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IXFL82N60P IXFL82N60P Littelfuse Inc. Description: MOSFET N-CH 600V 55A ISOPLUS264
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS264™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXFN102N30P IXFN102N30P Littelfuse Inc. IXFN102N30P.pdf Description: MOSFET N-CH 300V 88A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 270 Stücke:
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1+39.1 EUR
10+34.84 EUR
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IXFN340N07 IXFN340N07 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn340n07_datasheet.pdf.pdf Description: MOSFET N-CH 70V 340A SOT-227B
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 490 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Produkt ist nicht verfügbar
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IXFN55N50 IXFN55N50 Littelfuse Inc. media?resourcetype=datasheets&itemid=7f724954-c5b4-4c7e-b19d-87773ab9b1fe&filename=littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_55n50_datasheet.pdf description Description: MOSFET N-CH 500V 55A SOT-227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Part Status: Obsolete
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFR102N30P IXFR102N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr102n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 60A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 540 Stücke:
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300+23.78 EUR
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IXFR180N15P IXFR180N15P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 100A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR200N10P IXFR200N10P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr200n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 133A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 128 Stücke:
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1+23.17 EUR
30+20.94 EUR
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IXFR20N80P IXFR20N80P Littelfuse Inc. media?resourcetype=datasheets&itemid=B63DCDB6-3E62-405C-8F21-37A96C622526&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR20N80P-Datasheet.PDF Description: MOSFET N-CH 800V 11A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IXFR24N80P IXFR24N80P Littelfuse Inc. IXFR24N80P.pdf Description: MOSFET N-CH 800V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
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300+15.48 EUR
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IXFT120N15P IXFT120N15P Littelfuse Inc. Description: MOSFET N-CH 150V 120A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT24N80P IXFT24N80P Littelfuse Inc. Description: MOSFET N-CH 800V 24A TO268
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 650W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Produkt ist nicht verfügbar
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IXFT96N20P IXFT96N20P Littelfuse Inc. Description: MOSFET N-CH 200V 96A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 295 Stücke:
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1+23.09 EUR
30+13.92 EUR
120+11.91 EUR
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IXFX120N25P IXFX120N25P Littelfuse Inc. littelfuse-discrete-mosfets-ixf-120n25p-datasheet?assetguid=a464a398-635f-40e1-992a-af0242b5d3fc Description: MOSFET N-CH 250V 120A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 1110 Stücke:
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1+21.99 EUR
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IXFX180N15P IXFX180N15P Littelfuse Inc. Description: MOSFET N-CH 150V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
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IXFX32N80P IXFX32N80P Littelfuse Inc. Description: MOSFET N-CH 800V 32A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA160N075T IXTA160N075T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
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IXTA160N075T7 IXTA160N075T7 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n075t7_datasheet.pdf.pdf Description: MOSFET N-CH 75V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA160N10T IXTA160N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1300 Stücke:
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300+5.02 EUR
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IXTA160N10T7 IXTA160N10T7 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n10t7_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7 (IXTA)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA36N30P IXTA36N30P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0 Description: MOSFET N-CH 300V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 910 Stücke:
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3+10.28 EUR
50+5.41 EUR
100+5.12 EUR
500+4.8 EUR
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IXTA60N10T IXTA60N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 60A TO263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2055 Stücke:
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4+5.89 EUR
50+3.2 EUR
100+2.93 EUR
500+2.43 EUR
1000+2.3 EUR
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IXTA75N10P IXTA75N10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-75n10p-datasheet?assetguid=6da6cdac-0351-4899-85f4-6f0fd42262a3 Description: MOSFET N-CH 100V 75A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.31 EUR
50+5.81 EUR
100+5.36 EUR
500+4.8 EUR
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IXTB30N100L IXTB30N100L Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixtb30n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 30A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH12N100L IXTH12N100L Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH160N10T IXTH160N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.34 EUR
30+9.5 EUR
120+8 EUR
510+7.06 EUR
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IXTH6N120 IXTH6N120 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30 Stücke
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IXTH88N30P IXTH88N30P Littelfuse Inc. a Description: MOSFET N-CH 300V 88A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH96N20P IXTH96N20P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-96n20p-datasheet?assetguid=f01cf09b-9474-4d8a-b705-45c8df47cc7e Description: MOSFET N-CH 200V 96A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.18 EUR
30+13.21 EUR
120+11.67 EUR
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IXTK100N25P IXTK100N25P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK102N30P IXTK102N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixtk102n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 102A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.19 EUR
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IXTK120N25P IXTK120N25P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK120N25P-Datasheet.PDF?assetguid=EAA52095-EEBE-4AEB-9ABA-160258F95F30 Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 115 Stücke:
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1+30.12 EUR
25+19.83 EUR
100+18.77 EUR
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IXTK180N15P IXTK180N15P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK180N15P-Datasheet.PDF?assetguid=ECFB4FE7-33F8-4AF9-93F9-31850A67F019 Description: MOSFET N-CH 150V 180A TO264
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.63 EUR
25+21.06 EUR
100+18.17 EUR
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IXTK46N50L IXTK46N50L Littelfuse Inc. 38fac45f75894f078db00809a75465c2.pdf Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
1+65.51 EUR
25+56.98 EUR
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IXTK82N25P IXTK82N25P Littelfuse Inc. a Description: MOSFET N-CH 250V 82A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.56 EUR
25+13.46 EUR
100+11.75 EUR
500+11.32 EUR
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IXTK88N30P IXTK88N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTN46N50L IXTN46N50L Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixtn46n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 46A SOT-227B
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
auf Bestellung 16 Stücke:
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1+84.32 EUR
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IXTP06N120P IXTP06N120P Littelfuse Inc. IXTP06N120P%2CIXTA06N120P.pdf Description: MOSFET N-CH 1200V 600MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP160N10T IXTP160N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1853 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.92 EUR
50+5.6 EUR
100+5.16 EUR
500+4.53 EUR
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IXTP1N120P IXTP1N120P Littelfuse Inc. IXTA1N120P%2C%20IXTP1N120P.pdf Description: MOSFET N-CH 1200V 1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTP3N100P IXTP3N100P Littelfuse Inc. IXT%28A%2CH%2CP%293N100P.pdf Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.42 EUR
50+5.3 EUR
100+4.88 EUR
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IXTP98N075T IXTP98N075T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_98n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 98A TO220AB
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 230W (Tc)
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ100N25P IXTQ100N25P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.82 EUR
30+13.04 EUR
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IXTQ140N10P IXTQ140N10P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_140n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 140A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 840 Stücke:
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300+9.16 EUR
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IXTQ150N15P IXTQ150N15P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_150n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 150A TO3P
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
auf Bestellung 429 Stücke:
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IXTQ160N10T IXTQ160N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ52N30P IXTQ52N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
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IXTQ62N15P IXTQ62N15P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 62A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ69N30P IXTQ69N30P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-69N30P-Datasheet.PDF?assetguid=A735FD32-1DE5-4F51-B8E1-D7C2EEC3366B Description: MOSFET N-CH 300V 69A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 291 Stücke:
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IXTQ74N20P IXTQ74N20P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 74A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ75N10P IXTQ75N10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-75n10p-datasheet?assetguid=6da6cdac-0351-4899-85f4-6f0fd42262a3 Description: MOSFET N-CH 100V 75A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT100N25P IXTT100N25P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT120N15P IXTT120N15P Littelfuse Inc. a Description: MOSFET N-CH 150V 120A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 298 Stücke:
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IXTT170N10P IXTT170N10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-170n10p-datasheet?assetguid=175ebd9e-7358-496e-8ac0-7b03e2fb1949 Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
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IXTT6N120 IXTT6N120 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 542 Stücke:
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IXTT82N25P IXTT82N25P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 82A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 540 Stücke:
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IXTT88N30P IXTT88N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 421 Stücke:
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IXTX46N50L IXTX46N50L Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 46A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 686 Stücke:
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IXTY44N10T IXTY44N10T Littelfuse Inc. media?resourcetype=datasheets&itemid=6F632209-E987-45D8-BD19-71A9B1E1ECDC&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-44N10T-Datasheet.PDF Description: MOSFET N-CH 100V 44A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
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302JH1K 302JH1K Littelfuse Inc. littelfuse-leaded-thermistors-do-41-standard-datasheet?assetguid=935970ed-6a38-4fed-8ad5-e4314d7ea00e Description: THERMISTOR NTC 3KOHM 3892K DO41
Packaging: Bulk
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 300°C
B0/50: 3892K
Resistance in Ohms @ 25°C: 3k
Resistance Tolerance: ±10%
Length - Lead Wire: 1.00" (25.40mm)
Part Status: Active
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25+1 EUR
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MDSM-10R-20-25 MDSM-10R-20-25 Littelfuse Inc. littelfuse_reed_switches_mdsm_10_datasheet.pdf?assetguid=81930043-6d99-4270-8651-5f4595175a1d Description: SWITCH REED SPST-NO 350MA 140V
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Circuit: SPST-NO
Type: Glass Body Reed
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Length - Overall: 0.615" (15.62mm)
Power - Rated: 10W
Height Above Board: 0.079" (2.00mm)
Current - Switching: 350mA (AC), 500mA (DC)
Voltage - Switching DC: 200 V
Operate Time: 0.5 ms
Release Time: 0.1 ms
Size - Body: 0.071" Dia x 0.400" L (1.80mm x 10.16mm)
Operate Range: 20 ~ 25AT
Current - Carry: 1A (DC)
Voltage - Switching AC: 140 V
Part Status: Active
Capacitance: 0.2 pF
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IXFL82N60P
IXFL82N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 55A ISOPLUS264
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS264™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXFN102N30P IXFN102N30P.pdf
IXFN102N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 270 Stücke:
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1+39.1 EUR
10+34.84 EUR
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IXFN340N07 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn340n07_datasheet.pdf.pdf
IXFN340N07
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 70V 340A SOT-227B
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 490 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Produkt ist nicht verfügbar
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IXFN55N50 description media?resourcetype=datasheets&itemid=7f724954-c5b4-4c7e-b19d-87773ab9b1fe&filename=littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_55n50_datasheet.pdf
IXFN55N50
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 55A SOT-227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Part Status: Obsolete
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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IXFR102N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr102n30p_datasheet.pdf.pdf
IXFR102N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 60A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 540 Stücke:
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300+23.78 EUR
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IXFR180N15P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n15p_datasheet.pdf.pdf
IXFR180N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 100A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR200N10P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr200n10p_datasheet.pdf.pdf
IXFR200N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 133A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
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IXFR20N80P media?resourcetype=datasheets&itemid=B63DCDB6-3E62-405C-8F21-37A96C622526&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR20N80P-Datasheet.PDF
IXFR20N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 11A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IXFR24N80P IXFR24N80P.pdf
IXFR24N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
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IXFT120N15P
IXFT120N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 120A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
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IXFT24N80P
IXFT24N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 24A TO268
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 650W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Produkt ist nicht verfügbar
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IXFT96N20P
IXFT96N20P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 96A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 295 Stücke:
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120+11.91 EUR
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IXFX120N25P littelfuse-discrete-mosfets-ixf-120n25p-datasheet?assetguid=a464a398-635f-40e1-992a-af0242b5d3fc
IXFX120N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 120A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 1110 Stücke:
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1+21.99 EUR
30+18.84 EUR
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IXFX180N15P
IXFX180N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 5 Stücke:
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IXFX32N80P
IXFX32N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 32A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA160N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n075t_datasheet.pdf.pdf
IXTA160N075T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
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IXTA160N075T7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n075t7_datasheet.pdf.pdf
IXTA160N075T7
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n10t_datasheet.pdf.pdf
IXTA160N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 160A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1300 Stücke:
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AnzahlPrivatkunde
300+5.02 EUR
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IXTA160N10T7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n10t7_datasheet.pdf.pdf
IXTA160N10T7
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 160A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7 (IXTA)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA36N30P littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0
IXTA36N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 910 Stücke:
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3+10.28 EUR
50+5.41 EUR
100+5.12 EUR
500+4.8 EUR
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IXTA60N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf
IXTA60N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 60A TO263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2055 Stücke:
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4+5.89 EUR
50+3.2 EUR
100+2.93 EUR
500+2.43 EUR
1000+2.3 EUR
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IXTA75N10P littelfuse-discrete-mosfets-ixt-75n10p-datasheet?assetguid=6da6cdac-0351-4899-85f4-6f0fd42262a3
IXTA75N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 75A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
auf Bestellung 844 Stücke:
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3+10.31 EUR
50+5.81 EUR
100+5.36 EUR
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IXTB30N100L littelfuse_discrete_mosfets_n-channel_linear_ixtb30n100l_datasheet.pdf.pdf
IXTB30N100L
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 30A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH12N100L littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf
IXTH12N100L
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTH160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
IXTH160N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1308 Stücke:
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AnzahlPrivatkunde
2+16.34 EUR
30+9.5 EUR
120+8 EUR
510+7.06 EUR
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IXTH6N120 littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf
IXTH6N120
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 6A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH88N30P a
IXTH88N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH96N20P littelfuse-discrete-mosfets-ixt-96n20p-datasheet?assetguid=f01cf09b-9474-4d8a-b705-45c8df47cc7e
IXTH96N20P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 96A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.18 EUR
30+13.21 EUR
120+11.67 EUR
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IXTK100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTK100N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK102N30P littelfuse_discrete_mosfets_n-channel_standard_ixtk102n30p_datasheet.pdf.pdf
IXTK102N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 102A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 36 Stücke:
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AnzahlPrivatkunde
1+28.19 EUR
25+18.59 EUR
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IXTK120N25P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK120N25P-Datasheet.PDF?assetguid=EAA52095-EEBE-4AEB-9ABA-160258F95F30
IXTK120N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 115 Stücke:
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1+30.12 EUR
25+19.83 EUR
100+18.77 EUR
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IXTK180N15P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK180N15P-Datasheet.PDF?assetguid=ECFB4FE7-33F8-4AF9-93F9-31850A67F019
IXTK180N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 180A TO264
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 500µA
auf Bestellung 399 Stücke:
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1+31.63 EUR
25+21.06 EUR
100+18.17 EUR
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IXTK46N50L 38fac45f75894f078db00809a75465c2.pdf
IXTK46N50L
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 695 Stücke:
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AnzahlPrivatkunde
1+65.51 EUR
25+56.98 EUR
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IXTK82N25P a
IXTK82N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 82A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.56 EUR
25+13.46 EUR
100+11.75 EUR
500+11.32 EUR
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IXTK88N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf
IXTK88N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN46N50L littelfuse_discrete_mosfets_n-channel_linear_ixtn46n50l_datasheet.pdf.pdf
IXTN46N50L
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 46A SOT-227B
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
auf Bestellung 16 Stücke:
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AnzahlPrivatkunde
1+84.32 EUR
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IXTP06N120P IXTP06N120P%2CIXTA06N120P.pdf
IXTP06N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 600MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n10t_datasheet.pdf.pdf
IXTP160N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 160A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.92 EUR
50+5.6 EUR
100+5.16 EUR
500+4.53 EUR
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IXTP1N120P IXTA1N120P%2C%20IXTP1N120P.pdf
IXTP1N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP3N100P IXT%28A%2CH%2CP%293N100P.pdf
IXTP3N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 263 Stücke:
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AnzahlPrivatkunde
3+9.42 EUR
50+5.3 EUR
100+4.88 EUR
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IXTP98N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_98n075t_datasheet.pdf.pdf
IXTP98N075T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 98A TO220AB
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 230W (Tc)
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTQ100N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.82 EUR
30+13.04 EUR
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IXTQ140N10P littelfuse_discrete_mosfets_n-channel_standard_ixt_140n10p_datasheet.pdf.pdf
IXTQ140N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 140A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
300+9.16 EUR
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IXTQ150N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_150n15p_datasheet.pdf.pdf
IXTQ150N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 150A TO3P
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.96 EUR
30+13.66 EUR
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IXTQ160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
IXTQ160N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 160A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ52N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf
IXTQ52N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 52A TO3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Produkt ist nicht verfügbar
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IXTQ62N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf
IXTQ62N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 62A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ69N30P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-69N30P-Datasheet.PDF?assetguid=A735FD32-1DE5-4F51-B8E1-D7C2EEC3366B
IXTQ69N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 69A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.92 EUR
30+12.5 EUR
120+11.72 EUR
Mindestbestellmenge: 2 Stücke
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IXTQ74N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf
IXTQ74N20P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 74A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ75N10P littelfuse-discrete-mosfets-ixt-75n10p-datasheet?assetguid=6da6cdac-0351-4899-85f4-6f0fd42262a3
IXTQ75N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 75A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTT100N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT120N15P a
IXTT120N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 120A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.85 EUR
30+14.85 EUR
120+12.7 EUR
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IXTT170N10P littelfuse-discrete-mosfets-ixt-170n10p-datasheet?assetguid=175ebd9e-7358-496e-8ac0-7b03e2fb1949
IXTT170N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
auf Bestellung 281 Stücke:
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AnzahlPrivatkunde
1+27.48 EUR
30+16.71 EUR
120+14.35 EUR
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IXTT6N120 littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf
IXTT6N120
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 6A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.34 EUR
30+13.68 EUR
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IXTT82N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf
IXTT82N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 82A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.06 EUR
30+12.73 EUR
120+11.32 EUR
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IXTT88N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf
IXTT88N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.71 EUR
30+18.2 EUR
120+15.66 EUR
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IXTX46N50L littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf
IXTX46N50L
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 46A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+80.94 EUR
30+62.28 EUR
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IXTY44N10T media?resourcetype=datasheets&itemid=6F632209-E987-45D8-BD19-71A9B1E1ECDC&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-44N10T-Datasheet.PDF
IXTY44N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 44A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
auf Bestellung 3448 Stücke:
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AnzahlPrivatkunde
4+5.49 EUR
70+2.83 EUR
140+2.59 EUR
560+2.21 EUR
1050+2.09 EUR
Mindestbestellmenge: 4 Stücke
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302JH1K littelfuse-leaded-thermistors-do-41-standard-datasheet?assetguid=935970ed-6a38-4fed-8ad5-e4314d7ea00e
302JH1K
Hersteller: Littelfuse Inc.
Description: THERMISTOR NTC 3KOHM 3892K DO41
Packaging: Bulk
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 300°C
B0/50: 3892K
Resistance in Ohms @ 25°C: 3k
Resistance Tolerance: ±10%
Length - Lead Wire: 1.00" (25.40mm)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
19+1.13 EUR
20+1.07 EUR
25+1 EUR
50+0.95 EUR
100+0.9 EUR
500+0.82 EUR
1000+0.79 EUR
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MDSM-10R-20-25 littelfuse_reed_switches_mdsm_10_datasheet.pdf?assetguid=81930043-6d99-4270-8651-5f4595175a1d
MDSM-10R-20-25
Hersteller: Littelfuse Inc.
Description: SWITCH REED SPST-NO 350MA 140V
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Circuit: SPST-NO
Type: Glass Body Reed
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Length - Overall: 0.615" (15.62mm)
Power - Rated: 10W
Height Above Board: 0.079" (2.00mm)
Current - Switching: 350mA (AC), 500mA (DC)
Voltage - Switching DC: 200 V
Operate Time: 0.5 ms
Release Time: 0.1 ms
Size - Body: 0.071" Dia x 0.400" L (1.80mm x 10.16mm)
Operate Range: 20 ~ 25AT
Current - Carry: 1A (DC)
Voltage - Switching AC: 140 V
Part Status: Active
Capacitance: 0.2 pF
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.46 EUR
6000+1.39 EUR
9000+1.37 EUR
Mindestbestellmenge: 3000 Stücke
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