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SI3134KL3B-TP SI3134KL3B-TP MCC (Micro Commercial Components) SI3134KL3B(DFN1006-3A).pdf Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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55+0.33 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
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SI3134KU6-TP SI3134KU6-TP MCC (Micro Commercial Components) SI3134KU6(DFN1010B-6).pdf Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
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SI3134KU6-TP SI3134KU6-TP MCC (Micro Commercial Components) SI3134KU6(DFN1010B-6).pdf Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
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SI3134KS-TP SI3134KS-TP MCC (Micro Commercial Components) SI3134KS(SOT-23).pdf Description: Interface
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 350mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SI3134KA-TP SI3134KA-TP MCC (Micro Commercial Components) SI3134KA(SOT-723).pdf Description: MOSFET N-CH 20V 750MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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SI3134KDWA-TPQ2 SI3134KDWA-TPQ2 MCC (Micro Commercial Components) SI3134KDWA(SOT-363).pdf Description: MOSFET 2N-CH 20V 0.75A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 370mW (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI3134KDWAS-TP SI3134KDWAS-TP MCC (Micro Commercial Components) SI3134KDWAS(SOT-363S).pdf Description: DUAL N-CHANNEL MOSFET,SOT-363S
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 260mW (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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MCACLS290N04YHE3-TP MCACLS290N04YHE3-TP MCC (Micro Commercial Components) MCACLS290N04YHE3(DFN5060-DSC).pdf Description: MOSFET N-CH 40 290A DFN5060-DSC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 195W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060-DSC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5413 pF @ 20 V
Qualification: AEC-Q101
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MCACLS290N04YHE3-TP MCACLS290N04YHE3-TP MCC (Micro Commercial Components) MCACLS290N04YHE3(DFN5060-DSC).pdf Description: MOSFET N-CH 40 290A DFN5060-DSC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 195W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060-DSC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5413 pF @ 20 V
Qualification: AEC-Q101
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MCACL1D5N04YHE3-TP MCACL1D5N04YHE3-TP MCC (Micro Commercial Components) MCACL1D5N04YHE3(DFN5060-C).pdf Description: N-CHANNEL MOSFET,DFN5060-C
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060-C
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
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MCACL1D5N04YHE3-TP MCACL1D5N04YHE3-TP MCC (Micro Commercial Components) MCACL1D5N04YHE3(DFN5060-C).pdf Description: N-CHANNEL MOSFET,DFN5060-C
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060-C
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
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MCACLF320N04Y-TP MCACLF320N04Y-TP MCC (Micro Commercial Components) MCACLF320N04Y(LFPAK56E).pdf Description: N-CHANNEL MOSFET,LFPAK56E
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: LFPAK56E
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6485 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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MCACLF320N04Y-TP MCACLF320N04Y-TP MCC (Micro Commercial Components) MCACLF320N04Y(LFPAK56E).pdf Description: N-CHANNEL MOSFET,LFPAK56E
Input Capacitance (Ciss) (Max) @ Vds: 6485 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: LFPAK56E
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
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MCACL220N04YHE3-TP MCACL220N04YHE3-TP MCC (Micro Commercial Components) MCACL220N04YHE3(DFN5060-C).pdf Description: MOSFET N-CH 40 220A DFN5060-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-C
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7216 pF @ 25 V
Qualification: AEC-Q101
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MJD45C-TP MJD45C-TP MCC (Micro Commercial Components) Description: MEDIUM POWER BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
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SICF1060P-BP SICF1060P-BP MCC (Micro Commercial Components) SICF1060P(ITO-220AC).pdf Description: DIODE SIL CARB 650V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
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MCAC125N04YHE3-TP MCAC125N04YHE3-TP MCC (Micro Commercial Components) MCAC125N04YHE3(DFN5060).pdf Description: MOSFET N-CH 40 125A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
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MCAC125N04YHE3-TP MCAC125N04YHE3-TP MCC (Micro Commercial Components) MCAC125N04YHE3(DFN5060).pdf Description: MOSFET N-CH 40 125A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
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100+1.71 EUR
500+1.37 EUR
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MCAC9D5N06YL-TP MCAC9D5N06YL-TP MCC (Micro Commercial Components) MCAC9D5N06YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 69W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCAC9D5N06YL-TP MCAC9D5N06YL-TP MCC (Micro Commercial Components) MCAC9D5N06YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 69W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
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SM6S30AHE3-TP SM6S30AHE3-TP MCC (Micro Commercial Components) SM6S10(C)AHE3_SM6S43(C)AHE3HE3(DO-218AB).pdf Description: TVS DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 4600W (4.6kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 95A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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MURS1620CT-BP MURS1620CT-BP MCC (Micro Commercial Components) MURS1620CT%20THRU%20MURS1660CT(TO-220AB).pdf Description: DIODE ARRAY GP 200V 16A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ESDSBLC2424P5WFHE3-TP ESDSBLC2424P5WFHE3-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS DIODE 24VWM 35VC DFN251010
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 170W
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 26.5V
Bidirectional Channels: 4
Supplier Device Package: DFN2510-10 (SWF)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 10-UFDFN
Packaging: Tape & Reel (TR)
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ESDSBLC2424P5WFHE3-TP ESDSBLC2424P5WFHE3-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS DIODE 24VWM 35VC DFN251010
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 170W
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 26.5V
Bidirectional Channels: 4
Supplier Device Package: DFN2510-10 (SWF)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
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18+0.99 EUR
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500+0.45 EUR
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SMF14AHE3-TP SMF14AHE3-TP MCC (Micro Commercial Components) SMF5.0AHE3_SMF100AHE3(SOD-123FL).pdf Description: TVS DIODE 14VWM 23.2VC SOD123FL
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 8.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
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SMF14AQ-TP SMF14AQ-TP MCC (Micro Commercial Components) SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf Description: TVS DIODE 14VWM 23.2VC SOD123FL
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 8.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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2N7002KWS-TP 2N7002KWS-TP MCC (Micro Commercial Components) 2N7002KWS(SOT-323S).pdf Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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2N7002KWS-TP 2N7002KWS-TP MCC (Micro Commercial Components) 2N7002KWS(SOT-323S).pdf Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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124+0.14 EUR
500+0.1 EUR
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MBRL30120CT-BP MBRL30120CT-BP MCC (Micro Commercial Components) MBRL30120CT(TO-220AB).pdf Description: DIODE ARR SCHOT 120V 30A TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FR207GP-TP-HF FR207GP-TP-HF MCC (Micro Commercial Components) FR201GP_FR207GP(DO-15).pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BAS40-04HE3-13P MCC (Micro Commercial Components) Description: IC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS123M-TP BSS123M-TP MCC (Micro Commercial Components) BSS123M(SOT-723).pdf Description: N-CHANNEL MOSFET,SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 200mA, 10V
Power Dissipation (Max): 337W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 50 V
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BSS123E-TP BSS123E-TP MCC (Micro Commercial Components) BSS123E(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 200mA, 10V
Power Dissipation (Max): 357mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 50 V
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SMA2Z24AQ-TP SMA2Z24AQ-TP MCC (Micro Commercial Components) SMA2Z6.8AQ_SMA2Z220AQ(SMA).pdf Description: IC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 2 W
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
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BZT52C5V1T-T3P BZT52C5V1T-T3P MCC (Micro Commercial Components) BZT52C(B)2V4T-BZT52C(B)39T(SOD-523).pdf Description: IC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Produkt ist nicht verfügbar
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MBR1060FCT-BP-HF MBR1060FCT-BP-HF MCC (Micro Commercial Components) MBR1020FCT-100FCT(ITO-220AB).pdf Description: IC
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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1N5351B-AP 1N5351B-AP MCC (Micro Commercial Components) 1N5338B-1N5388B(DO-15).pdf Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
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SF18G-AP-HF SF18G-AP-HF MCC (Micro Commercial Components) SF11G-SF18G(DO-41).pdf Description: IC
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MCACD60N04Y-TP MCACD60N04Y-TP MCC (Micro Commercial Components) MCACD60N04Y(PDFN5060-8D).pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
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MBRL40300CT-BP MBRL40300CT-BP MCC (Micro Commercial Components) MBRL40300CT(TO-220AB).pdf Description: DIODE ARR SCHOT 300V 40A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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CSPSBULC1V5AE-TP CSPSBULC1V5AE-TP MCC (Micro Commercial Components) CSPSBULC1V5AE(CSP0201).pdf Description: TVS DIODE 1.5VWM 2.9VC CSP0201
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Produkt ist nicht verfügbar
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CSPSBULC1V5AE-TP CSPSBULC1V5AE-TP MCC (Micro Commercial Components) CSPSBULC1V5AE(CSP0201).pdf Description: TVS DIODE 1.5VWM 2.9VC CSP0201
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
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65+0.27 EUR
132+0.13 EUR
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2000+0.074 EUR
5000+0.061 EUR
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CSPSBULC3V3AE-TP CSPSBULC3V3AE-TP MCC (Micro Commercial Components) CSPSBULC3V3AE(CSP0201).pdf Description: TVS DIODE 3.3VWM 2.9VC CSP0201
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSPSBULC3V3AE-TP CSPSBULC3V3AE-TP MCC (Micro Commercial Components) CSPSBULC3V3AE(CSP0201).pdf Description: TVS DIODE 3.3VWM 2.9VC CSP0201
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
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44+0.4 EUR
65+0.27 EUR
132+0.13 EUR
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1000+0.079 EUR
2000+0.074 EUR
5000+0.061 EUR
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CSPSBULC1V5LB-TP CSPSBULC1V5LB-TP MCC (Micro Commercial Components) CSPSBULC1V5LB(CSP1006-2).pdf Description: TVS DIODE 1.5VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
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CSPSBULC1V5LB-TP CSPSBULC1V5LB-TP MCC (Micro Commercial Components) CSPSBULC1V5LB(CSP1006-2).pdf Description: TVS DIODE 1.5VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
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CSPSBULC3V3LB-TP CSPSBULC3V3LB-TP MCC (Micro Commercial Components) CSPSBULC3V3LB(CSP1006-2).pdf Description: TVS DIODE 3.3VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSPSBULC3V3LB-TP CSPSBULC3V3LB-TP MCC (Micro Commercial Components) CSPSBULC3V3LB(CSP1006-2).pdf Description: TVS DIODE 3.3VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
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1N5363B-AP 1N5363B-AP MCC (Micro Commercial Components) 1N5338B-1N5388B(DO-15).pdf Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
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1N5380B-AP 1N5380B-AP MCC (Micro Commercial Components) 1N5338B-1N5388B(DO-15).pdf Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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MCU655N65FH-TP MCU655N65FH-TP MCC (Micro Commercial Components) MCU655N65FH(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 2.5A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 412.5 pF @ 100 V
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1N5334B-AP 1N5334B-AP MCC (Micro Commercial Components) 1N5334B(DO-15).pdf Description: IC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: DO-15
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
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1N5375B-AP 1N5375B-AP MCC (Micro Commercial Components) 1N5338B-1N5388B(DO-15).pdf Description: IC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
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1N5369B-AP 1N5369B-AP MCC (Micro Commercial Components) 1N5338B-1N5388B(DO-15).pdf Description: IC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V
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SGBJ3510-BP SGBJ3510-BP MCC (Micro Commercial Components) SGBJ3510_SGBJ3512(SGBJ).pdf Description: IC
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SGBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCAC110N06Y-TP MCAC110N06Y-TP MCC (Micro Commercial Components) MCAC110N06Y(DFN5060).pdf Description: MOSFET N-CH 60 110A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V
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MCAC110N06Y-TP MCAC110N06Y-TP MCC (Micro Commercial Components) MCAC110N06Y(DFN5060).pdf Description: MOSFET N-CH 60 110A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V
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BZT52C6V2L3PHE3-TP MCC (Micro Commercial Components) Description: IC
Packaging: Tape & Reel (TR)
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MCG240N10L-TP MCG240N10L-TP MCC (Micro Commercial Components) MCG240N10L(DFN3333).pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: DFN3333
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 3A, 10V
Power Dissipation (Max): 13.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 50 V
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RB521S-30-T3P RB521S-30-T3P MCC (Micro Commercial Components) RB521S-30(SOD-523).pdf Description: IC
Packaging: Tape & Reel (TR)
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SI3134KL3B-TP SI3134KL3B(DFN1006-3A).pdf
SI3134KL3B-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KU6-TP SI3134KU6(DFN1010B-6).pdf
SI3134KU6-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
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SI3134KU6-TP SI3134KU6(DFN1010B-6).pdf
SI3134KU6-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
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SI3134KS-TP SI3134KS(SOT-23).pdf
SI3134KS-TP
Hersteller: MCC (Micro Commercial Components)
Description: Interface
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 350mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SI3134KA-TP SI3134KA(SOT-723).pdf
SI3134KA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 750MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI3134KDWA-TPQ2 SI3134KDWA(SOT-363).pdf
SI3134KDWA-TPQ2
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 370mW (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI3134KDWAS-TP SI3134KDWAS(SOT-363S).pdf
SI3134KDWAS-TP
Hersteller: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,SOT-363S
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 260mW (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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MCACLS290N04YHE3-TP MCACLS290N04YHE3(DFN5060-DSC).pdf
MCACLS290N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 290A DFN5060-DSC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 195W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060-DSC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5413 pF @ 20 V
Qualification: AEC-Q101
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MCACLS290N04YHE3-TP MCACLS290N04YHE3(DFN5060-DSC).pdf
MCACLS290N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 290A DFN5060-DSC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 195W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060-DSC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5413 pF @ 20 V
Qualification: AEC-Q101
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3+6.99 EUR
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MCACL1D5N04YHE3-TP MCACL1D5N04YHE3(DFN5060-C).pdf
MCACL1D5N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060-C
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060-C
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
Produkt ist nicht verfügbar
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MCACL1D5N04YHE3-TP MCACL1D5N04YHE3(DFN5060-C).pdf
MCACL1D5N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060-C
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060-C
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
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6+3.22 EUR
