Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (338678) > Seite 1151 nach 5645
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MXPLAD7.5KP33AE3 | Microchip Technology |
 Description: TVS DIODEPackaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXPLAD7.5KP36A | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
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MXPLAD7.5KP36AE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXPLAD7.5KP40AE3 | Microchip Technology |
Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MXPLAD7.5KP48CA | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 97A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MXPLAD7.5KP48CAE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 97A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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R21100 | Microchip Technology |
Description: RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 22A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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SBR2545 | Microchip Technology |
Description: RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 45 V |
Produkt ist nicht verfügbar |
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SBR3045 | Microchip Technology |
Description: RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V |
Produkt ist nicht verfügbar |
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| UFR3010PF | Microchip Technology |
Description: DIODE GEN PURP 100V 30A DO21 Packaging: Bulk Package / Case: DO-208AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-21 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
Produkt ist nicht verfügbar |
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| UFR3015PF | Microchip Technology |
Description: DIODE GEN PURP 150V 30A DO21 Packaging: Bulk Package / Case: DO-208AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-21 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 150 V |
Produkt ist nicht verfügbar |
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| UFR3020PF | Microchip Technology |
Description: DIODE GEN PURP 200V 30A DO21 Packaging: Bulk Package / Case: DO-208AA Mounting Type: Press Fit Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-21 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 200 V |
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JANTXV1N3600 | Microchip Technology |
Description: DIODE 50V 200MA DO7 Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Average Rectified (Io): 200mA Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: MIL-PRF-19500/231 |
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JANTXV1N5712UBCC | Microchip Technology |
Description: DIODE ARRAY SCHOTTKY 16V 75MA UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 75mA Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 16 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Current - Reverse Leakage @ Vr: 150 nA @ 16 V Qualification: MIL-PRF-19500/444 |
Produkt ist nicht verfügbar |
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| JANTXV1N6330 | Microchip Technology |
Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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| JANTXV1N6639US | Microchip Technology |
Description: SWITCHING DIODE |
Produkt ist nicht verfügbar |
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Jantxv2N5416 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5AA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
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| Jantxv2N6284 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V Supplier Device Package: TO-204AA (TO-3) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 175 W Qualification: MIL-PRF-19500/504 |
Produkt ist nicht verfügbar |
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| JANTXV2N6676 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Supplier Device Package: TO-204AD (TO-3) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 6 W Qualification: MIL-PRF-19500/538 |
Produkt ist nicht verfügbar |
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| 1N1183 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1183R | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1189 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
Produkt ist nicht verfügbar |
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| 1N1190 | Microchip Technology |
Description: STANDARD RECTIFIER |
Produkt ist nicht verfügbar |
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| 1N1190R | Microchip Technology |
Description: STANDARD RECTIFIER |
Produkt ist nicht verfügbar |
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1N3891R | Microchip Technology |
Description: FAST RECOVERY RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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-Axial-Microchip.JPG "1N5261B") |
1N5261B | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 105 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 36 V |
Produkt ist nicht verfügbar |
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2N3724 | Microchip Technology |
Description: NPN POWER SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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; ; 3.jpg "2N4237") |
2N4237 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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| 2N697 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
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| 2N6987U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C Power - Max: 1W Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC (8.89x8.89) |
Produkt ist nicht verfügbar |
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| 1N5913B | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
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1N5924B | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-41 Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 7 V |
Produkt ist nicht verfügbar |
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| 1N5953B | Microchip Technology |
Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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2N5302 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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2N5885 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5886 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N6286 | Microchip Technology |
Description: TRANS PNP DARL 80V 20A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V Supplier Device Package: TO-204AA (TO-3) Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 175 W |
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2N5416 | Microchip Technology |
Description: PNP TRANSISTORS Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW |
auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) |
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1N4462US | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: A, SQ-MELF Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V |
Produkt ist nicht verfügbar |
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1N4467US | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: A, SQ-MELF Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V |
Produkt ist nicht verfügbar |
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1N4475US | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 18 Ohms Supplier Device Package: A, SQ-MELF Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V |
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1N4487US | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 160 Ohms Supplier Device Package: D-5A Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 65.6 V |
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1N4488US | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: A, SQ-MELF Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V |
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1N4494US | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1000 Ohms Supplier Device Package: A, SQ-MELF Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 128 V |
Produkt ist nicht verfügbar |
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| 1N6123 | Microchip Technology |
Description: TVS DIODE |
Produkt ist nicht verfügbar |
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1N6638US | Microchip Technology |
Description: DIODE GEN PURP 125V 300MA D-5D Packaging: Bulk Package / Case: SQ-MELF, D Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 125 V |
auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) |
