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MCU110N06YA-TP MCU110N06YA-TP Micro Commercial Co MCU110N06YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+2.16 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.23 EUR
Mindestbestellmenge: 7
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SS310LHE-TP SS310LHE-TP Micro Commercial Co SS34LHE-SS310LHE.pdf Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SS310LHE-TP SS310LHE-TP Micro Commercial Co SS34LHE-SS310LHE.pdf Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2-TP Micro Commercial Co ESDPLC5V0AE2(0201-A).pdf Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
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ESDPLC5V0AE2-TP ESDPLC5V0AE2-TP Micro Commercial Co ESDPLC5V0AE2(0201-A).pdf Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 19971 Stücke:
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26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
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FR201GP-AP FR201GP-AP Micro Commercial Co FR201GP-FR207GP(DO-15).pdf Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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KSD1616A-G-BP Micro Commercial Co KSD1616_16A-Y_G_Rev3-2_12-1-2020.pdf Description: TRANS NPN 120V 1A TO92
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MCAC38N10YA-TP MCAC38N10YA-TP Micro Commercial Co MCAC38N10YA(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
auf Bestellung 20000 Stücke:
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10000+0.63 EUR
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MCAC38N10YA-TP MCAC38N10YA-TP Micro Commercial Co MCAC38N10YA(DFN5060).pdf Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
auf Bestellung 29265 Stücke:
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11+1.72 EUR
13+1.41 EUR
100+1.1 EUR
500+0.86 EUR
1000+0.79 EUR
2000+0.73 EUR
Mindestbestellmenge: 11
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MCAC68N03Y-TP MCAC68N03Y-TP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
Produkt ist nicht verfügbar
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MCAC68N03Y-TP MCAC68N03Y-TP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
auf Bestellung 6726 Stücke:
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12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
2000+0.39 EUR
Mindestbestellmenge: 12
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MMDT3946HE3-TP MMDT3946HE3-TP Micro Commercial Co MMDT3946HE3(SOT-363).pdf Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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MMDT3946HE3-TP MMDT3946HE3-TP Micro Commercial Co MMDT3946HE3(SOT-363).pdf Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS320HE-TP SS320HE-TP Micro Commercial Co SS32HE_thru_SS320HE.pdf Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SS320HE-TP SS320HE-TP Micro Commercial Co SS32HE_thru_SS320HE.pdf Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SMB2EZ10D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA2EZ10D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1540-TP Micro Commercial Co Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
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SF14-AP SF14-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF14-TP SF14-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
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MCB90N12A-TP MCB90N12A-TP Micro Commercial Co MCB90N12A(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
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MCU40N10-TP MCU40N10-TP Micro Commercial Co Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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SF21-TP SF21-TP Micro Commercial Co SF21-SF28.pdf Description: DIODE GEN PURP 50V 2A DO15
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GBJL1504-BP Micro Commercial Co GBJL15005-GBJL1510.pdf Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
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10000+0.085 EUR
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SI3139KL3A-TP SI3139KL3A-TP Micro Commercial Co SI3139KL3A(DFN1006-3).pdf Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 12473 Stücke:
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28+0.65 EUR
33+0.54 EUR
100+0.28 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 28
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BZT52B27-TP Micro Commercial Co BZT52B2V4-BZT52B75(SOD-123).pdf Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
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SF13M-TP Micro Commercial Co SM11M-SF18M_RevB_01-01-13.pdf Description: DIODE GEN PURP 150V 1A DO214AC
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SF13-TP SF13-TP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
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SF13G-TP SF13G-TP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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SF13G-AP SF13G-AP Micro Commercial Co SF11G-SF18G(DO-41).pdf Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13-AP SF13-AP Micro Commercial Co SF11_-_SF18.pdf Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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HER101-TP HER101-TP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-TP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-AP Micro Commercial Co HER101S-HER108S.pdf Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101-AP HER101-AP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MIW30N65FA-BP MIW30N65FA-BP Micro Commercial Co MIW30N65FA(TO-247AB).pdf Description: IGBT 650V 30A,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1796 Stücke:
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2+11.28 EUR
10+7.59 EUR
100+5.51 EUR
500+4.62 EUR
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MCU40N10AHE3-TP MCU40N10AHE3-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
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5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
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MMSZ5230BHE3-TP MMSZ5230BHE3-TP Micro Commercial Co Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.085 EUR
6000+0.079 EUR
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MMSZ5230BHE3-TP MMSZ5230BHE3-TP Micro Commercial Co Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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MCQ15N10B-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.26 EUR
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1N5989B-TP 1N5989B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 10000 Stücke:
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10000+0.055 EUR
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SMCJ250CAL-TP SMCJ250CAL-TP Micro Commercial Co SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ250CAL-TP Micro Commercial Co SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MCAC60N150Y-TP MCAC60N150Y-TP Micro Commercial Co MCAC60N150Y_Rev3-4_4-9-22.pdf Description: MOSFET N-CH 150 60A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 75 V
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04-TP Micro Commercial Co MCGD25N04(DFN3333-D).pdf Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04-TP Micro Commercial Co MCGD25N04(DFN3333-D).pdf Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
16+1.14 EUR
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ESD1851P6-TP ESD1851P6-TP Micro Commercial Co ESD0751P6~ESD1851P6(DFN1610-2).pdf Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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ESD1851P6-TP ESD1851P6-TP Micro Commercial Co ESD0751P6~ESD1851P6(DFN1610-2).pdf Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 89305 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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FR2504-BP FR2504-BP Micro Commercial Co Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
