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2SA1980-G-AP 2SA1980-G-AP MCC (Micro Commercial Components) 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2SA1980-Y-AP 2SA1980-Y-AP MCC (Micro Commercial Components) 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2SA1980-L-AP 2SA1980-L-AP MCC (Micro Commercial Components) 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BAS40-05HE3-TP BAS40-05HE3-TP MCC (Micro Commercial Components) BAS40HE3(SOT-23).pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS40-05HE3-TP BAS40-05HE3-TP MCC (Micro Commercial Components) BAS40HE3(SOT-23).pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84DW-TP BSS84DW-TP MCC (Micro Commercial Components) BSS84DW(SOT-363).pdf Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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BSS84DW-TP BSS84DW-TP MCC (Micro Commercial Components) BSS84DW(SOT-363).pdf Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
43+0.41 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
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BSS8402DW-TP BSS8402DW-TP MCC (Micro Commercial Components) BSS8402DW(SOT-363).pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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BSS8402DW-TP BSS8402DW-TP MCC (Micro Commercial Components) BSS8402DW(SOT-363).pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 763 Stücke:
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22+0.83 EUR
35+0.52 EUR
100+0.33 EUR
500+0.25 EUR
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MCB150N06KY-TP MCB150N06KY-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
Produkt ist nicht verfügbar
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MCB150N06KY-TP MCB150N06KY-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
auf Bestellung 655 Stücke:
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5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
Mindestbestellmenge: 5
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SIC20120PTA-BP SIC20120PTA-BP MCC (Micro Commercial Components) SIC20120PTA(TO-247).pdf Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
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MMBT2907AHE3-TP MMBT2907AHE3-TP MCC (Micro Commercial Components) MMBT2907AHE3(SOT-23).pdf Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
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MMBT2907AHE3-TP MMBT2907AHE3-TP MCC (Micro Commercial Components) MMBT2907AHE3(SOT-23).pdf Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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MSJB17N80-TP MSJB17N80-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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MSJB17N80-TP MSJB17N80-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
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3+8.36 EUR
10+5.57 EUR
100+3.98 EUR
Mindestbestellmenge: 3
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BAV21WSHE3-TP BAV21WSHE3-TP MCC (Micro Commercial Components) Description: DIODE STANDARD 200V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV21WSHE3-TP BAV21WSHE3-TP MCC (Micro Commercial Components) Description: DIODE STANDARD 200V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
95+0.19 EUR
294+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
Mindestbestellmenge: 63
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BAV21WHE3-TP BAV21WHE3-TP MCC (Micro Commercial Components) BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV21WHE3-TP BAV21WHE3-TP MCC (Micro Commercial Components) BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
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SK54LHE3-TP SK54LHE3-TP MCC (Micro Commercial Components) SK52LHE3-SK510LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54LHE3-TP SK54LHE3-TP MCC (Micro Commercial Components) SK52LHE3-SK510LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3007 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.30 EUR
Mindestbestellmenge: 17
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SK54BHE3-LTP SK54BHE3-LTP MCC (Micro Commercial Components) SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54BHE3-LTP SK54BHE3-LTP MCC (Micro Commercial Components) SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1332 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
29+0.61 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.26 EUR
Mindestbestellmenge: 24
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SK54AHE3-LTP SK54AHE3-LTP MCC (Micro Commercial Components) SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54AHE3-LTP SK54AHE3-LTP MCC (Micro Commercial Components) SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1061 Stücke:
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20+0.92 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
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BCP56-16HE3-TP BCP56-16HE3-TP MCC (Micro Commercial Components) BCP56-16HE3(SOT-223).pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.18 EUR
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BCP56-16HE3-TP BCP56-16HE3-TP MCC (Micro Commercial Components) BCP56-16HE3(SOT-223).pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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100+0.31 EUR
500+0.24 EUR
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MMSS8050HE3-H-TP MMSS8050HE3-H-TP MCC (Micro Commercial Components) MMSS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 1.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSS8050HE3-H-TP MMSS8050HE3-H-TP MCC (Micro Commercial Components) MMSS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 1.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2715 Stücke:
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56+0.32 EUR
89+0.20 EUR
190+0.09 EUR
500+0.09 EUR
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MMS8050HE3-H-TP MMS8050HE3-H-TP MCC (Micro Commercial Components) MMS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMS8050HE3-H-TP MMS8050HE3-H-TP MCC (Micro Commercial Components) MMS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2146 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
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MMBT5551HE3-TP MMBT5551HE3-TP MCC (Micro Commercial Components) MMBT5551HE3(SOT-23).pdf Description: TRANS NPN 160V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT5551HE3-TP MMBT5551HE3-TP MCC (Micro Commercial Components) MMBT5551HE3(SOT-23).pdf Description: TRANS NPN 160V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2190 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
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MCP75N10Y-BP MCP75N10Y-BP MCC (Micro Commercial Components) MCP75N10Y(TO-220ABH).pdf Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 205W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2429 pF @ 50 V
auf Bestellung 3467 Stücke:
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6+3.27 EUR
50+1.58 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.03 EUR
2000+0.95 EUR
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BZT52C3V3HE3-TP BZT52C3V3HE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C3V3HE3-TP BZT52C3V3HE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2581 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
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BC856BWHE3-TP BC856BWHE3-TP MCC (Micro Commercial Components) BC856AWHE3-BC858CWHE3(SOT-323).pdf Description: TRANS PNP 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC856BWHE3-TP BC856BWHE3-TP MCC (Micro Commercial Components) BC856AWHE3-BC858CWHE3(SOT-323).pdf Description: TRANS PNP 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
89+0.20 EUR
143+0.12 EUR
500+0.09 EUR
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SI2102A-TP SI2102A-TP MCC (Micro Commercial Components) SI2102A(SOT-323).pdf Description: N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
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SI2102A-TP SI2102A-TP MCC (Micro Commercial Components) SI2102A(SOT-323).pdf Description: N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 2464 Stücke:
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36+0.49 EUR
59+0.30 EUR
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SI2310A-TP SI2310A-TP MCC (Micro Commercial Components) SI2310A(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
Produkt ist nicht verfügbar
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SI2310A-TP SI2310A-TP MCC (Micro Commercial Components) SI2310A(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
auf Bestellung 737 Stücke:
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32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
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SS26HE3-LTP SS26HE3-LTP MCC (Micro Commercial Components) SS22HE3-L_SS210HE3-L(SMA).pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS26HE3-LTP SS26HE3-LTP MCC (Micro Commercial Components) SS22HE3-L_SS210HE3-L(SMA).pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 576 Stücke:
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28+0.65 EUR
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100+0.25 EUR
500+0.19 EUR
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2SK3019A-TP 2SK3019A-TP MCC (Micro Commercial Components) 2SK3019A(SOT-523).pdf Description: N-CHANNEL MOSFET SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
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2SK3019A-TP 2SK3019A-TP MCC (Micro Commercial Components) 2SK3019A(SOT-523).pdf Description: N-CHANNEL MOSFET SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
auf Bestellung 1626 Stücke:
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34+0.53 EUR
55+0.32 EUR
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500+0.15 EUR
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SK24HE3-LTP SK24HE3-LTP MCC (Micro Commercial Components) SK22HE3-L_SK210HE3-L(SMB).pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK24HE3-LTP SK24HE3-LTP MCC (Micro Commercial Components) SK22HE3-L_SK210HE3-L(SMB).pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 596 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
46+0.38 EUR
100+0.24 EUR
500+0.18 EUR
Mindestbestellmenge: 29
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2N7002HV-TP 2N7002HV-TP MCC (Micro Commercial Components) 2N7002HV(SOT-23).pdf Description: N-CHANNEL MOSFET SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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2N7002HV-TP 2N7002HV-TP MCC (Micro Commercial Components) 2N7002HV(SOT-23).pdf Description: N-CHANNEL MOSFET SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 1642 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
86+0.21 EUR
138+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
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BAS516HE3-TP BAS516HE3-TP MCC (Micro Commercial Components) BAS516HE3(SOD-523).pdf Description: DIODE STANDARD 100V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS516HE3-TP BAS516HE3-TP MCC (Micro Commercial Components) BAS516HE3(SOD-523).pdf Description: DIODE STANDARD 100V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 5191 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
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BAS316HE3-TP BAS316HE3-TP MCC (Micro Commercial Components) BAS316HE3(SOD-323).pdf Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS316HE3-TP BAS316HE3-TP MCC (Micro Commercial Components) BAS316HE3(SOD-323).pdf Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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SI2305BHE3-TP SI2305BHE3-TP MCC (Micro Commercial Components) SI2305BHE3(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SI2305BHE3-TP SI2305BHE3-TP MCC (Micro Commercial Components) SI2305BHE3(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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SI2312B-TP SI2312B-TP MCC (Micro Commercial Components) SI2312B(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V
Produkt ist nicht verfügbar
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SI2312B-TP SI2312B-TP MCC (Micro Commercial Components) SI2312B(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
35+0.51 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 21
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SS210HE3-LTP SS210HE3-LTP MCC (Micro Commercial Components) SS22HE3-L_SS210HE3-L(SMA).pdf Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SA1980-G-AP 2SA1980-x.pdf
2SA1980-G-AP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2SA1980-Y-AP 2SA1980-x.pdf
2SA1980-Y-AP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2SA1980-L-AP 2SA1980-x.pdf
2SA1980-L-AP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BAS40-05HE3-TP BAS40HE3(SOT-23).pdf
BAS40-05HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS40-05HE3-TP BAS40HE3(SOT-23).pdf
BAS40-05HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84DW-TP BSS84DW(SOT-363).pdf
BSS84DW-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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BSS84DW-TP BSS84DW(SOT-363).pdf
BSS84DW-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.41 EUR
100+0.26 EUR
500+0.20 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
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BSS8402DW-TP BSS8402DW(SOT-363).pdf
BSS8402DW-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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BSS8402DW-TP BSS8402DW(SOT-363).pdf
BSS8402DW-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
35+0.52 EUR
100+0.33 EUR
500+0.25 EUR
Mindestbestellmenge: 22
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MCB150N06KY-TP
MCB150N06KY-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
Produkt ist nicht verfügbar
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MCB150N06KY-TP
MCB150N06KY-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
Mindestbestellmenge: 5
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SIC20120PTA-BP SIC20120PTA(TO-247).pdf
SIC20120PTA-BP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
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MMBT2907AHE3-TP MMBT2907AHE3(SOT-23).pdf
MMBT2907AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT2907AHE3-TP MMBT2907AHE3(SOT-23).pdf
MMBT2907AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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MSJB17N80-TP
MSJB17N80-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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MSJB17N80-TP
MSJB17N80-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.36 EUR
10+5.57 EUR
100+3.98 EUR
Mindestbestellmenge: 3
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BAV21WSHE3-TP
BAV21WSHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV21WSHE3-TP
BAV21WSHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
95+0.19 EUR
294+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
Mindestbestellmenge: 63
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BAV21WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV21WHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV21WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV21WHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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SK54LHE3-TP SK52LHE3-SK510LHE3(DO-214AB).pdf
SK54LHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54LHE3-TP SK52LHE3-SK510LHE3(DO-214AB).pdf
SK54LHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.30 EUR
Mindestbestellmenge: 17
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SK54BHE3-LTP SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf
SK54BHE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54BHE3-LTP SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf
SK54BHE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
29+0.61 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.26 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SK54AHE3-LTP SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf
SK54AHE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK54AHE3-LTP SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf
SK54AHE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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BCP56-16HE3-TP BCP56-16HE3(SOT-223).pdf
BCP56-16HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.18 EUR
Mindestbestellmenge: 2500
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BCP56-16HE3-TP BCP56-16HE3(SOT-223).pdf
BCP56-16HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 22
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MMSS8050HE3-H-TP MMSS8050HE3(SOT-23).pdf
MMSS8050HE3-H-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 25V 1.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSS8050HE3-H-TP MMSS8050HE3(SOT-23).pdf
MMSS8050HE3-H-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 25V 1.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.20 EUR
190+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
MMS8050HE3-H-TP MMS8050HE3(SOT-23).pdf
MMS8050HE3-H-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 25V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMS8050HE3-H-TP MMS8050HE3(SOT-23).pdf
MMS8050HE3-H-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 25V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
MMBT5551HE3-TP MMBT5551HE3(SOT-23).pdf
MMBT5551HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 160V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT5551HE3-TP MMBT5551HE3(SOT-23).pdf
MMBT5551HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 160V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
MCP75N10Y-BP MCP75N10Y(TO-220ABH).pdf
MCP75N10Y-BP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 205W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2429 pF @ 50 V
auf Bestellung 3467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
50+1.58 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.03 EUR
2000+0.95 EUR
Mindestbestellmenge: 6
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BZT52C3V3HE3-TP
BZT52C3V3HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C3V3HE3-TP
BZT52C3V3HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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BC856BWHE3-TP BC856AWHE3-BC858CWHE3(SOT-323).pdf
BC856BWHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC856BWHE3-TP BC856AWHE3-BC858CWHE3(SOT-323).pdf
BC856BWHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.20 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
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SI2102A-TP SI2102A(SOT-323).pdf
SI2102A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
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SI2102A-TP SI2102A(SOT-323).pdf
SI2102A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
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SI2310A-TP SI2310A(SOT-23).pdf
SI2310A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
Produkt ist nicht verfügbar
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SI2310A-TP SI2310A(SOT-23).pdf
SI2310A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
auf Bestellung 737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
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SS26HE3-LTP SS22HE3-L_SS210HE3-L(SMA).pdf
SS26HE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS26HE3-LTP SS22HE3-L_SS210HE3-L(SMA).pdf
SS26HE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.40 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 28
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2SK3019A-TP 2SK3019A(SOT-523).pdf
2SK3019A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
Produkt ist nicht verfügbar
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2SK3019A-TP 2SK3019A(SOT-523).pdf
2SK3019A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
auf Bestellung 1626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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SK24HE3-LTP SK22HE3-L_SK210HE3-L(SMB).pdf
SK24HE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK24HE3-LTP SK22HE3-L_SK210HE3-L(SMB).pdf
SK24HE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
46+0.38 EUR
100+0.24 EUR
500+0.18 EUR
Mindestbestellmenge: 29
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2N7002HV-TP 2N7002HV(SOT-23).pdf
2N7002HV-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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2N7002HV-TP 2N7002HV(SOT-23).pdf
2N7002HV-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 1642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
138+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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BAS516HE3-TP BAS516HE3(SOD-523).pdf
BAS516HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 100V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS516HE3-TP BAS516HE3(SOD-523).pdf
BAS516HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 100V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 5191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 59
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BAS316HE3-TP BAS316HE3(SOD-323).pdf
BAS316HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS316HE3-TP BAS316HE3(SOD-323).pdf
BAS316HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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SI2305BHE3-TP SI2305BHE3(SOT-23).pdf
SI2305BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SI2305BHE3-TP SI2305BHE3(SOT-23).pdf
SI2305BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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SI2312B-TP SI2312B(SOT-23).pdf
SI2312B-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V
Produkt ist nicht verfügbar
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SI2312B-TP SI2312B(SOT-23).pdf
SI2312B-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
35+0.51 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 21
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SS210HE3-LTP SS22HE3-L_SS210HE3-L(SMA).pdf
SS210HE3-LTP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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