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QT110-S QT110-S Microchip Technology QT110(H).pdf Description: IC SCREEN CNTRL 14BIT 8SO
Current - Supply: 20 µA
Touchscreen: 2 Wire Capacitive
Voltage Reference: Internal
Supplier Device Package: 8-SO
Resolution (Bits): 14 b
Voltage - Supply: 2.5V, 3.3V, 5V
Operating Temperature: 0°C ~ 70°C
Interface: Serial
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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E110 Microchip Technology E11x%20Users%20Guide.pdf Description: BOARD EVAL FOR QT110 TOUCH SENSR
Supplied Contents: Board(s)
Contents: Board(s)
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MSMCJLCE22A MSMCJLCE22A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 22VWM 35.5VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 42A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
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AT93C46-10TU-2.7-T AT93C46-10TU-2.7-T Microchip Technology AT93C46%2C56%2C66.pdf Description: IC EEPROM 1KBIT 3-WIRE 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8, 64 x 16
Memory Interface: 3-Wire Serial
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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PIC32MZ2064DAA169T-I/HF PIC32MZ2064DAA169T-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2064DAA169T-I/HF PIC32MZ2064DAA169T-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2025DAA288T-I/4J PIC32MZ2025DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAA288T-I/4J PIC32MZ2025DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2064DAA288T-I/4J PIC32MZ2064DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 288-LFBGA (15x15)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 288-LFBGA
Packaging: Tape & Reel (TR)
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PIC32MZ2064DAA288T-I/4J PIC32MZ2064DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 288-LFBGA (15x15)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 288-LFBGA
Packaging: Cut Tape (CT)
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PIC32MZ2025DAL176-V/2J PIC32MZ2025DAL176-V/2J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 2MB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Supplier Device Package: 176-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Core Size: 32-Bit
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
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PIC32MZ2064DAA169-I/HF PIC32MZ2064DAA169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 169-LFBGA (11x11)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 169-LFBGA
Packaging: Tray
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PIC32MZ2064DAB169-I/HF PIC32MZ2064DAB169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Package / Case: 169-LFBGA
Packaging: Tray
Supplier Device Package: 169-LFBGA (11x11)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
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JANTX1N5553US/TR JANTX1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
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JAN1N5553US/TR JAN1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
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JAN1N5553/TR JAN1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JANS1N5553US JANS1N5553US Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANTXV1N5553/TR JANTXV1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
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JANTX1N5553/TR JANTX1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JANS1N5553/TR JANS1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JANTXV1N5553US/TR JANTXV1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
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JANS1N5553 JANS1N5553 Microchip Technology Description: DIODE GEN PURP 800V 5A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JANTXV1N5553US JANTXV1N5553US Microchip Technology vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8 Description: DIODE GEN PURP 800V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N5553US/TR 1N5553US/TR Microchip Technology 10966-sa7-43-datasheet Description: STD RECTIFIER
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
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1N5553/TR 1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: STD RECTIFIER
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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MSMBG100CA MSMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBG)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 3.7A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
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MASMBG100CAe3 MASMBG100CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A MXLSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA MASMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 MSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 MXLSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU Microchip Technology 1244404-pd-95xxgc-family-datasheet-sep23-2019 Description: 12-PORT BT 60W NMS AU CORD
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Packaging: Bulk
Power (Watts) - Per Port: 60W
Approval Agency: CE
Data Rate: 10/100/1000 Mbps
Operating Temperature: 0°C ~ 40°C
Type: Midspan Injector
Voltage - Input: 100 ~ 240 VAC
Number of Ports: 12
Current - Output: 1.1 A
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Mounting Type: Rack Mount
Voltage - Output: 55V
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MA15KP28CA MA15KP28CA Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 28VWM 47.5VC DO204AR
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 47.5V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 316A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar
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MXSMBG28A MXSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 MXRT100KP58Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A MXSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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CD978B CD978B Microchip Technology 8385-cd957b-cd986b-datasheet Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ1024EFK100-E/PF Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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JAN1N5188/TR JAN1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JAN1N5187/TR JAN1N5187/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR JANTX1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JANTXV1N5186/TR JANTXV1N5186/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Packaging: Tape & Reel (TR)
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
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1N5189/TR 1N5189/TR Microchip Technology 11517-lds-0216-pdf.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR 1N5188/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR JANTX1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTXV1N5187/TR JANTXV1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
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JAN1N5186/TR JAN1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N5189/TR JAN1N5189/TR Microchip Technology Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5186/TR 1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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JANTX1N5188/TR JANTX1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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1N5187/TR 1N5187/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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1N5188US/TR 1N5188US/TR Microchip Technology Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5183E3 1N5183E3 Microchip Technology 1N3643-1N3647_1N4254-1N4257_1N5181-1N5184.pdf Description: DIODE STD 7500V 100MA S AXIAL
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 7500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
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1N4896/TR 1N4896/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4896A/TR 1N4896A/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4901/TR 1N4901/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER TEMP COMPENSATED
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1N4901A/TR 1N4901A/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER TEMP COMPENSATED
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MXLSMCJ40CAe3 MXLSMCJ40CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MASMCJ40CAe3 MASMCJ40CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MASMCJ40CA MASMCJ40CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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QT110-S QT110(H).pdf
Hersteller: Microchip Technology
Description: IC SCREEN CNTRL 14BIT 8SO
Current - Supply: 20 µA
Touchscreen: 2 Wire Capacitive
Voltage Reference: Internal
Supplier Device Package: 8-SO
Resolution (Bits): 14 b
Voltage - Supply: 2.5V, 3.3V, 5V
Operating Temperature: 0°C ~ 70°C
Interface: Serial
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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E110 E11x%20Users%20Guide.pdf
Hersteller: Microchip Technology
Description: BOARD EVAL FOR QT110 TOUCH SENSR
Supplied Contents: Board(s)
Contents: Board(s)
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MSMCJLCE22A 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 42A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
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AnzahlPreis
3+7.64 EUR
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AT93C46-10TU-2.7-T AT93C46%2C56%2C66.pdf
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT 3-WIRE 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8, 64 x 16
Memory Interface: 3-Wire Serial
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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PIC32MZ2064DAA169T-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2064DAA169T-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2025DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2064DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 288-LFBGA (15x15)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 288-LFBGA
Packaging: Tape & Reel (TR)
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AnzahlPreis
1000+28.72 EUR
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PIC32MZ2064DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 288-LFBGA (15x15)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 288-LFBGA
Packaging: Cut Tape (CT)
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AnzahlPreis
1+34.6 EUR
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PIC32MZ2025DAL176-V/2J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Supplier Device Package: 176-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Core Size: 32-Bit
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
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1+30.38 EUR
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PIC32MZ2064DAA169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 169-LFBGA (11x11)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 169-LFBGA
Packaging: Tray
auf Bestellung 328 Stücke:
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PIC32MZ2064DAB169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 45x12b
Core Processor: MIPS32® microAptiv™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 640K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Number of I/O: 120
Part Status: Active
Package / Case: 169-LFBGA
Packaging: Tray
Supplier Device Package: 169-LFBGA (11x11)
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
auf Bestellung 154 Stücke:
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JANTX1N5553US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
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JAN1N5553US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JAN1N5553/TR 11519-lds-0230-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANS1N5553US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5553/TR 11519-lds-0230-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
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JANTX1N5553/TR 11519-lds-0230-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JANS1N5553/TR 11519-lds-0230-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANTXV1N5553US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
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JANS1N5553
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5553US vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5553US/TR 10966-sa7-43-datasheet
Hersteller: Microchip Technology
Description: STD RECTIFIER
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5553/TR 11519-lds-0230-datasheet
Hersteller: Microchip Technology
Description: STD RECTIFIER
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MSMBG100CA 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBG)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 3.7A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
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MASMBG100CAe3 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU 1244404-pd-95xxgc-family-datasheet-sep23-2019
Hersteller: Microchip Technology
Description: 12-PORT BT 60W NMS AU CORD
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Packaging: Bulk
Power (Watts) - Per Port: 60W
Approval Agency: CE
Data Rate: 10/100/1000 Mbps
Operating Temperature: 0°C ~ 40°C
Type: Midspan Injector
Voltage - Input: 100 ~ 240 VAC
Number of Ports: 12
Current - Output: 1.1 A
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Mounting Type: Rack Mount
Voltage - Output: 55V
Produkt ist nicht verfügbar
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MA15KP28CA rf01011_m15kp_rev_e.pdf
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 47.5VC DO204AR
Power - Peak Pulse: 15000W (15kW)
Voltage - Clamping (Max) @ Ipp: 47.5V
Voltage - Breakdown (Min): 31.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 316A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar
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MXSMBG28A 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 77294-mrt100kp-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A 10560-msmb-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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CD978B 8385-cd957b-cd986b-datasheet
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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1+22.14 EUR
25+20.3 EUR
100+18.38 EUR
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JAN1N5188/TR 11517-lds-0216-datasheet
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
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JAN1N5187/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR 11517-lds-0216-datasheet
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JANTXV1N5186/TR 11517-lds-0216-datasheet
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Packaging: Tape & Reel (TR)
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Produkt ist nicht verfügbar
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1N5189/TR 11517-lds-0216-pdf.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
Produkt ist nicht verfügbar
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JANTXV1N5187/TR 11517-lds-0216-datasheet
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Produkt ist nicht verfügbar
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JAN1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
Produkt ist nicht verfügbar
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JAN1N5189/TR
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
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JANTX1N5188/TR 11517-lds-0216-datasheet
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Qualification: MIL-PRF-19500/424
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5187/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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1N5188US/TR
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5183E3 1N3643-1N3647_1N4254-1N4257_1N5181-1N5184.pdf
Hersteller: Microchip Technology
Description: DIODE STD 7500V 100MA S AXIAL
Mounting Type: Through Hole
Package / Case: S, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 7500 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar
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1N4896/TR 10941-sa6-31-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4896A/TR 10941-sa6-31-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4901/TR 10941-sa6-31-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Produkt ist nicht verfügbar
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1N4901A/TR 10941-sa6-31-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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MXLSMCJ40CAe3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MASMCJ40CAe3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MASMCJ40CA 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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