GSFQ6R803 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 30
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details GSFQ6R803 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 30, Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.6W (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote GSFQ6R803 nach Preis ab 0.24 EUR bis 0.9 EUR
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GSFQ6R803 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 20.00A, 30 Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 1940 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFQ6R803 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 20.00A, 30
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 20.00A, 30
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |