Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (336823) > Seite 1526 nach 5614
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MSMLG13CA | Microchip Technology |
 Description: TVS DIODE 13VWM 21.5VC SMLGPackaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139.4A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: SMLG (DO-215AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMCJLCE45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
Produkt ist nicht verfügbar |
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MSMCJLCE90A | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MSMLG100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: SMLG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXLSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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| MSMCJ10CA/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
Produkt ist nicht verfügbar |
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| MASMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
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MASMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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| MASMCJ10CA/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
Produkt ist nicht verfügbar |
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| MSMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
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MXLSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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JANS1N4494C | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±2% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1000 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 128 V Grade: Military Qualification: MIL-PRF-19500/406 |
Produkt ist nicht verfügbar |
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JANTXV1N4494C | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±2% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1000 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 128 V Grade: Military Qualification: MIL-PRF-19500/406 |
Produkt ist nicht verfügbar |
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JANSP2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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JANKCBM2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSD2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSP2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSR2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BLUETOOTH U.FL SMD Packaging: Tape & Reel (TR) Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BLUETOOTH U.FL SMD Packaging: Cut Tape (CT) Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 476 Stücke: Lieferzeit 21-28 Tag (e) |
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ATWINC3400-MR210UA143 | Microchip Technology |
Description: RF TXRX MOD BLUETOOTH U.FL SMD Packaging: Tray Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 42 Stücke: Lieferzeit 21-28 Tag (e) |
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| Jantxv2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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| Jantx2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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JAN2N6301 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 500 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W Grade: Military Qualification: MIL-PRF-19500/539 |
Produkt ist nicht verfügbar |
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| JANTXV2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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| JAN2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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| JANTX2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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JANTX2N6300 | Microchip Technology | Description: TRANS NPN DARL 60V 500UA TO66 |
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2N6301E3 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 500 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |
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| 2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |
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2N6306 | Microchip Technology |
Description: NPN TRANSISTOR |
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| 2N6308T1 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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| JANTX2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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| JANTXV2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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| 2N6303 | Microchip Technology | Description: POWER BJT |
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2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W |
Produkt ist nicht verfügbar |
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| JAN2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |
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| 2N6306T1 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
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| JANTX2N6301 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |
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JANTXV1N4123-1 | Microchip Technology |
Description: DIODE ZENER 39V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V Qualification: MIL-PRF-19500/435 |
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| OX-221-9100-20M000 | Microchip Technology | Description: OX-221-9100-20M000 |
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| OX-221-9100-20M000 | Microchip Technology | Description: OX-221-9100-20M000 |
Produkt ist nicht verfügbar |
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| MDA3KP12.0CAE3 | Microchip Technology | Description: BI-DIRECTIONAL TVS _ SOIC-8 |
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PL123-05HSC-R | Microchip Technology |
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 134MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOP PLL: Yes with Bypass Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
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PL123-05HSC-R | Microchip Technology |
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 134MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOP PLL: Yes with Bypass Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 1494 Stücke: Lieferzeit 21-28 Tag (e) |
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| MX555ABC250M000 | Microchip Technology |
Description: MEMS OSC XO LVCMOS SMD Packaging: Tube |
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| MX555ABC250M000-TR | Microchip Technology |
Description: MEMS OSC XO LVCMOS SMD Packaging: Tape & Reel (TR) |
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| LX5586ALL-TR | Microchip Technology |
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO |
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| LX5586ALL-TR | Microchip Technology |
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO |
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| LX5586ALL | Microchip Technology | Description: WIRELESS LAN FRONT-END MODULE |
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25LC160D-E/SN16KVAO | Microchip Technology |
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
