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GSFP0641 GSFP0641 Good-Ark Semiconductor GSFP0641.pdf Description: MOSFET, P-CH, SINGLE, -40.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3893 pF @ 30 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
GSFP08130 GSFP08130 Good-Ark Semiconductor GSFP08130.pdf Description: MOSFET, N-CH, SINGLE, 130A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.94 EUR
Mindestbestellmenge: 3000
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GSFP08130 GSFP08130 Good-Ark Semiconductor GSFP08130.pdf Description: MOSFET, N-CH, SINGLE, 130A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V
Produkt ist nicht verfügbar
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GSFP08150 GSFP08150 Good-Ark Semiconductor GSFP08150.pdf Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Produkt ist nicht verfügbar
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GSFP08150 GSFP08150 Good-Ark Semiconductor GSFP08150.pdf Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 2641 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+2.86 EUR
25+2.45 EUR
100+1.99 EUR
250+1.76 EUR
500+1.62 EUR
1000+1.51 EUR
Mindestbestellmenge: 4
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GSFP0876 GSFP0876 Good-Ark Semiconductor GSFP0876.pdf Description: MOSFET, N-CH, SINGLE 80V 75A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
14+1.3 EUR
25+1.22 EUR
100+1 EUR
250+0.93 EUR
500+0.79 EUR
1000+0.63 EUR
Mindestbestellmenge: 12
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GSFP0876 GSFP0876 Good-Ark Semiconductor GSFP0876.pdf Description: MOSFET, N-CH, SINGLE 80V 75A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V
Produkt ist nicht verfügbar
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GSFP10140 GSFP10140 Good-Ark Semiconductor GSFP10140.pdf Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.12 EUR
Mindestbestellmenge: 3000
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GSFP10140 GSFP10140 Good-Ark Semiconductor GSFP10140.pdf Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 2520 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+2.62 EUR
25+2.24 EUR
100+1.82 EUR
250+1.61 EUR
500+1.48 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
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GSFP1036 GSFP1036 Good-Ark Semiconductor GSFP1036.pdf Description: MOSFET, N-CH, SINGLE, 35A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
Mindestbestellmenge: 3000
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GSFP1036 GSFP1036 Good-Ark Semiconductor GSFP1036.pdf Description: MOSFET, N-CH, SINGLE, 35A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+0.87 EUR
25+0.81 EUR
100+0.66 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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GSFP1040 GSFP1040 Good-Ark Semiconductor GSFP1040.pdf Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
GSFP1040 GSFP1040 Good-Ark Semiconductor GSFP1040.pdf Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
25+0.88 EUR
100+0.69 EUR
250+0.59 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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GSFP1080 GSFP1080 Good-Ark Semiconductor GSFP1080.pdf Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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GSFP1080 GSFP1080 Good-Ark Semiconductor GSFP1080.pdf Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
12+1.56 EUR
25+1.48 EUR
100+1.22 EUR
250+1.14 EUR
500+1.01 EUR
1000+0.8 EUR
2500+0.74 EUR
Mindestbestellmenge: 10
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GSFP13010 GSFP13010 Good-Ark Semiconductor GSFP13010.pdf Description: MOSFET, N-CH, SINGLE, 50.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.38 EUR
10000+0.35 EUR
Mindestbestellmenge: 5000
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GSFP13010 GSFP13010 Good-Ark Semiconductor GSFP13010.pdf Description: MOSFET, N-CH, SINGLE, 50.00A, 10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V
Produkt ist nicht verfügbar
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GSFP1526 GSFP1526 Good-Ark Semiconductor GSFP1526.pdf Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
Produkt ist nicht verfügbar
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GSFP1526 GSFP1526 Good-Ark Semiconductor GSFP1526.pdf Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+1.19 EUR
25+1.12 EUR
100+0.91 EUR
250+0.85 EUR
500+0.72 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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GSFP2601 GSFP2601 Good-Ark Semiconductor GSFP2601.pdf Description: MOSFET, P-CH, SINGLE, -90.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 41.67W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
11+1.72 EUR
100+1.21 EUR
500+0.98 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GSFP2601 GSFP2601 Good-Ark Semiconductor GSFP2601.pdf Description: MOSFET, P-CH, SINGLE, -90.00A, -
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 41.67W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
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GSFP34010 GSFP34010 Good-Ark Semiconductor GSFP34010.pdf Description: MOSFET 2N-CH 100V 20A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
auf Bestellung 5000 Stücke:
