GSJA65R041 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 70.00A, 65, Input Capacitance (Ciss) (Max) @ Vds: 7132 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, FET Type: N-Channel.