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MCACD033N10YL-TP MCACD033N10YL-TP MCC (Micro Commercial Components) MCACD033N10YL(PDFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
auf Bestellung 5000 Stücke:
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5000+0.54 EUR
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MCACD033N10YL-TP MCACD033N10YL-TP MCC (Micro Commercial Components) MCACD033N10YL(PDFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
auf Bestellung 9870 Stücke:
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8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
2000+0.6 EUR
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RB521S-40-T3P RB521S-40-T3P MCC (Micro Commercial Components) Description: DIODE SCHOTTKY 40V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
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15KP51AL-TP 15KP51AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 51VWM 82.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE39CA-AP P4KE39CA-AP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-BP P4KE39CA-BP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-TP P4KE39CA-TP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJP4KE39CA-TP SMAJP4KE39CA-TP MCC (Micro Commercial Components) SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJP4KE39CAHE3-TP SMAJP4KE39CAHE3-TP MCC (Micro Commercial Components) SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJP4KE39CAQ-TP SMAJP4KE39CAQ-TP MCC (Micro Commercial Components) SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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15KP100AL-TP 15KP100AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 100VWM 162VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MT5016W-BP MT5016W-BP MCC (Micro Commercial Components) MT5010W_MT5016W(MT-W).pdf Description: BRIDGE RECT 3P 1.6KV 50A MT-W
Packaging: Bulk
Package / Case: 5-Square, MT-W
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-W
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 kV
auf Bestellung 340 Stücke:
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2+16.72 EUR
50+9.31 EUR
100+8.59 EUR
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5KP28CA-TP 5KP28CA-TP MCC (Micro Commercial Components) 5KP5.0(C)_5KP440(C)A(R-6).pdf Description: TVS DIODE 28VWM 45.4VC R6
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 110A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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15KP28CAL-TP 15KP28CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 28VWM 47.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SICW025N065H-BP SICW025N065H-BP MCC (Micro Commercial Components) SICW025N065H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
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1+19.76 EUR
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SICW025N065H4-BP SICW025N065H4-BP MCC (Micro Commercial Components) SICW025N065H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
auf Bestellung 357 Stücke:
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1+19.92 EUR
10+13.94 EUR
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MCAC7D0N04L-TP MCAC7D0N04L-TP MCC (Micro Commercial Components) MCAC7D0N04L(DFN5060).pdf Description: MOSFET N-CH 40 75A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Produkt ist nicht verfügbar
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MCAC7D0N04L-TP MCAC7D0N04L-TP MCC (Micro Commercial Components) MCAC7D0N04L(DFN5060).pdf Description: MOSFET N-CH 40 75A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 4988 Stücke:
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15+1.18 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2000+0.29 EUR
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MCAC88N04Y-TP MCAC88N04Y-TP MCC (Micro Commercial Components) MCAC88N04Y(DFN5060).pdf Description: MOSFET N-CH 40 88A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 861 pF @ 25 V
Produkt ist nicht verfügbar
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MCAC88N04Y-TP MCAC88N04Y-TP MCC (Micro Commercial Components) MCAC88N04Y(DFN5060).pdf Description: MOSFET N-CH 40 88A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 861 pF @ 25 V
auf Bestellung 4986 Stücke:
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11+1.6 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.41 EUR
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MCAC25N10YHE3-TP MCAC25N10YHE3-TP MCC (Micro Commercial Components) MCAC25N10YHE3(DFN5060).pdf Description: MOSFET N-CH 100 25A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCAC25N10YHE3-TP MCAC25N10YHE3-TP MCC (Micro Commercial Components) MCAC25N10YHE3(DFN5060).pdf Description: MOSFET N-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
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8+2.22 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.67 EUR
2000+0.63 EUR
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SICW120N120H-BP SICW120N120H-BP MCC (Micro Commercial Components) SICW120N120H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
Produkt ist nicht verfügbar
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SICW120N120H4-BP SICW120N120H4-BP MCC (Micro Commercial Components) SICW120N120H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
Produkt ist nicht verfügbar
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TBSA30M-TP TBSA30M-TP MCC (Micro Commercial Components) TBSA30M(TBSG).pdf Description: BRIDGE RECT 1PHASE 1KV 3A TBSG
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TBSA30M-TP TBSA30M-TP MCC (Micro Commercial Components) TBSA30M(TBSG).pdf Description: BRIDGE RECT 1PHASE 1KV 3A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SMAJ4751AQ-TP SMAJ4751AQ-TP MCC (Micro Commercial Components) SMAJ4735AQ_SMAJ4764AQ(SMA).pdf Description: DIODE ZENER 30V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMAJ4751AQ-TP SMAJ4751AQ-TP MCC (Micro Commercial Components) SMAJ4735AQ_SMAJ4764AQ(SMA).pdf Description: DIODE ZENER 30V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MCU011N10YL-TP MCU011N10YL-TP MCC (Micro Commercial Components) MCU011N10YL(DPAK).pdf Description: POWER MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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MCU011N10YL-TP MCU011N10YL-TP MCC (Micro Commercial Components) MCU011N10YL(DPAK).pdf Description: POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
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SI2307K-TP SI2307K-TP MCC (Micro Commercial Components) SI2307K(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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SI2307K-TP SI2307K-TP MCC (Micro Commercial Components) SI2307K(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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MBRBFL30100CT-TP MBRBFL30100CT-TP MCC (Micro Commercial Components) MBRBFL30100CT(TO-263AC).pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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MBRBFL30100CT-TP MBRBFL30100CT-TP MCC (Micro Commercial Components) MBRBFL30100CT(TO-263AC).pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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GBU4J-BP-HF GBU4J-BP-HF MCC (Micro Commercial Components) Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
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MC6331-3.3-TP MC6331-3.3-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LIN 3.3V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.16V @ 100mA
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Bulk
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MC6331-5.0-TP MC6331-5.0-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LINEAR 5V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Bulk
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MC6331-2.8-TP MC6331-2.8-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LIN 2.8V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Package / Case: SC-74A, SOT-753
Packaging: Bulk
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SICW030N120H-BP SICW030N120H-BP MCC (Micro Commercial Components) SICW030N120H(TO-247AB).pdf Description: SIC MOSFETS,TO-247AB
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247AB
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Power Dissipation (Max): 375W (Tc)
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SICW030N120H4-BP SICW030N120H4-BP MCC (Micro Commercial Components) SICW030N120H4(TO-247-4).pdf Description: SIC MOSFETS,TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Technology: SiCFET (Silicon Carbide)
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SKBPC3516-BP SKBPC3516-BP MCC (Micro Commercial Components) SKBPC3516(SKBPC).pdf Description: BRIDGE RECT 1P 1.6KV 35A SKBPC
Packaging: Bulk
Package / Case: 5-Square, SKBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SKBPC
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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ESD15VLHE3-TP ESD15VLHE3-TP MCC (Micro Commercial Components) ESD15VLHE3(DFN1006-2L).pdf Description: TVS DIODE 15VWM 35VC DFN10062L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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UMH13NHE3-TP UMH13NHE3-TP MCC (Micro Commercial Components) UMH13NHE3(SOT-363).pdf Description: TRANS PREBIAS 2NPN 50V SOT-363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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UMH13NHE3-TP UMH13NHE3-TP MCC (Micro Commercial Components) UMH13NHE3(SOT-363).pdf Description: TRANS PREBIAS 2NPN 50V SOT-363
Supplier Device Package: SOT-363
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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FR3MBFL-TP FR3MBFL-TP MCC (Micro Commercial Components) FR3GBFL~FR3MBFL(SMBF).pdf Description: DIODE STANDARD 1000V 3A SMBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Bulk
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FR3MB-TP FR3MB-TP MCC (Micro Commercial Components) FR3AB-FR3MB(SMB).pdf Description: DIODE STANDARD 1000V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
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FR3M-TP FR3M-TP MCC (Micro Commercial Components) FR3A-FR3M(SMC).pdf Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
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MCG120N10L-TP MCG120N10L-TP MCC (Micro Commercial Components) MCG120N10L(PDFN3333).pdf Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 50 V
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SKBPC7516-BP SKBPC7516-BP MCC (Micro Commercial Components) SKBPC7510_SKBPC7516(SKBPC75).pdf Description: BRIDGE RECT 3P 1.6KV 75A SKBPC75
Packaging: Bulk
Package / Case: 5-Square, SKBPC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SKBPC75
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 37.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
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MBRL30200FCT-BP MBRL30200FCT-BP MCC (Micro Commercial Components) MBRL30200FCT(ITO-220AB).pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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15KP75AL-TP 15KP75AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 75VWM 122VC R6
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 122V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 123A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
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MURS560A-BP MURS560A-BP MCC (Micro Commercial Components) MURS560A(TO-220AC).pdf Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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MURS560FA-BP MURS560FA-BP MCC (Micro Commercial Components) MURS560FA(ITO-220AC).pdf Description: DIODE STANDARD 600V 5A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Bulk
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SMAJ400A-TP SMAJ400A-TP MCC (Micro Commercial Components) SMAJ5.0A-SMAJ440CA(SMA).pdf Description: TVS DIODE 400VWM 648VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 600mA
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 447V
Voltage - Clamping (Max) @ Ipp: 648V
Power - Peak Pulse: 400W
Power Line Protection: No
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MCU50P04A-TP MCU50P04A-TP MCC (Micro Commercial Components) MCU50P04A(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
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MCU50P04AHE3-TP MCU50P04AHE3-TP MCC (Micro Commercial Components) MCU50P04AHE3(DPAK).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
Qualification: AEC-Q101
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MCACD20N10Y-TP MCACD20N10Y-TP MCC (Micro Commercial Components) MCACD20N10Y(DFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8D
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MCACD20N10YHE3-TP MCACD20N10YHE3-TP MCC (Micro Commercial Components) MCACD20N10YHE3(PDFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ43CAQ-TP SMCJ43CAQ-TP MCC (Micro Commercial Components) SMCJ5.0AQ_SMCJ190CAQ(SMC).pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KP60CAL-TP 5KP60CAL-TP MCC (Micro Commercial Components) 5KP22(C)AL_5KP188(C)AL(R-6).pdf Description: TVS DIODE 60VWM 97VC R6
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 97V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 51.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCACD033N10YL-TP MCACD033N10YL(PDFN5060-8D).pdf
MCACD033N10YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
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AnzahlPreis
5000+0.54 EUR
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MCACD033N10YL-TP MCACD033N10YL(PDFN5060-8D).pdf
MCACD033N10YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
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AnzahlPreis
8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
2000+0.6 EUR
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RB521S-40-T3P
RB521S-40-T3P
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Produkt ist nicht verfügbar
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15KP51AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP51AL-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 51VWM 82.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE39CA-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-AP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE39CA-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-BP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4KE39CA-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJP4KE39CA-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE39CA-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJP4KE39CAHE3-TP SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf
SMAJP4KE39CAHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJP4KE39CAQ-TP SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf
SMAJP4KE39CAQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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15KP100AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP100AL-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 100VWM 162VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MT5016W-BP MT5010W_MT5016W(MT-W).pdf
MT5016W-BP
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 3P 1.6KV 50A MT-W
Packaging: Bulk
Package / Case: 5-Square, MT-W
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-W
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 kV
auf Bestellung 340 Stücke:
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AnzahlPreis
2+16.72 EUR
50+9.31 EUR
100+8.59 EUR
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5KP28CA-TP 5KP5.0(C)_5KP440(C)A(R-6).pdf
5KP28CA-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 28VWM 45.4VC R6
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 110A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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15KP28CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP28CAL-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 28VWM 47.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SICW025N065H-BP SICW025N065H(TO-247AB).pdf
SICW025N065H-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
auf Bestellung 325 Stücke:
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AnzahlPreis
1+19.76 EUR
10+13.83 EUR
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SICW025N065H4-BP SICW025N065H4(TO-247-4).pdf
SICW025N065H4-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
auf Bestellung 357 Stücke:
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AnzahlPreis
1+19.92 EUR
10+13.94 EUR
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MCAC7D0N04L-TP MCAC7D0N04L(DFN5060).pdf
MCAC7D0N04L-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 75A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Produkt ist nicht verfügbar
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MCAC7D0N04L-TP MCAC7D0N04L(DFN5060).pdf
MCAC7D0N04L-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 75A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 4988 Stücke:
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AnzahlPreis
15+1.18 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2000+0.29 EUR
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MCAC88N04Y-TP MCAC88N04Y(DFN5060).pdf
MCAC88N04Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 88A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 861 pF @ 25 V
Produkt ist nicht verfügbar
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MCAC88N04Y-TP MCAC88N04Y(DFN5060).pdf
MCAC88N04Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 88A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 861 pF @ 25 V
auf Bestellung 4986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.6 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.41 EUR
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MCAC25N10YHE3-TP MCAC25N10YHE3(DFN5060).pdf
MCAC25N10YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 25A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCAC25N10YHE3-TP MCAC25N10YHE3(DFN5060).pdf
MCAC25N10YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.22 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.67 EUR
2000+0.63 EUR
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SICW120N120H-BP SICW120N120H(TO-247AB).pdf
SICW120N120H-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
Produkt ist nicht verfügbar
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SICW120N120H4-BP SICW120N120H4(TO-247-4).pdf
SICW120N120H4-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
Produkt ist nicht verfügbar
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TBSA30M-TP TBSA30M(TBSG).pdf
TBSA30M-TP
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 3A TBSG
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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TBSA30M-TP TBSA30M(TBSG).pdf
TBSA30M-TP
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 3A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1 EUR
29+0.62 EUR
100+0.4 EUR
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SMAJ4751AQ-TP SMAJ4735AQ_SMAJ4764AQ(SMA).pdf
SMAJ4751AQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 30V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7500+0.16 EUR
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SMAJ4751AQ-TP SMAJ4735AQ_SMAJ4764AQ(SMA).pdf
SMAJ4751AQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 30V 1W DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Power - Max: 1 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.77 EUR
31+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
2000+0.23 EUR
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MCU011N10YL-TP MCU011N10YL(DPAK).pdf
MCU011N10YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: POWER MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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MCU011N10YL-TP MCU011N10YL(DPAK).pdf
MCU011N10YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
auf Bestellung 2438 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.13 EUR
14+1.35 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
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SI2307K-TP SI2307K(SOT-23).pdf
SI2307K-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.1 EUR
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SI2307K-TP SI2307K(SOT-23).pdf
SI2307K-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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MBRBFL30100CT-TP MBRBFL30100CT(TO-263AC).pdf
MBRBFL30100CT-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+1.76 EUR
3000+1.69 EUR
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MBRBFL30100CT-TP MBRBFL30100CT(TO-263AC).pdf
MBRBFL30100CT-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.45 EUR
10+2.77 EUR
100+2.22 EUR
500+1.89 EUR
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GBU4J-BP-HF
GBU4J-BP-HF
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Produkt ist nicht verfügbar
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MC6331-3.3-TP MC6331(SOT23-5L).pdf
MC6331-3.3-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC REG LIN 3.3V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.16V @ 100mA
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Produkt ist nicht verfügbar
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MC6331-5.0-TP MC6331(SOT23-5L).pdf
MC6331-5.0-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC REG LINEAR 5V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Produkt ist nicht verfügbar
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MC6331-2.8-TP MC6331(SOT23-5L).pdf
MC6331-2.8-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC REG LIN 2.8V 300MA SOT23-5L
Protection Features: Over Current, Over Temperature, Short Circuit
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-23-5L
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Produkt ist nicht verfügbar
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SICW030N120H-BP SICW030N120H(TO-247AB).pdf
SICW030N120H-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247AB
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar
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SICW030N120H4-BP SICW030N120H4(TO-247-4).pdf
SICW030N120H4-BP
Hersteller: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Technology: SiCFET (Silicon Carbide)
Produkt ist nicht verfügbar
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SKBPC3516-BP SKBPC3516(SKBPC).pdf
SKBPC3516-BP
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1P 1.6KV 35A SKBPC
Packaging: Bulk
Package / Case: 5-Square, SKBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SKBPC
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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AnzahlPreis
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ESD15VLHE3-TP ESD15VLHE3(DFN1006-2L).pdf
ESD15VLHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 15VWM 35VC DFN10062L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMH13NHE3-TP UMH13NHE3(SOT-363).pdf
UMH13NHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PREBIAS 2NPN 50V SOT-363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+0.15 EUR
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UMH13NHE3-TP UMH13NHE3(SOT-363).pdf
UMH13NHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PREBIAS 2NPN 50V SOT-363
Supplier Device Package: SOT-363
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.72 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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FR3MBFL-TP FR3GBFL~FR3MBFL(SMBF).pdf
FR3MBFL-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 3A SMBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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FR3MB-TP FR3AB-FR3MB(SMB).pdf
FR3MB-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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FR3M-TP FR3A-FR3M(SMC).pdf
FR3M-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MCG120N10L-TP MCG120N10L(PDFN3333).pdf
MCG120N10L-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 50 V
Produkt ist nicht verfügbar
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SKBPC7516-BP SKBPC7510_SKBPC7516(SKBPC75).pdf
SKBPC7516-BP
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 3P 1.6KV 75A SKBPC75
Packaging: Bulk
Package / Case: 5-Square, SKBPC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SKBPC75
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 37.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
auf Bestellung 590 Stücke:
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AnzahlPreis
2+14.5 EUR
50+8.02 EUR
100+7.39 EUR
500+6.6 EUR
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MBRL30200FCT-BP MBRL30200FCT(ITO-220AB).pdf
MBRL30200FCT-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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15KP75AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP75AL-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 75VWM 122VC R6
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 122V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 123A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS560A-BP MURS560A(TO-220AC).pdf
MURS560A-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Produkt ist nicht verfügbar
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MURS560FA-BP MURS560FA(ITO-220AC).pdf
MURS560FA-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 5A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Bulk
Produkt ist nicht verfügbar
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SMAJ400A-TP SMAJ5.0A-SMAJ440CA(SMA).pdf
SMAJ400A-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 400VWM 648VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 600mA
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 447V
Voltage - Clamping (Max) @ Ipp: 648V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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MCU50P04A-TP MCU50P04A(DPAK).pdf
MCU50P04A-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
Produkt ist nicht verfügbar
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MCU50P04AHE3-TP MCU50P04AHE3(DPAK).pdf
MCU50P04AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCACD20N10Y-TP MCACD20N10Y(DFN5060-8D).pdf
MCACD20N10Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8D
Produkt ist nicht verfügbar
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MCACD20N10YHE3-TP MCACD20N10YHE3(PDFN5060-8D).pdf
MCACD20N10YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ43CAQ-TP SMCJ5.0AQ_SMCJ190CAQ(SMC).pdf
SMCJ43CAQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KP60CAL-TP 5KP22(C)AL_5KP188(C)AL(R-6).pdf
5KP60CAL-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 60VWM 97VC R6
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 97V
Voltage - Breakdown (Min): 66.7V
Bidirectional Channels: 1
Supplier Device Package: R-6
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 51.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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