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TVB075NSB-L TVB075NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 75V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 122pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 75V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB090NSB-L TVB090NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB120NSB-L TVB120NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 120V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB140NSB-L TVB140NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 140V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB170NSA-L TVB170NSA-L Littelfuse Inc. TVBxxxNSA-L.pdf Description: THYRISTOR 170V 150A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 39pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Produkt ist nicht verfügbar
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TVB170NSB-L TVB170NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 170V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB180NSB-L TVB180NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 180V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB190NSA-L TVB190NSA-L Littelfuse Inc. TVBxxxNSA-L.pdf Description: THYRISTOR 190V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 36pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Produkt ist nicht verfügbar
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TVB190NSB-L TVB190NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 190V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 56pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB220NSB-L TVB220NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 220V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB220NSC-L TVB220NSC-L Littelfuse Inc. TVBxxxNSC-L.pdf Description: THYRISTOR 220V 400A DO214AA
Produkt ist nicht verfügbar
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TVB275NSB-L TVB275NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 275V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB320NSB-L TVB320NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 320V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 44pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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IXFK26N100P IXFK26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFK32N100P IXFK32N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.21 EUR
25+25.3 EUR
100+23.76 EUR
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IXFL44N100P IXFL44N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl44n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN26N100P IXFN26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN32N100P IXFN32N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.41 EUR
10+43.44 EUR
100+38.97 EUR
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IXFN38N100P IXFN38N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
1+82.26 EUR
10+62.12 EUR
100+58.4 EUR
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IXFR26N100P IXFR26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT16N120P IXFT16N120P Littelfuse Inc. littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b Description: MOSFET N-CH 1200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.16 EUR
30+22.49 EUR
120+20.74 EUR
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IXFX26N100P IXFX26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX32N100P IXFX32N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 318 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.59 EUR
30+24.04 EUR
120+22.41 EUR
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IXTA08N120P IXTA08N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
50+5.13 EUR
100+4.4 EUR
500+3.91 EUR
1000+3.35 EUR
Mindestbestellmenge: 3
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IXTA3N100P IXTA3N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH3N100P IXTH3N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP08N100P IXTP08N100P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-08n100p-datasheet?assetguid=c03e6d51-d539-4f4a-ad31-08df60c8fd6a Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
50+2.36 EUR
100+2.24 EUR
Mindestbestellmenge: 5
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IXTP1R4N120P IXTP1R4N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.57 EUR
50+6.79 EUR
100+5.82 EUR
500+5.17 EUR
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IXTP2N100P IXTP2N100P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-2n100p-datasheet?assetguid=0764c9e3-39bd-48c9-b399-6b07cfcab121 Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
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IXTP90N15T IXTP90N15T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
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IXTY08N100P IXTY08N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
350+2.8 EUR
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IXTY2N100P IXTY2N100P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-2n100p-datasheet?assetguid=0764c9e3-39bd-48c9-b399-6b07cfcab121 Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.95 EUR
70+2.9 EUR
140+2.83 EUR
560+2.59 EUR
1050+2.43 EUR
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IXTA100N04T2 IXTA100N04T2 Littelfuse Inc. littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070 Description: MOSFET N-CH 40V 100A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA102N15T IXTA102N15T Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-102N15T-Datasheet.PDF?assetguid=239CF561-3070-4BC3-913C-311FFA82B091 Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.6 EUR
50+5.39 EUR
100+4.82 EUR
500+4.17 EUR
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IXTA110N055T2 IXTA110N055T2 Littelfuse Inc. littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA32P05T IXTA32P05T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
50+3.52 EUR
100+3.02 EUR
500+2.69 EUR
Mindestbestellmenge: 4
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IXTA52P10P IXTA52P10P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1203 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.04 EUR
50+6.54 EUR
100+6.01 EUR
500+5.16 EUR
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IXTA90N055T2 IXTA90N055T2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH10P50P IXTH10P50P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634 Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.43 EUR
30+8.56 EUR
120+7.25 EUR
Mindestbestellmenge: 2
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IXTH110N25T IXTH110N25T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.17 EUR
30+12.9 EUR
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IXTH16P60P IXTH16P60P Littelfuse Inc. media?resourcetype=datasheets&itemid=A77013E2-E6CF-4AB2-A85B-2F133B071255&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXT-16P60P-Datasheet.PDF Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.31 EUR
30+12.3 EUR
120+11.07 EUR
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IXTH20P50P IXTH20P50P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-20p50p-datasheet?assetguid=6ff80a54-b856-4dfe-ba92-32aae5a30f89 Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.15 EUR
30+12.64 EUR
120+11.03 EUR
510+10.7 EUR
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IXTH44P15T IXTH44P15T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.74 EUR
30+7.9 EUR
120+6.78 EUR
Mindestbestellmenge: 2
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IXTH76P10T IXTH76P10T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 3054 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
30+6.49 EUR
Mindestbestellmenge: 2
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IXTH90P10P IXTH90P10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-90p10p-datasheet?assetguid=611756b4-09a2-467d-8210-fa4410afc035 Description: MOSFET P-CH 100V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.26 EUR
30+13.46 EUR
120+11.54 EUR
510+11.13 EUR
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IXTK170P10P IXTK170P10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-170p10p-datasheet?assetguid=68622d8b-7303-4f51-80e6-161b6a15098f Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 1054 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.35 EUR
25+22.58 EUR
100+20.37 EUR
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IXTK32P60P IXTK32P60P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P60P-Datasheet.PDF?assetguid=4E3CC1EB-28DE-4BB7-B025-3DB667A4A4E2 Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.85 EUR
25+22.61 EUR
100+21.04 EUR
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IXTK40P50P IXTK40P50P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6 Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
1+34 EUR
25+22.58 EUR
100+20.37 EUR
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IXTN40P50P IXTN40P50P Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixtn40p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 67 Stücke:
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1+59.65 EUR
10+53 EUR
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IXTP100N04T2 IXTP100N04T2 Littelfuse Inc. littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070 Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
auf Bestellung 269 Stücke:
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50+2.4 EUR
100+2.27 EUR
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IXTP170N075T2 IXTP170N075T2 Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-170N075T2-Datasheet.PDF?assetguid=D747B10F-DF0D-4682-8263-928A35FB227A Description: MOSFET N-CH 75V 170A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.76 EUR
50+3.77 EUR
100+3.42 EUR
Mindestbestellmenge: 3
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IXTP18P10T IXTP18P10T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 3095 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.21 EUR
50+2.88 EUR
100+2.49 EUR
500+2.09 EUR
1000+1.8 EUR
2000+1.75 EUR
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IXTP44P15T IXTP44P15T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
50+6.6 EUR
100+6.05 EUR
500+5.23 EUR
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IXTP70N075T2 IXTP70N075T2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP76P10T IXTP76P10T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 8263 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.38 EUR
50+5.61 EUR
100+5.15 EUR
500+5.14 EUR
Mindestbestellmenge: 2
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IXTP90N075T2 IXTP90N075T2 Littelfuse Inc. IXT%28A%2CP%2990N075T2.pdf Description: MOSFET N-CH 75V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ10P50P IXTQ10P50P Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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IXTR170P10P IXTR170P10P Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixtr170p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.52 EUR
30+25.89 EUR
120+24.11 EUR
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IXTR20P50P IXTR20P50P Littelfuse Inc. media?resourcetype=datasheets&itemid=DAA3BA6C-C1EF-4896-9BC4-9E7B14CF2FF6&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXTR20P50P-Datasheet.PDF Description: MOSFET P-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Produkt ist nicht verfügbar
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IXTR32P60P IXTR32P60P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-P-Channel-IXTR32P60P-Datasheet.PDF?assetguid=7F3DD491-647A-4291-A895-57EBA408A15F Description: MOSFET P-CH 600V 18A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Produkt ist nicht verfügbar
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TVB075NSB-L TVBxxxNSB-L.pdf
TVB075NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 75V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 122pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 75V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB090NSB-L TVBxxxNSB-L.pdf
TVB090NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB120NSB-L TVBxxxNSB-L.pdf
TVB120NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 120V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB140NSB-L TVBxxxNSB-L.pdf
TVB140NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 140V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB170NSA-L TVBxxxNSA-L.pdf
TVB170NSA-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 170V 150A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 39pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Produkt ist nicht verfügbar
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TVB170NSB-L TVBxxxNSB-L.pdf
TVB170NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 170V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB180NSB-L TVBxxxNSB-L.pdf
TVB180NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 180V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB190NSA-L TVBxxxNSA-L.pdf
TVB190NSA-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 190V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 36pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Produkt ist nicht verfügbar
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TVB190NSB-L TVBxxxNSB-L.pdf
TVB190NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 190V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 56pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB220NSB-L TVBxxxNSB-L.pdf
TVB220NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 220V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB220NSC-L TVBxxxNSC-L.pdf
TVB220NSC-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 220V 400A DO214AA
Produkt ist nicht verfügbar
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TVB275NSB-L TVBxxxNSB-L.pdf
TVB275NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 275V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TVB320NSB-L TVBxxxNSB-L.pdf
TVB320NSB-L
Hersteller: Littelfuse Inc.
Description: THYRISTOR 320V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 44pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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IXFK26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf
IXFK26N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100P
IXFK32N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.21 EUR
25+25.3 EUR
100+23.76 EUR
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IXFL44N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl44n100p_datasheet.pdf.pdf
IXFL44N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 22A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n100p_datasheet.pdf.pdf
IXFN26N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100P
IXFN32N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.41 EUR
10+43.44 EUR
100+38.97 EUR
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IXFN38N100P
IXFN38N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+82.26 EUR
10+62.12 EUR
100+58.4 EUR
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IXFR26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n100p_datasheet.pdf.pdf
IXFR26N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT16N120P littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b
IXFT16N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.16 EUR
30+22.49 EUR
120+20.74 EUR
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IXFX26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf
IXFX26N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX32N100P
IXFX32N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.59 EUR
30+24.04 EUR
120+22.41 EUR
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IXTA08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTA08N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
50+5.13 EUR
100+4.4 EUR
500+3.91 EUR
1000+3.35 EUR
Mindestbestellmenge: 3
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IXTA3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTA3N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTH3N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP08N100P littelfuse-discrete-mosfets-ixt-08n100p-datasheet?assetguid=c03e6d51-d539-4f4a-ad31-08df60c8fd6a
IXTP08N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
50+2.36 EUR
100+2.24 EUR
Mindestbestellmenge: 5
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IXTP1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTP1R4N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.57 EUR
50+6.79 EUR
100+5.82 EUR
500+5.17 EUR
Mindestbestellmenge: 3
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IXTP2N100P littelfuse-discrete-mosfets-ixt-2n100p-datasheet?assetguid=0764c9e3-39bd-48c9-b399-6b07cfcab121
IXTP2N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
Mindestbestellmenge: 4
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IXTP90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTP90N15T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
Mindestbestellmenge: 2
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IXTY08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTY08N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
350+2.8 EUR
Mindestbestellmenge: 350
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IXTY2N100P littelfuse-discrete-mosfets-ixt-2n100p-datasheet?assetguid=0764c9e3-39bd-48c9-b399-6b07cfcab121
IXTY2N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
70+2.9 EUR
140+2.83 EUR
560+2.59 EUR
1050+2.43 EUR
Mindestbestellmenge: 3
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IXTA100N04T2 littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070
IXTA100N04T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA102N15T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-102N15T-Datasheet.PDF?assetguid=239CF561-3070-4BC3-913C-311FFA82B091
IXTA102N15T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 806 Stücke:
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Anzahl Preis
3+7.6 EUR
50+5.39 EUR
100+4.82 EUR
500+4.17 EUR
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IXTA110N055T2 littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a
IXTA110N055T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA32P05T littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf
IXTA32P05T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
50+3.52 EUR
100+3.02 EUR
500+2.69 EUR
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IXTA52P10P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B
IXTA52P10P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
50+6.54 EUR
100+6.01 EUR
500+5.16 EUR
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IXTA90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf.pdf
IXTA90N055T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH10P50P littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634
IXTH10P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.43 EUR
30+8.56 EUR
120+7.25 EUR
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IXTH110N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf
IXTH110N25T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.17 EUR
30+12.9 EUR
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IXTH16P60P media?resourcetype=datasheets&itemid=A77013E2-E6CF-4AB2-A85B-2F133B071255&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXT-16P60P-Datasheet.PDF
IXTH16P60P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.31 EUR
30+12.3 EUR
120+11.07 EUR
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IXTH20P50P littelfuse-discrete-mosfets-ixt-20p50p-datasheet?assetguid=6ff80a54-b856-4dfe-ba92-32aae5a30f89
IXTH20P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.15 EUR
30+12.64 EUR
120+11.03 EUR
510+10.7 EUR
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IXTH44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTH44P15T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.74 EUR
30+7.9 EUR
120+6.78 EUR
Mindestbestellmenge: 2
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IXTH76P10T littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf
IXTH76P10T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 3054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
30+6.49 EUR
Mindestbestellmenge: 2
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IXTH90P10P littelfuse-discrete-mosfets-ixt-90p10p-datasheet?assetguid=611756b4-09a2-467d-8210-fa4410afc035
IXTH90P10P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
30+13.46 EUR
120+11.54 EUR
510+11.13 EUR
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IXTK170P10P littelfuse-discrete-mosfets-ixt-170p10p-datasheet?assetguid=68622d8b-7303-4f51-80e6-161b6a15098f
IXTK170P10P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 1054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.35 EUR
25+22.58 EUR
100+20.37 EUR
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IXTK32P60P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P60P-Datasheet.PDF?assetguid=4E3CC1EB-28DE-4BB7-B025-3DB667A4A4E2
IXTK32P60P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.85 EUR
25+22.61 EUR
100+21.04 EUR
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IXTK40P50P littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6
IXTK40P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34 EUR
25+22.58 EUR
100+20.37 EUR
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IXTN40P50P littelfuse_discrete_mosfets_p-channel_ixtn40p50p_datasheet.pdf.pdf
IXTN40P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.65 EUR
10+53 EUR
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IXTP100N04T2 littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070
IXTP100N04T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
50+2.4 EUR
100+2.27 EUR
Mindestbestellmenge: 4
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IXTP170N075T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-170N075T2-Datasheet.PDF?assetguid=D747B10F-DF0D-4682-8263-928A35FB227A
IXTP170N075T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 170A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
50+3.77 EUR
100+3.42 EUR
Mindestbestellmenge: 3
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IXTP18P10T littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682
IXTP18P10T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 3095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
50+2.88 EUR
100+2.49 EUR
500+2.09 EUR
1000+1.8 EUR
2000+1.75 EUR
Mindestbestellmenge: 4
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IXTP44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTP44P15T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
50+6.6 EUR
100+6.05 EUR
500+5.23 EUR
Mindestbestellmenge: 2
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IXTP70N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf
IXTP70N075T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP76P10T littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
IXTP76P10T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 8263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.38 EUR
50+5.61 EUR
100+5.15 EUR
500+5.14 EUR
Mindestbestellmenge: 2
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IXTP90N075T2 IXT%28A%2CP%2990N075T2.pdf
IXTP90N075T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 75V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ10P50P littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf
IXTQ10P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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IXTR170P10P littelfuse_discrete_mosfets_p-channel_ixtr170p10p_datasheet.pdf.pdf
IXTR170P10P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.52 EUR
30+25.89 EUR
120+24.11 EUR
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IXTR20P50P media?resourcetype=datasheets&itemid=DAA3BA6C-C1EF-4896-9BC4-9E7B14CF2FF6&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXTR20P50P-Datasheet.PDF
IXTR20P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Produkt ist nicht verfügbar
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IXTR32P60P Littelfuse-Discrete-MOSFETs-P-Channel-IXTR32P60P-Datasheet.PDF?assetguid=7F3DD491-647A-4291-A895-57EBA408A15F
IXTR32P60P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 600V 18A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Produkt ist nicht verfügbar
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