GSFU9504

GSFU9504 Good-Ark Semiconductor


GSFU9504.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 950V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V
auf Bestellung 970 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
10+4 EUR
100+2.79 EUR
500+2.28 EUR
Mindestbestellmenge: 3
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Technische Details GSFU9504 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 5A, 950V,, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V.