor GSFP08150.pdf Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+ 2.79 EUR
25+ 2.63 EUR
100+ 2.24 EUR
250+ 2.1 EUR
500+ 1.84 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 6
GSFP10140 GSFP10140 Good-Ark Semiconductor GSFP10140.pdf Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.3 EUR
6000+ 1.25 EUR
Mindestbestellmenge: 3000
GSFP10140 GSFP10140 Good-Ark Semiconductor GSFP10140.pdf Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
Produkt ist nicht verfügbar
GSFP1040 GSFP1040 Good-Ark Semiconductor GSFP1040.pdf Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3000
GSFP1040 GSFP1040 Good-Ark Semiconductor GSFP1040.pdf Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.95 EUR
25+ 0.89 EUR
100+ 0.73 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
GSFP1080 GSFP1080 Good-Ark Semiconductor GSFP1080.pdf Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
GSFP1080 GSFP1080 Good-Ark Semiconductor GSFP1080.pdf Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 4315 Stücke:
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1000+ 0.78 EUR
2500+ 0.73 EUR
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GSFP1526 GSFP1526 Good-Ark Semiconductor GSFP1526.pdf Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
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100+ 1.02 EUR
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1000+ 0.64 EUR
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GSFP1526 GSFP1526 Good-Ark Semiconductor GSFP1526.pdf Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000
GSFP34010 GSFP34010 Good-Ark Semiconductor GSFP34010.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
Produkt ist nicht verfügbar
GSFP34010 GSFP34010 Good-Ark Semiconductor GSFP34010.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
Produkt ist nicht verfügbar
GSFP3944 GSFP3944 Good-Ark Semiconductor GSFP3944.pdf Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
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26+ 0.69 EUR
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GSFP3944 GSFP3944 Good-Ark Semiconductor GSFP3944.pdf Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
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GSFP6886 GSFP6886 Good-Ark Semiconductor GSFP6886.pdf Description: MOSFET, N-CH, DUAL, 45A, 65V, PP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 3000 Stücke:
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12+1.5 EUR
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GSFP6886 GSFP6886 Good-Ark Semiconductor GSFP6886.pdf Description: MOSFET, N-CH, DUAL, 45A, 65V, PP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000
GSFQ1008 GSFQ1008 Good-Ark Semiconductor GSFQ1008.pdf Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
GSFQ1008 GSFQ1008 Good-Ark Semiconductor GSFQ1008.pdf Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 5718 Stücke:
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20+0.92 EUR
22+ 0.8 EUR
25+ 0.76 EUR
100+ 0.62 EUR
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GSFQ1504 GSFQ1504 Good-Ark Semiconductor GSFQ1504.pdf Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.63 EUR
Mindestbestellmenge: 3000
GSFQ1504 GSFQ1504 Good-Ark Semiconductor GSFQ1504.pdf Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
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GSFQ2305 GSFQ2305 Good-Ark Semiconductor GSFQ2305.pdf Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
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3000+0.31 EUR
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GSFQ2305 GSFQ2305 Good-Ark Semiconductor GSFQ2305.pdf Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
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GSFQ4701 GSFQ4701 Good-Ark Semiconductor GSFQ4701.pdf Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
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3000+0.32 EUR
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GSFQ4701 GSFQ4701 Good-Ark Semiconductor GSFQ4701.pdf Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
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20+0.88 EUR
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25+ 0.7 EUR
100+ 0.56 EUR
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GSFQ4953 GSFQ4953 Good-Ark Semiconductor GSFQ4953.pdf Description: MOSFET, P-CH, DUAL, -5.40A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
GSFQ4953 GSFQ4953 Good-Ark Semiconductor GSFQ4953.pdf Description: MOSFET, P-CH, DUAL, -5.40A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
GSFQ6806 GSFQ6806 Good-Ark Semiconductor GSFQ6806.pdf Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.41 EUR
Mindestbestellmenge: 3000
GSFQ6806 GSFQ6806 Good-Ark Semiconductor GSFQ6806.pdf Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2891 Stücke:
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GSFQ6808 GSFQ6808 Good-Ark Semiconductor GSFQ6808.pdf Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
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GSFQ6808 GSFQ6808 Good-Ark Semiconductor GSFQ6808.pdf Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2984 Stücke:
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GSFR0308 GSFR0308 Good-Ark Semiconductor GSFR0308.pdf Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 5980 Stücke:
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GSFR0308 GSFR0308 Good-Ark Semiconductor GSFR0308.pdf Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 3000 Stücke:
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GSFR0603 GSFR0603 Good-Ark Semiconductor GSFR0603.pdf Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
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GSFR0603 GSFR0603 Good-Ark Semiconductor GSFR0603.pdf Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
auf Bestellung 6000 Stücke:
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GSFT06150 GSFT06150 Good-Ark Semiconductor GSFT06150.pdf Description: MOSFET, N-CH, SINGLE, 150.00A, 6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V
auf Bestellung 1600 Stücke:
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GSFT06150 GSFT06150 Good-Ark Semiconductor GSFT06150.pdf Description: MOSFET, N-CH, SINGLE, 150.00A, 6
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V
auf Bestellung 1600 Stücke:
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GSFT1060 GSFT1060 Good-Ark Semiconductor GSFT1060.pdf Description: MOSFET, N-CH, SINGLE, 60A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V
auf Bestellung 1600 Stücke:
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800+1.19 EUR
1600+ 0.94 EUR
Mindestbestellmenge: 800
GSFT1060 GSFT1060 Good-Ark Semiconductor GSFT1060.pdf Description: MOSFET, N-CH, SINGLE, 60A, 100V,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V
auf Bestellung 1600 Stücke:
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GSFT60R099 GSFT60R099 Good-Ark Semiconductor GSFT60R099.pdf Description: MOSFET, N-CH, SINGLE, 36.00A, 60
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tj)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 261W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3231 pF @ 50 V
auf Bestellung 920 Stücke:
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GSFU80R280 GSFU80R280 Good-Ark Semiconductor GSFU80R280.pdf Description: MOSFET, N-CH, SINGLE, 17.00A, 80
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 100 V
Produkt ist nicht verfügbar
GSFU95R500 GSFU95R500 Good-Ark Semiconductor GSFU95R500.pdf Description: MOSFET, N-CH, SINGLE, 10A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 34W (Tj)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V
auf Bestellung 1000 Stücke:
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GSFW02009 GSFW02009 Good-Ark Semiconductor GSFW02009.pdf Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 10000 Stücke:
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GSFW02009 GSFW02009 Good-Ark Semiconductor GSFW02009.pdf Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 18975 Stücke:
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60+ 0.3 EUR
71+ 0.25 EUR
112+ 0.16 EUR
250+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.071 EUR
2500+ 0.064 EUR
5000+ 0.055 EUR
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GSFN3904 GSFN3904.pdf
GSFN3904
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 24A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 25 V
auf Bestellung 6000 Stücke:
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Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.85 EUR
25+ 0.79 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
GSFN3906 GSFN3906.pdf
GSFN3906
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
Mindestbestellmenge: 3000
GSFN3906 GSFN3906.pdf
GSFN3906
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.67 EUR
29+ 0.62 EUR
100+ 0.5 EUR
250+ 0.46 EUR
500+ 0.39 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
GSFN3908 GSFN3908.pdf
GSFN3908
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
Mindestbestellmenge: 3000
GSFN3908 GSFN3908.pdf
GSFN3908
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
31+ 0.57 EUR
100+ 0.46 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
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GSFP03101 GSFP03101.pdf
GSFP03101
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -100A, -30
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
GSFP03101 GSFP03101.pdf
GSFP03101
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -100A, -30
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.2 EUR
10+ 1.96 EUR
25+ 1.86 EUR
100+ 1.53 EUR
250+ 1.43 EUR
500+ 1.26 EUR
1000+ 1 EUR
Mindestbestellmenge: 8
GSFP0356 GSFP0356.pdf
GSFP0356
