GSFT3R110 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 180.00A, 1
Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 224W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 10+ | 3.18 EUR |
| 100+ | 2.29 EUR |
| 800+ | 1.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GSFT3R110 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 180.00A, 1, Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 224W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.