IV1D06006P3 Inventchip
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.99 EUR |
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Technische Details IV1D06006P3 Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-3, Current - Average Rectified (Io): 16.7A, Capacitance @ Vr, F: 224pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IV1D06006P3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IV1D06006P3 | Inventchip |
Description: DIODE SIL CARB 650V 16.7A TO2523 Current - Reverse Leakage @ Vr: 10 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-3 Current - Average Rectified (Io): 16.7A Capacitance @ Vr, F: 224pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IV1D06006P3 |
|
Hersteller: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH