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GSFU2016 GSFU2016 Good-Ark Semiconductor GSFU2016.pdf Description: MOSFET, N-CH, SINGLE, 18.00A, 20
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
auf Bestellung 880 Stücke:
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8+2.24 EUR
50+1.05 EUR
100+0.94 EUR
500+0.73 EUR
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GSFU250N06 GSFU250N06 Good-Ark Semiconductor GSFU250N06.pdf Description: MOSFET, N-CH, SINGLE, 64A, 60V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 30 V
auf Bestellung 1975 Stücke:
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15+1.23 EUR
50+0.56 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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GSFU6008 GSFU6008 Good-Ark Semiconductor GSFU6008.pdf Description: MOSFET, N-CH, SINGLE, 7.00A, 600
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V
auf Bestellung 1000 Stücke:
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8+2.5 EUR
50+1.19 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
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GSFU60R190 GSFU60R190 Good-Ark Semiconductor GSFU60R190.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 60
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1174 pF @ 100 V
auf Bestellung 985 Stücke:
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GSFU60R360 GSFU60R360 Good-Ark Semiconductor GSFU60R360.pdf Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
auf Bestellung 903 Stücke:
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50+1.29 EUR
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GSFU6513 GSFU6513 Good-Ark Semiconductor GSFU6513.pdf Description: MOSFET, N-CH, SINGLE, 13.00A, 65
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1746 pF @ 25 V
auf Bestellung 2370 Stücke:
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8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
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GSFU8005 GSFU8005 Good-Ark Semiconductor GSFU8005.pdf Description: MOSFET, N-CH, SINGLE, 5.00A, 800
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 677.1 pF @ 25 V
auf Bestellung 988 Stücke:
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50+0.98 EUR
100+0.87 EUR
500+0.68 EUR
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GSFU80R280 GSFU80R280 Good-Ark Semiconductor GSFU80R280.pdf Description: MOSFET, N-CH, SINGLE, 17.00A, 80
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 100 V
auf Bestellung 1000 Stücke:
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5+4.15 EUR
50+2.24 EUR
100+2.04 EUR
500+1.69 EUR
1000+1.57 EUR
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GSFU9504 GSFU9504 Good-Ark Semiconductor GSFU9504.pdf Description: MOSFET, N-CH, SINGLE, 5A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V
auf Bestellung 970 Stücke:
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4+5.47 EUR
10+3.58 EUR
100+2.5 EUR
500+2.04 EUR
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GSFU95R500 GSFU95R500 Good-Ark Semiconductor GSFU95R500.pdf Description: MOSFET, N-CH, SINGLE, 10A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 34W (Tj)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V
auf Bestellung 990 Stücke:
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3+6.51 EUR
10+5.46 EUR
100+4.42 EUR
500+3.93 EUR
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GSFW02009 GSFW02009 Good-Ark Semiconductor GSFW02009.pdf Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 7396 Stücke:
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48+0.37 EUR
81+0.22 EUR
99+0.18 EUR
135+0.13 EUR
250+0.11 EUR
500+0.093 EUR
1000+0.082 EUR
2500+0.069 EUR
5000+0.061 EUR
Mindestbestellmenge: 48
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GSFW02009 GSFW02009 Good-Ark Semiconductor GSFW02009.pdf Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 10000 Stücke:
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10000+0.054 EUR
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GSFW0501 GSFW0501 Good-Ark Semiconductor GSFW0501.pdf Description: MOSFET, P-CH, SINGLE, -130MA, -5
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V
auf Bestellung 10000 Stücke:
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10000+0.048 EUR
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GSFW0501 GSFW0501 Good-Ark Semiconductor GSFW0501.pdf Description: MOSFET, P-CH, SINGLE, -130MA, -5
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V
auf Bestellung 9995 Stücke:
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53+0.33 EUR
56+0.32 EUR
59+0.3 EUR
103+0.17 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.072 EUR
2500+0.061 EUR
5000+0.055 EUR
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GSFW3004 GSFW3004 Good-Ark Semiconductor GSFW3004.pdf Description: MOSFET, N-CH, SINGLE, 0.40A, 30V
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V
auf Bestellung 6000 Stücke:
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3000+0.07 EUR
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GSFW3004 GSFW3004 Good-Ark Semiconductor GSFW3004.pdf Description: MOSFET, N-CH, SINGLE, 0.40A, 30V
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V
Produkt ist nicht verfügbar
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GSFX65R220 GSFX65R220 Good-Ark Semiconductor GSFX65R220.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Produkt ist nicht verfügbar
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GSFX65R220 GSFX65R220 Good-Ark Semiconductor GSFX65R220.pdf Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
auf Bestellung 5000 Stücke:
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GSGA6R015 GSGA6R015 Good-Ark Semiconductor GSGA6R015.pdf Description: MOSFET, N-CH, SINGLE, 175A, 150V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 854 Stücke:
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3+8.41 EUR
30+5.06 EUR
120+4.29 EUR
510+3.86 EUR
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GSGBJ1510 GSGBJ1510 Good-Ark Semiconductor GSGBJ15xx.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 402 Stücke:
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12+1.58 EUR
20+0.92 EUR
105+0.64 EUR
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GSGBJ5001H GSGBJ5001H Good-Ark Semiconductor GSGBJ50xxH.pdf Description: BRIDGE RECT 1PHASE 100V 50A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 806 Stücke:
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6+3.36 EUR
10+2.15 EUR
420+1.18 EUR
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GSGBJ5010H GSGBJ5010H Good-Ark Semiconductor GSGBJ50xxH.pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 680 Stücke:
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GSGC1045S GSGC1045S Good-Ark Semiconductor GSGC1045S.pdf Description: DIODE SCHOTTKY 45V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 40 V
Produkt ist nicht verfügbar
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GSGC1045S GSGC1045S Good-Ark Semiconductor GSGC1045S.pdf Description: DIODE SCHOTTKY 45V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 40 V
auf Bestellung 2603 Stücke:
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GSGC1060S GSGC1060S Good-Ark Semiconductor GSGC1060S.pdf Description: DIODE SCHOTTKY 60V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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GSGC1060S GSGC1060S Good-Ark Semiconductor GSGC1060S.pdf Description: DIODE SCHOTTKY 60V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 666 Stücke:
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GSGC10CS GSGC10CS Good-Ark Semiconductor GSGC10CS.pdf Description: DIODE SCHOTTKY 200V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 206pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 5000 Stücke:
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GSGC10CS GSGC10CS Good-Ark Semiconductor GSGC10CS.pdf Description: DIODE SCHOTTKY 200V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 206pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 4962 Stücke:
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GSGC151BS GSGC151BS Good-Ark Semiconductor GSGC151BS.pdf Description: RECTIFIER, SCHOTTKY, 15A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1780pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 5000 Stücke:
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GSGC151BS GSGC151BS Good-Ark Semiconductor GSGC151BS.pdf Description: RECTIFIER, SCHOTTKY, 15A, 100V,
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1780pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 5000 Stücke:
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GSGC1545SA GSGC1545SA Good-Ark Semiconductor GSGC1545SA.pdf Description: RECTIFIER, SCHOTTKY, 15A, 45V, E
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 5000 Stücke:
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GSGC1545SA GSGC1545SA Good-Ark Semiconductor GSGC1545SA.pdf Description: RECTIFIER, SCHOTTKY, 15A, 45V, E
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 5000 Stücke:
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5000+0.29 EUR
Mindestbestellmenge: 5000
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GSGG6504 GSGG6504 Good-Ark Semiconductor GSGG6504.pdf Description: MOSFET, N-CH, SINGLE, 4.00A, 650
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V
auf Bestellung 150 Stücke:
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100+0.95 EUR
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GSGH7R515 GSGH7R515 Good-Ark Semiconductor GSGH7R515.pdf Description: MOSFET, N-CH, SINGLE, 175.00A, 1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 376W (Ta)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 988 Stücke:
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50+3.45 EUR
100+3.16 EUR
500+2.66 EUR
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GSGN0648 GSGN0648 Good-Ark Semiconductor GSGN0648.pdf Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
auf Bestellung 2564 Stücke:
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12+1.51 EUR
20+0.92 EUR
25+0.76 EUR
100+0.58 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.4 EUR
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GSGN0648 GSGN0648 Good-Ark Semiconductor GSGN0648.pdf Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
auf Bestellung 6000 Stücke:
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3000+0.34 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000
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GSGP0160SD GSGP0160SD Good-Ark Semiconductor GSGP0140SD-GSGP0160SD.pdf Description: RECTIFIER, SCHOTTKY, LOW VF, 1A,
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 6000 Stücke:
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3000+0.067 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
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GSGP0160SD GSGP0160SD Good-Ark Semiconductor GSGP0140SD-GSGP0160SD.pdf Description: RECTIFIER, SCHOTTKY, LOW VF, 1A,
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 5690 Stücke:
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500+0.088 EUR
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GSGP0230S GSGP0230S Good-Ark Semiconductor GSGP0230S-GSGP0240S.pdf Description: DIODE SCHOTTKY 30V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 2195 Stücke:
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GSGP0230S GSGP0230S Good-Ark Semiconductor GSGP0230S-GSGP0240S.pdf Description: DIODE SCHOTTKY 30V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 3000 Stücke:
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GSGP0230SD GSGP0230SD Good-Ark Semiconductor GSGP0230SD-GSGP0240SD.pdf Description: RECTIFIER, SCHOTTKY, 2A, 30V, ES
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
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3000+0.082 EUR
Mindestbestellmenge: 3000
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GSGP0230SD GSGP0230SD Good-Ark Semiconductor GSGP0230SD-GSGP0240SD.pdf Description: RECTIFIER, SCHOTTKY, 2A, 30V, ES
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
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116+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
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GSGP0240SD GSGP0240SD Good-Ark Semiconductor GSGP0230SD-GSGP0240SD.pdf Description: DIODE SCHOTTKY 40V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSGP0240SD GSGP0240SD Good-Ark Semiconductor GSGP0230SD-GSGP0240SD.pdf Description: DIODE SCHOTTKY 40V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
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GSGP0260SD GSGP0260SD Good-Ark Semiconductor GSGP0260SD.pdf Description: DIODE SCHOTTKY 60V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSGP0260SD GSGP0260SD Good-Ark Semiconductor GSGP0260SD.pdf Description: DIODE SCHOTTKY 60V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 3138 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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GSGP06142 GSGP06142 Good-Ark Semiconductor GSGP06142.pdf Description: MOSFET, N-CH, SINGLE, 140.00A, 6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4947 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.94 EUR
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GSGP06142 GSGP06142 Good-Ark Semiconductor GSGP06142.pdf Description: MOSFET, N-CH, SINGLE, 140.00A, 6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4947 pF @ 30 V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
10+1.99 EUR
25+1.88 EUR
100+1.55 EUR
250+1.45 EUR
500+1.28 EUR
1000+1.01 EUR
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GSGP0R703 GSGP0R703 Good-Ark Semiconductor GSGP0R703.pdf Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
10+2.21 EUR
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1000+1.19 EUR
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GSGP0R703 GSGP0R703 Good-Ark Semiconductor GSGP0R703.pdf Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP1R103 GSGP1R103 Good-Ark Semiconductor GSGP1R103.pdf Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP1R103 GSGP1R103 Good-Ark Semiconductor GSGP1R103.pdf Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.67 EUR
10000+0.64 EUR
Mindestbestellmenge: 5000
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GSGP1R404 GSGP1R404 Good-Ark Semiconductor GSGP1R404.pdf Description: MOSFET, N-CH, SINGLE, 160.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4822 pF @ 20 V
auf Bestellung 10000 Stücke:
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10000+0.77 EUR
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GSGP1R404 GSGP1R404 Good-Ark Semiconductor GSGP1R404.pdf Description: MOSFET, N-CH, SINGLE, 160.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4822 pF @ 20 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+1.68 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
2000+0.85 EUR
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GSGP1R703 GSGP1R703 Good-Ark Semiconductor GSGP1R703.pdf Description: MOSFET, N-CH, SINGLE, 138.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3406 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.83 EUR
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GSGP1R703 GSGP1R703 Good-Ark Semiconductor GSGP1R703.pdf Description: MOSFET, N-CH, SINGLE, 138.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3406 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP2R403 GSGP2R403 Good-Ark Semiconductor GSGP2R403.pdf Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 22.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2566 pF @ 15 V
auf Bestellung 10000 Stücke:
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5000+0.51 EUR
10000+0.5 EUR
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GSGP2R403 GSGP2R403 Good-Ark Semiconductor GSGP2R403.pdf Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 22.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2566 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP2R608 GSGP2R608 Good-Ark Semiconductor GSGP2R608.pdf Description: MOSFET, N-CH, SINGLE, 170.00A, 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6022 pF @ 40 V
auf Bestellung 10000 Stücke:
