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RL104GP-AP Micro Commercial Co RL101GP_RL107GP(A-405).pdf Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104-AP Micro Commercial Co RL101_-_RL107.pdf Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104GP-TP RL104GP-TP Micro Commercial Co RL101GP_RL107GP(A-405).pdf Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104-TP RL104-TP Micro Commercial Co RL101_-_RL107.pdf Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BC546A-BP BC546A-BP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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FR106GP-AP FR106GP-AP Micro Commercial Co FR101GP-FR107GP(DO-41).pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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FR106GP-TP FR106GP-TP Micro Commercial Co FR101GP-FR107GP(DO-41).pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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TPT5609-B-AP TPT5609-B-AP Micro Commercial Co Description: TRANS NPN 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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BZT52C30-TP BZT52C30-TP Micro Commercial Co BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf Description: DIODE ZENER 30V 200MW SOD123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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BZT52C30-TP BZT52C30-TP Micro Commercial Co BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf Description: DIODE ZENER 30V 200MW SOD123
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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145+0.14 EUR
328+0.064 EUR
500+0.063 EUR
1000+0.061 EUR
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BZT52C5V1LP-TP BZT52C5V1LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 5.1V 100MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX84C56-TP BZX84C56-TP Micro Commercial Co BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf Description: DIODE ZENER 56V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
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BZX84C56-TP BZX84C56-TP Micro Commercial Co BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf Description: DIODE ZENER 56V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
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51+0.42 EUR
100+0.23 EUR
500+0.14 EUR
1000+0.099 EUR
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KTA1281-O-AP KTA1281-O-AP Micro Commercial Co Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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KTA1281-Y-AP KTA1281-Y-AP Micro Commercial Co Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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1N4933GP-AP 1N4933GP-AP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4933GP-TP 1N4933GP-TP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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DTC143ESA-BP DTC143ESA-BP Micro Commercial Co DTC143ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DTC143ESA-AP DTC143ESA-AP Micro Commercial Co DTC143ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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PB2510-BP-HF Micro Commercial Co Description: 25A, BRIDGE, PB
Packaging: Tube
Package / Case: 4-ESIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SD05C-TP SD05C-TP Micro Commercial Co SD05C(SOD-323).pdf Description: TVS DIODE 5VWM 13.5VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
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SD05C-TP SD05C-TP Micro Commercial Co SD05C(SOD-323).pdf Description: TVS DIODE 5VWM 13.5VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
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FR153GP-AP FR153GP-AP Micro Commercial Co FR151GP-FR157GP(DO-15).pdf Description: DIODE GEN PURP 200V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCQ4406-TP MCQ4406-TP Micro Commercial Co MCQ4406(SOP-8).pdf Description: MOSFET N-CH 30V 10A 8SOP
Produkt ist nicht verfügbar
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MCQ4406-TP MCQ4406-TP Micro Commercial Co MCQ4406(SOP-8).pdf Description: MOSFET N-CH 30V 10A 8SOP
Produkt ist nicht verfügbar
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SL510-TP SL510-TP Micro Commercial Co Description: DIODE SCHOTTKY 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SL510-TP SL510-TP Micro Commercial Co Description: DIODE SCHOTTKY 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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16+1.32 EUR
19+1.15 EUR
100+0.8 EUR
500+0.67 EUR
1000+0.57 EUR
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ESD5V0D7-TP-HF ESD5V0D7-TP-HF Micro Commercial Co ESD3V3D7~ESD12VD7(SOD-723).pdf Description: TVS DIODE 5V 13.3V SOD723
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-723
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 13.3V
Power - Peak Pulse: 117W
Power Line Protection: No
Part Status: Obsolete
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8000+0.11 EUR
16000+0.089 EUR
24000+0.084 EUR
56000+0.079 EUR
200000+0.071 EUR
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1N4760A-TP 1N4760A-TP Micro Commercial Co 1N4728-1N4761_Rev_A.pdf Description: DIODE ZENER 68V 1W DO41G
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-41G
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Produkt ist nicht verfügbar
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US2Q-TP US2Q-TP Micro Commercial Co US2Q(DO-214AA).pdf Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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3000+0.3 EUR
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US2Q-TP US2Q-TP Micro Commercial Co US2Q(DO-214AA).pdf Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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US1Q-TP US1Q-TP Micro Commercial Co PdfFile_774590.pdf Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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US1Q-TP US1Q-TP Micro Commercial Co PdfFile_774590.pdf Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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SIX3439K-TP SIX3439K-TP Micro Commercial Co SIX3439K(SOT-563).pdf Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
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SIX3439K-TP SIX3439K-TP Micro Commercial Co SIX3439K(SOT-563).pdf Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
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SIX3134K-TP SIX3134K-TP Micro Commercial Co SIX3134K(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
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SIX3134K-TP SIX3134K-TP Micro Commercial Co SIX3134K(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
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DTC114ESA-BP DTC114ESA-BP Micro Commercial Co DTC114ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC114ESA-AP DTC114ESA-AP Micro Commercial Co DTC114ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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FR1001GP-AP FR1001GP-AP Micro Commercial Co FR1001GP-FR1007GP(R-6).pdf Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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FR1001GP-TP FR1001GP-TP Micro Commercial Co FR1001GP-FR1007GP(R-6).pdf Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4100-TP 1N4100-TP Micro Commercial Co 1N4614-1N4125(DO-35)_DS.pdf Description: DIODE ZENER 7.5V 500MW DO35
Produkt ist nicht verfügbar
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FR602GP-AP FR602GP-AP Micro Commercial Co FR601GP-FR607GP(R-6).pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N6001B-TP 1N6001B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 500MW DO-35
Produkt ist nicht verfügbar
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US5B-TP US5B-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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US5B-TP US5B-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 19115 Stücke:
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MPSW51AM-AP MPSW51AM-AP Micro Commercial Co Description: TRANS PNP 40V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW51A-AP MPSW51A-AP Micro Commercial Co MPSW51A%28TO-92%29-V1.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51A-BP MPSW51A-BP Micro Commercial Co MPSW51A%28TO-92%29-V1.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51-AP MPSW51-AP Micro Commercial Co MPSW51(TO-92)-V1.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51-BP MPSW51-BP Micro Commercial Co MPSW51(TO-92)-V1.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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GBL408-BPC01 GBL408-BPC01 Micro Commercial Co GBL4005-BPC01-GBL410-BPC01(GBL).pdf Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBL4005-BP GBL4005-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBL401-BP GBL401-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBL402-BP GBL402-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBL404-BP GBL404-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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MCAC45N10Y-YP MCAC45N10Y-YP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060 PACKAG
Produkt ist nicht verfügbar
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MCAC45N10Y-YP MCAC45N10Y-YP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060 PACKAG
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SK210-TP SK210-TP Micro Commercial Co SK22-SK210%28HSMB%29.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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2SB647L-C-AP 2SB647L-C-AP Micro Commercial Co 2SB647L.pdf Description: TRANS PNP 80V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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RL104GP-AP RL101GP_RL107GP(A-405).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104-AP RL101_-_RL107.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104GP-TP RL101GP_RL107GP(A-405).pdf
RL104GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RL104-TP RL101_-_RL107.pdf
RL104-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BC546A-BP BC546-BC548(TO-92)-V1.pdf
BC546A-BP
Hersteller: Micro Commercial Co
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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FR106GP-AP FR101GP-FR107GP(DO-41).pdf
FR106GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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FR106GP-TP FR101GP-FR107GP(DO-41).pdf
FR106GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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TPT5609-B-AP
TPT5609-B-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 2V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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BZT52C30-TP BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf
BZT52C30-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 30V 200MW SOD123
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C30-TP BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf
BZT52C30-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 30V 200MW SOD123
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
auf Bestellung 3898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
145+0.14 EUR
328+0.064 EUR
500+0.063 EUR
1000+0.061 EUR
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BZT52C5V1LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C5V1LP-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 5.1V 100MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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BZX84C56-TP BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf
BZX84C56-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 56V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Produkt ist nicht verfügbar
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BZX84C56-TP BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf
BZX84C56-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 56V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
51+0.42 EUR
100+0.23 EUR
500+0.14 EUR
1000+0.099 EUR
Mindestbestellmenge: 42 Stücke
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KTA1281-O-AP
KTA1281-O-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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KTA1281-Y-AP
KTA1281-Y-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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1N4933GP-AP 1N4933GP-1N4937GP(DO-41).pdf
1N4933GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4933GP-TP 1N4933GP-1N4937GP(DO-41).pdf
1N4933GP-TP
Hersteller: Micro Commercial Co
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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DTC143ESA-BP DTC143ESA%28TO-92S%29-V1.pdf
DTC143ESA-BP
Hersteller: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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DTC143ESA-AP DTC143ESA%28TO-92S%29-V1.pdf
DTC143ESA-AP
Hersteller: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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PB2510-BP-HF
Hersteller: Micro Commercial Co
Description: 25A, BRIDGE, PB
Packaging: Tube
Package / Case: 4-ESIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SD05C-TP SD05C(SOD-323).pdf
SD05C-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 13.5VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
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SD05C-TP SD05C(SOD-323).pdf
SD05C-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 13.5VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
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FR153GP-AP FR151GP-FR157GP(DO-15).pdf
FR153GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCQ4406-TP MCQ4406(SOP-8).pdf
MCQ4406-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30V 10A 8SOP
Produkt ist nicht verfügbar
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MCQ4406-TP MCQ4406(SOP-8).pdf
MCQ4406-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30V 10A 8SOP
Produkt ist nicht verfügbar
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SL510-TP
SL510-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SL510-TP
SL510-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 2534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
19+1.15 EUR
100+0.8 EUR
500+0.67 EUR
1000+0.57 EUR
Mindestbestellmenge: 16 Stücke
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ESD5V0D7-TP-HF ESD3V3D7~ESD12VD7(SOD-723).pdf
ESD5V0D7-TP-HF
Hersteller: Micro Commercial Co
Description: TVS DIODE 5V 13.3V SOD723
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-723
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 13.3V
Power - Peak Pulse: 117W
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.11 EUR
16000+0.089 EUR
24000+0.084 EUR
56000+0.079 EUR
200000+0.071 EUR
Mindestbestellmenge: 8000 Stücke
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1N4760A-TP 1N4728-1N4761_Rev_A.pdf
1N4760A-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 68V 1W DO41G
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-41G
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Produkt ist nicht verfügbar
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US2Q-TP US2Q(DO-214AA).pdf
US2Q-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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US2Q-TP US2Q(DO-214AA).pdf
US2Q-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 10568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.54 EUR
500+0.42 EUR
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US1Q-TP PdfFile_774590.pdf
US1Q-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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10000+0.27 EUR
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US1Q-TP PdfFile_774590.pdf
US1Q-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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23+0.94 EUR
27+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
2000+0.32 EUR
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SIX3439K-TP SIX3439K(SOT-563).pdf
SIX3439K-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
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3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
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SIX3439K-TP SIX3439K(SOT-563).pdf
SIX3439K-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
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SIX3134K-TP SIX3134K(SOT-563).pdf
SIX3134K-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
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3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
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SIX3134K-TP SIX3134K(SOT-563).pdf
SIX3134K-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 40922 Stücke:
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AnzahlPrivatkunde
19+1.15 EUR
30+0.7 EUR
100+0.45 EUR
500+0.35 EUR
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DTC114ESA-BP DTC114ESA%28TO-92S%29-V1.pdf
DTC114ESA-BP
Hersteller: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC114ESA-AP DTC114ESA%28TO-92S%29-V1.pdf
DTC114ESA-AP
Hersteller: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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FR1001GP-AP FR1001GP-FR1007GP(R-6).pdf
FR1001GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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FR1001GP-TP FR1001GP-FR1007GP(R-6).pdf
FR1001GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4100-TP 1N4614-1N4125(DO-35)_DS.pdf
1N4100-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 7.5V 500MW DO35
Produkt ist nicht verfügbar
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FR602GP-AP FR601GP-FR607GP(R-6).pdf
FR602GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N6001B-TP 1N5985B-1N6016B_DS.pdf
1N6001B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 500MW DO-35
Produkt ist nicht verfügbar
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US5B-TP US5A-US5M(DO-214AB).pdf
US5B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
15000+0.25 EUR
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US5B-TP US5A-US5M(DO-214AB).pdf
US5B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 19115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
26+0.81 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.31 EUR
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MPSW51AM-AP
MPSW51AM-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW51A-AP MPSW51A%28TO-92%29-V1.pdf
MPSW51A-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51A-BP MPSW51A%28TO-92%29-V1.pdf
MPSW51A-BP
Hersteller: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51-AP MPSW51(TO-92)-V1.pdf
MPSW51-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 30V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSW51-BP MPSW51(TO-92)-V1.pdf
MPSW51-BP
Hersteller: Micro Commercial Co
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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GBL408-BPC01 GBL4005-BPC01-GBL410-BPC01(GBL).pdf
GBL408-BPC01
Hersteller: Micro Commercial Co
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBL4005-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL4005-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBL401-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL401-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBL402-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL402-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBL404-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL404-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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MCAC45N10Y-YP
MCAC45N10Y-YP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060 PACKAG
Produkt ist nicht verfügbar
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MCAC45N10Y-YP
MCAC45N10Y-YP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060 PACKAG
Produkt ist nicht verfügbar
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SK210-TP SK22-SK210%28HSMB%29.pdf
SK210-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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2SB647L-C-AP 2SB647L.pdf
2SB647L-C-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 80V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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