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GSFP34010 GSFP34010 Good-Ark Semiconductor GSFP34010.pdf Description: MOSFET 2N-CH 100V 20A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
auf Bestellung 4560 Stücke:
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GSFP3944 GSFP3944 Good-Ark Semiconductor GSFP3944.pdf Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
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GSFP3944 GSFP3944 Good-Ark Semiconductor GSFP3944.pdf Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
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GSFP3984 GSFP3984 Good-Ark Semiconductor GSFP3984.pdf Description: MOSFET, N-CH, SINGLE, 150A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
Produkt ist nicht verfügbar
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GSFP3984 GSFP3984 Good-Ark Semiconductor GSFP3984.pdf Description: MOSFET, N-CH, SINGLE, 150A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
auf Bestellung 2993 Stücke:
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GSFP4R310 GSFP4R310 Good-Ark Semiconductor GSFP4R310.pdf Description: MOSFET, N-CH, SINGLE, 136.00A, 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V
auf Bestellung 4934 Stücke:
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GSFP4R310 GSFP4R310 Good-Ark Semiconductor GSFP4R310.pdf Description: MOSFET, N-CH, SINGLE, 136.00A, 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V
auf Bestellung 10000 Stücke:
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5000+1.16 EUR
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GSFP68015 GSFP68015 Good-Ark Semiconductor GSFP68015.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V
auf Bestellung 10000 Stücke:
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GSFP68015 GSFP68015 Good-Ark Semiconductor GSFP68015.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V
Produkt ist nicht verfügbar
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GSFP6886 GSFP6886 Good-Ark Semiconductor GSFP6886.pdf Description: MOSFET 2N-CH 65V 45A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Produkt ist nicht verfügbar
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GSFP6886 GSFP6886 Good-Ark Semiconductor GSFP6886.pdf Description: MOSFET 2N-CH 65V 45A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 2805 Stücke:
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25+1.12 EUR
100+0.91 EUR
250+0.85 EUR
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1000+0.58 EUR
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GSFP6901 GSFP6901 Good-Ark Semiconductor GSFP6901.pdf Description: MOSFET, P-CH, SINGLE, -72A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V
auf Bestellung 6000 Stücke:
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3000+0.87 EUR
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GSFP6901 GSFP6901 Good-Ark Semiconductor GSFP6901.pdf Description: MOSFET, P-CH, SINGLE, -72A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V
auf Bestellung 3685 Stücke:
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GSFPR8504 GSFPR8504 Good-Ark Semiconductor GSFPR8504.pdf Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
auf Bestellung 10000 Stücke:
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GSFPR8504 GSFPR8504 Good-Ark Semiconductor GSFPR8504.pdf Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
Produkt ist nicht verfügbar
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GSFQ1008 GSFQ1008 Good-Ark Semiconductor GSFQ1008.pdf Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
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3000+0.35 EUR
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GSFQ1008 GSFQ1008 Good-Ark Semiconductor GSFQ1008.pdf Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 5718 Stücke:
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20+0.92 EUR
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25+0.76 EUR
100+0.62 EUR
250+0.57 EUR
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GSFQ1504 GSFQ1504 Good-Ark Semiconductor GSFQ1504.pdf Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
13+1.44 EUR
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100+1.1 EUR
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500+0.87 EUR
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GSFQ1504 GSFQ1504 Good-Ark Semiconductor GSFQ1504.pdf Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.63 EUR
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GSFQ2305 GSFQ2305 Good-Ark Semiconductor GSFQ2305.pdf Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
24+0.75 EUR
26+0.7 EUR
100+0.56 EUR
250+0.52 EUR
500+0.44 EUR
1000+0.34 EUR
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GSFQ2305 GSFQ2305 Good-Ark Semiconductor GSFQ2305.pdf Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
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GSFQ2307 GSFQ2307 Good-Ark Semiconductor GSFQ2307.pdf Description: MOSFET, P-CH, SINGLE, -9.6A, -20
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
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GSFQ2307 GSFQ2307 Good-Ark Semiconductor GSFQ2307.pdf Description: MOSFET, P-CH, SINGLE, -9.6A, -20
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
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GSFQ3025 GSFQ3025 Good-Ark Semiconductor GSFQ3025.pdf Description: MOSFET, P-CH, SINGLE, -8.00A, -3
