Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276894) > Seite 1541 nach 4615
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JANTX1N3595-1/TR | Microchip Technology |
 Description: DIODE STD 125V 150MA DO204AHPackaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-S-19500-241 |
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JANTXV1N3595A-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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| JANHCB1N3595 | Microchip Technology |
Description: DIODE GEN PURP 125V 200MA DO35 |
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JAN1N3595UR-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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| JANKCB1N3595 | Microchip Technology |
Description: DIODE GEN PURP 125V 200MA DO35 |
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JAN1N3595A-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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JANTXV1N3595UR-1/TR | Microchip Technology | Description: DIODE GP 125V 150MA DO213AA |
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JAN1N3595-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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1N3595UR-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
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1N3595-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
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JANS1N3595US/TR | Microchip Technology | Description: DIODE GEN PURP 200MA B SQ-MELF |
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JANTX1N3595US/TR | Microchip Technology |
Description: DIODE STANDARD 200MA B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-S-19500-241 |
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JANS1N3595A-1 | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 |
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JANTXV1N3595-1/TR | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 Supplier Device Package: DO-204AH (DO-35) |
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JAN1N3595US/TR | Microchip Technology |
Description: DIODE STANDARD 125V 4A B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Grade: Military Qualification: MIL-PRF-19500/241 |
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JANTXV1N3595US/TR | Microchip Technology |
Description: DIODE STANDARD 125V 4A B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Grade: Military Qualification: MIL-PRF-19500/241 |
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JAN1N3595US | Microchip Technology |
Description: DIODE STANDARD 125V 4A B SQMELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Grade: Military Qualification: MIL-PRF-19500/241 |
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JANHCA1N5532C | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5532A/TR | Microchip Technology |
Description: DIODE ZENER 12V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V |
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1N4743AUR-1E3 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
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| 1N4743AE3 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO204AL Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
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VC-820-JAE-FAAN-66M6660000 | Microchip Technology | Description: VC-820-JAE-FAAN-66M6660000 |
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| VT-501-EAJ-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO |
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| VT-840-EFE-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN |
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| VT-820-JFH-256A-10M0000000 | Microchip Technology |
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE |
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| VT-501-EAE-256A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO |
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| VT-501-EAE-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO |
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MIC5245-3.3BM5-TR | Microchip Technology |
Description: IC REG LINEAR 3.3V 150MA SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
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MXSMBJ160CAe3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MASMBJ160CAe3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXLSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSCSM170AM15CT3AG | Microchip Technology |
Description: MOSFET 2N-CH 1700V 181A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 862W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.66A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 117.33V Voltage - Clamping (Max) @ Ipp: 187.74V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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| JANTXV1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL |
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JAN1N6133US/TR | Microchip Technology | Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JAN1N6133US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6169US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6133US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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JANTXV1N6169US/TR | Microchip Technology | Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL |
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| JANTXV1N6169US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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MSMBG7.0CA | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMBG |
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| 2N5584 | Microchip Technology | Description: POWER BJT |
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AT25FS040N-SH27-B | Microchip Technology |
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 50µs Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT25FS010N-SH27-B | Microchip Technology |
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC |
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1N5936B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| 1N702A/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| PD-9524-10GC/AC | Microchip Technology | Description: 24-PORT BT 60W 10G 1KW |
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| PD-9506-10GC/AC | Microchip Technology |
Description: 6-PORT BT 60W 10G 450W Packaging: Bulk Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm) Voltage - Output: 54V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10Gbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3bt Current - Output: 1.11 A Number of Ports: 6 Standard Number: 62368-1 |
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| PD-9512-10GC/AC | Microchip Technology | Description: 12-PORT BT 60W 10G 1KW |
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| PD-9506-10GC/AC-JP | Microchip Technology |
Description: 6-PORT BT 60W 10G 450W JP POWER Packaging: Bulk Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm) Voltage - Output: 54V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10Gbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3bt Current - Output: 1.11 A Number of Ports: 6 Standard Number: 62368-1 |
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| PD-9512-10GC/AC-JP | Microchip Technology | Description: 12-PORT BT 60W 10G 1KW JP POWER |
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| PD-9506-10GC/AC-US | Microchip Technology |
Description: 6-PORT BT 60W 10G 450W US POWER Packaging: Bulk Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm) Voltage - Output: 54V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10Gbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3bt Current - Output: 1.11 A Number of Ports: 6 Standard Number: 62368-1 |
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MASMBJ58CAe3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXSMBJ58CAe3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| MXLSMCG36CAe3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| VCC1-103-19M4400000 | Microchip Technology |
Description: VCC1-103-19M4400000 Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
JAN1N6104AUS | Microchip Technology |
