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GSGP5R GSGP5R Good-Ark Semiconductor GSGPxR.pdf Description: RECTIFIER, FAST RECOVERY, GLASS
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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55+0.38 EUR
112+0.19 EUR
500+0.15 EUR
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GSGP9R115 GSGP9R115 Good-Ark Semiconductor GSGP9R115.pdf Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
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GSGP9R115 GSGP9R115 Good-Ark Semiconductor GSGP9R115.pdf Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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GSGPD540S GSGPD540S Good-Ark Semiconductor GSGPD5xxS.pdf Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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GSGPD540S GSGPD540S Good-Ark Semiconductor GSGPD5xxS.pdf Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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GSGT10240 GSGT10240 Good-Ark Semiconductor GSGT10240.pdf Description: MOSFET, N-CH, SINGLE, 240.00A, 1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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GSGT10240 GSGT10240 Good-Ark Semiconductor GSGT10240.pdf Description: MOSFET, N-CH, SINGLE, 240.00A, 1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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GSGT15140 GSGT15140 Good-Ark Semiconductor GSGT15140.pdf Description: MOSFET, N-CH, SINGLE, 140A, 150V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
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GSGT15140 GSGT15140 Good-Ark Semiconductor GSGT15140.pdf Description: MOSFET, N-CH, SINGLE, 140A, 150V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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GSGT5008 GSGT5008 Good-Ark Semiconductor GSGT5008.pdf Description: MOSFET, N-CH, SINGLE, 8.00A, 500
auf Bestellung 696 Stücke:
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GSGT5008 GSGT5008 Good-Ark Semiconductor GSGT5008.pdf Description: MOSFET, N-CH, SINGLE, 8.00A, 500
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GSH1MA16 GSH1MA16 Good-Ark Semiconductor GSH1MA16.pdf Description: RECTIFIER, ULTRA-FAST/HIGH EFFIC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 1600 V
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GSH1MA16 GSH1MA16 Good-Ark Semiconductor GSH1MA16.pdf Description: RECTIFIER, ULTRA-FAST/HIGH EFFIC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 1600 V
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GSH3MB12 GSH3MB12 Good-Ark Semiconductor GSH3MB12.pdf Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSH3MB12 GSH3MB12 Good-Ark Semiconductor GSH3MB12.pdf Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSHS1OB GSHS1OB Good-Ark Semiconductor GSHS1OB.pdf Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSHS1OB GSHS1OB Good-Ark Semiconductor GSHS1OB.pdf Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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139+0.15 EUR
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GSHS1Q GSHS1Q Good-Ark Semiconductor GSHS1Q.pdf Description: DIODE STANDARD 1300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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GSHS1Q GSHS1Q Good-Ark Semiconductor GSHS1Q.pdf Description: DIODE STANDARD 1300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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GSJA65R041 GSJA65R041 Good-Ark Semiconductor GSJA65R041.pdf Description: MOSFET, N-CH, SINGLE, 70.00A, 65
Input Capacitance (Ciss) (Max) @ Vds: 7132 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
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GSJA65R041 Good-Ark Semiconductor GSJA65R041.pdf MOSFET, N-CH, SINGLE, 70.00A, 65 Транзистори
Produkt ist nicht verfügbar
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GSJD60R360 GSJD60R360 Good-Ark Semiconductor GSJD60R360.pdf Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
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GSJD6505 GSJD6505 Good-Ark Semiconductor GSJD6505.pdf Description: MOSFET, N-CH, SINGLE, 5A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
Produkt ist nicht verfügbar
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GSJD6505 GSJD6505 Good-Ark Semiconductor GSJD6505.pdf Description: MOSFET, N-CH, SINGLE, 5A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
auf Bestellung 2476 Stücke:
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22+0.99 EUR
25+0.89 EUR
100+0.77 EUR
250+0.73 EUR
500+0.69 EUR
1000+0.67 EUR
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GSJG60R570 GSJG60R570 Good-Ark Semiconductor GSJG60R570.pdf Description: MOSFET, N-CH, SINGLE, 7.00A, 600
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V
auf Bestellung 1500 Stücke:
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75+1.42 EUR
150+1.12 EUR
525+0.95 EUR
1050+0.77 EUR
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GSJH4N90 GSJH4N90 Good-Ark Semiconductor GSJH4N90.pdf Description: MOSFET, N-CH, SINGLE, 4.00A, 900
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 25 V
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50+1.39 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.88 EUR
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GSJH60R360 GSJH60R360 Good-Ark Semiconductor GSJH60R360.pdf Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
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GSJH65R290 GSJH65R290 Good-Ark Semiconductor GSJH65R290.pdf Description: MOSFET, N-CH, SINGLE, 15.00A, 65
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 918 pF @ 100 V
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GSJT65R220 GSJT65R220 Good-Ark Semiconductor GSJT65R220.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
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GSJT65R220 GSJT65R220 Good-Ark Semiconductor GSJT65R220.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Produkt ist nicht verfügbar
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GSJU6520 GSJU6520 Good-Ark Semiconductor GSJU6520.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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GSK02V530 GSK02V530 Good-Ark Semiconductor GSK02V530.pdf Description: DIODE, SCHOTTKY, 200MA, 30V, SOD
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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8000+0.044 EUR
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GSK02V530 GSK02V530 Good-Ark Semiconductor GSK02V530.pdf Description: DIODE, SCHOTTKY, 200MA, 30V, SOD
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA
Produkt ist nicht verfügbar
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GSK34B GSK34B Good-Ark Semiconductor GSK3xB.pdf Description: RECTIFIER, SCHOTTKY, 3.0A, 40V,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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3000+0.14 EUR
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GSK34B GSK34B Good-Ark Semiconductor GSK3xB.pdf Description: RECTIFIER, SCHOTTKY, 3.0A, 40V,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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GSL6TVS13A GSL6TVS13A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 13V, ESGB (S
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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GSL6TVS13A GSL6TVS13A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 13V, ESGB (S
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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500+0.27 EUR
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GSL6TVS15A GSL6TVS15A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 15VWM 24.4VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.18 EUR
6000+0.15 EUR
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GSL6TVS15A GSL6TVS15A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 15VWM 24.4VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSL6TVS18A GSL6TVS18A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 18VWM 29.2VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2990 Stücke:
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35+0.61 EUR
52+0.4 EUR
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500+0.21 EUR
1000+0.19 EUR
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GSL6TVS18A GSL6TVS18A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 18VWM 29.2VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.17 EUR
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GSL6TVS20A GSL6TVS20A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 20V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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25+0.83 EUR
34+0.63 EUR
100+0.39 EUR
500+0.27 EUR
1000+0.2 EUR
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GSL6TVS20A GSL6TVS20A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 20V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
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GSL6TVS22A GSL6TVS22A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 22V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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GSL6TVS22A GSL6TVS22A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 22V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
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100+0.39 EUR
500+0.27 EUR
1000+0.2 EUR
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GSL6TVS33A GSL6TVS33A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 33VWM 53.3VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
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GSL6TVS33A GSL6TVS33A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 33VWM 53.3VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSL6TVS43A GSL6TVS43A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 43VWM 69.4VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSL6TVS43A GSL6TVS43A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS DIODE 43VWM 69.4VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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GSL6TVS48A GSL6TVS48A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 48V, ESGB (S
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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GSL6TVS48A GSL6TVS48A Good-Ark Semiconductor GSL6TVS.pdf Description: TVS, UNI-DIR, 600W, 48V, ESGB (S
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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GSLC03B006 GSLC03B006 Good-Ark Semiconductor GSLCxxB006.pdf Description: TVS DIODE 3VWM 13.9VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 13.9V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSLC03B006 GSLC03B006 Good-Ark Semiconductor GSLCxxB006.pdf Description: TVS DIODE 3VWM 13.9VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 13.9V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSLC05B006 GSLC05B006 Good-Ark Semiconductor GSLCxxB006.pdf Description: TVS DIODE 5VWM 18.3VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18.3V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSLC05B006 GSLC05B006 Good-Ark Semiconductor GSLCxxB006.pdf Description: TVS DIODE 5VWM 18.3VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18.3V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSM3Z5V1BW GSM3Z5V1BW Good-Ark Semiconductor GSM3ZxxBW.pdf Description: DIODE, ZENER, 0.20W, 51.0V, 2%,
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GSM3Z5V1BW GSM3Z5V1BW Good-Ark Semiconductor GSM3ZxxBW.pdf Description: DIODE, ZENER, 0.20W, 51.0V, 2%,
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GSM3Z5V6BW GSM3Z5V6BW Good-Ark Semiconductor GSM3ZxxBW.pdf Description: DIODE ZENER 5.6V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
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GSM3Z5V6BW GSM3Z5V6BW Good-Ark Semiconductor GSM3ZxxBW.pdf Description: DIODE ZENER 5.6V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
Produkt ist nicht verfügbar
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GSM3Z6V2BW GSM3Z6V2BW Good-Ark Semiconductor GSM3ZxxBW.pdf Description: DIODE ZENER 6.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
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GSGP5R GSGPxR.pdf
GSGP5R
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, FAST RECOVERY, GLASS
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GSGP9R115 GSGP9R115.pdf
GSGP9R115
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
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GSGP9R115 GSGP9R115.pdf
GSGP9R115