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V
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GSFQ3025 GSFQ3025 Good-Ark Semiconductor GSFQ3025.pdf Description: MOSFET, P-CH, SINGLE, -8.00A, -3
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V
Produkt ist nicht verfügbar
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GSFQ4616 GSFQ4616 Good-Ark Semiconductor GSFQ4616.pdf Description: MOSFET N/P-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ4616 GSFQ4616 Good-Ark Semiconductor GSFQ4616.pdf Description: MOSFET N/P-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ4701 GSFQ4701 Good-Ark Semiconductor GSFQ4701.pdf Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ4701 GSFQ4701 Good-Ark Semiconductor GSFQ4701.pdf Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ4953 GSFQ4953 Good-Ark Semiconductor GSFQ4953.pdf Description: MOSFET 2P-CH 30V 5.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ4953 GSFQ4953 Good-Ark Semiconductor GSFQ4953.pdf Description: MOSFET 2P-CH 30V 5.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ6806 GSFQ6806 Good-Ark Semiconductor GSFQ6806.pdf Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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GSFQ6806 GSFQ6806 Good-Ark Semiconductor GSFQ6806.pdf Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2624 Stücke:
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GSFQ6808 GSFQ6808 Good-Ark Semiconductor GSFQ6808.pdf Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFQ6808 GSFQ6808 Good-Ark Semiconductor GSFQ6808.pdf Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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GSFR0308 GSFR0308 Good-Ark Semiconductor GSFR0308.pdf Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
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GSFR0308 GSFR0308 Good-Ark Semiconductor GSFR0308.pdf Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
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GSFR0603 GSFR0603 Good-Ark Semiconductor GSFR0603.pdf Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
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GSFP0641 GSFP0641.pdf
GSFP0641
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -40.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3893 pF @ 30 V
auf Bestellung 2800 Stücke:
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15+1.23 EUR
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GSFP08130 GSFP08130.pdf
GSFP08130
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 130A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V
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GSFP08130 GSFP08130.pdf
GSFP08130
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 130A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V
Produkt ist nicht verfügbar
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GSFP08150 GSFP08150.pdf
GSFP08150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSFP08150 GSFP08150.pdf
GSFP08150
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 2641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.86 EUR
25+2.45 EUR
100+1.99 EUR
250+1.76 EUR
500+1.62 EUR
1000+1.51 EUR
Mindestbestellmenge: 4
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GSFP0876 GSFP0876.pdf
GSFP0876
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE 80V 75A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
14+1.3 EUR
25+1.22 EUR
100+1 EUR
250+0.93 EUR
500+0.79 EUR
1000+0.63 EUR
Mindestbestellmenge: 12
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GSFP0876 GSFP0876.pdf
GSFP0876
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE 80V 75A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V
Produkt ist nicht verfügbar
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GSFP10140 GSFP10140.pdf
GSFP10140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.12 EUR
Mindestbestellmenge: 3000
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GSFP10140 GSFP10140.pdf
GSFP10140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 75A, 80V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 2520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+2.62 EUR
25+2.24 EUR
100+1.82 EUR
250+1.61 EUR
500+1.48 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
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GSFP1036 GSFP1036.pdf
GSFP1036
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 35A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
Mindestbestellmenge: 3000
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GSFP1036 GSFP1036.pdf
GSFP1036
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 35A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.87 EUR
25+0.81 EUR
100+0.66 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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GSFP1040 GSFP1040.pdf
GSFP1040
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
Mindestbestellmenge: 3000
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GSFP1040 GSFP1040.pdf
GSFP1040
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 40A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
25+0.88 EUR
100+0.69 EUR
250+0.59 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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GSFP1080 GSFP1080.pdf
GSFP1080
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSFP1080 GSFP1080.pdf
GSFP1080
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 105W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
12+1.56 EUR
25+1.48 EUR
100+1.22 EUR
250+1.14 EUR
500+1.01 EUR
1000+0.8 EUR
2500+0.74 EUR
Mindestbestellmenge: 10
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GSFP13010 GSFP13010.pdf
GSFP13010
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 50.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.38 EUR
10000+0.35 EUR
Mindestbestellmenge: 5000
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GSFP13010 GSFP13010.pdf
GSFP13010
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 50.00A, 10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V
Produkt ist nicht verfügbar
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GSFP1526 GSFP1526.pdf
GSFP1526
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
Produkt ist nicht verfügbar
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GSFP1526 GSFP1526.pdf
GSFP1526
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
15+1.19 EUR
25+1.12 EUR
100+0.91 EUR
250+0.85 EUR
500+0.72 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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GSFP2601 GSFP2601.pdf
GSFP2601
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -90.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 41.67W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.72 EUR
100+1.21 EUR
500+0.98 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
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GSFP2601 GSFP2601.pdf
GSFP2601
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -90.00A, -
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 41.67W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
Mindestbestellmenge: 3000
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GSFP34010 GSFP34010.pdf
GSFP34010
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 100V 20A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
Mindestbestellmenge: 5000
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GSFP34010 GSFP34010.pdf
GSFP34010
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 100V 20A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-PPAK (5x6)
auf Bestellung 4560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
23+0.78 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
Mindestbestellmenge: 16
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GSFP3944 GSFP3944.pdf
GSFP3944
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.69 EUR
28+0.63 EUR
100+0.47 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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GSFP3944 GSFP3944.pdf
GSFP3944
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 45A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
Mindestbestellmenge: 3000
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GSFP3984 GSFP3984.pdf
GSFP3984
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
Produkt ist nicht verfügbar
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GSFP3984 GSFP3984.pdf
GSFP3984
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 150A, 30V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V
auf Bestellung 2993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
15+1.19 EUR
25+1.12 EUR
100+0.91 EUR
250+0.85 EUR
500+0.72 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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GSFP4R310 GSFP4R310.pdf
GSFP4R310
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 136.00A, 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V
auf Bestellung 4934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
500+1.49 EUR
1000+1.26 EUR
2000+1.2 EUR
Mindestbestellmenge: 7
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GSFP4R310 GSFP4R310.pdf
GSFP4R310
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 136.00A, 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.16 EUR
10000+1.12 EUR
Mindestbestellmenge: 5000
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GSFP68015 GSFP68015.pdf
GSFP68015
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.38 EUR
10000+0.35 EUR
Mindestbestellmenge: 5000
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GSFP68015 GSFP68015.pdf
GSFP68015
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V
Produkt ist nicht verfügbar
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GSFP6886 GSFP6886.pdf
GSFP6886
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 65V 45A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Produkt ist nicht verfügbar
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GSFP6886 GSFP6886.pdf
GSFP6886
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 65V 45A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 67W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
auf Bestellung 2805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
15+1.19 EUR
25+1.12 EUR
100+0.91 EUR
250+0.85 EUR
500+0.72 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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GSFP6901 GSFP6901.pdf
GSFP6901
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -72A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
6000+0.83 EUR
Mindestbestellmenge: 3000
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GSFP6901 GSFP6901.pdf
GSFP6901