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PIC18F26Q43-I/STX | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 28VQFN Packaging: Tube Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 24x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 28-VQFN (4x4) Number of I/O: 25 DigiKey Programmable: Not Verified |
auf Bestellung 424 Stücke: Lieferzeit 21-28 Tag (e) |
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| JANS1N6122AUS | Microchip Technology | Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF |
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| JANS1N6123A | Microchip Technology | Description: TVS DIODE 38.8VWM 70.1VC SQ-MELF |
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| JANS1N6129A | Microchip Technology | Description: TVS DIODE 69.2VWM 125.1V SQ-MELF |
Produkt ist nicht verfügbar |
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JANTX1N6122AUS/TR | Microchip Technology | Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF |
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JANTX1N6124AUS | Microchip Technology |
Description: TVS DIODE 42.6VWM 77VC B SQ-MELF |
Produkt ist nicht verfügbar |
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| EVB-LAN9730-MII | Microchip Technology |
Description: EVALUATION BOARD LAN9730 |
Produkt ist nicht verfügbar |
| MSMLG13CA |
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Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MSMCJLCE45A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
| MSMCJLCE90A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MSMLG100Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXLSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
| MSMCJ10CA/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
| MASMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
| MASMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
| MXSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
| MASMCJ10CA/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
| MSMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
| MXLSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
| MXSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
| JANS1N4494C |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Grade: Military
Qualification: MIL-PRF-19500/406
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Grade: Military
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
| JANTXV1N4494C |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Grade: Military
Qualification: MIL-PRF-19500/406
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Grade: Military
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
| JANSP2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| JANKCBM2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| JANSD2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| JANSP2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| JANSR2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 476 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 34.92 EUR |
| 25+ | 31.6 EUR |
| 100+ | 29.91 EUR |
| ATWINC3400-MR210UA143 |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BLUETOOTH U.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 42 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 34.84 EUR |
| 25+ | 31.52 EUR |
| Jantxv2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
| Jantx2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
| JAN2N6301 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
Produkt ist nicht verfügbar
| JANTXV2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
| JAN2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
| JANTX2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
| JANTX2N6300 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 500UA TO66
Description: TRANS NPN DARL 60V 500UA TO66
Produkt ist nicht verfügbar
| 2N6301E3 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| 2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| 2N6308T1 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
| JANTX2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| JANTXV2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| 2N6300 |
|
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| JAN2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| JANTX2N6301 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
| JANTXV1N4123-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
| OX-221-9100-20M000 |
Hersteller: Microchip Technology
Description: OX-221-9100-20M000
Description: OX-221-9100-20M000
Produkt ist nicht verfügbar
| OX-221-9100-20M000 |
Hersteller: Microchip Technology
Description: OX-221-9100-20M000
Description: OX-221-9100-20M000
Produkt ist nicht verfügbar
| MDA3KP12.0CAE3 |
Hersteller: Microchip Technology
Description: BI-DIRECTIONAL TVS _ SOIC-8
Description: BI-DIRECTIONAL TVS _ SOIC-8
Produkt ist nicht verfügbar
| PL123-05HSC-R |
|
Hersteller: Microchip Technology
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 134MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 134MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| PL123-05HSC-R |
|
Hersteller: Microchip Technology
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 134MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK MULTPLX 1:5 134MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 134MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1494 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 2.63 EUR |
| 25+ | 2.19 EUR |
| 100+ | 2 EUR |
| MX555ABC250M000 |
|
Produkt ist nicht verfügbar
| MX555ABC250M000-TR |
|
Produkt ist nicht verfügbar
| LX5586ALL-TR |
|
Hersteller: Microchip Technology
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Produkt ist nicht verfügbar
| LX5586ALL-TR |
|
Hersteller: Microchip Technology
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Description: 5G FEM, 2.5MMX2.5MM, 3.3V, IMPRO
Produkt ist nicht verfügbar
| LX5586ALL |
Hersteller: Microchip Technology
Description: WIRELESS LAN FRONT-END MODULE
Description: WIRELESS LAN FRONT-END MODULE
Produkt ist nicht verfügbar
| 25LC160D-E/SN16KVAO |
|
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| PIC18F26Q43-I/STX |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 28VQFN
Packaging: Tube
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 28VQFN
Packaging: Tube
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 424 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.87 EUR |
| 25+ | 3.54 EUR |
| 100+ | 3.21 EUR |
| JANS1N6122AUS |
Hersteller: Microchip Technology
Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF
Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF
Produkt ist nicht verfügbar
| JANS1N6123A |
Hersteller: Microchip Technology
Description: TVS DIODE 38.8VWM 70.1VC SQ-MELF
Description: TVS DIODE 38.8VWM 70.1VC SQ-MELF
Produkt ist nicht verfügbar
| JANS1N6129A |
Hersteller: Microchip Technology
Description: TVS DIODE 69.2VWM 125.1V SQ-MELF
Description: TVS DIODE 69.2VWM 125.1V SQ-MELF
Produkt ist nicht verfügbar
| JANTX1N6122AUS/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF
Description: TVS DIODE 35.8VWM 64.6VC SQ-MELF
Produkt ist nicht verfügbar
| JANTX1N6124AUS |
|
Hersteller: Microchip Technology
Description: TVS DIODE 42.6VWM 77VC B SQ-MELF
Description: TVS DIODE 42.6VWM 77VC B SQ-MELF
Produkt ist nicht verfügbar
| EVB-LAN9730-MII |
|
Hersteller: Microchip Technology
Description: EVALUATION BOARD LAN9730
Description: EVALUATION BOARD LAN9730
Produkt ist nicht verfügbar