Description: TVS DIODE 6.2VWM 12.1VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.3A Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.79V Voltage - Clamping (Max) @ Ipp: 12.1V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N3595-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N3595A-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANHCB1N3595 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 125V 200MA DO35
Description: DIODE GEN PURP 125V 200MA DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N3595UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANKCB1N3595 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 125V 200MA DO35
Description: DIODE GEN PURP 125V 200MA DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N3595A-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N3595UR-1/TR |
Hersteller: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Description: DIODE GP 125V 150MA DO213AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N3595-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3595UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3595-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N3595US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200MA B SQ-MELF
Description: DIODE GEN PURP 200MA B SQ-MELF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N3595US/TR |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 200MA B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Description: DIODE STANDARD 200MA B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N3595A-1 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Description: DIODE GEN PURP 125V 150MA DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N3595-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Supplier Device Package: DO-204AH (DO-35)
Description: DIODE STD 125V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Supplier Device Package: DO-204AH (DO-35)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N3595US/TR |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N3595US/TR |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N3595US |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANHCA1N5532C |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5532A/TR |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4743AUR-1E3 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 13V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4743AE3 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 13V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VC-820-JAE-FAAN-66M6660000 |
Hersteller: Microchip Technology
Description: VC-820-JAE-FAAN-66M6660000
Description: VC-820-JAE-FAAN-66M6660000
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VT-501-EAJ-106A-10M0000000 |
|
Hersteller: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VT-840-EFE-106A-10M0000000 |
|
Hersteller: Microchip Technology
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VT-820-JFH-256A-10M0000000 |
|
Hersteller: Microchip Technology
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VT-501-EAE-256A-10M0000000 |
|
Hersteller: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
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| VT-501-EAE-106A-10M0000000 |
|
Hersteller: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
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| MIC5245-3.3BM5-TR |
|
Hersteller: Microchip Technology
Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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| MXSMBJ160CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MASMBJ160CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MSMBJ160CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MXSMBJ160CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MXLSMBJ160CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MSCSM170AM15CT3AG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1700V 181A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 862W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Description: MOSFET 2N-CH 1700V 181A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 862W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 495.02 EUR |
| JAN1N6133 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.66A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.66A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Stück im Wert von UAH
| JANTXV1N6133 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
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| JAN1N6133US/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| JAN1N6133US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| JANTX1N6169US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| JANTX1N6133US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| JANTXV1N6169US/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| JANTX1N6133 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
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| JANTXV1N6169US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
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| MSMBG7.0CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMBG
Description: TVS DIODE 7VWM 12VC SMBG
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| 2N5584 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
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| AT25FS040N-SH27-B |
|
Hersteller: Microchip Technology
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 50µs
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 50µs
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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| AT25FS010N-SH27-B |
|
Hersteller: Microchip Technology
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC
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| 1N5936B/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| 1N702A/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| PD-9524-10GC/AC |
Hersteller: Microchip Technology
Description: 24-PORT BT 60W 10G 1KW
Description: 24-PORT BT 60W 10G 1KW
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| PD-9506-10GC/AC |
Hersteller: Microchip Technology
Description: 6-PORT BT 60W 10G 450W
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
Description: 6-PORT BT 60W 10G 450W
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
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| PD-9512-10GC/AC |
Hersteller: Microchip Technology
Description: 12-PORT BT 60W 10G 1KW
Description: 12-PORT BT 60W 10G 1KW
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| PD-9506-10GC/AC-JP |
Hersteller: Microchip Technology
Description: 6-PORT BT 60W 10G 450W JP POWER
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
Description: 6-PORT BT 60W 10G 450W JP POWER
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
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| PD-9512-10GC/AC-JP |
Hersteller: Microchip Technology
Description: 12-PORT BT 60W 10G 1KW JP POWER
Description: 12-PORT BT 60W 10G 1KW JP POWER
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| PD-9506-10GC/AC-US |
Hersteller: Microchip Technology
Description: 6-PORT BT 60W 10G 450W US POWER
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
Description: 6-PORT BT 60W 10G 450W US POWER
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Current - Output: 1.11 A
Number of Ports: 6
Standard Number: 62368-1
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Stück im Wert von UAH
| MASMBJ58CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 58VWM 93.6VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXSMBJ58CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 58VWM 93.6VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| MXLSMCG36CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC SMCG
Description: TVS DIODE 36VWM 58.1VC SMCG
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| VCC1-103-19M4400000 |
|
Hersteller: Microchip Technology
Description: VCC1-103-19M4400000
Packaging: Tape & Reel (TR)
Part Status: Active
Description: VCC1-103-19M4400000
Packaging: Tape & Reel (TR)
Part Status: Active
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| JAN1N6104AUS |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6.2VWM 12.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.2VWM 12.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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