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -72A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V
auf Bestellung 3685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
10+1.84 EUR
25+1.75 EUR
100+1.43 EUR
250+1.34 EUR
500+1.18 EUR
1000+0.94 EUR
Mindestbestellmenge: 9
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GSFPR8504 GSFPR8504.pdf
GSFPR8504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.17 EUR
10000+1.13 EUR
Mindestbestellmenge: 5000
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GSFPR8504 GSFPR8504.pdf
GSFPR8504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
Produkt ist nicht verfügbar
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GSFQ1008 GSFQ1008.pdf
GSFQ1008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
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GSFQ1008 GSFQ1008.pdf
GSFQ1008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 5718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
22+0.8 EUR
25+0.76 EUR
100+0.62 EUR
250+0.57 EUR
500+0.49 EUR
1000+0.39 EUR
Mindestbestellmenge: 20
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GSFQ1504 GSFQ1504.pdf
GSFQ1504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
13+1.44 EUR
25+1.35 EUR
100+1.1 EUR
250+1.02 EUR
500+0.87 EUR
1000+0.7 EUR
Mindestbestellmenge: 11
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GSFQ1504 GSFQ1504.pdf
GSFQ1504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
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GSFQ2305 GSFQ2305.pdf
GSFQ2305
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.75 EUR
26+0.7 EUR
100+0.56 EUR
250+0.52 EUR
500+0.44 EUR
1000+0.34 EUR
Mindestbestellmenge: 20
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GSFQ2305 GSFQ2305.pdf
GSFQ2305
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -11A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
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GSFQ2307 GSFQ2307.pdf
GSFQ2307
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -9.6A, -20
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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GSFQ2307 GSFQ2307.pdf
GSFQ2307
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -9.6A, -20
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
42+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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GSFQ3025 GSFQ3025.pdf
GSFQ3025
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8.00A, -3
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.3 EUR
6000+0.28 EUR
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GSFQ3025 GSFQ3025.pdf
GSFQ3025
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8.00A, -3
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V
Produkt ist nicht verfügbar
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GSFQ4616 GSFQ4616.pdf
GSFQ4616
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.21 EUR
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GSFQ4616 GSFQ4616.pdf
GSFQ4616
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
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GSFQ4701 GSFQ4701.pdf
GSFQ4701
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
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3000+0.32 EUR
6000+0.3 EUR
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GSFQ4701 GSFQ4701.pdf
GSFQ4701
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
25+0.7 EUR
100+0.56 EUR
250+0.52 EUR
500+0.44 EUR
1000+0.34 EUR
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GSFQ4953 GSFQ4953.pdf
GSFQ4953
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 30V 5.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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GSFQ4953 GSFQ4953.pdf
GSFQ4953
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 30V 5.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
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GSFQ6806 GSFQ6806.pdf
GSFQ6806
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
Mindestbestellmenge: 3000
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GSFQ6806 GSFQ6806.pdf
GSFQ6806
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.05 EUR
25+0.87 EUR
100+0.67 EUR
250+0.57 EUR
500+0.51 EUR
1000+0.46 EUR
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GSFQ6808 GSFQ6808.pdf
GSFQ6808
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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GSFQ6808 GSFQ6808.pdf
GSFQ6808
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 5A/10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.47W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.82 EUR
25+0.77 EUR
100+0.63 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.4 EUR
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GSFR0308 GSFR0308.pdf
GSFR0308
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.12 EUR
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GSFR0308 GSFR0308.pdf
GSFR0308
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
61+0.29 EUR
100+0.22 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
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GSFR0603 GSFR0603.pdf
GSFR0603
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.3A, -60
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000
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