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SMA3EZ15D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MCU110N06YA-TP MCU110N06YA(DPAK).pdf
MCU110N06YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Power Dissipation (Max): 89W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+2.16 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.23 EUR
Mindestbestellmenge: 7
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SS310LHE-TP SS34LHE-SS310LHE.pdf
SS310LHE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SS310LHE-TP SS34LHE-SS310LHE.pdf
SS310LHE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2(0201-A).pdf
ESDPLC5V0AE2-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESDPLC5V0AE2-TP ESDPLC5V0AE2(0201-A).pdf
ESDPLC5V0AE2-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5.5VWM 15VC 0201-A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 19971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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FR201GP-AP FR201GP-FR207GP(DO-15).pdf
FR201GP-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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KSD1616A-G-BP KSD1616_16A-Y_G_Rev3-2_12-1-2020.pdf
Hersteller: Micro Commercial Co
Description: TRANS NPN 120V 1A TO92
Produkt ist nicht verfügbar
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MCAC38N10YA-TP MCAC38N10YA(DFN5060).pdf
MCAC38N10YA-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.65 EUR
10000+0.63 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
MCAC38N10YA-TP MCAC38N10YA(DFN5060).pdf
MCAC38N10YA-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100 38A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
auf Bestellung 29265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
13+1.41 EUR
100+1.1 EUR
500+0.86 EUR
1000+0.79 EUR
2000+0.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MCAC68N03Y-TP
MCAC68N03Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
Produkt ist nicht verfügbar
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MCAC68N03Y-TP
MCAC68N03Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V
auf Bestellung 6726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
2000+0.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MMDT3946HE3-TP MMDT3946HE3(SOT-363).pdf
MMDT3946HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMDT3946HE3-TP MMDT3946HE3(SOT-363).pdf
MMDT3946HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN/PNP 40V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS320HE-TP SS32HE_thru_SS320HE.pdf
SS320HE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SS320HE-TP SS32HE_thru_SS320HE.pdf
SS320HE-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 200V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
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SMB2EZ10D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA2EZ10D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SB1540-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 15A DO201AD
Produkt ist nicht verfügbar
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SF14-AP SF11_-_SF18.pdf
SF14-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SF14-TP SF11_-_SF18.pdf
SF14-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCB90N12A-TP MCB90N12A(D2-PAK).pdf
MCB90N12A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,D2-PAK
Produkt ist nicht verfügbar
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MCU40N10-TP
MCU40N10-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 100VDS 20VGS 40A 160
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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SF21-TP SF21-SF28.pdf
SF21-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
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GBJL1504-BP GBJL15005-GBJL1510.pdf
Hersteller: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.085 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
SI3139KL3A-TP SI3139KL3A(DFN1006-3).pdf
SI3139KL3A-TP
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
33+0.54 EUR
100+0.28 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BZT52B27-TP BZT52B2V4-BZT52B75(SOD-123).pdf
Hersteller: Micro Commercial Co
Description: DIODE ZENER 27V 410MW SOD123
Produkt ist nicht verfügbar
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SF13M-TP SM11M-SF18M_RevB_01-01-13.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO214AC
Produkt ist nicht verfügbar
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SF13-TP SF11_-_SF18.pdf
SF13-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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SF13G-TP SF11G-SF18G(DO-41).pdf
SF13G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13G-AP SF11G-SF18G(DO-41).pdf
SF13G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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SF13-AP SF11_-_SF18.pdf
SF13-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 150V 1A DO41
Produkt ist nicht verfügbar
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HER101-TP HER101-108(DO-41).pdf
HER101-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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HER101S-TP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER101S-AP HER101S-HER108S.pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER101-AP HER101-108(DO-41).pdf
HER101-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MIW30N65FA-BP MIW30N65FA(TO-247AB).pdf
MIW30N65FA-BP
Hersteller: Micro Commercial Co
Description: IGBT 650V 30A,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.28 EUR
10+7.59 EUR
100+5.51 EUR
500+4.62 EUR
Mindestbestellmenge: 2
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MCU40N10AHE3-TP
MCU40N10AHE3-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
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MMSZ5230BHE3-TP
MMSZ5230BHE3-TP
Hersteller: Micro Commercial Co
Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.079 EUR
Mindestbestellmenge: 3000
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MMSZ5230BHE3-TP
MMSZ5230BHE3-TP
Hersteller: Micro Commercial Co
Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
44+0.4 EUR
Mindestbestellmenge: 44
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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MCQ15N10B-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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1N5989B-TP 1N5985B-1N6016B_DS.pdf
1N5989B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.055 EUR
Mindestbestellmenge: 10000
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SMCJ250CAL-TP SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf
SMCJ250CAL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf
SMCJ250CAL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MCAC60N150Y-TP MCAC60N150Y_Rev3-4_4-9-22.pdf
MCAC60N150Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 150 60A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 75 V
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04(DFN3333-D).pdf
MCGD25N04-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04(DFN3333-D).pdf
MCGD25N04-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
Mindestbestellmenge: 13
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ESD1851P6-TP ESD0751P6~ESD1851P6(DFN1610-2).pdf
ESD1851P6-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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ESD1851P6-TP ESD0751P6~ESD1851P6(DFN1610-2).pdf
ESD1851P6-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 89305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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FR2504-BP
FR2504-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
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SMA3EZ15D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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