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5000+1.07 EUR
Mindestbestellmenge: 5000
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GSGP2R608 GSGP2R608 Good-Ark Semiconductor GSGP2R608.pdf Description: MOSFET, N-CH, SINGLE, 170.00A, 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6022 pF @ 40 V
Produkt ist nicht verfügbar
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GSFU2016 GSFU2016.pdf
GSFU2016
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 18.00A, 20
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
50+1.05 EUR
100+0.94 EUR
500+0.73 EUR
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GSFU250N06 GSFU250N06.pdf
GSFU250N06
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 64A, 60V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 30 V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
50+0.56 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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GSFU6008 GSFU6008.pdf
GSFU6008
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 7.00A, 600
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
50+1.19 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
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GSFU60R190 GSFU60R190.pdf
GSFU60R190
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 60
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1174 pF @ 100 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
50+2.39 EUR
100+2.15 EUR
500+1.74 EUR
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GSFU60R360 GSFU60R360.pdf
GSFU60R360
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 11.00A, 60
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
50+1.29 EUR
100+1.15 EUR
500+0.91 EUR
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GSFU6513 GSFU6513.pdf
GSFU6513
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 13.00A, 65
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1746 pF @ 25 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
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GSFU8005 GSFU8005.pdf
GSFU8005
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.00A, 800
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 677.1 pF @ 25 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
50+0.98 EUR
100+0.87 EUR
500+0.68 EUR
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GSFU80R280 GSFU80R280.pdf
GSFU80R280
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 17.00A, 80
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
50+2.24 EUR
100+2.04 EUR
500+1.69 EUR
1000+1.57 EUR
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GSFU9504 GSFU9504.pdf
GSFU9504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V
auf Bestellung 970 Stücke:
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Anzahl Preis
4+5.47 EUR
10+3.58 EUR
100+2.5 EUR
500+2.04 EUR
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GSFU95R500 GSFU95R500.pdf
GSFU95R500
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 10A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 34W (Tj)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
10+5.46 EUR
100+4.42 EUR
500+3.93 EUR
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GSFW02009 GSFW02009.pdf
GSFW02009
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 7396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
81+0.22 EUR
99+0.18 EUR
135+0.13 EUR
250+0.11 EUR
500+0.093 EUR
1000+0.082 EUR
2500+0.069 EUR
5000+0.061 EUR
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GSFW02009 GSFW02009.pdf
GSFW02009
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.85A, -2
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.054 EUR
Mindestbestellmenge: 10000
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GSFW0501 GSFW0501.pdf
GSFW0501
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -130MA, -5
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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GSFW0501 GSFW0501.pdf
GSFW0501
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -130MA, -5
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V
auf Bestellung 9995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
56+0.32 EUR
59+0.3 EUR
103+0.17 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.072 EUR
2500+0.061 EUR
5000+0.055 EUR
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GSFW3004 GSFW3004.pdf
GSFW3004
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.40A, 30V
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.07 EUR
6000+0.062 EUR
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GSFW3004 GSFW3004.pdf
GSFW3004
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.40A, 30V
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V
Produkt ist nicht verfügbar
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GSFX65R220 GSFX65R220.pdf
GSFX65R220
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
Produkt ist nicht verfügbar
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GSFX65R220 GSFX65R220.pdf
GSFX65R220
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 65
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.09 EUR
Mindestbestellmenge: 2500
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GSGA6R015 GSGA6R015.pdf
GSGA6R015
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 175A, 150V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
30+5.06 EUR
120+4.29 EUR
510+3.86 EUR
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GSGBJ1510 GSGBJ15xx.pdf