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 55A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.2x5.55)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 8895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
29+ 0.61 EUR
31+ 0.57 EUR
100+ 0.45 EUR
250+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
GSFP0356 GSFP0356.pdf
GSFP0356
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 55A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.2x5.55)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
6000+ 0.24 EUR
Mindestbestellmenge: 3000
GSFP03602 GSFP03602.pdf
GSFP03602
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 60A, 30V, PP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5x5.8)
Part Status: Active
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
GSFP03602 GSFP03602.pdf
GSFP03602
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 60A, 30V, PP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5x5.8)
Part Status: Active
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
16+ 1.14 EUR
25+ 1.07 EUR
100+ 0.87 EUR
250+ 0.81 EUR
500+ 0.69 EUR
1000+ 0.55 EUR
2500+ 0.5 EUR
Mindestbestellmenge: 14
GSFP0365 GSFP0365.pdf
GSFP0365
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -64V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.89x5.74)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Produkt ist nicht verfügbar
GSFP0365 GSFP0365.pdf
GSFP0365
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -64V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.89x5.74)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.83 EUR
25+ 0.78 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 19
GSFP0380 GSFP0380.pdf
GSFP0380
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3000
GSFP0380 GSFP0380.pdf
GSFP0380
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.88 EUR
25+ 0.83 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
GSFP06120 GSFP06120.pdf
GSFP06120
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 120A, 65V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
12+ 1.54 EUR
25+ 1.46 EUR
100+ 1.2 EUR
250+ 1.12 EUR
500+ 0.99 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 11
GSFP06120 GSFP06120.pdf
GSFP06120
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 120A, 65V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
GSFP08150 GSFP08150.pdf
GSFP08150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.42 EUR
Mindestbestellmenge: 3000
GSFP08150 GSFP08150.pdf
GSFP08150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.1 EUR
10+ 2.79 EUR
25+ 2.63 EUR
100+ 2.24 EUR
250+ 2.1 EUR
500+ 1.84 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 6
GSFP10140 GSFP10140.pdf
GSFP10140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.3 EUR
6000+ 1.25 EUR
Mindestbestellmenge: 3000
GSFP10140 GSFP10140.pdf
GSFP10140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
Produkt ist nicht verfügbar
GSFP1040 GSFP1040.pdf
GSFP1040
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3000
GSFP1040 GSFP1040.pdf
GSFP1040
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.95 EUR
25+ 0.89 EUR
100+ 0.73 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
GSFP1080 GSFP1080.pdf
GSFP1080
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
GSFP1080 GSFP1080.pdf
GSFP1080
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 4315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
12+ 1.53 EUR
25+ 1.46 EUR
100+ 1.2 EUR
250+ 1.12 EUR
500+ 0.99 EUR
1000+ 0.78 EUR
2500+ 0.73 EUR
Mindestbestellmenge: 11
GSFP1526 GSFP1526.pdf
GSFP1526
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
14+ 1.33 EUR
25+ 1.25 EUR
100+ 1.02 EUR
250+ 0.95 EUR
500+ 0.81 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
GSFP1526 GSFP1526.pdf
GSFP1526
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
Mindestbestellmenge: 3000
GSFP34010 GSFP34010.pdf
GSFP34010
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
Produkt ist nicht verfügbar
GSFP34010 GSFP34010.pdf
GSFP34010
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
Produkt ist nicht verfügbar
GSFP3944 GSFP3944.pdf
GSFP3944
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
26+ 0.69 EUR
28+ 0.63 EUR
100+ 0.47 EUR
250+ 0.42 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 21
GSFP3944 GSFP3944.pdf
GSFP3944
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 3000
GSFP6886 GSFP6886.pdf
GSFP6886
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 45A, 65V, PP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
14+ 1.32 EUR
25+ 1.24 EUR
100+ 1.01 EUR
250+ 0.94 EUR
500+ 0.8 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
GSFP6886 GSFP6886.pdf
GSFP6886
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 45A, 65V, PP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
Mindestbestellmenge: 3000
GSFQ1008 GSFQ1008.pdf