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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GSGPD540S GSGPD5xxS.pdf
GSGPD540S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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GSGPD540S GSGPD5xxS.pdf
GSGPD540S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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GSGT10240 GSGT10240.pdf
GSGT10240
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 240.00A, 1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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GSGT10240 GSGT10240.pdf
GSGT10240
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 240.00A, 1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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GSGT15140 GSGT15140.pdf
GSGT15140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 140A, 150V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
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GSGT15140 GSGT15140.pdf
GSGT15140
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 140A, 150V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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GSGT5008 GSGT5008.pdf
GSGT5008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8.00A, 500
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GSGT5008 GSGT5008.pdf
GSGT5008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8.00A, 500
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GSH1MA16 GSH1MA16.pdf
GSH1MA16
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST/HIGH EFFIC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 1600 V
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GSH1MA16 GSH1MA16.pdf
GSH1MA16
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST/HIGH EFFIC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 1600 V
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GSH3MB12 GSH3MB12.pdf
GSH3MB12
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSH3MB12 GSH3MB12.pdf
GSH3MB12
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSHS1OB GSHS1OB.pdf
GSHS1OB
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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GSHS1OB GSHS1OB.pdf
GSHS1OB
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRA-FAST RECOVERY,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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93+0.23 EUR
139+0.15 EUR
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GSHS1Q GSHS1Q.pdf
GSHS1Q
Hersteller: Good-Ark Semiconductor
Description: DIODE STANDARD 1300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 7500 Stücke:
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GSHS1Q GSHS1Q.pdf
GSHS1Q
Hersteller: Good-Ark Semiconductor
Description: DIODE STANDARD 1300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 7440 Stücke:
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GSJA65R041 GSJA65R041.pdf
GSJA65R041
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 70.00A, 65
Input Capacitance (Ciss) (Max) @ Vds: 7132 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
auf Bestellung 600 Stücke:
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GSJA65R041 GSJA65R041.pdf
Hersteller: Good-Ark Semiconductor
MOSFET, N-CH, SINGLE, 70.00A, 65 Транзистори
Produkt ist nicht verfügbar
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GSJD60R360 GSJD60R360.pdf
GSJD60R360
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
auf Bestellung 4954 Stücke:
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10+2.17 EUR
100+1.45 EUR
500+1.15 EUR
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GSJD6505 GSJD6505.pdf
GSJD6505
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
Produkt ist nicht verfügbar
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GSJD6505 GSJD6505.pdf
GSJD6505
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
auf Bestellung 2476 Stücke:
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25+0.89 EUR
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GSJG60R570 GSJG60R570.pdf
GSJG60R570
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7.00A, 600
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V
auf Bestellung 1500 Stücke:
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12+1.76 EUR
75+1.42 EUR
150+1.12 EUR
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GSJH4N90 GSJH4N90.pdf
GSJH4N90
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.00A, 900
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 25 V
auf Bestellung 1000 Stücke:
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8+2.93 EUR
50+1.39 EUR
100+1.24 EUR
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GSJH60R360 GSJH60R360.pdf
GSJH60R360
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
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GSJH65R290 GSJH65R290.pdf
GSJH65R290
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 15.00A, 65
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 918 pF @ 100 V
auf Bestellung 2000 Stücke:
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5+5.02 EUR
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GSJT65R220 GSJT65R220.pdf
GSJT65R220
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
auf Bestellung 1600 Stücke:
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GSJT65R220 GSJT65R220.pdf
GSJT65R220
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Produkt ist nicht verfügbar
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GSJU6520 GSJU6520.pdf
GSJU6520
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 809 Stücke:
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GSK02V530 GSK02V530.pdf
GSK02V530
Hersteller: Good-Ark Semiconductor
Description: DIODE, SCHOTTKY, 200MA, 30V, SOD
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 15990 Stücke:
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GSK02V530 GSK02V530.pdf
GSK02V530
Hersteller: Good-Ark Semiconductor
Description: DIODE, SCHOTTKY, 200MA, 30V, SOD
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA
Produkt ist nicht verfügbar
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GSK34B GSK3xB.pdf
GSK34B
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 3.0A, 40V,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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3000+0.14 EUR
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GSK34B GSK3xB.pdf
GSK34B
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 3.0A, 40V,
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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GSL6TVS13A GSL6TVS.pdf
GSL6TVS13A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 13V, ESGB (S
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
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GSL6TVS13A GSL6TVS.pdf
GSL6TVS13A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 13V, ESGB (S
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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GSL6TVS15A GSL6TVS.pdf
GSL6TVS15A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 15VWM 24.4VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.18 EUR
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GSL6TVS15A GSL6TVS.pdf
GSL6TVS15A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 15VWM 24.4VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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GSL6TVS18A GSL6TVS.pdf
GSL6TVS18A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 18VWM 29.2VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2990 Stücke:
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GSL6TVS18A GSL6TVS.pdf
GSL6TVS18A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 18VWM 29.2VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.17 EUR
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GSL6TVS20A GSL6TVS.pdf
GSL6TVS20A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 20V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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AnzahlPrivatkunde
25+0.83 EUR
34+0.63 EUR
100+0.39 EUR
500+0.27 EUR
1000+0.2 EUR
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GSL6TVS20A GSL6TVS.pdf
GSL6TVS20A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 20V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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3000+0.19 EUR
6000+0.18 EUR
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GSL6TVS22A GSL6TVS.pdf
GSL6TVS22A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 22V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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GSL6TVS22A GSL6TVS.pdf
GSL6TVS22A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 22V, ESGB (S
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SMAF
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
34+0.63 EUR
100+0.39 EUR
500+0.27 EUR
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GSL6TVS33A GSL6TVS.pdf
GSL6TVS33A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 33VWM 53.3VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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3000+0.17 EUR
6000+0.15 EUR
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GSL6TVS33A GSL6TVS.pdf
GSL6TVS33A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 33VWM 53.3VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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GSL6TVS43A GSL6TVS.pdf
GSL6TVS43A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 43VWM 69.4VC ESGB
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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GSL6TVS43A GSL6TVS.pdf
GSL6TVS43A
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 43VWM 69.4VC ESGB
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: eSGB (SMAF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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3000+0.17 EUR
6000+0.15 EUR
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GSL6TVS48A GSL6TVS.pdf
GSL6TVS48A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 48V, ESGB (S
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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GSL6TVS48A GSL6TVS.pdf
GSL6TVS48A
Hersteller: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 600W, 48V, ESGB (S
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMAF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
34+0.63 EUR
100+0.39 EUR
500+0.27 EUR
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GSLC03B006 GSLCxxB006.pdf
GSLC03B006
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 3VWM 13.9VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 13.9V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSLC03B006 GSLCxxB006.pdf
GSLC03B006
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 3VWM 13.9VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 13.9V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 2940 Stücke:
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GSLC05B006 GSLCxxB006.pdf
GSLC05B006
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 5VWM 18.3VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18.3V
Power - Peak Pulse: 350W
Power Line Protection: No
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GSLC05B006 GSLCxxB006.pdf
GSLC05B006
Hersteller: Good-Ark Semiconductor
Description: TVS DIODE 5VWM 18.3VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18.3V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 963 Stücke:
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44+0.48 EUR
72+0.3 EUR
100+0.21 EUR
115+0.18 EUR
500+0.13 EUR
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GSM3Z5V1BW GSM3ZxxBW.pdf
GSM3Z5V1BW
Hersteller: Good-Ark Semiconductor
Description: DIODE, ZENER, 0.20W, 51.0V, 2%,
Produkt ist nicht verfügbar
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GSM3Z5V1BW GSM3ZxxBW.pdf
GSM3Z5V1BW
Hersteller: Good-Ark Semiconductor
Description: DIODE, ZENER, 0.20W, 51.0V, 2%,
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3000+0.083 EUR
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GSM3Z5V6BW GSM3ZxxBW.pdf
GSM3Z5V6BW
Hersteller: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
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AnzahlPrivatkunde
3000+0.076 EUR
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GSM3Z5V6BW GSM3ZxxBW.pdf
GSM3Z5V6BW
Hersteller: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
Produkt ist nicht verfügbar
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GSM3Z6V2BW GSM3ZxxBW.pdf
GSM3Z6V2BW
Hersteller: Good-Ark Semiconductor
Description: DIODE ZENER 6.2V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.075 EUR
6000+0.068 EUR
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