GSGBJ1510
Hersteller: Good-Ark Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 402 Stücke:
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Anzahl Preis
12+1.58 EUR
20+0.92 EUR
105+0.64 EUR
Mindestbestellmenge: 12
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GSGBJ5001H GSGBJ50xxH.pdf
GSGBJ5001H
Hersteller: Good-Ark Semiconductor
Description: BRIDGE RECT 1PHASE 100V 50A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
420+1.18 EUR
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GSGBJ5010H GSGBJ50xxH.pdf
GSGBJ5010H
Hersteller: Good-Ark Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 50A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ(5S)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
15+1.69 EUR
105+1.22 EUR
510+0.97 EUR
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GSGC1045S GSGC1045S.pdf
GSGC1045S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 40 V
Produkt ist nicht verfügbar
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GSGC1045S GSGC1045S.pdf
GSGC1045S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 40 V
auf Bestellung 2603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
2000+0.29 EUR
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GSGC1060S GSGC1060S.pdf
GSGC1060S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 60V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.26 EUR
10000+0.24 EUR
15000+0.23 EUR
Mindestbestellmenge: 5000
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GSGC1060S GSGC1060S.pdf
GSGC1060S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 60V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
Mindestbestellmenge: 16
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GSGC10CS GSGC10CS.pdf
GSGC10CS
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 200V 10A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 206pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.26 EUR
Mindestbestellmenge: 5000
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GSGC10CS GSGC10CS.pdf
GSGC10CS
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 200V 10A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 206pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
2000+0.29 EUR
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GSGC151BS GSGC151BS.pdf
GSGC151BS
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 15A, 100V,
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1780pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.46 EUR
Mindestbestellmenge: 5000
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GSGC151BS GSGC151BS.pdf
GSGC151BS
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 15A, 100V,
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1780pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
16+1.14 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.55 EUR
2000+0.5 EUR
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GSGC1545SA GSGC1545SA.pdf
GSGC1545SA
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 15A, 45V, E
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
20+0.88 EUR
24+0.75 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.34 EUR
2000+0.31 EUR
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GSGC1545SA GSGC1545SA.pdf
GSGC1545SA
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 15A, 45V, E
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 5000 Stücke:
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5000+0.29 EUR
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GSGG6504 GSGG6504.pdf
GSGG6504
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.00A, 650
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V
auf Bestellung 150 Stücke:
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Anzahl Preis
13+1.41 EUR
15+1.23 EUR
25+1.16 EUR
100+0.95 EUR
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GSGH7R515 GSGH7R515.pdf
GSGH7R515
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 175.00A, 1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 376W (Ta)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 988 Stücke:
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Anzahl Preis
3+6.25 EUR
50+3.45 EUR
100+3.16 EUR
500+2.66 EUR
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GSGN0648 GSGN0648.pdf
GSGN0648
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
auf Bestellung 2564 Stücke:
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Anzahl Preis
12+1.51 EUR
20+0.92 EUR
25+0.76 EUR
100+0.58 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.4 EUR
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GSGN0648 GSGN0648.pdf
GSGN0648
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.34 EUR
6000+0.31 EUR
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GSGP0160SD GSGP0140SD-GSGP0160SD.pdf
GSGP0160SD
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, LOW VF, 1A,
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.067 EUR
6000+0.06 EUR
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GSGP0160SD GSGP0140SD-GSGP0160SD.pdf
GSGP0160SD
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, LOW VF, 1A,
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 5690 Stücke:
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Anzahl Preis
72+0.25 EUR
102+0.17 EUR
152+0.12 EUR
500+0.088 EUR
1000+0.079 EUR
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GSGP0230S GSGP0230S-GSGP0240S.pdf
GSGP0230S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 30V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 2195 Stücke:
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Anzahl Preis
48+0.37 EUR
77+0.23 EUR
124+0.14 EUR
500+0.1 EUR
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GSGP0230S GSGP0230S-GSGP0240S.pdf
GSGP0230S
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 30V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.077 EUR
Mindestbestellmenge: 3000
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GSGP0230SD GSGP0230SD-GSGP0240SD.pdf
GSGP0230SD
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 2A, 30V, ES
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.082 EUR
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GSGP0230SD GSGP0230SD-GSGP0240SD.pdf
GSGP0230SD
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, SCHOTTKY, 2A, 30V, ES
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
73+0.24 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
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GSGP0240SD GSGP0230SD-GSGP0240SD.pdf
GSGP0240SD
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 40V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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GSGP0240SD GSGP0230SD-GSGP0240SD.pdf
GSGP0240SD
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 40V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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GSGP0260SD GSGP0260SD.pdf
GSGP0260SD
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 60V 2A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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GSGP0260SD GSGP0260SD.pdf
GSGP0260SD
Hersteller: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 60V 2A SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 3138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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GSGP06142 GSGP06142.pdf
GSGP06142
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 140.00A, 6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4947 pF @ 30 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.94 EUR
Mindestbestellmenge: 3000
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GSGP06142 GSGP06142.pdf
GSGP06142
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 140.00A, 6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4947 pF @ 30 V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
10+1.99 EUR
25+1.88 EUR
100+1.55 EUR
250+1.45 EUR
500+1.28 EUR
1000+1.01 EUR
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GSGP0R703 GSGP0R703.pdf
GSGP0R703
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.21 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.19 EUR
2000+1.12 EUR
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GSGP0R703 GSGP0R703.pdf
GSGP0R703
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP1R103 GSGP1R103.pdf
GSGP1R103
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP1R103 GSGP1R103.pdf
GSGP1R103
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.67 EUR
10000+0.64 EUR
Mindestbestellmenge: 5000
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GSGP1R404 GSGP1R404.pdf
GSGP1R404
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 160.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4822 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.81 EUR
10000+0.77 EUR
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GSGP1R404 GSGP1R404.pdf
GSGP1R404
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 160.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4822 pF @ 20 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
11+1.68 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
2000+0.85 EUR
Mindestbestellmenge: 9
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GSGP1R703 GSGP1R703.pdf
GSGP1R703
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 138.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3406 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.83 EUR
10000+0.79 EUR
Mindestbestellmenge: 5000
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GSGP1R703 GSGP1R703.pdf
GSGP1R703
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 138.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3406 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP2R403 GSGP2R403.pdf
GSGP2R403
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 22.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2566 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.51 EUR
10000+0.5 EUR
Mindestbestellmenge: 5000
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GSGP2R403 GSGP2R403.pdf
GSGP2R403
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 22.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2566 pF @ 15 V
Produkt ist nicht verfügbar
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GSGP2R608 GSGP2R608.pdf
GSGP2R608
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 170.00A, 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6022 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.07 EUR
Mindestbestellmenge: 5000
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GSGP2R608 GSGP2R608.pdf
GSGP2R608
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 170.00A, 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6022 pF @ 40 V
Produkt ist nicht verfügbar
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