GSFQ1008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
GSFQ1008 GSFQ1008.pdf
GSFQ1008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 5718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
22+ 0.8 EUR
25+ 0.76 EUR
100+ 0.62 EUR
250+ 0.57 EUR
500+ 0.49 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 20
GSFQ1504 GSFQ1504.pdf
GSFQ1504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.63 EUR
Mindestbestellmenge: 3000
GSFQ1504 GSFQ1504.pdf
GSFQ1504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
13+ 1.44 EUR
25+ 1.35 EUR
100+ 1.1 EUR
250+ 1.02 EUR
500+ 0.87 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 11
GSFQ2305 GSFQ2305.pdf
GSFQ2305
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 3000
GSFQ2305 GSFQ2305.pdf
GSFQ2305
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
26+ 0.7 EUR
100+ 0.56 EUR
250+ 0.52 EUR
500+ 0.44 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
GSFQ4701 GSFQ4701.pdf
GSFQ4701
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
GSFQ4701 GSFQ4701.pdf
GSFQ4701
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.76 EUR
25+ 0.7 EUR
100+ 0.56 EUR
250+ 0.52 EUR
500+ 0.44 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
GSFQ4953 GSFQ4953.pdf
GSFQ4953
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, DUAL, -5.40A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
GSFQ4953 GSFQ4953.pdf
GSFQ4953
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, DUAL, -5.40A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
GSFQ6806 GSFQ6806.pdf
GSFQ6806
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
Mindestbestellmenge: 3000
GSFQ6806 GSFQ6806.pdf
GSFQ6806
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
19+ 0.93 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.66 EUR
500+ 0.57 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
GSFQ6808 GSFQ6808.pdf
GSFQ6808
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
Mindestbestellmenge: 3000
GSFQ6808 GSFQ6808.pdf
GSFQ6808
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.82 EUR
25+ 0.77 EUR
100+ 0.63 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 19
GSFR0308 GSFR0308.pdf
GSFR0308
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
36+ 0.49 EUR
41+ 0.43 EUR
100+ 0.28 EUR
250+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 28
GSFR0308 GSFR0308.pdf
GSFR0308
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
Mindestbestellmenge: 3000
GSFR0603 GSFR0603.pdf
GSFR0603
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
Mindestbestellmenge: 3000
GSFR0603 GSFR0603.pdf
GSFR0603
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
27+ 0.65 EUR
30+ 0.59 EUR
100+ 0.41 EUR
250+ 0.34 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 21
GSFT06150 GSFT06150.pdf
GSFT06150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150.00A, 6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.05 EUR
1600+ 0.83 EUR
Mindestbestellmenge: 800
GSFT06150 GSFT06150.pdf
GSFT06150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150.00A, 6
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
11+ 1.64 EUR
25+ 1.55 EUR
100+ 1.28 EUR
250+ 1.19 EUR
Mindestbestellmenge: 10
GSFT1060 GSFT1060.pdf
GSFT1060
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.19 EUR
1600+ 0.94 EUR
Mindestbestellmenge: 800
GSFT1060 GSFT1060.pdf
GSFT1060
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60A, 100V,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
10+ 1.84 EUR
25+ 1.75 EUR
100+ 1.43 EUR
250+ 1.34 EUR
Mindestbestellmenge: 9
GSFT60R099 GSFT60R099.pdf
GSFT60R099
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 36.00A, 60
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tj)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 261W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3231 pF @ 50 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.18 EUR
10+ 6.03 EUR
100+ 4.88 EUR
500+ 4.33 EUR
Mindestbestellmenge: 3
GSFU80R280 GSFU80R280.pdf
GSFU80R280
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 17.00A, 80
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 100 V
Produkt ist nicht verfügbar
GSFU95R500 GSFU95R500.pdf
GSFU95R500
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 10A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 34W (Tj)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.67 EUR
10+ 5.6 EUR
100+ 4.53 EUR
500+ 4.03 EUR
1000+ 3.45 EUR
Mindestbestellmenge: 3
GSFW02009 GSFW02009.pdf
GSFW02009
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.047 EUR
Mindestbestellmenge: 10000
GSFW02009 GSFW02009.pdf
GSFW02009
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 18975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
60+ 0.3 EUR
71+ 0.25 EUR
112+ 0.16 EUR
250+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.071 EUR
2500+ 0.064 EUR
5000+ 0.055 EUR
Mindestbestellmenge: 48
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