GSFN0205 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, DUAL, -5.5A, -20V,
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details GSFN0205 Good-Ark Semiconductor
Description: MOSFET, P-CH, DUAL, -5.5A, -20V,, Part Status: Active, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote GSFN0205 nach Preis ab 0.48 EUR bis 1.24 EUR
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GSFN0205 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, DUAL, -5.5A, -20V, Part Status: Active Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFN0205 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, DUAL, -5.5A, -20V,
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, DUAL, -5.5A, -20V,
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 20+ | 1.05 EUR |
| 25+ | 0.99 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.48 EUR |