10+2.07 EUR
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500+1.12 EUR
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MCACLF320N04Y-TP MCACLF320N04Y(LFPAK56E).pdf
MCACLF320N04Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,LFPAK56E
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: LFPAK56E
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6485 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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MCACLF320N04Y-TP MCACLF320N04Y(LFPAK56E).pdf
MCACLF320N04Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,LFPAK56E
Input Capacitance (Ciss) (Max) @ Vds: 6485 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: LFPAK56E
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tj)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 4721 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.29 EUR
10+2.79 EUR
100+1.92 EUR
500+1.58 EUR
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MCACL220N04YHE3-TP MCACL220N04YHE3(DFN5060-C).pdf
MCACL220N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 220A DFN5060-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-C
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7216 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MJD45C-TP
MJD45C-TP
Hersteller: MCC (Micro Commercial Components)
Description: MEDIUM POWER BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
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SICF1060P-BP SICF1060P(ITO-220AC).pdf
SICF1060P-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Produkt ist nicht verfügbar
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MCAC125N04YHE3-TP MCAC125N04YHE3(DFN5060).pdf
MCAC125N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 125A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCAC125N04YHE3-TP MCAC125N04YHE3(DFN5060).pdf
MCAC125N04YHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 125A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.89 EUR
10+2.5 EUR
100+1.71 EUR
500+1.37 EUR
1000+1.26 EUR
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MCAC9D5N06YL-TP MCAC9D5N06YL(DFN5060).pdf
MCAC9D5N06YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 69W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCAC9D5N06YL-TP MCAC9D5N06YL(DFN5060).pdf
MCAC9D5N06YL-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 69W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4932 Stücke:
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AnzahlPreis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.34 EUR
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SM6S30AHE3-TP SM6S10(C)AHE3_SM6S43(C)AHE3HE3(DO-218AB).pdf
SM6S30AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 4600W (4.6kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 95A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS1620CT-BP MURS1620CT%20THRU%20MURS1660CT(TO-220AB).pdf
MURS1620CT-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 200V 16A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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ESDSBLC2424P5WFHE3-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
ESDSBLC2424P5WFHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 24VWM 35VC DFN251010
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 170W
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 26.5V
Bidirectional Channels: 4
Supplier Device Package: DFN2510-10 (SWF)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 10-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.35 EUR
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ESDSBLC2424P5WFHE3-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
ESDSBLC2424P5WFHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 24VWM 35VC DFN251010
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 170W
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 26.5V
Bidirectional Channels: 4
Supplier Device Package: DFN2510-10 (SWF)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+0.99 EUR
22+0.83 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
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SMF14AHE3-TP SMF5.0AHE3_SMF100AHE3(SOD-123FL).pdf
SMF14AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 14VWM 23.2VC SOD123FL
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 8.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
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SMF14AQ-TP SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf
SMF14AQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 14VWM 23.2VC SOD123FL
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 8.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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2N7002KWS-TP 2N7002KWS(SOT-323S).pdf
2N7002KWS-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.076 EUR
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2N7002KWS-TP 2N7002KWS(SOT-323S).pdf
2N7002KWS-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
77+0.23 EUR
124+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
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MBRL30120CT-BP MBRL30120CT(TO-220AB).pdf
MBRL30120CT-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 120V 30A TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FR207GP-TP-HF FR201GP_FR207GP(DO-15).pdf
FR207GP-TP-HF
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BAS40-04HE3-13P
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS123M-TP BSS123M(SOT-723).pdf
BSS123M-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 200mA, 10V
Power Dissipation (Max): 337W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 50 V
Produkt ist nicht verfügbar
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BSS123E-TP BSS123E(SOT-523).pdf
BSS123E-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 200mA, 10V
Power Dissipation (Max): 357mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 50 V
Produkt ist nicht verfügbar
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SMA2Z24AQ-TP SMA2Z6.8AQ_SMA2Z220AQ(SMA).pdf
SMA2Z24AQ-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 2 W
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZT52C5V1T-T3P BZT52C(B)2V4T-BZT52C(B)39T(SOD-523).pdf
BZT52C5V1T-T3P
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Produkt ist nicht verfügbar
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MBR1060FCT-BP-HF MBR1020FCT-100FCT(ITO-220AB).pdf
MBR1060FCT-BP-HF
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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1N5351B-AP 1N5338B-1N5388B(DO-15).pdf
1N5351B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
Produkt ist nicht verfügbar
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SF18G-AP-HF SF11G-SF18G(DO-41).pdf
SF18G-AP-HF
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MCACD60N04Y-TP MCACD60N04Y(PDFN5060-8D).pdf
MCACD60N04Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
Produkt ist nicht verfügbar
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MBRL40300CT-BP MBRL40300CT(TO-220AB).pdf
MBRL40300CT-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 300V 40A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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CSPSBULC1V5AE-TP CSPSBULC1V5AE(CSP0201).pdf
CSPSBULC1V5AE-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 1.5VWM 2.9VC CSP0201
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Produkt ist nicht verfügbar
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CSPSBULC1V5AE-TP CSPSBULC1V5AE(CSP0201).pdf
CSPSBULC1V5AE-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 1.5VWM 2.9VC CSP0201
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
auf Bestellung 9965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
44+0.4 EUR
65+0.27 EUR
132+0.13 EUR
500+0.1 EUR
1000+0.079 EUR
2000+0.074 EUR
5000+0.061 EUR
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CSPSBULC3V3AE-TP CSPSBULC3V3AE(CSP0201).pdf
CSPSBULC3V3AE-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 2.9VC CSP0201
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSPSBULC3V3AE-TP CSPSBULC3V3AE(CSP0201).pdf
CSPSBULC3V3AE-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 2.9VC CSP0201
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP0201
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
auf Bestellung 9965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
44+0.4 EUR
65+0.27 EUR
132+0.13 EUR
500+0.1 EUR
1000+0.079 EUR
2000+0.074 EUR
5000+0.061 EUR
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CSPSBULC1V5LB-TP CSPSBULC1V5LB(CSP1006-2).pdf
CSPSBULC1V5LB-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 1.5VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSPSBULC1V5LB-TP CSPSBULC1V5LB(CSP1006-2).pdf
CSPSBULC1V5LB-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 1.5VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CSPSBULC3V3LB-TP CSPSBULC3V3LB(CSP1006-2).pdf
CSPSBULC3V3LB-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSPSBULC3V3LB-TP CSPSBULC3V3LB(CSP1006-2).pdf
CSPSBULC3V3LB-TP
Hersteller: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 2.9VC CSP10062
Power Line Protection: No
Power - Peak Pulse: 13W
Voltage - Clamping (Max) @ Ipp: 2.9V (Typ)
Voltage - Breakdown (Min): 4.5V
Bidirectional Channels: 1
Supplier Device Package: CSP1006-2
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
77+0.23 EUR
154+0.11 EUR
500+0.093 EUR
1000+0.066 EUR
2000+0.062 EUR
5000+0.054 EUR
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1N5363B-AP 1N5338B-1N5388B(DO-15).pdf
1N5363B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
Produkt ist nicht verfügbar
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1N5380B-AP 1N5338B-1N5388B(DO-15).pdf
1N5380B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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MCU655N65FH-TP MCU655N65FH(DPAK).pdf
MCU655N65FH-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 2.5A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 412.5 pF @ 100 V
Produkt ist nicht verfügbar
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1N5334B-AP 1N5334B(DO-15).pdf
1N5334B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: DO-15
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
Produkt ist nicht verfügbar
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1N5375B-AP 1N5338B-1N5388B(DO-15).pdf
1N5375B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
Produkt ist nicht verfügbar
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1N5369B-AP 1N5338B-1N5388B(DO-15).pdf
1N5369B-AP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: DO-15
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V
Produkt ist nicht verfügbar
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SGBJ3510-BP SGBJ3510_SGBJ3512(SGBJ).pdf
SGBJ3510-BP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SGBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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MCAC110N06Y-TP MCAC110N06Y(DFN5060).pdf
MCAC110N06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 110A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.88 EUR
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MCAC110N06Y-TP MCAC110N06Y(DFN5060).pdf
MCAC110N06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 110A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V
auf Bestellung 9940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.33 EUR
10+2.13 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
2000+1.01 EUR
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BZT52C6V2L3PHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MCG240N10L-TP MCG240N10L(DFN3333).pdf
MCG240N10L-TP
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: DFN3333
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 3A, 10V
Power Dissipation (Max): 13.8W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 50 V
Produkt ist nicht verfügbar
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RB521S-30-T3P RB521S-30(SOD-523).pdf
RB521S-30-T3P
Hersteller: MCC (Micro Commercial Components)
Description: IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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