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1N1199B | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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1N1200B | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N1204B | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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| 1N1183AR | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| 1N1184AR | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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| 1N5833 | Microchip Technology |
Description: DIODE SCHOTTKY 30V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 20 mA @ 30 V |
Produkt ist nicht verfügbar |
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| 1N5834 | Microchip Technology |
Description: 5A SCHOTTKY RECTIFIER |
Produkt ist nicht verfügbar |
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 |
2N2218A | Microchip Technology |
Description: TRANS NPN 30V 0.8A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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|
|
2N5878 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 2N918 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V Supplier Device Package: TO-72 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
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| APTGLQ200H65G | Microchip Technology |
Description: IGBT MODULE 650V 270A 680W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 270 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 680 W Current - Collector Cutoff (Max): 75 µA Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ300SK120G | Microchip Technology |
Description: IGBT MODULE 1200V 500A 1500W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Buck Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1500 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ50DDA65T3G | Microchip Technology |
Description: IGBT MODULE 650V 70A 175W |
Produkt ist nicht verfügbar |
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| APTGLQ50TL65T3G | Microchip Technology |
Description: IGBT MODULE 650V 70A 175W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3F IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 175 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
Produkt ist nicht verfügbar |
| MXPLAD7.5KP33AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD7.5KP36A |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MXPLAD7.5KP36AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD7.5KP48CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MXPLAD7.5KP48CAE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| R21100 |
|
Hersteller: Microchip Technology
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 22A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 22A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
| SBR2545 |
|
Hersteller: Microchip Technology
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
| SBR3045 |
|
Hersteller: Microchip Technology
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Produkt ist nicht verfügbar
| UFR3010PF |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE GEN PURP 100V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Produkt ist nicht verfügbar
| UFR3015PF |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Description: DIODE GEN PURP 150V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Produkt ist nicht verfügbar
| UFR3020PF |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Description: DIODE GEN PURP 200V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
| JANTXV1N3600 |
|
Hersteller: Microchip Technology
Description: DIODE 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
Description: DIODE 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
Produkt ist nicht verfügbar
| JANTXV1N5712UBCC |
|
Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 16V 75MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 16 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Qualification: MIL-PRF-19500/444
Description: DIODE ARRAY SCHOTTKY 16V 75MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 16 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Qualification: MIL-PRF-19500/444
Produkt ist nicht verfügbar
| JANTXV1N6639US |
|
Hersteller: Microchip Technology
Description: SWITCHING DIODE
Description: SWITCHING DIODE
Produkt ist nicht verfügbar
| Jantxv2N5416 |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
| Jantxv2N6284 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
Produkt ist nicht verfügbar
| JANTXV2N6676 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/538
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/538
Produkt ist nicht verfügbar
| 1N1183 |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1183R |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1189 |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
| 1N3891R |
|
Hersteller: Microchip Technology
Description: FAST RECOVERY RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: FAST RECOVERY RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
| 1N5261B |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Produkt ist nicht verfügbar
| 2N3724 |
|
Hersteller: Microchip Technology
Description: NPN POWER SILICON TRANSISTOR
Description: NPN POWER SILICON TRANSISTOR
Produkt ist nicht verfügbar
| 2N4237 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2N697 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
| 2N6987U |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC (8.89x8.89)
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC (8.89x8.89)
Produkt ist nicht verfügbar
| 1N5913B |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
| 1N5924B |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7 V
Produkt ist nicht verfügbar
| 2N5302 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Produkt ist nicht verfügbar
| 2N6286 |
|
Hersteller: Microchip Technology
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Produkt ist nicht verfügbar
| 2N5416 |
|
Hersteller: Microchip Technology
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 40.33 EUR |
| 1N4462US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Produkt ist nicht verfügbar
| 1N4467US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Produkt ist nicht verfügbar
| 1N4475US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
Produkt ist nicht verfügbar
| 1N4487US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 65.6 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 65.6 V
Produkt ist nicht verfügbar
| 1N4488US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Produkt ist nicht verfügbar
| 1N4494US |
|
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Produkt ist nicht verfügbar
| 1N6638US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 125V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
Description: DIODE GEN PURP 125V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.34 EUR |
| 100+ | 16.12 EUR |
| 1N1199B |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1200B |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
| 1N1204B |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
| 1N1183AR |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| 1N1184AR |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
| 1N5833 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
Produkt ist nicht verfügbar
| 1N5834 |
|
Hersteller: Microchip Technology
Description: 5A SCHOTTKY RECTIFIER
Description: 5A SCHOTTKY RECTIFIER
Produkt ist nicht verfügbar
| 2N2218A |
|
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2N918 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Supplier Device Package: TO-72
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Supplier Device Package: TO-72
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
| APTGLQ200H65G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 270A 680W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
Description: IGBT MODULE 650V 270A 680W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
Produkt ist nicht verfügbar
| APTGLQ300SK120G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 500A 1500W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V
Description: IGBT MODULE 1200V 500A 1500W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V
Produkt ist nicht verfügbar
| APTGLQ50DDA65T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 70A 175W
Description: IGBT MODULE 650V 70A 175W
Produkt ist nicht verfügbar
| APTGLQ50TL65T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 70A 175W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3F
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Description: IGBT MODULE 650V 70A 175W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3F
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Produkt ist nicht verfügbar