Produkte > MICRO COMMERCIAL CO > Alle Produkte des Herstellers MICRO COMMERCIAL CO (6254) > Seite 58 nach 105
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| BZT52B18-TP | Micro Commercial Co |
Description: DIODE ZENER 18V 410MW SOD123 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS310LHE-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 100V 3A SOD123HECurrent - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SS310LHE-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 100V 3A SOD123HECurrent - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESDPLC5V0AE2-TP | Micro Commercial Co |
Description: TVS DIODE 5.5VWM 15VC 0201-APackaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 0201-A Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESDPLC5V0AE2-TP | Micro Commercial Co |
Description: TVS DIODE 5.5VWM 15VC 0201-APackaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 0201-A Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active |
auf Bestellung 19971 Stücke: Lieferzeit 10-14 Tag (e) |
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FR201GP-AP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 2A DO15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| KSD1616A-G-BP | Micro Commercial Co |
Description: TRANS NPN 120V 1A TO92 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMDT3946HE3-TP | Micro Commercial Co |
Description: TRANS NPN/PNP 40V 200MA SOT-363Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-363 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 500nA, 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMDT3946HE3-TP | Micro Commercial Co |
Description: TRANS NPN/PNP 40V 200MA SOT-363Part Status: Active Supplier Device Package: SOT-363 Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 500nA, 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SS320HE-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 200V 3A SOD123HECurrent - Reverse Leakage @ Vr: 500 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SS320HE-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 200V 3A SOD123HECurrent - Reverse Leakage @ Vr: 500 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMB2EZ10D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SMA2EZ10D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SB1540-TP | Micro Commercial Co | Description: DIODE SCHOTTKY 15A DO201AD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SF14-AP | Micro Commercial Co |
Description: DIODE GEN PURP 200V 1A DO41Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-41 Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SF14-TP | Micro Commercial Co |
Description: DIODE GEN PURP 200V 1A DO41Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCB90N12A-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,D2-PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCB90N12A-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,D2-PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCU40N10-TP | Micro Commercial Co |
Description: MOSFET N-CH 100VDS 20VGS 40A 160 Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 40A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SF21-TP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 2A DO15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GBJL1504-BP | Micro Commercial Co |
Description: DIODE BRIDGE GBJLCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 400 V Supplier Device Package: GBJL Technology: Standard Operating Temperature: -55°C ~ 150°C Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBJL Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SI3139KL3A-TP | Micro Commercial Co |
Description: P-CHANNEL MOSFET,DFN1006-3Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 650mA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3139KL3A-TP | Micro Commercial Co |
Description: P-CHANNEL MOSFET,DFN1006-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 650mA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
auf Bestellung 12473 Stücke: Lieferzeit 10-14 Tag (e) |
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| BZT52B27-TP | Micro Commercial Co |
Description: DIODE ZENER 27V 410MW SOD123 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SF13M-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SF13-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SF13G-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO41Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SF13G-AP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO41Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SF13-AP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 1A DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HER101-TP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A DO41Current - Reverse Leakage @ Vr: 5 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| HER101S-TP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A A-405Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: A-405 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 mA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| HER101S-AP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A A-405Current - Reverse Leakage @ Vr: 5 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: A-405 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HER101-AP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A DO41Current - Reverse Leakage @ Vr: 5 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCU40N10AHE3-TP | Micro Commercial Co |
Description: MOSFET N-CHANNEL MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.25W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCU65N10YA-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DPAKInput Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCU65N10YA-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DPAKInput Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4818 Stücke: Lieferzeit 10-14 Tag (e) |
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MCU65N10Y-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DPAKInput Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 96W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCU65N10Y-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DPAKInput Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 96W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2087 Stücke: Lieferzeit 10-14 Tag (e) |
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SI0205-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,SOT-523 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI0205-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,SOT-523 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MCQ15N10B-TP | Micro Commercial Co |
Description: MOSFET N-CHANNEL MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 4W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MCMN2014HE3-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN2020-6LEPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN2020-6LE Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCMN2014HE3-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN2020-6LEPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN2020-6LE Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V |
auf Bestellung 2573 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5989B-TP | Micro Commercial Co |
Description: DIODE ZENER 3.6V 500MW DO35Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 15 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Power - Max: 500 mW Part Status: Obsolete Supplier Device Package: DO-35 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FR2504-BP | Micro Commercial Co | Description: DIODE GEN PURP 400V 25A TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMA3EZ15D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SMB3EZ15D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MCMN2014A-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN2020-6JInput Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020-6J Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 2.2W Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MCMN2014A-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN2020-6JInput Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020-6J Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 2.2W Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5602 Stücke: Lieferzeit 10-14 Tag (e) |
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SIC1060P-BP | Micro Commercial Co |
Description: DIODE SIL CARB 650V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 36pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 44 µA @ 650 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIC0860P-BP | Micro Commercial Co |
Description: DIODE SIL CARB 650V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 30pF @ 400V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V |
auf Bestellung 4996 Stücke: Lieferzeit 10-14 Tag (e) |
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SICF0860P-BP | Micro Commercial Co |
Description: DIODE SIL CARB 650V 8A ITO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBZ5244B-TP | Micro Commercial Co |
Description: DIODE ZENER 14V 350MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SK5150LHE3-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 150V 5A SMC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SK5150LHE3-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 150V 5A SMC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMB3EZ150D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SMA3EZ150D5-TP | Micro Commercial Co | Description: DIODE ZENER DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMSZ5239BHE3-TP | Micro Commercial Co |
Description: DIODE ZENER 9.1V 500MW SOD123 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 3 µA @ 7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMSZ5239BHE3-TP | Micro Commercial Co |
Description: DIODE ZENER 9.1V 500MW SOD123 Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 3 µA @ 7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 10 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N4617-TP | Micro Commercial Co |
Description: DIODE ZENER 2.4V 500MW DO35Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Obsolete Supplier Device Package: DO-35 Impedance (Max) (Zzt): 1400 Ohms Voltage - Zener (Nom) (Vz): 2.4 V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BZT52B18-TP |
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Hersteller: Micro Commercial Co
Description: DIODE ZENER 18V 410MW SOD123
Description: DIODE ZENER 18V 410MW SOD123
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 43+ | 0.49 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| SS310LHE-TP |
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Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS310LHE-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESDPLC5V0AE2-TP |
![]() |
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESDPLC5V0AE2-TP |
![]() |
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 19971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.14 EUR |
| FR201GP-AP |
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Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1616A-G-BP |
![]() |
Hersteller: Micro Commercial Co
Description: TRANS NPN 120V 1A TO92
Description: TRANS NPN 120V 1A TO92
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMDT3946HE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS NPN/PNP 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMDT3946HE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Part Status: Active
Supplier Device Package: SOT-363
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP 40V 200MA SOT-363
Part Status: Active
Supplier Device Package: SOT-363
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS320HE-TP |
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Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS320HE-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMB2EZ10D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMA2EZ10D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB1540-TP |
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 15A DO201AD
Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF14-AP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Description: DIODE GEN PURP 200V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SF14-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MCB90N12A-TP |
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Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MCB90N12A-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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| MCU40N10-TP |
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100VDS 20VGS 40A 160
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 100VDS 20VGS 40A 160
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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| SF21-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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| GBJL1504-BP |
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Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: GBJL
Technology: Standard
Operating Temperature: -55°C ~ 150°C
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJL
Packaging: Bulk
Description: DIODE BRIDGE GBJL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: GBJL
Technology: Standard
Operating Temperature: -55°C ~ 150°C
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJL
Packaging: Bulk
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| SI3139KL3A-TP |
![]() |
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Description: P-CHANNEL MOSFET,DFN1006-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.1 EUR |
| SI3139KL3A-TP |
![]() |
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: P-CHANNEL MOSFET,DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |
| BZT52B27-TP |
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Hersteller: Micro Commercial Co
Description: DIODE ZENER 27V 410MW SOD123
Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SF13M-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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| SF13-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SF13G-TP |
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Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE GEN PURP 150V 1A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| SF13G-AP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 150V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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| SF13-AP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| HER101-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 1A DO41
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| HER101S-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Description: DIODE GEN PURP 50V 1A A-405
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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| HER101S-AP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 50V 1A A-405
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HER101-AP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 50V 1A DO41
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCU40N10AHE3-TP |
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MCU65N10YA-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Part Status: Active
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCU65N10YA-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.7 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.55 EUR |
| MCU65N10Y-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCU65N10Y-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.55 EUR |
| SI0205-TP |
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Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI0205-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCQ15N10B-TP |
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMN2014HE3-TP |
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Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCMN2014HE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.31 EUR |
| 1N5989B-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.065 EUR |
| FR2504-BP |
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 25A TO220AC
Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMA3EZ15D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMB3EZ15D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMN2014A-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020-6J
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: N-CHANNEL MOSFET,DFN2020-6J
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020-6J
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.31 EUR |
| MCMN2014A-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020-6J
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,DFN2020-6J
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020-6J
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.35 EUR |
| SIC1060P-BP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.51 EUR |
| 10+ | 5.47 EUR |
| 100+ | 4.43 EUR |
| 500+ | 4.33 EUR |
| SIC0860P-BP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.29 EUR |
| 10+ | 7.81 EUR |
| 100+ | 6.32 EUR |
| 500+ | 5.62 EUR |
| 1000+ | 4.81 EUR |
| 2000+ | 4.53 EUR |
| SICF0860P-BP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A ITO220AC
Description: DIODE SIL CARB 650V 8A ITO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5244B-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE ZENER 14V 350MW SOT23
Description: DIODE ZENER 14V 350MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SK5150LHE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SK5150LHE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMB3EZ150D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMA3EZ150D5-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5239BHE3-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5239BHE3-TP |
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Description: DIODE ZENER 9.1V 500MW SOD123
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4617-TP |
![]() |
Hersteller: Micro Commercial Co
Description: DIODE ZENER 2.4V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 2.4V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH







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