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BZT52B6V2JSHE3-TP BZT52B6V2JSHE3-TP Micro Commercial Co Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2JSHE3-TP BZT52B6V2JSHE3-TP Micro Commercial Co Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2HE3-TP BZT52B6V2HE3-TP Micro Commercial Co BZT52B3V6HE3-BZT52B47HE3(SOD-123).pdf Description: DIODE ZENER 6.2V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2HE3-TP BZT52B6V2HE3-TP Micro Commercial Co BZT52B3V6HE3-BZT52B47HE3(SOD-123).pdf Description: DIODE ZENER 6.2V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
76+0.23 EUR
122+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
Mindestbestellmenge: 46
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GBJ3508L-BP GBJ3508L-BP Micro Commercial Co GBJ3508L(GBJ).pdf Description: BRIDGE RECTIFIERS 800V 35A,GBJ
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1500 Stücke:
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1500+1.72 EUR
Mindestbestellmenge: 1500
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GBJ3508L-BP GBJ3508L-BP Micro Commercial Co GBJ3508L(GBJ).pdf Description: BRIDGE RECTIFIERS 800V 35A,GBJ
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
10+3.13 EUR
100+2.51 EUR
500+2.07 EUR
Mindestbestellmenge: 6
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BZT52B8V7JS-TP Micro Commercial Co Description: DIODE ZENER 8.7V 200MW SOD323
Tolerance: ±1.95%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
Produkt ist nicht verfügbar
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SMA3EZ13D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ130D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMA3EZ130D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ13D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SB1245-TP SB1245-TP Micro Commercial Co Description: DIODE SCHOTTKY 12A DO-201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar
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MCAC95N065Y-TP MCAC95N065Y-TP Micro Commercial Co MCAC95N065Y(DFN5060).pdf Description: MOSFET N-CH DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
Produkt ist nicht verfügbar
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MCAC95N065Y-TP MCAC95N065Y-TP Micro Commercial Co MCAC95N065Y(DFN5060).pdf Description: MOSFET N-CH DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+2.62 EUR
100+1.8 EUR
500+1.44 EUR
1000+1.33 EUR
2000+1.23 EUR
Mindestbestellmenge: 5
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UM6X1NA-TP UM6X1NA-TP Micro Commercial Co UM6X1NA(SOT-563).pdf Description: MOSFET 2N-CH 30V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.082 EUR
Mindestbestellmenge: 3000
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UM6X1NA-TP UM6X1NA-TP Micro Commercial Co UM6X1NA(SOT-563).pdf Description: MOSFET 2N-CH 30V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3676 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
53+0.33 EUR
109+0.16 EUR
500+0.14 EUR
1000+0.094 EUR
Mindestbestellmenge: 38
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BZX84B36HE3-TP BZX84B36HE3-TP Micro Commercial Co BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf Description: 350MW ZENER SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.083 EUR
6000+0.073 EUR
Mindestbestellmenge: 3000
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BZX84B36HE3-TP BZX84B36HE3-TP Micro Commercial Co BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf Description: 350MW ZENER SOT-23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.092 EUR
Mindestbestellmenge: 38
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FR606GP-AP FR606GP-AP Micro Commercial Co FR601GP-FR607GP(R-6).pdf Description: DIODE GEN PURP 800V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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FR606GP-TP FR606GP-TP Micro Commercial Co FR601GP-FR607GP(R-6).pdf Description: DIODE GEN PURP 800V 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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BZT52B18-TP Micro Commercial Co BZT52B2V4-BZT52B75(SOD-123).pdf Description: DIODE ZENER 18V 410MW SOD123
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.088 EUR
Mindestbestellmenge: 3000
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BZT52B18-TP Micro Commercial Co BZT52B2V4-BZT52B75(SOD-123).pdf Description: DIODE ZENER 18V 410MW SOD123
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
43+0.41 EUR
100+0.22 EUR
500+0.14 EUR
1000+0.097 EUR
Mindestbestellmenge: 36
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SS310LHE-TP SS310LHE-TP Micro Commercial Co SS34LHE-SS310LHE.pdf Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SS310LHE-TP SS310LHE-TP Micro Commercial Co SS34LHE-SS310LHE.pdf Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2-TP Micro Commercial Co ESDPLC5V0AE2(0201-A).pdf Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
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ESDPLC5V0AE2-TP ESDPLC5V0AE2-TP Micro Commercial Co ESDPLC5V0AE2(0201-A).pdf Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 19971 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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FR201GP-AP FR201GP-AP Micro Commercial Co FR201GP-FR207GP(DO-15).pdf Description: DIODE GEN PURP 50V 2A DO15
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KSD1616A-G-BP Micro Commercial Co KSD1616_16A-Y_G_Rev3-2_12-1-2020.pdf Description: TRANS NPN 120V 1A TO92
Produkt ist nicht verfügbar
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MMDT3946HE3-TP MMDT3946HE3-TP Micro Commercial Co MMDT3946HE3(SOT-363).pdf Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMDT3946HE3-TP MMDT3946HE3-TP Micro Commercial Co MMDT3946HE3(SOT-363).pdf Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS320HE-TP SS320HE-TP Micro Commercial Co SS32HE_thru_SS320HE.pdf Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SS320HE-TP SS320HE-TP Micro Commercial Co SS32HE_thru_SS320HE.pdf Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SMB2EZ10D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA2EZ10D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1540-TP Micro Commercial Co Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
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SF14-AP SF14-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF14-TP SF14-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCU40N10-TP MCU40N10-TP Micro Commercial Co Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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SF21-TP SF21-TP Micro Commercial Co SF21-SF28.pdf Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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GBJL1504-BP Micro Commercial Co GBJL15005-GBJL1510.pdf Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.085 EUR
Mindestbestellmenge: 10000
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
33+0.54 EUR
100+0.28 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 28
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BZT52B27-TP Micro Commercial Co BZT52B2V4-BZT52B75(SOD-123).pdf Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
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SF13M-TP Micro Commercial Co SM11M-SF18M_RevB_01-01-13.pdf Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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SF13-TP SF13-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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SF13G-TP SF13G-TP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13G-AP SF13G-AP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13-AP SF13-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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HER101-TP HER101-TP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-TP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-AP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101-AP HER101-AP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MCU40N10AHE3-TP MCU40N10AHE3-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
Mindestbestellmenge: 7
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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MMSZ5230BHE3-TP MMSZ5230BHE3-TP Micro Commercial Co Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.085 EUR
6000+0.079 EUR
Mindestbestellmenge: 3000
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BZT52B6V2JSHE3-TP
BZT52B6V2JSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2JSHE3-TP
BZT52B6V2JSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.2V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2HE3-TP BZT52B3V6HE3-BZT52B47HE3(SOD-123).pdf
BZT52B6V2HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.2V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V2HE3-TP BZT52B3V6HE3-BZT52B47HE3(SOD-123).pdf
BZT52B6V2HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 6.2V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
76+0.23 EUR
122+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
Mindestbestellmenge: 46
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GBJ3508L-BP GBJ3508L(GBJ).pdf
GBJ3508L-BP
Hersteller: Micro Commercial Co
Description: BRIDGE RECTIFIERS 800V 35A,GBJ
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.72 EUR
Mindestbestellmenge: 1500
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GBJ3508L-BP GBJ3508L(GBJ).pdf
GBJ3508L-BP
Hersteller: Micro Commercial Co
Description: BRIDGE RECTIFIERS 800V 35A,GBJ
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+3.13 EUR
100+2.51 EUR
500+2.07 EUR
Mindestbestellmenge: 6
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BZT52B8V7JS-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 8.7V 200MW SOD323
Tolerance: ±1.95%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
Produkt ist nicht verfügbar
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SMA3EZ13D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ130D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA3EZ130D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ13D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1245-TP
SB1245-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 12A DO-201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar
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MCAC95N065Y-TP MCAC95N065Y(DFN5060).pdf
MCAC95N065Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
Produkt ist nicht verfügbar
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MCAC95N065Y-TP MCAC95N065Y(DFN5060).pdf
MCAC95N065Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.62 EUR
100+1.8 EUR
500+1.44 EUR
1000+1.33 EUR
2000+1.23 EUR
Mindestbestellmenge: 5
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UM6X1NA-TP UM6X1NA(SOT-563).pdf
UM6X1NA-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 30V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.082 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
UM6X1NA-TP UM6X1NA(SOT-563).pdf
UM6X1NA-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 30V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
53+0.33 EUR
109+0.16 EUR
500+0.14 EUR
1000+0.094 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B36HE3-TP BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf
BZX84B36HE3-TP
Hersteller: Micro Commercial Co
Description: 350MW ZENER SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.083 EUR
6000+0.073 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B36HE3-TP BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf
BZX84B36HE3-TP
Hersteller: Micro Commercial Co
Description: 350MW ZENER SOT-23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.092 EUR
Mindestbestellmenge: 38
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FR606GP-AP FR601GP-FR607GP(R-6).pdf
FR606GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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FR606GP-TP FR601GP-FR607GP(R-6).pdf
FR606GP-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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BZT52B18-TP BZT52B2V4-BZT52B75(SOD-123).pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 18V 410MW SOD123
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.088 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B18-TP BZT52B2V4-BZT52B75(SOD-123).pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 18V 410MW SOD123
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
43+0.41 EUR
100+0.22 EUR
500+0.14 EUR
1000+0.097 EUR
Mindestbestellmenge: 36
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SS310LHE-TP SS34LHE-SS310LHE.pdf
SS310LHE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SS310LHE-TP SS34LHE-SS310LHE.pdf
SS310LHE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2(0201-A).pdf
ESDPLC5V0AE2-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2(0201-A).pdf
ESDPLC5V0AE2-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 19971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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FR201GP-AP FR201GP-FR207GP(DO-15).pdf
FR201GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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KSD1616A-G-BP KSD1616_16A-Y_G_Rev3-2_12-1-2020.pdf
Hersteller: Micro Commercial Co
Description: TRANS NPN 120V 1A TO92
Produkt ist nicht verfügbar
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MMDT3946HE3-TP MMDT3946HE3(SOT-363).pdf
MMDT3946HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMDT3946HE3-TP MMDT3946HE3(SOT-363).pdf
MMDT3946HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS320HE-TP SS32HE_thru_SS320HE.pdf
SS320HE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SS320HE-TP SS32HE_thru_SS320HE.pdf
SS320HE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMB2EZ10D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA2EZ10D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1540-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SF14-AP SF11_-_SF18.pdf
SF14-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF14-TP SF11_-_SF18.pdf
SF14-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCU40N10-TP
MCU40N10-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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SF21-TP SF21-SF28.pdf
SF21-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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GBJL1504-BP GBJL15005-GBJL1510.pdf
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.085 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
33+0.54 EUR
100+0.28 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 28
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BZT52B27-TP BZT52B2V4-BZT52B75(SOD-123).pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
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SF13M-TP SM11M-SF18M_RevB_01-01-13.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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SF13-TP SF11_-_SF18.pdf
SF13-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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SF13G-TP SF11G-SF18G(DO-41).pdf
SF13G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13G-AP SF11G-SF18G(DO-41).pdf
SF13G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13-AP SF11_-_SF18.pdf
SF13-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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HER101-TP HER101-108(DO-41).pdf
HER101-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-TP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-AP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101-AP HER101-108(DO-41).pdf
HER101-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MCU40N10AHE3-TP
MCU40N10AHE3-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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MMSZ5230BHE3-TP
MMSZ5230BHE3-TP
Hersteller: Micro Commercial Co
Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.079 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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