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2N2324S Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2325 2N2325 Microchip Technology Description: SCR 150V TO-39 (TO-205AD)
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-39 (TO-205AD)
Voltage - Off State: 150 V
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JAN2N2324 Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JAN2N2324S Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323A Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323AS Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N3821 Microchip Technology 2N3821%2C%203822%2C%203823.pdf Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
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2N4091 2N4091 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4091UB 2N4091UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4092 2N4092 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4092UB 2N4092UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4093 2N4093 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4093UB 2N4093UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4391UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4392UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4393UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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2N4449UB 2N4449UB Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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2N4856UB 2N4856UB Microchip Technology Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4857UB 2N4857UB Microchip Technology Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N4858UB 2N4858UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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2N4859UB 2N4859UB Microchip Technology Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4860UB 2N4860UB Microchip Technology 2N4860UB.pdf Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5114 2N5114 Microchip Technology 124387-lds-0006 Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5114UB 2N5114UB Microchip Technology 123965-lds-0006-1 Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5115UB 2N5115UB Microchip Technology 123965-lds-0006-1 Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 60 mA @ 15 V
Qualification: MIL-PRF-19500
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2N5427 Microchip Technology Description: TRANS PNP 80V 7A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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JANS2N2222AUBC JANS2N2222AUBC Microchip Technology Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANS2N2369AUBC JANS2N2369AUBC Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSH2N2222A JANSH2N2222A Microchip Technology 8868-lds-0042-pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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MV2N4092 MV2N4092 Microchip Technology 8805-lds-0007-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Qualification: MIL-PRF-19500/431
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MV2N4391 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4391UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4393 Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4393UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4856 MV2N4856 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4856UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4857 MV2N4857 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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MV2N4857UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4858 MV2N4858 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
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MV2N4858UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4859 MV2N4859 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4859UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4860 MV2N4860 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4860UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4861 MV2N4861 Microchip Technology 2N4856UB-61UB.pdf Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N5114 MV2N5114 Microchip Technology 124387-lds-0006 Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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MX2N4391 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4391UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4392 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4392UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4393 Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MX2N4393UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MX2N4856 MX2N4856 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MX2N4856UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4857 MX2N4857 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MX2N4857UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MX2N4858 MX2N4858 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
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MX2N4858UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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2N2324S 6024-2n2323-datasheet
Hersteller: Microchip Technology
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2325
2N2325
Hersteller: Microchip Technology
Description: SCR 150V TO-39 (TO-205AD)
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-39 (TO-205AD)
Voltage - Off State: 150 V
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JAN2N2324 2N2323_-_2N2329A.pdf
Hersteller: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JAN2N2324S 2N2323_-_2N2329A.pdf
Hersteller: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323A 2N2323_-_2N2329A.pdf
Hersteller: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323AS 2N2323_-_2N2329A.pdf
Hersteller: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N3821 2N3821%2C%203822%2C%203823.pdf
Hersteller: Microchip Technology
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
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2N4091 6071-2n4091-pdf
2N4091
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4091UB
2N4091UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4092 6071-2n4091-pdf
2N4092
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4092UB
2N4092UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4093 6071-2n4091-pdf
2N4093
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4093UB
2N4093UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4391UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4392UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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2N4393UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
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2N4449UB 8893-lds-0057-datasheet
2N4449UB
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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2N4856UB
2N4856UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4857UB
2N4857UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N4858UB
2N4858UB
Hersteller: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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2N4859UB
2N4859UB
Hersteller: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4860UB 2N4860UB.pdf
2N4860UB
Hersteller: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
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2N5114 124387-lds-0006
2N5114
Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5114UB 123965-lds-0006-1
2N5114UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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2N5115UB 123965-lds-0006-1
2N5115UB
Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 60 mA @ 15 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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2N5427
Hersteller: Microchip Technology
Description: TRANS PNP 80V 7A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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JANS2N2222AUBC
JANS2N2222AUBC
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANS2N2369AUBC 8893-lds-0057-datasheet
JANS2N2369AUBC
Hersteller: Microchip Technology
Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANSH2N2222A 8868-lds-0042-pdf
JANSH2N2222A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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MV2N4092 8805-lds-0007-pdf
MV2N4092
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Qualification: MIL-PRF-19500/431
Produkt ist nicht verfügbar
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MV2N4391
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4391UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4392
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4392UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4393
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
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MV2N4393UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
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MV2N4856 8796-lds-0002-pdf
MV2N4856
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
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MV2N4856UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4857 8796-lds-0002-pdf
MV2N4857
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MV2N4857UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4858 8796-lds-0002-pdf
MV2N4858
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
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MV2N4858UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MV2N4859 8796-lds-0002-pdf
MV2N4859
Hersteller: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
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MV2N4859UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4860 8796-lds-0002-pdf
MV2N4860
Hersteller: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MV2N4860UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MV2N4861 2N4856UB-61UB.pdf
MV2N4861
Hersteller: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
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MV2N5114 124387-lds-0006
MV2N5114
Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4391
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4391UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4392
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4392UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4393
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4393UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4856 8796-lds-0002-pdf
MX2N4856
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4856UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4857 8796-lds-0002-pdf
MX2N4857
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4857UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4858 8796-lds-0002-pdf
MX2N4858
Hersteller: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MX2N4858UB
Hersteller: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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