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MBR3U200-TP MBR3U200-TP Micro Commercial Co MBR3U200(TO-277).pdf Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR3U200-TP MBR3U200-TP Micro Commercial Co MBR3U200(TO-277).pdf Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MIW40N120-BP MIW40N120-BP Micro Commercial Co MIW40N120(TO-247).pdf Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/265ns
Switching Energy: 3.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 239 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 277 W
Produkt ist nicht verfügbar
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MCAC53N06Y-TP MCAC53N06Y-TP Micro Commercial Co MCAC53N06Y(DFN5060).pdf Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.52 EUR
Mindestbestellmenge: 5000
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MCAC53N06Y-TP MCAC53N06Y-TP Micro Commercial Co MCAC53N06Y(DFN5060).pdf Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
auf Bestellung 8010 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
17+1.08 EUR
100+0.84 EUR
500+0.71 EUR
1000+0.58 EUR
2000+0.55 EUR
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1N4004-N-2-3-AP 1N4004-N-2-3-AP Micro Commercial Co Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF24G-AP SF24G-AP Micro Commercial Co SF21G-SF28G(DO-15).pdf Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MMBT3904L3-TP MMBT3904L3-TP Micro Commercial Co MMBT3904L3(DFN1006-3).pdf Description: TRANS NPN 40V 0.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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FR601GP-AP FR601GP-AP Micro Commercial Co FR601GP-FR607GP(R-6).pdf Description: DIODE GPP FAST 6A R-6
Produkt ist nicht verfügbar
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5.0SMLJ160A-TP Micro Commercial Co 5.0SMLJ11A-5.0SMLJ400A(LSMC)-J.pdf Description: TVS DIODE 160V 259V DO214AB
Produkt ist nicht verfügbar
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5.0SMLJ16A-TP 5.0SMLJ16A-TP Micro Commercial Co 5.0SMLJ11A-5.0SMLJ400A(LSMC).pdf Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 193A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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5.0SMLJ16CA-TP Micro Commercial Co 5.0SMLJ11A-5.0SMLJ400A(LSMC)-J.pdf Description: TVS DIODE 16V 26V DO214AB
Produkt ist nicht verfügbar
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AZ23C3V6-TP AZ23C3V6-TP Micro Commercial Co AZ23C2V7~AZ23C51(SOT-23).PDF Description: DIODE ZENER ARRAY 3.6V SOT23
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AZ23C3V6-TP AZ23C3V6-TP Micro Commercial Co AZ23C2V7~AZ23C51(SOT-23).PDF Description: DIODE ZENER ARRAY 3.6V SOT23
auf Bestellung 2851 Stücke:
Lieferzeit 10-14 Tag (e)
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BY133GP-AP BY133GP-AP Micro Commercial Co BY133GP(DO-41).pdf Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Produkt ist nicht verfügbar
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BY133GP-TP BY133GP-TP Micro Commercial Co BY133GP(DO-41).pdf Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Produkt ist nicht verfügbar
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MCAC40N10YA-TP MCAC40N10YA-TP Micro Commercial Co MCAC40N10YA.pdf Description: MOSFET N-CH 100 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Produkt ist nicht verfügbar
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MCAC40N10YA-TP MCAC40N10YA-TP Micro Commercial Co MCAC40N10YA.pdf Description: MOSFET N-CH 100 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Produkt ist nicht verfügbar
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BA158GP-AP BA158GP-AP Micro Commercial Co BA157GP~BA159GP(DO-41).pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BA158GP-TP BA158GP-TP Micro Commercial Co BA157GP~BA159GP(DO-41).pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BC636-16-AP BC636-16-AP Micro Commercial Co BC636-1x,BC638,BC640.pdf Description: TRANS PNP 45V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
Produkt ist nicht verfügbar
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HER302G-AP HER302G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SF66G-AP SF66G-AP Micro Commercial Co SF61G~SF68G(DO-201AD).pdf Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF66G-TP SF66G-TP Micro Commercial Co SF61G~SF68G(DO-201AD).pdf Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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MGR1207-BP MGR1207-BP Micro Commercial Co Description: DIODE GEN PURP 1KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL252-TP RL252-TP Micro Commercial Co RL251-RL257(R-3).PDF Description: DIODE GEN PURP 100V 2.5A R3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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RL252GP-TP RL252GP-TP Micro Commercial Co RL251GP-RL257GP(R-3).PDF Description: DIODE GEN PURP 2.5A 100V R3
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MPSA55-AP MPSA55-AP Micro Commercial Co MPSA55,MPSA56(TO-92)-V1%20(1).pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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SRA501GP-TP Micro Commercial Co Description: DIODE
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SRA501-TP Micro Commercial Co Description: DIODE
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SRA502GP-TP Micro Commercial Co Description: DIODE
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SRA502-TP Micro Commercial Co Description: DIODE
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SRA503GP-TP Micro Commercial Co Description: DIODE
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SRA503-TP Micro Commercial Co Description: DIODE
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SRA504GP-TP Micro Commercial Co Description: DIODE
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SRA504-TP Micro Commercial Co Description: DIODE
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SRA505GP-TP Micro Commercial Co Description: DIODE
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SRA505-TP Micro Commercial Co Description: DIODE
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SRA506GP-TP Micro Commercial Co Description: DIODE
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SRA506-TP Micro Commercial Co Description: DIODE
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SRA507GP-TP Micro Commercial Co Description: DIODE
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SRA507-TP Micro Commercial Co Description: DIODE
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RB551V-40-TP RB551V-40-TP Micro Commercial Co RB551V-40(SOD-323).pdf Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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RB551V-40-TP RB551V-40-TP Micro Commercial Co RB551V-40(SOD-323).pdf Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
63+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 44
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BZT52C22LP-TP BZT52C22LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 22V 250MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GBJA6005-BP Micro Commercial Co Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJA601-BP Micro Commercial Co Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJA602-BP Micro Commercial Co Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJA604-BP Micro Commercial Co Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJA608-BP Micro Commercial Co GBJA6005-GBJA610(JA).pdf Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJA610-BP Micro Commercial Co GBJA6005-GBJA610(JA).pdf Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJL6005-BP Micro Commercial Co Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL601-BP Micro Commercial Co Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJL602-BP Micro Commercial Co Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJL604-BP Micro Commercial Co Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL608-BP Micro Commercial Co Description: BRIDGE RECT 1PHASE 800V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBJL610-BP Micro Commercial Co Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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R2000FGP-TP R2000FGP-TP Micro Commercial Co R2000FGP(DO-41).pdf Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.11 EUR
10000+0.096 EUR
15000+0.092 EUR
25000+0.09 EUR
35000+0.088 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
R2000FGP-TP R2000FGP-TP Micro Commercial Co R2000FGP(DO-41).pdf Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 44065 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
52+0.34 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 35
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MCB70N10Y-TP MCB70N10Y-TP Micro Commercial Co MCB70N10Y.pdf Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
Produkt ist nicht verfügbar
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MBR3U200-TP MBR3U200(TO-277).pdf
MBR3U200-TP
Hersteller: Micro Commercial Co
Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR3U200-TP MBR3U200(TO-277).pdf
MBR3U200-TP
Hersteller: Micro Commercial Co
Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MIW40N120-BP MIW40N120(TO-247).pdf
MIW40N120-BP
Hersteller: Micro Commercial Co
Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/265ns
Switching Energy: 3.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 239 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 277 W
Produkt ist nicht verfügbar
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MCAC53N06Y-TP MCAC53N06Y(DFN5060).pdf
MCAC53N06Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
Mindestbestellmenge: 5000
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MCAC53N06Y-TP MCAC53N06Y(DFN5060).pdf
MCAC53N06Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
auf Bestellung 8010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
17+1.08 EUR
100+0.84 EUR
500+0.71 EUR
1000+0.58 EUR
2000+0.55 EUR
Mindestbestellmenge: 14
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1N4004-N-2-3-AP
1N4004-N-2-3-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF24G-AP SF21G-SF28G(DO-15).pdf
SF24G-AP
Hersteller: Micro Commercial Co
Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MMBT3904L3-TP MMBT3904L3(DFN1006-3).pdf
MMBT3904L3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 40V 0.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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FR601GP-AP FR601GP-FR607GP(R-6).pdf
FR601GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GPP FAST 6A R-6
Produkt ist nicht verfügbar
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5.0SMLJ160A-TP 5.0SMLJ11A-5.0SMLJ400A(LSMC)-J.pdf
Hersteller: Micro Commercial Co
Description: TVS DIODE 160V 259V DO214AB
Produkt ist nicht verfügbar
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5.0SMLJ16A-TP 5.0SMLJ11A-5.0SMLJ400A(LSMC).pdf
5.0SMLJ16A-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 193A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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5.0SMLJ16CA-TP 5.0SMLJ11A-5.0SMLJ400A(LSMC)-J.pdf
Hersteller: Micro Commercial Co
Description: TVS DIODE 16V 26V DO214AB
Produkt ist nicht verfügbar
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AZ23C3V6-TP AZ23C2V7~AZ23C51(SOT-23).PDF
AZ23C3V6-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER ARRAY 3.6V SOT23
Produkt ist nicht verfügbar
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AZ23C3V6-TP AZ23C2V7~AZ23C51(SOT-23).PDF
AZ23C3V6-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER ARRAY 3.6V SOT23
auf Bestellung 2851 Stücke:
Lieferzeit 10-14 Tag (e)
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BY133GP-AP BY133GP(DO-41).pdf
BY133GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Produkt ist nicht verfügbar
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BY133GP-TP BY133GP(DO-41).pdf
BY133GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Produkt ist nicht verfügbar
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MCAC40N10YA-TP MCAC40N10YA.pdf
MCAC40N10YA-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Produkt ist nicht verfügbar
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MCAC40N10YA-TP MCAC40N10YA.pdf
MCAC40N10YA-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Produkt ist nicht verfügbar
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BA158GP-AP BA157GP~BA159GP(DO-41).pdf
BA158GP-AP
Hersteller: Micro Commercial Co
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BA158GP-TP BA157GP~BA159GP(DO-41).pdf
BA158GP-TP
Hersteller: Micro Commercial Co
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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BC636-16-AP BC636-1x,BC638,BC640.pdf
BC636-16-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 45V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
Produkt ist nicht verfügbar
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HER302G-AP HER301G~HER308G(DO-201AD).pdf
HER302G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SF66G-AP SF61G~SF68G(DO-201AD).pdf
SF66G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SF66G-TP SF61G~SF68G(DO-201AD).pdf
SF66G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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MGR1207-BP
MGR1207-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL252-TP RL251-RL257(R-3).PDF
RL252-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 2.5A R3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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RL252GP-TP RL251GP-RL257GP(R-3).PDF
RL252GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 2.5A 100V R3
Produkt ist nicht verfügbar
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MPSA55-AP MPSA55,MPSA56(TO-92)-V1%20(1).pdf
MPSA55-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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SRA501GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA501-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA502GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA502-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA503GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA503-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA504GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA504-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA505GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA505-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA506GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA506-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA507GP-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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SRA507-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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RB551V-40-TP RB551V-40(SOD-323).pdf
RB551V-40-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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RB551V-40-TP RB551V-40(SOD-323).pdf
RB551V-40-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
63+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C22LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C22LP-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 22V 250MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GBJA6005-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
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GBJA601-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
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GBJA602-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
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GBJA604-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Produkt ist nicht verfügbar
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GBJA608-BP GBJA6005-GBJA610(JA).pdf
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJA610-BP GBJA6005-GBJA610(JA).pdf
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJL6005-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL601-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL602-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL604-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Produkt ist nicht verfügbar
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GBJL608-BP
Hersteller: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 800V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBJL610-BP
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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R2000FGP-TP R2000FGP(DO-41).pdf
R2000FGP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.11 EUR
10000+0.096 EUR
15000+0.092 EUR
25000+0.09 EUR
35000+0.088 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
R2000FGP-TP R2000FGP(DO-41).pdf
R2000FGP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 44065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
MCB70N10Y-TP MCB70N10Y.pdf
MCB70N10Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
Produkt ist nicht verfügbar
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