Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (280574) > Seite 1528 nach 4677
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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JANSD2N2219A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N2219AP | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSH2N2219AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N2219A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N2219AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N2219A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSL2N2219A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSH2N2219A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N2219AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JAN2N2219S | Microchip Technology |
Description: TRANS NPN 30V 0.8A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Qualification: MIL-PRF-19500/251 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSL2N2219 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N2219 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N2219 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV2N2219AP | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSL2N2219AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N2219AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N2219E3 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N2219 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSL2N3019S | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N3019E3 | Microchip Technology |
Description: TRANS NPN 80V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSL2N3019 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSF2N3019 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSF2N3019S | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JAN2N3019A | Microchip Technology |
Description: TRANS NPN 80V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Qualification: MIL-PRF-19500/391 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N3019S | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N3019S | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX2N3019A | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV2N3019P | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTXV2N3019A | Microchip Technology |
Description: SMALL-SIGNAL BJT Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N3019S | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N3019A | Microchip Technology |
Description: TRANS NPN 80V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANTX2N3019SP | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSM2N3019 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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2N3019P | Microchip Technology |
Description: TRANS NPN 80V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSD2N3019 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
2N3019SP | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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JANSP2N3019 | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
MXSMBJ13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC SMBJPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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USB50824C/TR7 | Microchip Technology |
Description: TVS DIODE 24VWM 57VC 8SOICBidirectional Channels: 2 Supplier Device Package: 8-SOIC Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 3pF @ 1MHz Applications: Ethernet Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 57V Voltage - Breakdown (Min): 26.7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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USB50812C/TR7 | Microchip Technology |
Description: TVS DIODE 12VWM 26VC 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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USB50812C/TR7 | Microchip Technology |
Description: TVS DIODE 12VWM 26VC 8-SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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USB50815C-A/TR7 | Microchip Technology |
Description: TVS DIODE 15VWM 32VC 8-SOVoltage - Reverse Standoff (Typ): 15V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 3pF @ 1MHz Applications: Ethernet Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 32V Voltage - Breakdown (Min): 16.7V Bidirectional Channels: 2 Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| VS-720-LPF-NBB-240M000000 | Microchip Technology |
Description: VS-720-LPF-NBB-240M000000Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| EV11L78A | Microchip Technology |
Description: USB-C BASIC SINK ADAPTER EVAL Part Status: Discontinued at Digi-Key Embedded: No Primary Attributes: USB PD 3.0 Supplied Contents: Board(s) Utilized IC / Part: UPD301C Type: Power Management Function: USB PD Controller (Power Delivery) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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EV39W84A | Microchip Technology | Description: LX34070 90 DEGREE ROTARY KIT |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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EV65W60A | Microchip Technology | Description: LX34070 90 DEGREE ROTARY EVB |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC1122AE1-100.0000 | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ LVPECLBase Resonator: MEMS Frequency: 100 MHz Height - Seated (Max): 0.035" (0.90mm) Current - Supply (Max): 58mA Voltage - Supply: 2.25V ~ 3.6V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Type: XO (Standard) Function: Enable/Disable Output: LVPECL Mounting Type: Surface Mount Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Package / Case: 6-SMD, No Lead Exposed Pad Packaging: Tube |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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TC1224-4.0VCTTR | Microchip Technology |
Description: IC REG LINEAR 4V 100MA SOT23-5Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 100mA PSRR: 64dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 4V Supplier Device Package: SOT-23-5 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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TC1224-4.0VCTTR | Microchip Technology |
Description: IC REG LINEAR 4V 100MA SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 4V Control Features: Enable Part Status: Active PSRR: 64dB (1kHz) Voltage Dropout (Max): 0.25V @ 100mA Protection Features: Over Current, Over Temperature |
auf Bestellung 4352 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC01T-E/ST | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC01T-E/ST | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 7025 Stücke: Lieferzeit 10-14 Tag (e) |
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CDLL4478/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Current - Reverse Leakage @ Vr: 50 nA @ 28.8 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-213AB Impedance (Max) (Zzt): 27 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CDLL4467/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CDLL4475/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-213AB Impedance (Max) (Zzt): 18 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CDLL4463/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-213AB Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
CDLL4462/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: DO-213AB Impedance (Max) (Zzt): 2.5 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| CDLL4491 | Microchip Technology | Description: DIODE ZENER 120V 1.5W DO213AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| CDLL4492 | Microchip Technology | Description: DIODE ZENER 130V 1.5W DO213AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
|
CDLL4465/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| CDLL4495 | Microchip Technology | Description: DIODE ZENER 180V 1.5W DO213AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANSD2N2219A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2219AP |
![]() |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSH2N2219AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSM2N2219A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSM2N2219AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSP2N2219A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSL2N2219A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSH2N2219A |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANSD2N2219AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JAN2N2219S |
![]() |
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| JANSL2N2219 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JANSM2N2219 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JANSD2N2219 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JANTXV2N2219AP |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| JANSL2N2219AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JANSP2N2219AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| 2N2219E3 |
![]() |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| JANSP2N2219 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| JANSL2N3019S |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| 2N3019E3 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| JANSL2N3019 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| JANSF2N3019 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| JANSF2N3019S |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| JAN2N3019A |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/391
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| JANSM2N3019S |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| JANSP2N3019S |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| JANTX2N3019A |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| JANTXV2N3019P |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| JANTXV2N3019A |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: SMALL-SIGNAL BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| JANSD2N3019S |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N3019A |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| JANTX2N3019SP |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| JANSM2N3019 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| 2N3019P |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| JANSD2N3019 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| 2N3019SP |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| JANSP2N3019 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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| MXSMBJ13Ae3 |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 13VWM 21.5VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| USB50824C/TR7 |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 57VC 8SOIC
Bidirectional Channels: 2
Supplier Device Package: 8-SOIC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 26.7V
Description: TVS DIODE 24VWM 57VC 8SOIC
Bidirectional Channels: 2
Supplier Device Package: 8-SOIC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 26.7V
Produkt ist nicht verfügbar
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| USB50812C/TR7 |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
Description: TVS DIODE 12VWM 26VC 8-SO
Produkt ist nicht verfügbar
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| USB50812C/TR7 |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
Description: TVS DIODE 12VWM 26VC 8-SO
Produkt ist nicht verfügbar
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| USB50815C-A/TR7 |
![]() |
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 32VC 8-SO
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 16.7V
Bidirectional Channels: 2
Supplier Device Package: 8-SO
Description: TVS DIODE 15VWM 32VC 8-SO
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 16.7V
Bidirectional Channels: 2
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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| EV11L78A |
Hersteller: Microchip Technology
Description: USB-C BASIC SINK ADAPTER EVAL
Part Status: Discontinued at Digi-Key
Embedded: No
Primary Attributes: USB PD 3.0
Supplied Contents: Board(s)
Utilized IC / Part: UPD301C
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Bulk
Description: USB-C BASIC SINK ADAPTER EVAL
Part Status: Discontinued at Digi-Key
Embedded: No
Primary Attributes: USB PD 3.0
Supplied Contents: Board(s)
Utilized IC / Part: UPD301C
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Bulk
Produkt ist nicht verfügbar
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| EV39W84A |
Hersteller: Microchip Technology
Description: LX34070 90 DEGREE ROTARY KIT
Description: LX34070 90 DEGREE ROTARY KIT
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 326.62 EUR |
| EV65W60A |
Hersteller: Microchip Technology
Description: LX34070 90 DEGREE ROTARY EVB
Description: LX34070 90 DEGREE ROTARY EVB
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 160.03 EUR |
| DSC1122AE1-100.0000 |
![]() |
Hersteller: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ LVPECL
Base Resonator: MEMS
Frequency: 100 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 58mA
Voltage - Supply: 2.25V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead Exposed Pad
Packaging: Tube
Description: MEMS OSC XO 100.0000MHZ LVPECL
Base Resonator: MEMS
Frequency: 100 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 58mA
Voltage - Supply: 2.25V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead Exposed Pad
Packaging: Tube
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 25+ | 4.93 EUR |
| 100+ | 4.76 EUR |
| TC1224-4.0VCTTR |
![]() |
Hersteller: Microchip Technology
Description: IC REG LINEAR 4V 100MA SOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 100mA
PSRR: 64dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4V
Supplier Device Package: SOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 4V 100MA SOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 100mA
PSRR: 64dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4V
Supplier Device Package: SOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| TC1224-4.0VCTTR |
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Hersteller: Microchip Technology
Description: IC REG LINEAR 4V 100MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Part Status: Active
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 4V 100MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Part Status: Active
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.65 EUR |
| 24FC01T-E/ST |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.55 EUR |
| 24FC01T-E/ST |
![]() |
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 7025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| 39+ | 0.55 EUR |
| CDLL4478/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 50 nA @ 28.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 27 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 50 nA @ 28.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 27 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4467/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4475/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4463/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4462/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4491 |
Hersteller: Microchip Technology
Description: DIODE ZENER 120V 1.5W DO213AB
Description: DIODE ZENER 120V 1.5W DO213AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| CDLL4492 |
Hersteller: Microchip Technology
Description: DIODE ZENER 130V 1.5W DO213AB
Description: DIODE ZENER 130V 1.5W DO213AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4465/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| CDLL4495 |
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 1.5W DO213AB
Description: DIODE ZENER 180V 1.5W DO213AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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