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SIX3134KA-TP SIX3134KA-TP Micro Commercial Co SIX3134KA(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 180mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
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SIX3134KA-TP SIX3134KA-TP Micro Commercial Co SIX3134KA(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 180mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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BZT52C8V2LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 8.2V 100MW SOD882
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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SK52A-LTP SK52A-LTP Micro Commercial Co SK52A-L_SK5200A-L(SMA).pdf Description: DIODE SCHOTTKY 20V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MCT04N10B-TP MCT04N10B-TP Micro Commercial Co MCT04N10B(SOT-223).pdf Description: N-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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MCT04N10B-TP MCT04N10B-TP Micro Commercial Co MCT04N10B(SOT-223).pdf Description: N-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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15+1.43 EUR
24+0.88 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
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BZX84C6V8HE3-TP BZX84C6V8HE3-TP Micro Commercial Co Description: DIODE ZENER 6.8V 350MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BZX84C6V8HE3-TP BZX84C6V8HE3-TP Micro Commercial Co Description: DIODE ZENER 6.8V 350MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SMA2EZ27D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMB2EZ27D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMA3EZ27D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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KBJ1010G-BP KBJ1010G-BP Micro Commercial Co KBJ10005G-KBJ1010G(KBJ).pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5439 Stücke:
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6+3.52 EUR
20+1.96 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.08 EUR
2000+1 EUR
5000+0.9 EUR
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SF21G-AP SF21G-AP Micro Commercial Co SF21G-SF28G(DO-15).pdf Description: DIODE GEN PURP 50V 2A DO15
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SF21G-TP SF21G-TP Micro Commercial Co SF21G-SF28G(DO-15).pdf Description: DIODE GEN PURP 50V 2A DO15
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TL431BU-TP Micro Commercial Co Description: IC REG ADJ VOLT
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TL431BLP-BP TL431BLP-BP Micro Commercial Co TL431BLP%28TO-92%29-V1.pdf Description: IC VREF SHUNT ADJ 0.5% TO92-3
Tolerance: ±0.5%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Programmable
Mounting Type: Through Hole
Voltage - Input: 2.4875V ~ 37V
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TL431V-TP Micro Commercial Co TL431V.pdf Description: IC REG ADJ VOLT
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TL431BLP-AP TL431BLP-AP Micro Commercial Co TL431BLP(TO-92)-V1.pdf Description: IC VREF 36V 0.5% TO92
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1N4005-N-2-1-BP 1N4005-N-2-1-BP Micro Commercial Co Description: DIODE GEN PURP 600V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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1N4005-N-0-2-BP 1N4005-N-0-2-BP Micro Commercial Co Description: DIODE GEN PURP 600V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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BZT52C2V7LP-TP Micro Commercial Co BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 2.7V 100MW SOD882
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SR104-TP SR104-TP Micro Commercial Co Description: DIODE SCHOTTKY 1A DO-41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Part Status: Obsolete
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MIP15R12P2TN-BP Micro Commercial Co MIP15R12P2TN(P2).pdf Description: IGBT MODULES 1200V 15A, P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: P2
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1350 pF @ 25 V
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1N4005-N-0-4-AP 1N4005-N-0-4-AP Micro Commercial Co Description: DIODE GEN PURP 600V 1A DO41
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
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1N4005-N-2-3-AP 1N4005-N-2-3-AP Micro Commercial Co Description: DIODE GEN PURP 600V 1A DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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D965-T-AP D965-T-AP Micro Commercial Co D965-(T,R).pdf Description: TRANS NPN 22V 5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 500mA, 2V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 750 mW
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SS18E-TP SS18E-TP Micro Commercial Co Description: DIODE SCHOTTKY 80V 1A SMAE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
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MCB40P10Y-TP MCB40P10Y-TP Micro Commercial Co MCB40P10Y(D2PAK).pdf Description: P-CHANNEL MOSFET,D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 10V
Power Dissipation (Max): 125W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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MCB40P10Y-TP MCB40P10Y-TP Micro Commercial Co MCB40P10Y(D2PAK).pdf Description: P-CHANNEL MOSFET,D2-PAK
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 125W (Tj)
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5+4.46 EUR
10+4 EUR
100+3.21 EUR
Mindestbestellmenge: 5 Stücke
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RL107GP-AP Micro Commercial Co RL101GP-RL107GP(A-405).pdf Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL107GP-TP RL107GP-TP Micro Commercial Co RL101GP-RL107GP(A-405).pdf Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RL107-N-2-3-AP RL107-N-2-3-AP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL107-N-2-1-BP RL107-N-2-1-BP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RL107-N-2-4-AP RL107-N-2-4-AP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RL107-N-2-2-BP RL107-N-2-2-BP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RL107-TP RL107-TP Micro Commercial Co RL101_-_RL107.pdf Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL253-TP RL253-TP Micro Commercial Co RL251-RL257(R-3).pdf Description: DIODE GEN PURP 2.5A 200V R3
Produkt ist nicht verfügbar
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RL253M-AP RL253M-AP Micro Commercial Co RL251M_-_RL257M.pdf Description: DIODE GEN PURP 200V 2.5A DO15
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL253M-TP RL253M-TP Micro Commercial Co RL251M_-_RL257M.pdf Description: DIODE GEN PURP 200V 2.5A DO15
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2.5A
Produkt ist nicht verfügbar
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RL253GP-AP Micro Commercial Co RL251GP-RL257GP(R-3).PDF Description: DIODE GEN PURP 200V 2.5A R-3
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-3
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-3, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MCU60P06-TP MCU60P06-TP Micro Commercial Co MCU60P06(DPAK).pdf Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
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MCU60P06-TP MCU60P06-TP Micro Commercial Co MCU60P06(DPAK).pdf Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
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EMZ7-TP EMZ7-TP Micro Commercial Co EMZ7(SOT-563).pdf Description: DUAL N+P TRANSISTORS,SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-563
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EMZ7-TP EMZ7-TP Micro Commercial Co EMZ7(SOT-563).pdf Description: DUAL N+P TRANSISTORS,SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-563
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500+0.24 EUR
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BZT52C9V1SHE3-TP BZT52C9V1SHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 300MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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BZT52C9V1SHE3-TP BZT52C9V1SHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C9V1HE3-TP BZT52C9V1HE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C9V1HE3-TP BZT52C9V1HE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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FRA801G-BP FRA801G-BP Micro Commercial Co FRA801G-FRA807G.pdf Description: DIODE FAST REC TO-220AC
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FRA803G-BP FRA803G-BP Micro Commercial Co FRA801G-FRA807G.pdf Description: DIODE FAST REC TO-220AC
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BAV19WHE3-TP BAV19WHE3-TP Micro Commercial Co BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE GEN PURP 100V 250MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BAV19WHE3-TP BAV19WHE3-TP Micro Commercial Co BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE GEN PURP 100V 250MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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72+0.3 EUR
105+0.2 EUR
156+0.13 EUR
500+0.1 EUR
1000+0.092 EUR
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1N5995B-TP 1N5995B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 6.2V 500MW DO35
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10000+0.071 EUR
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1N6015B-TP 1N6015B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 43V 500MW DO35
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SK210HE3-LTP SK210HE3-LTP Micro Commercial Co SK22HE3-L_SK210HE3-L(SMB).pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SK210HE3-LTP SK210HE3-LTP Micro Commercial Co SK22HE3-L_SK210HE3-L(SMB).pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SF25-AP SF25-AP Micro Commercial Co SF21-SF28.pdf Description: DIODE GEN PURP 300V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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1N4681-TP 1N4681-TP Micro Commercial Co 1N4678-1N4717_DS.pdf Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
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SF15G-AP SF15G-AP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 300V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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SF15G-TP SF15G-TP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 300V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIX3134KA-TP SIX3134KA(SOT-563).pdf
SIX3134KA-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 180mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
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SIX3134KA-TP SIX3134KA(SOT-563).pdf
SIX3134KA-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 180mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3172 Stücke:
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25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
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BZT52C8V2LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 8.2V 100MW SOD882
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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SK52A-LTP SK52A-L_SK5200A-L(SMA).pdf
SK52A-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 20V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
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MCT04N10B-TP MCT04N10B(SOT-223).pdf
MCT04N10B-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
2500+0.33 EUR
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MCT04N10B-TP MCT04N10B(SOT-223).pdf
MCT04N10B-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 5054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 15 Stücke
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BZX84C6V8HE3-TP
BZX84C6V8HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.8V 350MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZX84C6V8HE3-TP
BZX84C6V8HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.8V 350MW SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SMA2EZ27D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB2EZ27D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA3EZ27D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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KBJ1010G-BP KBJ10005G-KBJ1010G(KBJ).pdf
KBJ1010G-BP
Hersteller: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 1KV 10A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5439 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
20+1.96 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.08 EUR
2000+1 EUR
5000+0.9 EUR
Mindestbestellmenge: 6 Stücke
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SF21G-AP SF21G-SF28G(DO-15).pdf
SF21G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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SF21G-TP SF21G-SF28G(DO-15).pdf
SF21G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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TL431BU-TP
Hersteller: Micro Commercial Co
Description: IC REG ADJ VOLT
Produkt ist nicht verfügbar
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TL431BLP-BP TL431BLP%28TO-92%29-V1.pdf
TL431BLP-BP
Hersteller: Micro Commercial Co
Description: IC VREF SHUNT ADJ 0.5% TO92-3
Tolerance: ±0.5%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Programmable
Mounting Type: Through Hole
Voltage - Input: 2.4875V ~ 37V
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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TL431V-TP TL431V.pdf
Hersteller: Micro Commercial Co
Description: IC REG ADJ VOLT
Produkt ist nicht verfügbar
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TL431BLP-AP TL431BLP(TO-92)-V1.pdf
TL431BLP-AP
Hersteller: Micro Commercial Co
Description: IC VREF 36V 0.5% TO92
Produkt ist nicht verfügbar
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1N4005-N-2-1-BP
1N4005-N-2-1-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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1N4005-N-0-2-BP
1N4005-N-0-2-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BZT52C2V7LP-TP BZT52C2V4LP-BZT52C39LP.pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 2.7V 100MW SOD882
Produkt ist nicht verfügbar
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SR104-TP
SR104-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 1A DO-41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Part Status: Obsolete
Produkt ist nicht verfügbar
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MIP15R12P2TN-BP MIP15R12P2TN(P2).pdf
Hersteller: Micro Commercial Co
Description: IGBT MODULES 1200V 15A, P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: P2
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1350 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+126.52 EUR
10+118.85 EUR
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1N4005-N-0-4-AP
1N4005-N-0-4-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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1N4005-N-2-3-AP
1N4005-N-2-3-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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D965-T-AP D965-(T,R).pdf
D965-T-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 22V 5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 500mA, 2V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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SS18E-TP
SS18E-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 80V 1A SMAE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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MCB40P10Y-TP MCB40P10Y(D2PAK).pdf
MCB40P10Y-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 10V
Power Dissipation (Max): 125W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 798 Stücke
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MCB40P10Y-TP MCB40P10Y(D2PAK).pdf
MCB40P10Y-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,D2-PAK
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 125W (Tj)
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
10+4 EUR
100+3.21 EUR
Mindestbestellmenge: 5 Stücke
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RL107GP-AP RL101GP-RL107GP(A-405).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL107GP-TP RL101GP-RL107GP(A-405).pdf
RL107GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RL107-N-2-3-AP RL101_-RL107.pdf
RL107-N-2-3-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL107-N-2-1-BP RL101_-RL107.pdf
RL107-N-2-1-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL107-N-2-4-AP RL101_-RL107.pdf
RL107-N-2-4-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL107-N-2-2-BP RL101_-RL107.pdf
RL107-N-2-2-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL107-TP RL101_-_RL107.pdf
RL107-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RL253-TP RL251-RL257(R-3).pdf
RL253-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 2.5A 200V R3
Produkt ist nicht verfügbar
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RL253M-AP RL251M_-_RL257M.pdf
RL253M-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 2.5A DO15
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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RL253M-TP RL251M_-_RL257M.pdf
RL253M-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 2.5A DO15
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2.5A
Produkt ist nicht verfügbar
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RL253GP-AP RL251GP-RL257GP(R-3).PDF
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 2.5A R-3
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-3
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-3, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 22500 Stücke
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MCU60P06-TP MCU60P06(DPAK).pdf
MCU60P06-TP
Hersteller: Micro Commercial Co
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.01 EUR
Mindestbestellmenge: 2500 Stücke
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MCU60P06-TP MCU60P06(DPAK).pdf
MCU60P06-TP
Hersteller: Micro Commercial Co
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
auf Bestellung 21997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.43 EUR
10+4.19 EUR
100+2.9 EUR
500+2.36 EUR
1000+2.18 EUR
Mindestbestellmenge: 4 Stücke
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EMZ7-TP EMZ7(SOT-563).pdf
EMZ7-TP
Hersteller: Micro Commercial Co
Description: DUAL N+P TRANSISTORS,SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-563
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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EMZ7-TP EMZ7(SOT-563).pdf
EMZ7-TP
Hersteller: Micro Commercial Co
Description: DUAL N+P TRANSISTORS,SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-563
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
36+0.58 EUR
100+0.3 EUR
500+0.24 EUR
1000+0.18 EUR
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BZT52C9V1SHE3-TP
BZT52C9V1SHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 300MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C9V1SHE3-TP
BZT52C9V1SHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C9V1HE3-TP
BZT52C9V1HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C9V1HE3-TP
BZT52C9V1HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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FRA801G-BP FRA801G-FRA807G.pdf
FRA801G-BP
Hersteller: Micro Commercial Co
Description: DIODE FAST REC TO-220AC
Produkt ist nicht verfügbar
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FRA803G-BP FRA801G-FRA807G.pdf
FRA803G-BP
Hersteller: Micro Commercial Co
Description: DIODE FAST REC TO-220AC
Produkt ist nicht verfügbar
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BAV19WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV19WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 250MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.077 EUR
Mindestbestellmenge: 3000 Stücke
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BAV19WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV19WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 250MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
105+0.2 EUR
156+0.13 EUR
500+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 72 Stücke
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1N5995B-TP 1N5985B-1N6016B_DS.pdf
1N5995B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.2V 500MW DO35
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.071 EUR
Mindestbestellmenge: 10000 Stücke
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1N6015B-TP 1N5985B-1N6016B_DS.pdf
1N6015B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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SK210HE3-LTP SK22HE3-L_SK210HE3-L(SMB).pdf
SK210HE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SK210HE3-LTP SK22HE3-L_SK210HE3-L(SMB).pdf
SK210HE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SF25-AP SF21-SF28.pdf
SF25-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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1N4681-TP 1N4678-1N4717_DS.pdf
1N4681-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
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SF15G-AP SF11G-SF18G(DO-41).pdf
SF15G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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SF15G-TP SF11G-SF18G(DO-41).pdf
SF15G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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