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IV1D06006O2 IV1D06006O2 Inventchip IV1D06006O2_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 17.4A TO220
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 17.4A
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IV1D06020T2 IV1D06020T2 Inventchip Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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IV1D12005O2 IV1D12005O2 Inventchip 1599706780871299.pdf Description: DIODE SIL CARB 1200V 17A TO220
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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IV1D12010O2 IV1D12010O2 Inventchip 1599706340406274.pdf Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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IV1D12010T2 IV1D12010T2 Inventchip 1599705049385290.pdf Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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IV1D12015T2 IV1D12015T2 Inventchip 1599706412830735.pdf Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
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IV1D12020T2 IV1D12020T2 Inventchip IV1D12020T2_V1.1_datasheet.pdf Description: DIODE SIL CARB 1.2KV 54A TO247-2
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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IV1D12020T3 IV1D12020T3 Inventchip 1599705521213647.pdf Description: SIC DIODE, 1200V 20A(10A/LEG), T
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IV1D12030U3 IV1D12030U3 Inventchip IV1D12030U3_V1.1_datasheet.pdf Description: SIC DIODE, 1200V 30A(15A/LEG), T
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IV1Q12050T3 IV1Q12050T3 Inventchip 1604555689872370.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
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IV1Q12050T4 IV1Q12050T4 Inventchip 1604555720235348.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12160T4 IV1Q12160T4 Inventchip 1604555975325242.pdf Description: SIC MOSFET, 1200V 160MOHM, TO-24
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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IV1Q12750O3 IV1Q12750O3 Inventchip IV1Q12750O3.pdf Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV1Q12750T3 IV1Q12750T3 Inventchip Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV2Q06025D7Z IV2Q06025D7Z Inventchip IV2Q06025D7Z.pdf Description: GEN 2, SIC MOSFET, 650V 25MOHM,
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-263-7
Packaging: Tube
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IV2Q12040D7Z IV2Q12040D7Z Inventchip IV2Q12040D7Z.pdf Description: GEN2, SIC MOSFET, 1200V 40MOHM,
Packaging: Strip
Package / Case: TO-263-8, D2PAK (7 Leads + Tab)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 9mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
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IV2Q12160T4Z IV2Q12160T4Z Inventchip IV2Q12160T4Z.pdf Description: GEN2, SIC MOSFET, 1200V 160MOHM,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
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IV2Q171R0D7Z IV2Q171R0D7Z Inventchip IV2Q171R0D7Z.pdf Description: GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging: Strip
Package / Case: TO-263-7
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 380uA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V
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IV2Q171R0T3 IV2Q171R0T3 Inventchip IV2Q171R0T3.pdf Description: GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 380uA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V
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IV3Q12035D7Z IV3Q12035D7Z Inventchip IV3Q12035D7Z.pdf Description: GEN3, SIC MOSFET, 1200V 35MOHM,
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-263-7
Packaging: Strip
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401DR.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401DR.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401DR Inventchip IVCR1401DR.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401DR Inventchip IVCR1401DR.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1402DPQR IVCR1402DPQR Inventchip IVCR1402Q.pdf Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 15V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1402DPQR IVCR1402DPQR Inventchip IVCR1402Q.pdf Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 15V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407ASR IVCR1407ASR Inventchip IVCR1407A.pdf Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407ASR IVCR1407ASR Inventchip IVCR1407A.pdf Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407SR IVCR1407SR Inventchip IVCR1407.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1407SR IVCR1407SR Inventchip IVCR1407.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1412SR IVCR1412SR Inventchip IVCR1412.pdf Description: NEXTDRIVE COMPACT SIC MOSFET DR
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-6
Rise / Fall Time (Typ): 12ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1412SR IVCR1412SR Inventchip IVCR1412.pdf Description: NEXTDRIVE COMPACT SIC MOSFET DR
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-6
Rise / Fall Time (Typ): 12ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1801ASR IVCR1801ASR Inventchip IVCR1801A.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A/
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6L
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-6L
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1801ASR IVCR1801ASR Inventchip IVCR1801A.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A/
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6L
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-6L
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR2403DR IVCR2403DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2403DR IVCR2403DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2404DR IVCR2404DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2404DR IVCR2404DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2405DR IVCR2405DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2405DR IVCR2405DR Inventchip IVCR2405.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR2504DR IVCR2504DR Inventchip IVCR2504.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2504DR IVCR2504DR Inventchip IVCR2504.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IV1D06006O2 IV1D06006O2_V1.0_datasheet.pdf
IV1D06006O2
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 17.4A TO220
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 17.4A
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IV1D06020T2
IV1D06020T2
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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IV1D12005O2 1599706780871299.pdf
IV1D12005O2
Hersteller: Inventchip
Description: DIODE SIL CARB 1200V 17A TO220
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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IV1D12010O2 1599706340406274.pdf
IV1D12010O2
Hersteller: Inventchip
Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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IV1D12010T2 1599705049385290.pdf
IV1D12010T2
Hersteller: Inventchip
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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IV1D12015T2 1599706412830735.pdf
IV1D12015T2
Hersteller: Inventchip
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
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IV1D12020T2 IV1D12020T2_V1.1_datasheet.pdf
IV1D12020T2
Hersteller: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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IV1D12020T3 1599705521213647.pdf
IV1D12020T3
Hersteller: Inventchip
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IV1D12030U3 IV1D12030U3_V1.1_datasheet.pdf
IV1D12030U3
Hersteller: Inventchip
Description: SIC DIODE, 1200V 30A(15A/LEG), T
Produkt ist nicht verfügbar
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IV1Q12050T3 1604555689872370.pdf
IV1Q12050T3
Hersteller: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
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IV1Q12050T4 1604555720235348.pdf
IV1Q12050T4
Hersteller: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Produkt ist nicht verfügbar
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IV1Q12160T4 1604555975325242.pdf
IV1Q12160T4
Hersteller: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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IV1Q12750O3 IV1Q12750O3.pdf
IV1Q12750O3
Hersteller: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
Produkt ist nicht verfügbar
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IV1Q12750T3
IV1Q12750T3
Hersteller: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
Produkt ist nicht verfügbar
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IV2Q06025D7Z IV2Q06025D7Z.pdf
IV2Q06025D7Z
Hersteller: Inventchip
Description: GEN 2, SIC MOSFET, 650V 25MOHM,
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-263-7
Packaging: Tube
Produkt ist nicht verfügbar
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IV2Q12040D7Z IV2Q12040D7Z.pdf
IV2Q12040D7Z
Hersteller: Inventchip
Description: GEN2, SIC MOSFET, 1200V 40MOHM,
Packaging: Strip
Package / Case: TO-263-8, D2PAK (7 Leads + Tab)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 9mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
auf Bestellung 55 Stücke:
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IV2Q12160T4Z IV2Q12160T4Z.pdf
IV2Q12160T4Z
Hersteller: Inventchip
Description: GEN2, SIC MOSFET, 1200V 160MOHM,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
Produkt ist nicht verfügbar
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IV2Q171R0D7Z IV2Q171R0D7Z.pdf
IV2Q171R0D7Z
Hersteller: Inventchip
Description: GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging: Strip
Package / Case: TO-263-7
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 380uA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V
Produkt ist nicht verfügbar
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IV2Q171R0T3 IV2Q171R0T3.pdf
IV2Q171R0T3
Hersteller: Inventchip
Description: GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 380uA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V
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IV3Q12035D7Z IV3Q12035D7Z.pdf
IV3Q12035D7Z
Hersteller: Inventchip
Description: GEN3, SIC MOSFET, 1200V 35MOHM,
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-263-7
Packaging: Strip
auf Bestellung 60 Stücke:
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2+17.99 EUR
10+12.39 EUR
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IVCC1104EDR
IVCC1104EDR
Hersteller: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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IVCC1104EDR
IVCC1104EDR
Hersteller: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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IVCR1401DPR IVCR1401DR.pdf
IVCR1401DPR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2803 Stücke:
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8+2.75 EUR
11+2 EUR
25+1.82 EUR
100+1.62 EUR
250+1.51 EUR
500+1.46 EUR
1000+1.44 EUR
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IVCR1401DPR IVCR1401DR.pdf
IVCR1401DPR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1401DR IVCR1401DR.pdf
IVCR1401DR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1401DR IVCR1401DR.pdf
IVCR1401DR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3086 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
11+1.96 EUR
25+1.78 EUR
100+1.58 EUR
250+1.49 EUR
500+1.43 EUR
1000+1.42 EUR
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IVCR1402DPQR IVCR1402Q.pdf
IVCR1402DPQR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 15V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1402DPQR IVCR1402Q.pdf
IVCR1402DPQR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 15V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407ASR IVCR1407A.pdf
IVCR1407ASR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407ASR IVCR1407A.pdf
IVCR1407ASR
Hersteller: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 35V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407SR IVCR1407.pdf
IVCR1407SR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1407SR IVCR1407.pdf
IVCR1407SR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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48+0.44 EUR
54+0.39 EUR
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IVCR1412SR IVCR1412.pdf
IVCR1412SR
Hersteller: Inventchip
Description: NEXTDRIVE COMPACT SIC MOSFET DR
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-6
Rise / Fall Time (Typ): 12ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1412SR IVCR1412.pdf
IVCR1412SR
Hersteller: Inventchip
Description: NEXTDRIVE COMPACT SIC MOSFET DR
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-6
Rise / Fall Time (Typ): 12ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1801ASR IVCR1801A.pdf
IVCR1801ASR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A/
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6L
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-6L
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR1801ASR IVCR1801A.pdf
IVCR1801ASR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A/
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6L
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-6L
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3774 Stücke:
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22+0.96 EUR
31+0.68 EUR
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IVCR2403DR IVCR2405.pdf
IVCR2403DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2403DR IVCR2405.pdf
IVCR2403DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2404DR IVCR2405.pdf
IVCR2404DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IVCR2404DR IVCR2405.pdf
IVCR2404DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2405DR IVCR2405.pdf
IVCR2405DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IVCR2405DR IVCR2405.pdf
IVCR2405DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
37+0.57 EUR
100+0.5 EUR
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500+0.44 EUR
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IVCR2504DR IVCR2504.pdf
IVCR2504DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IVCR2504DR IVCR2504.pdf
IVCR2504DR
Hersteller: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH