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HER101-AP HER101-AP Micro Commercial Co HER101-108(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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MIW30N65FA-BP MIW30N65FA-BP Micro Commercial Co MIW30N65FA(TO-247AB).pdf Description: IGBT 650V 30A,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.28 EUR
10+7.59 EUR
100+5.51 EUR
500+4.62 EUR
Mindestbestellmenge: 2
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MCU40N10AHE3-TP MCU40N10AHE3-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA-TP Micro Commercial Co MCU65N10YA(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
Mindestbestellmenge: 7
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y-TP Micro Commercial Co MCU65N10Y(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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MMSZ5230BHE3-TP MMSZ5230BHE3-TP Micro Commercial Co Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.085 EUR
6000+0.079 EUR
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MMSZ5230BHE3-TP MMSZ5230BHE3-TP Micro Commercial Co Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
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RB520S-30HE3-TP RB520S-30HE3-TP Micro Commercial Co RB520S-30HE3(SOD-523).pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB520S-30HE3-TP RB520S-30HE3-TP Micro Commercial Co RB520S-30HE3(SOD-523).pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
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SI0205-TP SI0205-TP Micro Commercial Co SI0205(SOT-523).pdf Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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MCQ15N10B-TP Micro Commercial Co Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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BZX84B12HE3-TP BZX84B12HE3-TP Micro Commercial Co BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf Description: 350MW ZENER SOT-23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.075 EUR
Mindestbestellmenge: 3000
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BZX84B12HE3-TP BZX84B12HE3-TP Micro Commercial Co BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf Description: 350MW ZENER SOT-23
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3-TP Micro Commercial Co MCMN2014HE3(DFN2020-6LE).pdf Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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1N5989B-TP 1N5989B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.055 EUR
Mindestbestellmenge: 10000
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SMA6J5.0AFL-TP SMA6J5.0AFL-TP Micro Commercial Co Description: TVS DIODE 5VWM 9.2VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-221AC (SMA-FL)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMA6J5.0AFL-TP SMA6J5.0AFL-TP Micro Commercial Co Description: TVS DIODE 5VWM 9.2VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-221AC (SMA-FL)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 16069 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
36+0.5 EUR
100+0.3 EUR
500+0.28 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 28
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SMA6J5.0A-TP SMA6J5.0A-TP Micro Commercial Co SMA6J5.0A-SMA6J58CA(SMA).pdf Description: TVS DIODE 5VWM 9.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMA6J5.0A-TP SMA6J5.0A-TP Micro Commercial Co SMA6J5.0A-SMA6J58CA(SMA).pdf Description: TVS DIODE 5VWM 9.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ250CAL-TP Micro Commercial Co SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ250CAL-TP Micro Commercial Co SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MCAC60N150Y-TP MCAC60N150Y-TP Micro Commercial Co MCAC60N150Y_Rev3-4_4-9-22.pdf Description: MOSFET N-CH 150 60A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 75 V
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04-TP Micro Commercial Co MCGD25N04(DFN3333-D).pdf Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04-TP Micro Commercial Co MCGD25N04(DFN3333-D).pdf Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
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ESD1851P6-TP ESD1851P6-TP Micro Commercial Co ESD0751P6~ESD1851P6(DFN1610-2).pdf Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
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ESD1851P6-TP ESD1851P6-TP Micro Commercial Co ESD0751P6~ESD1851P6(DFN1610-2).pdf Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
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FR2504-BP FR2504-BP Micro Commercial Co Description: DIODE GEN PURP 400V 25A TO220AC
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SMA3EZ15D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMB3EZ15D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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MCMN2014A-TP MCMN2014A-TP Micro Commercial Co MCMN2014A(DFN2020-6J).pdf Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
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MCMN2014A-TP MCMN2014A-TP Micro Commercial Co MCMN2014A(DFN2020-6J).pdf Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
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SIC1060P-BP SIC1060P-BP Micro Commercial Co SIC1060P(TO-220AC).pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
auf Bestellung 5000 Stücke:
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SIC0860P-BP SIC0860P-BP Micro Commercial Co SIC0860P(TO-220AC).pdf Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
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SICF0860P-BP SICF0860P-BP Micro Commercial Co SICF0860P(ITO-220AC).pdf Description: DIODE SIL CARB 650V 8A ITO220AC
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MMBZ5244B-TP MMBZ5244B-TP Micro Commercial Co MMBZ5221B-MMBZ5259B(SOT-23).pdf Description: DIODE ZENER 14V 350MW SOT23
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SK5150LHE3-TP SK5150LHE3-TP Micro Commercial Co SK5150LHE3-SK5200LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 150V 5A SMC
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SK5150LHE3-TP SK5150LHE3-TP Micro Commercial Co SK5150LHE3-SK5200LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 150V 5A SMC
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SMB3EZ150D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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SMA3EZ150D5-TP Micro Commercial Co Description: DIODE ZENER DO214AA
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MMSZ5239BHE3-TP MMSZ5239BHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
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MMSZ5239BHE3-TP MMSZ5239BHE3-TP Micro Commercial Co Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4617-TP 1N4617-TP Micro Commercial Co 1N4614-1N4125(DO-35)_DS.pdf Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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MCP55H12-BP MCP55H12-BP Micro Commercial Co MCP5H12.pdf Description: MOSFET N-CH
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MCB145N15Y-TP MCB145N15Y-TP Micro Commercial Co MCB145N15Y_Rev3-2_4-9-22.pdf Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 75 V
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SK5150AFL-TP SK5150AFL-TP Micro Commercial Co SK52AFL_SK5200AFL(DO-221AC).pdf Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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SK5150AFL-TP SK5150AFL-TP Micro Commercial Co SK52AFL_SK5200AFL(DO-221AC).pdf Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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UMY1N-TP Micro Commercial Co Description: DIODE
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AZ23C4V3HE3-TP AZ23C4V3HE3-TP Micro Commercial Co AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
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3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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AZ23C4V3HE3-TP AZ23C4V3HE3-TP Micro Commercial Co AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
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DZ23C4V3HE3-TP DZ23C4V3HE3-TP Micro Commercial Co DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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DZ23C4V3HE3-TP DZ23C4V3HE3-TP Micro Commercial Co DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf Description: 300MW ZENER SOT-23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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500+0.16 EUR
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MPSA05-BP Micro Commercial Co MPSA05_Rev3-2_12-1-2020.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MCGD30P02-TP MCGD30P02-TP Micro Commercial Co MCGD30P02(DFN3333).pdf Description: DUAL P-CHANNEL MOSFET, DFN3333-D
auf Bestellung 10000 Stücke:
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MCGD30P02-TP MCGD30P02-TP Micro Commercial Co MCGD30P02(DFN3333).pdf Description: DUAL P-CHANNEL MOSFET, DFN3333-D
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15+1.25 EUR
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SI3139KDWA-TP SI3139KDWA-TP Micro Commercial Co SI3139KDWA(SOT-363).pdf Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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SI3139KDWA-TP SI3139KDWA-TP Micro Commercial Co SI3139KDWA(SOT-363).pdf Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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22+0.83 EUR
29+0.61 EUR
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HER101-AP HER101-108(DO-41).pdf
HER101-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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MIW30N65FA-BP MIW30N65FA(TO-247AB).pdf
MIW30N65FA-BP
Hersteller: Micro Commercial Co
Description: IGBT 650V 30A,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1796 Stücke:
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Anzahl Preis
2+11.28 EUR
10+7.59 EUR
100+5.51 EUR
500+4.62 EUR
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MCU40N10AHE3-TP
MCU40N10AHE3-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10YA-TP MCU65N10YA(DPAK).pdf
MCU65N10YA-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 96W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
500+1.53 EUR
1000+1.3 EUR
Mindestbestellmenge: 7
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Produkt ist nicht verfügbar
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MCU65N10Y-TP MCU65N10Y(DPAK).pdf
MCU65N10Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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MMSZ5230BHE3-TP
MMSZ5230BHE3-TP
Hersteller: Micro Commercial Co
Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.079 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5230BHE3-TP
MMSZ5230BHE3-TP
Hersteller: Micro Commercial Co
Description: 500MW ZENER SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
Mindestbestellmenge: 44
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RB520S-30HE3-TP RB520S-30HE3(SOD-523).pdf
RB520S-30HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB520S-30HE3-TP RB520S-30HE3(SOD-523).pdf
RB520S-30HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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SI0205-TP SI0205(SOT-523).pdf
SI0205-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-523
Produkt ist nicht verfügbar
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MCQ15N10B-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3530 pF @ 50 V
Produkt ist nicht verfügbar
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BZX84B12HE3-TP BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf
BZX84B12HE3-TP
Hersteller: Micro Commercial Co
Description: 350MW ZENER SOT-23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.075 EUR
Mindestbestellmenge: 3000
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BZX84B12HE3-TP BZX84B4V3HE3-BZX84B36HE3(SOT-23).pdf
BZX84B12HE3-TP
Hersteller: Micro Commercial Co
Description: 350MW ZENER SOT-23
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
Produkt ist nicht verfügbar
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MCMN2014HE3-TP MCMN2014HE3(DFN2020-6LE).pdf
MCMN2014HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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1N5989B-TP 1N5985B-1N6016B_DS.pdf
1N5989B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.055 EUR
Mindestbestellmenge: 10000
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SMA6J5.0AFL-TP
SMA6J5.0AFL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 9.2VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-221AC (SMA-FL)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMA6J5.0AFL-TP
SMA6J5.0AFL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 9.2VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-221AC (SMA-FL)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 16069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
36+0.5 EUR
100+0.3 EUR
500+0.28 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 28
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SMA6J5.0A-TP SMA6J5.0A-SMA6J58CA(SMA).pdf
SMA6J5.0A-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 9.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMA6J5.0A-TP SMA6J5.0A-SMA6J58CA(SMA).pdf
SMA6J5.0A-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 5VWM 9.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf
SMCJ250CAL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ250CAL-TP SMCJ220(C)AL%20THRU%20SMCJ350AL(DO-214AB).pdf
SMCJ250CAL-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 250VWM 405VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MCAC60N150Y-TP MCAC60N150Y_Rev3-4_4-9-22.pdf
MCAC60N150Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 150 60A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 75 V
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04(DFN3333-D).pdf
MCGD25N04-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
Produkt ist nicht verfügbar
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MCGD25N04-TP MCGD25N04(DFN3333-D).pdf
MCGD25N04-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2N-CH 40V 25A DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-D
Part Status: Active
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
Mindestbestellmenge: 13
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ESD1851P6-TP ESD0751P6~ESD1851P6(DFN1610-2).pdf
ESD1851P6-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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ESD1851P6-TP ESD0751P6~ESD1851P6(DFN1610-2).pdf
ESD1851P6-TP
Hersteller: Micro Commercial Co
Description: TVS DIODE 18VWM 35VC DFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 89305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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FR2504-BP
FR2504-BP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 25A TO220AC
Produkt ist nicht verfügbar
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SMA3EZ15D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMB3EZ15D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MCMN2014A-TP MCMN2014A(DFN2020-6J).pdf
MCMN2014A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
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MCMN2014A-TP MCMN2014A(DFN2020-6J).pdf
MCMN2014A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 5602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
28+0.63 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
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SIC1060P-BP SIC1060P(TO-220AC).pdf
SIC1060P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
10+4.6 EUR
100+3.72 EUR
500+3.64 EUR
Mindestbestellmenge: 4
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SIC0860P-BP SIC0860P(TO-220AC).pdf
SIC0860P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 30pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.81 EUR
10+6.56 EUR
100+5.31 EUR
500+4.72 EUR
1000+4.04 EUR
2000+3.81 EUR
Mindestbestellmenge: 3
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SICF0860P-BP SICF0860P(ITO-220AC).pdf
SICF0860P-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 650V 8A ITO220AC
Produkt ist nicht verfügbar
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MMBZ5244B-TP MMBZ5221B-MMBZ5259B(SOT-23).pdf
MMBZ5244B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 14V 350MW SOT23
Produkt ist nicht verfügbar
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SK5150LHE3-TP SK5150LHE3-SK5200LHE3(DO-214AB).pdf
SK5150LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
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SK5150LHE3-TP SK5150LHE3-SK5200LHE3(DO-214AB).pdf
SK5150LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A SMC
Produkt ist nicht verfügbar
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SMB3EZ150D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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SMA3EZ150D5-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER DO214AA
Produkt ist nicht verfügbar
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MMSZ5239BHE3-TP
MMSZ5239BHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5239BHE3-TP
MMSZ5239BHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4617-TP 1N4614-1N4125(DO-35)_DS.pdf
1N4617-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
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MCP55H12-BP MCP5H12.pdf
MCP55H12-BP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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MCB145N15Y-TP MCB145N15Y_Rev3-2_4-9-22.pdf
MCB145N15Y-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 75 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK52AFL_SK5200AFL(DO-221AC).pdf
SK5150AFL-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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SK5150AFL-TP SK52AFL_SK5200AFL(DO-221AC).pdf
SK5150AFL-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Produkt ist nicht verfügbar
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UMY1N-TP
Hersteller: Micro Commercial Co
Description: DIODE
Produkt ist nicht verfügbar
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AZ23C4V3HE3-TP AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf
AZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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AZ23C4V3HE3-TP AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf
AZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
35+0.51 EUR
100+0.29 EUR
500+0.19 EUR
1000+0.15 EUR
Mindestbestellmenge: 26
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DZ23C4V3HE3-TP DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf
DZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.098 EUR
6000+0.093 EUR
Mindestbestellmenge: 3000
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DZ23C4V3HE3-TP DZ23C2V4HE3_DZ23C47HE3(SOT-23).pdf
DZ23C4V3HE3-TP
Hersteller: Micro Commercial Co
Description: 300MW ZENER SOT-23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
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MPSA05-BP MPSA05_Rev3-2_12-1-2020.pdf
Hersteller: Micro Commercial Co
Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MCGD30P02-TP MCGD30P02(DFN3333).pdf
MCGD30P02-TP
Hersteller: Micro Commercial Co
Description: DUAL P-CHANNEL MOSFET, DFN3333-D
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.45 EUR
10000+0.43 EUR
Mindestbestellmenge: 5000
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MCGD30P02-TP MCGD30P02(DFN3333).pdf
MCGD30P02-TP
Hersteller: Micro Commercial Co
Description: DUAL P-CHANNEL MOSFET, DFN3333-D
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
16+1.1 EUR
100+0.84 EUR
500+0.67 EUR
1000+0.53 EUR
2000+0.48 EUR
Mindestbestellmenge: 15
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SI3139KDWA-TP SI3139KDWA(SOT-363).pdf
SI3139KDWA-TP
Hersteller: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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SI3139KDWA-TP SI3139KDWA(SOT-363).pdf
SI3139KDWA-TP
Hersteller: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
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