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GSJA65R041

GSJA65R041 Good-Ark Semiconductor

GSJA65R041.pdf
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 70.00A, 65
Input Capacitance (Ciss) (Max) @ Vds: 7132 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
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Technische Details GSJA65R041 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 70.00A, 65, Input Capacitance (Ciss) (Max) @ Vds: 7132 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, FET Type: N-Channel.

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GSJA65R041 Hersteller : Good-Ark Semiconductor GSJA65R041.pdf MOSFET, N-CH, SINGLE, 70.00A, 65 Група товару: Транзистори Од. вим: шт
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