Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (337664) > Seite 1530 nach 5628
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AT93C56A-10TU-2.7-T | Microchip Technology |
 Description: IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
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AT93C56A-10TU-1.8-T | Microchip Technology |
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 10ms Memory Interface: 3-Wire Serial Memory Organization: 256 x 8, 128 x 16 DigiKey Programmable: Not Verified |
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JANTX1N6116/TR | Microchip Technology |
Description: BI-DIRECTIONAL TVS Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.4A Voltage - Reverse Standoff (Typ): 20.6V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX1N6116/TR | Microchip Technology |
Description: BI-DIRECTIONAL TVS Packaging: Cut Tape (CT) Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.4A Voltage - Reverse Standoff (Typ): 20.6V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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AT93C56B-XPD-T | Microchip Technology |
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: 3-Wire Serial Memory Organization: 256 x 8, 128 x 16 DigiKey Programmable: Not Verified |
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MCP48CVB04T-E/ML | Microchip Technology |
Description: IC DAC 8BIT V-OUT 20QFN Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Voltage - Buffered Mounting Type: Surface Mount Number of Bits: 8 Data Interface: SPI Reference Type: External, Internal, Supply Operating Temperature: -40°C ~ 125°C Voltage - Supply, Analog: 1.8V ~ 5.5V Voltage - Supply, Digital: 1.8V ~ 5.5V Settling Time: 16µs (Typ) Supplier Device Package: 20-QFN (4x4) Architecture: R-2R Number of D/A Converters: 4 INL/DNL (LSB): ±0.1, ±0.1 Differential Output: No DigiKey Programmable: Not Verified |
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MCP48CVB18T-E/ML | Microchip Technology |
Description: IC DAC 10BIT V-OUT 20QFN Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Voltage - Buffered Mounting Type: Surface Mount Number of Bits: 10 Data Interface: SPI Reference Type: External, Internal, Supply Operating Temperature: -40°C ~ 125°C Voltage - Supply, Analog: 1.8V ~ 5.5V Voltage - Supply, Digital: 1.8V ~ 5.5V Settling Time: 16µs (Typ) Supplier Device Package: 20-QFN (4x4) Architecture: R-2R Number of D/A Converters: 8 INL/DNL (LSB): ±0.25, ±0.25 Differential Output: No DigiKey Programmable: Not Verified |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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MCP48CVB28T-E/ML | Microchip Technology |
Description: QCTAL CHANNEL, 12-BIT, VOLATILE, |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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MCP47CVB14-E/ML | Microchip Technology |
Description: IC DAC 10BIT V-OUT 20QFN Packaging: Tube Package / Case: 20-VFQFN Exposed Pad Output Type: Voltage - Buffered Mounting Type: Surface Mount Number of Bits: 10 Data Interface: I2C Reference Type: External, Internal, Supply Operating Temperature: -40°C ~ 125°C Voltage - Supply, Analog: 1.8V ~ 5.5V Voltage - Supply, Digital: 1.8V ~ 5.5V Settling Time: 16µs (Typ) Supplier Device Package: 20-QFN (4x4) Architecture: R-2R Number of D/A Converters: 4 INL/DNL (LSB): ±0.25, ±0.25 Differential Output: No Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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MCP47CMB14-E/ML | Microchip Technology |
Description: IC DAC 10BIT V-OUT 20QFN Packaging: Tube Package / Case: 20-VFQFN Exposed Pad Output Type: Voltage - Buffered Mounting Type: Surface Mount Number of Bits: 10 Data Interface: I2C Reference Type: External, Internal, Supply Operating Temperature: -40°C ~ 125°C Voltage - Supply, Analog: 1.8V ~ 5.5V Voltage - Supply, Digital: 1.8V ~ 5.5V Settling Time: 16µs (Typ) Supplier Device Package: 20-QFN (4x4) Architecture: R-2R Number of D/A Converters: 4 INL/DNL (LSB): ±0.25, ±0.25 Differential Output: No DigiKey Programmable: Not Verified |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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MMA040PP5 | Microchip Technology |
Description: IC RF AMP GPS 0HZ-27GHZ 32QFN Packaging: Tray Package / Case: 32-TFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 0Hz ~ 27GHz RF Type: General Purpose Voltage - Supply: 8V Gain: 15.5dB Current - Supply: 60mA Noise Figure: 2dB P1dB: 16dBm Test Frequency: 6GHz ~ 12GHz Supplier Device Package: 32-QFN (5x5) |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| MXSMLG85CA | Microchip Technology |
Description: TVS DIODE 85VWM 137VC SMLG |
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MPS2R10-606/TR | Microchip Technology |
Description: DIODE SI PIN NON HERMETIC MMSM Packaging: Tape & Reel (TR) Diode Type: PIN - 1 Pair Common Anode Operating Temperature: -65°C ~ 125°C Voltage - Peak Reverse (Max): 150V Current - Max: 200 mA Power Dissipation (Max): 1 W |
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MPS2R10-606/TR | Microchip Technology |
Description: DIODE SI PIN NON HERMETIC MMSM Packaging: Cut Tape (CT) Diode Type: PIN - 1 Pair Common Anode Operating Temperature: -65°C ~ 125°C Voltage - Peak Reverse (Max): 150V Current - Max: 200 mA Power Dissipation (Max): 1 W |
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.jpg "MSMCJLCE40Ae3") |
MSMCJLCE40Ae3 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 23.3A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MSMLG150A | Microchip Technology |
Description: TVS DIODE 150VWM 243VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-215AB (SMLG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MSMLG100CA | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MSMLG120CAe3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.6A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMLG12CA | Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 150.6A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMLG13CA | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139.4A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-215AB (SMLG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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.jpg "MSMCJLCE45A") |
MSMCJLCE45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
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MSMCJLCE90A | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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MSMLG100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-215AB (SMLG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXLSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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| MSMCJ10CA/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
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| MASMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
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MASMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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| MSMCJ10CAE3/TR | Microchip Technology |
Description: TVS DIODE 10VWM 17VC SMCJ |
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MXLSMCJ10CAe3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMCJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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JANS1N4494C | Microchip Technology |
Description: DIODE ZENER 160V 1.5W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1000 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Military Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 128 V Qualification: MIL-PRF-19500/406 |
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JANTXV1N4494C | Microchip Technology |
Description: DIODE ZENER 160V 1.5W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1000 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Military Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 250 nA @ 128 V Qualification: MIL-PRF-19500/406 |
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JANSP2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANKCBM2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSD2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSP2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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JANSR2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Packaging: Tape & Reel (TR) Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
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ATWINC3400-MR210UA143-T | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Packaging: Cut Tape (CT) Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 331 Stücke: Lieferzeit 10-14 Tag (e) |
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ATWINC3400-MR210UA143 | Microchip Technology |
Description: RF TXRX MOD BT WIFIU.FL SMD Packaging: Tray Package / Case: 36-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB ROM, 420kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 18.3dBm Data Rate: 400kbps Protocol: 802.11b/g/n, Bluetooth v5.0 Current - Receiving: 23.7mA Current - Transmitting: 24mA Antenna Type: Antenna Not Included, U.FL Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| Jantxv2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
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| Jantx2N6308 | Microchip Technology |
Description: TRANS NPN 350V 8A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
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JAN2N6301 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 500 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W Grade: Military Qualification: MIL-PRF-19500/539 |
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| JANTXV2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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| JAN2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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| JANTX2N6306 | Microchip Technology |
Description: TRANS NPN 250V 8A TO204AA |
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JANTX2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 500UA TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 500 µA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W Qualification: MIL-PRF-19500/539 |
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2N6301E3 | Microchip Technology |
Description: TRANS NPN DARL 80V 500UA TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 500 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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| 2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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2N6306 | Microchip Technology |
Description: NPN TRANSISTOR |
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| 2N6308T1 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 125 W |
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| JANTX2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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| JANTXV2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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Im Einkaufswagen Stück im Wert von UAH | |||||
| 2N6303 | Microchip Technology | Description: POWER BJT |
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2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W |
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| JAN2N6301P | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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| 2N6306T1 | Microchip Technology | Description: POWER BJT |
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| JANTX2N6301 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
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 |
JANTXV1N4123-1 | Microchip Technology |
Description: DIODE ZENER 39V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V Qualification: MIL-PRF-19500/435 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AT93C56A-10TU-2.7-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT SPI 2MHZ 8TSSOP
Description: IC EEPROM 2KBIT SPI 2MHZ 8TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT93C56A-10TU-1.8-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| JANTX1N6116/TR |
Hersteller: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.36 EUR |
| JANTX1N6116/TR |
Hersteller: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
auf Bestellung 100 Stücke:
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| AT93C56B-XPD-T |
|
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCP48CVB04T-E/ML |
|
Hersteller: Microchip Technology
Description: IC DAC 8BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
Description: IC DAC 8BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCP48CVB18T-E/ML |
|
Hersteller: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 8
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 8
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3300+ | 15 EUR |
| MCP48CVB28T-E/ML |
|
Hersteller: Microchip Technology
Description: QCTAL CHANNEL, 12-BIT, VOLATILE,
Description: QCTAL CHANNEL, 12-BIT, VOLATILE,
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3300+ | 15.51 EUR |
| MCP47CVB14-E/ML |
|
Hersteller: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.79 EUR |
| 25+ | 8.14 EUR |
| MCP47CMB14-E/ML |
|
Hersteller: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.26 EUR |
| MMA040PP5 |
|
Hersteller: Microchip Technology
Description: IC RF AMP GPS 0HZ-27GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 27GHz
RF Type: General Purpose
Voltage - Supply: 8V
Gain: 15.5dB
Current - Supply: 60mA
Noise Figure: 2dB
P1dB: 16dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
Description: IC RF AMP GPS 0HZ-27GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 27GHz
RF Type: General Purpose
Voltage - Supply: 8V
Gain: 15.5dB
Current - Supply: 60mA
Noise Figure: 2dB
P1dB: 16dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 188.74 EUR |
| MXSMLG85CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 85VWM 137VC SMLG
Description: TVS DIODE 85VWM 137VC SMLG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS2R10-606/TR |
|
Hersteller: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS2R10-606/TR |
|
Hersteller: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJLCE40Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG150A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLG100CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Stück im Wert von UAH
| MSMLG120CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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Stück im Wert von UAH
| MSMLG12CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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Im Einkaufswagen
Stück im Wert von UAH
| MSMLG13CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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Stück im Wert von UAH
| MSMCJLCE45A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MSMCJLCE90A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLG100Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXLSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MSMCJ10CA/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
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| MASMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MASMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MSMCJ10CAE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
Description: TVS DIODE 10VWM 17VC SMCJ
Produkt ist nicht verfügbar
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| MXLSMCJ10CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXSMCJ10CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
Produkt ist nicht verfügbar
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| JANS1N4494C |
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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Stück im Wert von UAH
| JANTXV1N4494C |
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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Stück im Wert von UAH
| JANSP2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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Stück im Wert von UAH
| JANKCBM2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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Stück im Wert von UAH
| JANSD2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSP2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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Stück im Wert von UAH
| JANSR2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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| ATWINC3400-MR210UA143-T |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.1 EUR |
| ATWINC3400-MR210UA143 |
|
Hersteller: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.14 EUR |
| Jantxv2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jantx2N6308 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6301 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANTX2N6306 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
Description: TRANS NPN 250V 8A TO204AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N6300 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
Description: TRANS NPN DARL 60V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6301E3 |
Hersteller: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6306 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6308T1 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N6303 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6300 |
|
Hersteller: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6301P |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6306T1 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N6301 |
|
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N4123-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH