Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (338104) > Seite 1148 nach 5636
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| 1N944 | Microchip Technology |
 Description: DIODE ZENERTolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-7 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 8 V |
Produkt ist nicht verfügbar |
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-Axial-Microchip.JPG "1N944A") |
1N944A | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2N1613A | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2N1613L | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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| 2N1702 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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2N1711S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2N2102S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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2N2920U | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2N2945A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV Supplier Device Package: TO-46 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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2N3440UA | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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| 2N3506A | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
Produkt ist nicht verfügbar |
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| 2N3506AL | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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| 2N3506L | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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| 2N3507 | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
Produkt ist nicht verfügbar |
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| 2N3507AL | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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| 2N3507L | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
Produkt ist nicht verfügbar |
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| 2N3637 | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
Produkt ist nicht verfügbar |
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2N3740 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W |
Produkt ist nicht verfügbar |
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2N3741 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
auf Bestellung 438 Stücke: Lieferzeit 21-28 Tag (e) |
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2N3741A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
Produkt ist nicht verfügbar |
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| 2N3867 | Microchip Technology |
Description: TRANS PNP 40V 0.003A TO5 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2N3867S | Microchip Technology |
Description: TRANS PNP 40V 0.003A TO39 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2N3879 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A Current - Collector Cutoff (Max): 4mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 35 W |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "2N3902") |
2N3902 | Microchip Technology |
Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
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2N4231 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4232A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4233 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4233A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 2N4300 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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| 2N4898 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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| 2N4899 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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| 2N5039 | Microchip Technology |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 140 W |
Produkt ist nicht verfügbar |
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| 2N5050 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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2N5336 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N5337 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 2N5415S | Microchip Technology |
Description: PNP TRANSISTORS |
Produkt ist nicht verfügbar |
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2N5415UA | Microchip Technology |
Description: PNP TRANSISTORS Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW |
Produkt ist nicht verfügbar |
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2N5838 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N5839 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N5840 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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2N5868 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5872 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5873 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5874 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5875 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5876 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5877 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5880 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5881 | Microchip Technology |
Description: TRANS NPN 60V 15A Packaging: Bulk Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 160 W |
Produkt ist nicht verfügbar |
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2N5882 | Microchip Technology |
Description: NPN POWER TRANSISTOR SILICON AMP Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 160 W |
Produkt ist nicht verfügbar |
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2N6051 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
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2N6058 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
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| 2N6193U3 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 2N6278 | Microchip Technology | Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
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| 2N6280 | Microchip Technology | Description: NPN TRANSISTOR |
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| 2N6281 | Microchip Technology | Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
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2N6298 | Microchip Technology |
Description: PNP TRANSISTOR |
Produkt ist nicht verfügbar |
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2N6299 | Microchip Technology |
Description: PNP TRANSISTOR |
Produkt ist nicht verfügbar |
| 1N944 |
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Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Produkt ist nicht verfügbar
| 1N944A |
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Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N1613A |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2N1613L |
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Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2N1702 |
Produkt ist nicht verfügbar
| 2N1711S |
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Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2N2920U |
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 129.71 EUR |
| 2N2945A |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
| 2N3440UA |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: NPN POWER SILICON TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2N3506A |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3506AL |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3506L |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3507 |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3507AL |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3507L |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3637 |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
Description: NPN POWER SILICON TRANSISTORS
Produkt ist nicht verfügbar
| 2N3740 |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Produkt ist nicht verfügbar
| 2N3741 |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
auf Bestellung 438 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 35.44 EUR |
| 100+ | 32.92 EUR |
| 2N3741A |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
| 2N3867 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2N3867S |
|
Hersteller: Microchip Technology
Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2N3868S |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2N3879 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
Produkt ist nicht verfügbar
| 2N4300 |
Produkt ist nicht verfügbar
| 2N4898 |
Hersteller: Microchip Technology
Description: NPN SILICON TRANSISTOR
Description: NPN SILICON TRANSISTOR
Produkt ist nicht verfügbar
| 2N4899 |
Hersteller: Microchip Technology
Description: NPN SILICON TRANSISTOR
Description: NPN SILICON TRANSISTOR
Produkt ist nicht verfügbar
| 2N5039 |
|
Hersteller: Microchip Technology
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Produkt ist nicht verfügbar
| 2N5050 |
Hersteller: Microchip Technology
Description: NPN SILICON TRANSISTOR
Description: NPN SILICON TRANSISTOR
Produkt ist nicht verfügbar
| 2N5415UA |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 108.58 EUR |
| 2N5416UA |
|
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
| 2N5881 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Produkt ist nicht verfügbar
| 2N5882 |
Hersteller: Microchip Technology
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Produkt ist nicht verfügbar
| 2N6051 |
Hersteller: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
| 2N6058 |
Hersteller: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
| 2N6193U3 |
Produkt ist nicht verfügbar