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SMA2EZ10D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SB1540-TP Micro Commercial Co Description: DIODE SCHOTTKY 15A DO201AD
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SF14-AP SF14-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF14-TP SF14-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
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MCU40N10-TP MCU40N10-TP Micro Commercial Co Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
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SF21-TP SF21-TP Micro Commercial Co SF21-SF28.pdf Description: DIODE GEN PURP 50V 2A DO15
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GBJL1504-BP Micro Commercial Co GBJL15005-GBJL1510.pdf Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
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33+0.64 EUR
100+0.33 EUR
500+0.23 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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BZT52B27-TP Micro Commercial Co BZT52B2V4-BZT52B75(SOD-123).pdf Description: DIODE ZENER 27V 410MW SOD123
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SF13M-TP Micro Commercial Co SM11M-SF18M_RevB_01-01-13.pdf Description: DIODE GEN PURP 150V 1A DO214AC
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SF13-TP SF13-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
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SF13G-TP SF13G-TP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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SF13G-AP SF13G-AP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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SF13-AP SF13-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
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HER101-TP HER101-TP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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HER101S-TP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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HER101S-AP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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HER101-AP HER101-AP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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MCU40N10AHE3-TP MCU40N10AHE3-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
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7+3.25 EUR
10+2.7 EUR
100+2.15 EUR
500+1.82 EUR
1000+1.55 EUR
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
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5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.55 EUR
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
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MCQ15N10B-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
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21+1 EUR
26+0.81 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.31 EUR
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1N5989B-TP 1N5989B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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10000+0.065 EUR
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FR2504-BP FR2504-BP Micro Commercial Co Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
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SMA3EZ15D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ15D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MCMN2014A-TP MCMN2014A-TP Micro Commercial Co MCMN2014A(DFN2020-6J).pdf Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.31 EUR
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MCMN2014A-TP MCMN2014A-TP Micro Commercial Co MCMN2014A(DFN2020-6J).pdf Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 5602 Stücke:
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24+0.88 EUR
28+0.75 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.35 EUR
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SIC1060P-BP SIC1060P-BP Micro Commercial Co SIC1060P(TO-220AC).pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
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4+6.51 EUR
10+5.47 EUR
100+4.43 EUR
500+4.33 EUR
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SIC0860P-BP SIC0860P-BP Micro Commercial Co SIC0860P(TO-220AC).pdf Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 4996 Stücke:
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3+9.29 EUR
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500+5.62 EUR
1000+4.81 EUR
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SICF0860P-BP SICF0860P-BP Micro Commercial Co SICF0860P(ITO-220AC).pdf Description: DIODE SIL CARB 650V 8A ITO220AC
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MMBZ5244B-TP MMBZ5244B-TP Micro Commercial Co MMBZ5221B-MMBZ5259B(SOT-23).pdf Description: DIODE ZENER 14V 350MW SOT23
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SK5150LHE3-TP SK5150LHE3-TP Micro Commercial Co SK5150LHE3-SK5200LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 150V 5A SMC
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SK5150LHE3-TP SK5150LHE3-TP Micro Commercial Co SK5150LHE3-SK5200LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 150V 5A SMC
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SMB3EZ150D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMA3EZ150D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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MMSZ5239BHE3-TP MMSZ5239BHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5239BHE3-TP MMSZ5239BHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4617-TP 1N4617-TP Micro Commercial Co 1N4614-1N4125(DO-35)_DS.pdf Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
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MCP55H12-BP MCP55H12-BP Micro Commercial Co MCP5H12.pdf Description: MOSFET N-CH
Produkt ist nicht verfügbar
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MCB145N15Y-TP MCB145N15Y-TP Micro Commercial Co MCB145N15Y_Rev3-2_4-9-22.pdf Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 75 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK5150AFL-TP Micro Commercial Co SK52AFL_SK5200AFL(DO-221AC).pdf Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK5150AFL-TP Micro Commercial Co SK52AFL_SK5200AFL(DO-221AC).pdf Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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UMY1N-TP Micro Commercial Co Description: DIODE
Produkt ist nicht verfügbar
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AZ23C4V3HE3-TP AZ23C4V3HE3-TP Micro Commercial Co AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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AZ23C4V3HE3-TP AZ23C4V3HE3-TP Micro Commercial Co AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
35+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
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DZ23C4V3HE3-TP DZ23C4V3HE3-TP Micro Commercial Co DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
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DZ23C4V3HE3-TP DZ23C4V3HE3-TP Micro Commercial Co DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
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MPSA05-BP Micro Commercial Co MPSA05_Rev3-2_12-1-2020.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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SI3139KDWA-TP SI3139KDWA-TP Micro Commercial Co SI3139KDWA(SOT-363).pdf Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SI3139KDWA-TP SI3139KDWA-TP Micro Commercial Co SI3139KDWA(SOT-363).pdf Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
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SMA2EZ10D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1540-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
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SF14-AP SF11_-_SF18.pdf
SF14-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF14-TP SF11_-_SF18.pdf
SF14-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCU40N10-TP
MCU40N10-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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SF21-TP SF21-SF28.pdf
SF21-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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GBJL1504-BP GBJL15005-GBJL1510.pdf
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.1 EUR
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SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
33+0.64 EUR
100+0.33 EUR
500+0.23 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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BZT52B27-TP BZT52B2V4-BZT52B75(SOD-123).pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
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SF13M-TP SM11M-SF18M_RevB_01-01-13.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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SF13-TP SF11_-_SF18.pdf
SF13-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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SF13G-TP SF11G-SF18G(DO-41).pdf
SF13G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SF13G-AP SF11G-SF18G(DO-41).pdf
SF13G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13-AP SF11_-_SF18.pdf
SF13-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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HER101-TP HER101-108(DO-41).pdf
HER101-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-TP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-AP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER101-AP HER101-108(DO-41).pdf
HER101-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MCU40N10AHE3-TP
MCU40N10AHE3-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
10+2.7 EUR
100+2.15 EUR
500+1.82 EUR
1000+1.55 EUR
Mindestbestellmenge: 7 Stücke
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.08 EUR
100+2.11 EUR
500+1.69 EUR
1000+1.55 EUR
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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MCQ15N10B-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
26+0.81 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.31 EUR
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1N5989B-TP 1N5985B-1N6016B_DS.pdf
1N5989B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.065 EUR
Mindestbestellmenge: 10000 Stücke
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FR2504-BP
FR2504-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
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SMA3EZ15D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ15D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MCMN2014A-TP MCMN2014A(DFN2020-6J).pdf
MCMN2014A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
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MCMN2014A-TP MCMN2014A(DFN2020-6J).pdf
MCMN2014A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 5602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
28+0.75 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.35 EUR
Mindestbestellmenge: 24 Stücke
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SIC1060P-BP SIC1060P(TO-220AC).pdf
SIC1060P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.51 EUR
10+5.47 EUR
100+4.43 EUR
500+4.33 EUR
Mindestbestellmenge: 4 Stücke
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SIC0860P-BP SIC0860P(TO-220AC).pdf
SIC0860P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.29 EUR
10+7.81 EUR
100+6.32 EUR
500+5.62 EUR
1000+4.81 EUR
2000+4.53 EUR
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SICF0860P-BP SICF0860P(ITO-220AC).pdf
SICF0860P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A ITO220AC
Produkt ist nicht verfügbar
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MMBZ5244B-TP MMBZ5221B-MMBZ5259B(SOT-23).pdf
MMBZ5244B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 14V 350MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SK5150LHE3-TP SK5150LHE3-SK5200LHE3(DO-214AB).pdf
SK5150LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SK5150LHE3-TP SK5150LHE3-SK5200LHE3(DO-214AB).pdf
SK5150LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
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SMB3EZ150D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA3EZ150D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MMSZ5239BHE3-TP
MMSZ5239BHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MMSZ5239BHE3-TP
MMSZ5239BHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4617-TP 1N4614-1N4125(DO-35)_DS.pdf
1N4617-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
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MCP55H12-BP MCP5H12.pdf
MCP55H12-BP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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MCB145N15Y-TP MCB145N15Y_Rev3-2_4-9-22.pdf
MCB145N15Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 75 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK52AFL_SK5200AFL(DO-221AC).pdf
SK5150AFL-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK52AFL_SK5200AFL(DO-221AC).pdf
SK5150AFL-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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UMY1N-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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AZ23C4V3HE3-TP AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf
AZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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AZ23C4V3HE3-TP AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf
AZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
35+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
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DZ23C4V3HE3-TP DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf
DZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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DZ23C4V3HE3-TP DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf
DZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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MPSA05-BP MPSA05_Rev3-2_12-1-2020.pdf
Hersteller: Micro Commercial Co
Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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SI3139KDWA-TP SI3139KDWA(SOT-363).pdf
SI3139KDWA-TP
Hersteller: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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SI3139KDWA-TP SI3139KDWA(SOT-363).pdf
SI3139KDWA-TP
Hersteller: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 22 Stücke
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