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MMST2222AHE3-TP MMST2222AHE3-TP MCC (Micro Commercial Components) MMST2222AHE3(SOT-323).pdf Description: TRANS NPN 40V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
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59+0.36 EUR
97+0.21 EUR
156+0.13 EUR
500+0.098 EUR
1000+0.086 EUR
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MMXZ5246B-TP MMXZ5246B-TP MCC (Micro Commercial Components) MMXZ5223B-MMXZ5259B(SOD-323).pdf Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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MMXZ5246B-TP MMXZ5246B-TP MCC (Micro Commercial Components) MMXZ5223B-MMXZ5259B(SOD-323).pdf Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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75+0.29 EUR
210+0.1 EUR
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BC846AWHE3-TP BC846AWHE3-TP MCC (Micro Commercial Components) BC846AWHE3-BC848CWHE3(SOT-323).pdf Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC846AWHE3-TP BC846AWHE3-TP MCC (Micro Commercial Components) BC846AWHE3-BC848CWHE3(SOT-323).pdf Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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MCU110N06YB-TP MCU110N06YB-TP MCC (Micro Commercial Components) MCU110N06YB(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 55A, 10V
Power Dissipation (Max): 80W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 30 V
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MCU110N06YB-TP MCU110N06YB-TP MCC (Micro Commercial Components) MCU110N06YB(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 55A, 10V
Power Dissipation (Max): 80W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 30 V
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MCU110N06YA-TP MCU110N06YA-TP MCC (Micro Commercial Components) MCU110N06YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
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MCU110N06YA-TP MCU110N06YA-TP MCC (Micro Commercial Components) MCU110N06YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Produkt ist nicht verfügbar
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SS310HE-TP SS310HE-TP MCC (Micro Commercial Components) SS32HE_thru_SS320HE.pdf Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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FR201GP-TP FR201GP-TP MCC (Micro Commercial Components) FR201GP-FR207GP(DO-15).pdf Description: DIODE STANDARD 50V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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FR201-AP FR201-AP MCC (Micro Commercial Components) FR201-FR207%28DO-15%29.pdf Description: DIODE STANDARD 50V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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2KBP005-BP MCC (Micro Commercial Components) 2KBP005_thru_2KBP10_RevD_6-20-17.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBPL
Packaging: Bulk
Package / Case: 4-SIP, KBPL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C
Technology: Standard
Supplier Device Package: KBPL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MCQD08N06-TP MCQD08N06-TP MCC (Micro Commercial Components) MCQD08N06(SOP-8).pdf Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 9.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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MCAC38N10YA-TP MCAC38N10YA-TP MCC (Micro Commercial Components) MCAC38N10YA(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
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MCAC38N10YA-TP MCAC38N10YA-TP MCC (Micro Commercial Components) MCAC38N10YA(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
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MCAC95N06Y-TP MCAC95N06Y-TP MCC (Micro Commercial Components) MCAC95N06Y(DFN5060).pdf Description: MOSFET N-CH 60 95A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
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MCAC95N06Y-TP MCAC95N06Y-TP MCC (Micro Commercial Components) MCAC95N06Y(DFN5060).pdf Description: MOSFET N-CH 60 95A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
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100+2.05 EUR
500+1.64 EUR
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MCAC68N03Y-TP MCAC68N03Y-TP MCC (Micro Commercial Components) Description: MOSFET N-CH 30 68A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
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MCAC68N03Y-TP MCAC68N03Y-TP MCC (Micro Commercial Components) Description: MOSFET N-CH 30 68A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
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20+1.07 EUR
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500+0.54 EUR
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2SB1182-Q-TP 2SB1182-Q-TP MCC (Micro Commercial Components) 2SB1182(DPAK).pdf Description: TRANS PNP 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.5 W
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MCP150N06A-BP MCP150N06A-BP MCC (Micro Commercial Components) Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 225W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
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MCW200N10Y-TP MCW200N10Y-TP MCC (Micro Commercial Components) MCW200N10Y%28TO-247%29.pdf Description: MOSFET N-CH 200A
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 237 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13310 pF @ 50 V
Produkt ist nicht verfügbar
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MCMNP2065-TP MCMNP2065-TP MCC (Micro Commercial Components) MCMNP2065(DFN2020-6L).pdf Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
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MCMNP2065-TP MCMNP2065-TP MCC (Micro Commercial Components) MCMNP2065(DFN2020-6L).pdf Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
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1N4003-N-0-4-AP 1N4003-N-0-4-AP MCC (Micro Commercial Components) Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SL05N06-TP SL05N06-TP MCC (Micro Commercial Components) SL05N06(SOT-23-3L).pdf Description: N-CHANNEL MOSFET,SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
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SL05N06-TP SL05N06-TP MCC (Micro Commercial Components) SL05N06(SOT-23-3L).pdf Description: N-CHANNEL MOSFET,SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
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MCT05N06-TP MCT05N06-TP MCC (Micro Commercial Components) MCT05N06(SOT-223).pdf Description: N-CHANNEL MOSFET,SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
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MCT05N06-TP MCT05N06-TP MCC (Micro Commercial Components) MCT05N06(SOT-223).pdf Description: N-CHANNEL MOSFET,SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
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MCQD05N06-TP MCQD05N06-TP MCC (Micro Commercial Components) MCQD05N06(SOP-8).pdf Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 30V
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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MCQD05N06-TP MCQD05N06-TP MCC (Micro Commercial Components) MCQD05N06(SOP-8).pdf Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 30V
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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BZT52C20SHE3-TP BZT52C20SHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 20V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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BZT52C20SHE3-TP BZT52C20SHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 20V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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BZT52C20HE3-TP BZT52C20HE3-TP MCC (Micro Commercial Components) BZT52C2V4HE3_BZT52C47HE3(SOD-123).pdf Description: DIODE ZENER 20V 500MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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BZT52C20HE3-TP BZT52C20HE3-TP MCC (Micro Commercial Components) BZT52C2V4HE3_BZT52C47HE3(SOD-123).pdf Description: DIODE ZENER 20V 500MW SOD123
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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GBJA1504-BP MCC (Micro Commercial Components) GBJA15005-GBJA1510(JA).pdf Description: BRIDGE RECT 1PHASE 400V 15A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SL3007-TP SL3007-TP MCC (Micro Commercial Components) SL3007(SOT-23-3L).pdf Description: P-CHANNEL MOSFET, SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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SL3007-TP SL3007-TP MCC (Micro Commercial Components) SL3007(SOT-23-3L).pdf Description: P-CHANNEL MOSFET, SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 3136 Stücke:
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22+0.99 EUR
35+0.61 EUR
100+0.3 EUR
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ES2M-TP ES2M-TP MCC (Micro Commercial Components) ES2A-ES2M.pdf Description: DIODE STANDARD 1000V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCU60P04-TP MCU60P04-TP MCC (Micro Commercial Components) MCU60P04(DPAK).pdf Description: P-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 20 V
auf Bestellung 7500 Stücke:
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MCU60P04-TP MCU60P04-TP MCC (Micro Commercial Components) MCU60P04(DPAK).pdf Description: P-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 20 V
auf Bestellung 8600 Stücke:
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MCAC80P06Y-TP MCAC80P06Y-TP MCC (Micro Commercial Components) MCAC80P06Y(DFN5060).pdf Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
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MCAC80P06Y-TP MCAC80P06Y-TP MCC (Micro Commercial Components) MCAC80P06Y(DFN5060).pdf Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
auf Bestellung 9274 Stücke:
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MMSZ5231BHE3-TP MMSZ5231BHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.087 EUR
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MMSZ5231BHE3-TP MMSZ5231BHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 5996 Stücke:
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40+0.52 EUR
67+0.32 EUR
120+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
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1SS355HE3-TP 1SS355HE3-TP MCC (Micro Commercial Components) 1SS355HE3(SOD-323).pdf Description: DIODE STANDARD 80V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 6V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.075 EUR
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1SS355HE3-TP 1SS355HE3-TP MCC (Micro Commercial Components) 1SS355HE3(SOD-323).pdf Description: DIODE STANDARD 80V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 6V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 7766 Stücke:
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136+0.15 EUR
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HER101G-AP HER101G-AP MCC (Micro Commercial Components) Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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2N7002DWL-TP 2N7002DWL-TP MCC (Micro Commercial Components) 2N7002DWL_Rev3-3_4-9-22.pdf Description: MOSFET 2N-CH 60V 0.115A SOT23-6L
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 225mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIL2322A-TP SIL2322A-TP MCC (Micro Commercial Components) SIL2322A(SOT23-6L).pdf Description: MOSFET 2N-CH 20V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
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SIL2322A-TP SIL2322A-TP MCC (Micro Commercial Components) SIL2322A(SOT23-6L).pdf Description: MOSFET 2N-CH 20V 3A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
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39+0.55 EUR
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MIW30N65FA-BP MIW30N65FA-BP MCC (Micro Commercial Components) MIW30N65FA(TO-247AB).pdf Description: IGBT TRENCH FS 650V 60A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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MMSZ5230BHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5230BHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCAC38N10Y-TP MCAC38N10Y-TP MCC (Micro Commercial Components) MCAC38N10Y(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 59W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V
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MCAC38N10Y-TP MCAC38N10Y-TP MCC (Micro Commercial Components) MCAC38N10Y(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 59W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V
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MCAC80N06YA-TP MCAC80N06YA-TP MCC (Micro Commercial Components) MCAC80N06YA_Rev3-4_4-9-22.pdf Description: MOSFET N-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4894 pF @ 30 V
Produkt ist nicht verfügbar
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RB520S-30HE3-TP RB520S-30HE3-TP MCC (Micro Commercial Components) RB520S-30HE3(SOD-523).pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB520S-30HE3-TP RB520S-30HE3-TP MCC (Micro Commercial Components) RB520S-30HE3(SOD-523).pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMST2222AHE3-TP MMST2222AHE3(SOT-323).pdf
MMST2222AHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 40V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
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59+0.36 EUR
97+0.21 EUR
156+0.13 EUR
500+0.098 EUR
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MMXZ5246B-TP MMXZ5223B-MMXZ5259B(SOD-323).pdf
MMXZ5246B-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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MMXZ5246B-TP MMXZ5223B-MMXZ5259B(SOD-323).pdf
MMXZ5246B-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 593 Stücke:
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50+0.42 EUR
75+0.29 EUR
210+0.1 EUR
500+0.095 EUR
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BC846AWHE3-TP BC846AWHE3-BC848CWHE3(SOT-323).pdf
BC846AWHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC846AWHE3-TP BC846AWHE3-BC848CWHE3(SOT-323).pdf
BC846AWHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCU110N06YB-TP MCU110N06YB(DPAK).pdf
MCU110N06YB-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 55A, 10V
Power Dissipation (Max): 80W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 30 V
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2500+1.23 EUR
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MCU110N06YB-TP MCU110N06YB(DPAK).pdf
MCU110N06YB-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 55A, 10V
Power Dissipation (Max): 80W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 30 V
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5+4.36 EUR
10+2.81 EUR
100+1.92 EUR
500+1.54 EUR
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MCU110N06YA-TP MCU110N06YA(DPAK).pdf
MCU110N06YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Produkt ist nicht verfügbar
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MCU110N06YA-TP MCU110N06YA(DPAK).pdf
MCU110N06YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Produkt ist nicht verfügbar
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SS310HE-TP SS32HE_thru_SS320HE.pdf
SS310HE-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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FR201GP-TP FR201GP-FR207GP(DO-15).pdf
FR201GP-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 50V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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FR201-AP FR201-FR207%28DO-15%29.pdf
FR201-AP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 50V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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2KBP005-BP 2KBP005_thru_2KBP10_RevD_6-20-17.pdf
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 50V 2A KBPL
Packaging: Bulk
Package / Case: 4-SIP, KBPL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C
Technology: Standard
Supplier Device Package: KBPL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MCQD08N06-TP MCQD08N06(SOP-8).pdf
MCQD08N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 9.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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MCAC38N10YA-TP MCAC38N10YA(DFN5060).pdf
MCAC38N10YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
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MCAC38N10YA-TP MCAC38N10YA(DFN5060).pdf
MCAC38N10YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
auf Bestellung 11331 Stücke:
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7+3 EUR
12+1.89 EUR
100+1.27 EUR
500+1 EUR
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MCAC95N06Y-TP MCAC95N06Y(DFN5060).pdf
MCAC95N06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 95A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
Produkt ist nicht verfügbar
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MCAC95N06Y-TP MCAC95N06Y(DFN5060).pdf
MCAC95N06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 95A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
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100+2.05 EUR
500+1.64 EUR
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MCAC68N03Y-TP
MCAC68N03Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 30 68A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
Produkt ist nicht verfügbar
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MCAC68N03Y-TP
MCAC68N03Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 30 68A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
auf Bestellung 6721 Stücke:
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13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.44 EUR
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2SB1182-Q-TP 2SB1182(DPAK).pdf
2SB1182-Q-TP
Hersteller: MCC (Micro Commercial Components)
Description: TRANS PNP 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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MCP150N06A-BP
MCP150N06A-BP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 225W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
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MCW200N10Y-TP MCW200N10Y%28TO-247%29.pdf
MCW200N10Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 200A
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 237 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13310 pF @ 50 V
Produkt ist nicht verfügbar
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MCMNP2065-TP MCMNP2065(DFN2020-6L).pdf
MCMNP2065-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
Produkt ist nicht verfügbar
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MCMNP2065-TP MCMNP2065(DFN2020-6L).pdf
MCMNP2065-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
auf Bestellung 3455 Stücke:
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18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.36 EUR
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1N4003-N-0-4-AP
1N4003-N-0-4-AP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SL05N06-TP SL05N06(SOT-23-3L).pdf
SL05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
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SL05N06-TP SL05N06(SOT-23-3L).pdf
SL05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
auf Bestellung 5439 Stücke:
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20+1.09 EUR
29+0.74 EUR
100+0.45 EUR
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MCT05N06-TP MCT05N06(SOT-223).pdf
MCT05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
Produkt ist nicht verfügbar
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MCT05N06-TP MCT05N06(SOT-223).pdf
MCT05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 30 V
auf Bestellung 4573 Stücke:
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8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
500+0.92 EUR
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MCQD05N06-TP MCQD05N06(SOP-8).pdf
MCQD05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 30V
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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MCQD05N06-TP MCQD05N06(SOP-8).pdf
MCQD05N06-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 30V
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 321 Stücke:
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13+1.63 EUR
16+1.33 EUR
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BZT52C20SHE3-TP
BZT52C20SHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 20V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C20SHE3-TP
BZT52C20SHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 20V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C20HE3-TP BZT52C2V4HE3_BZT52C47HE3(SOD-123).pdf
BZT52C20HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 20V 500MW SOD123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C20HE3-TP BZT52C2V4HE3_BZT52C47HE3(SOD-123).pdf
BZT52C20HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 20V 500MW SOD123
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBJA1504-BP GBJA15005-GBJA1510(JA).pdf
Hersteller: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 400V 15A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SL3007-TP SL3007(SOT-23-3L).pdf
SL3007-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
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SL3007-TP SL3007(SOT-23-3L).pdf
SL3007-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 3136 Stücke:
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AnzahlPrivatkunde
22+0.99 EUR
35+0.61 EUR
100+0.3 EUR
500+0.29 EUR
1000+0.25 EUR
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ES2M-TP ES2A-ES2M.pdf
ES2M-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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MCU60P04-TP MCU60P04(DPAK).pdf
MCU60P04-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 20 V
auf Bestellung 7500 Stücke:
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2500+0.71 EUR
5000+0.65 EUR
7500+0.63 EUR
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MCU60P04-TP MCU60P04(DPAK).pdf
MCU60P04-TP
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 20 V
auf Bestellung 8600 Stücke:
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8+2.67 EUR
13+1.68 EUR
100+1.12 EUR
500+0.87 EUR
1000+0.8 EUR
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MCAC80P06Y-TP MCAC80P06Y(DFN5060).pdf
MCAC80P06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
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5000+1.37 EUR
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MCAC80P06Y-TP MCAC80P06Y(DFN5060).pdf
MCAC80P06Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
auf Bestellung 9274 Stücke:
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5+4.71 EUR
10+3.02 EUR
100+2.08 EUR
500+1.68 EUR
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MMSZ5231BHE3-TP
MMSZ5231BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.087 EUR
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MMSZ5231BHE3-TP
MMSZ5231BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 5996 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
120+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
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1SS355HE3-TP 1SS355HE3(SOD-323).pdf
1SS355HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 80V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 6V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.075 EUR
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1SS355HE3-TP 1SS355HE3(SOD-323).pdf
1SS355HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 80V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 6V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 7766 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
84+0.25 EUR
136+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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HER101G-AP
HER101G-AP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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2N7002DWL-TP 2N7002DWL_Rev3-3_4-9-22.pdf
2N7002DWL-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 0.115A SOT23-6L
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 225mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIL2322A-TP SIL2322A(SOT23-6L).pdf
SIL2322A-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
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SIL2322A-TP SIL2322A(SOT23-6L).pdf
SIL2322A-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 3A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2748 Stücke:
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AnzahlPrivatkunde
24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
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MIW30N65FA-BP MIW30N65FA(TO-247AB).pdf
MIW30N65FA-BP
Hersteller: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 60A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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MMSZ5230BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5230BHE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MCAC38N10Y-TP MCAC38N10Y(DFN5060).pdf
MCAC38N10Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 59W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.54 EUR
10000+0.5 EUR
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MCAC38N10Y-TP MCAC38N10Y(DFN5060).pdf
MCAC38N10Y-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 59W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V
auf Bestellung 10654 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.23 EUR
15+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.65 EUR
2000+0.6 EUR
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MCAC80N06YA-TP MCAC80N06YA_Rev3-4_4-9-22.pdf
MCAC80N06YA-TP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4894 pF @ 30 V
Produkt ist nicht verfügbar
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RB520S-30HE3-TP RB520S-30HE3(SOD-523).pdf
RB520S-30HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RB520S-30HE3-TP RB520S-30HE3(SOD-523).pdf
RB520S-30HE3-TP
Hersteller: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH