Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276890) > Seite 1556 nach 4615
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MASMCJ36Ae3 | Microchip Technology |
 Description: TVS DIODE 36VWM 58.1VC DO214ABPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
.jpg "MXSMCJ36A") |
MXSMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MASMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
auf Bestellung 1812 Stücke: Lieferzeit 10-14 Tag (e) |
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANS1N6621 | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTXV1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTXV1N6623US | Microchip Technology |
Description: DIODE GEN PURP 880V 1A D5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTXV1N6623US/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JAN1N6623/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6622US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JAN1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANS1N6621/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JAN1N6620U | Microchip Technology | Description: DIODE GEN PURP 200V 1.2A A-MELF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTXV1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JAN1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTXV1N6621US/TR | Microchip Technology |
Description: DIODE GEN PURP 440V 1.2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V Qualification: MIL-PRF-19500/585 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6620US/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| 1N6620E3/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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JANTX1N6627U/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6620/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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JANTX1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ70A | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ54A | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.4A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ64CAe3 | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ43CA | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ5.0CAe3 | Microchip Technology |
Description: TVS DIODE 5VWM 9.2VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.2A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ28CAe3 | Microchip Technology |
Description: TVS DIODE 28VWM 45.4VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ7.5A | Microchip Technology |
Description: TVS DIODE 7.5VWM 12.9VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 232.6A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ7.0Ae3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 250A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ7.0CAe3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ70Ae3 | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.6A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ6.5CAE3 | Microchip Technology |
Description: TVS DIODE 6.5VWM 11.2VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ64Ae3 | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 29.2A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ64CA | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ6.5CA | Microchip Technology |
Description: TVS DIODE 6.5VWM 11.2VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ70CA | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ22Ae3 | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84.4A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ26A | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71.2A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ60CA | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ58CAE3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MSMLJ70CAe3 | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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93LC46CT-E/SN | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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93LC46CT-E/SN | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2752 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN1N4989C | Microchip Technology |
Description: DIODE ZENER 200V 5W E AXIAL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MIC3002GML | Microchip Technology |
Description: FOM MANAGEMENT IC WITH INTERNAL Packaging: Bulk Package / Case: 24-VFQFN Exposed Pad, 24-MLF® Mounting Type: Surface Mount Type: Laser Diode Controller (Fiber Optic) Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 3.6V Data Rate: 10Gbps Supplier Device Package: 24-MLF® (4x4) Number of Channels: 1 Current - Supply: 2.3 mA |
auf Bestellung 8550 Stücke: Lieferzeit 10-14 Tag (e) |
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MIC3003GML-TR | Microchip Technology |
Description: FOM CONTROLLER WITH INTERNAL CAL Packaging: Bulk |
auf Bestellung 58385 Stücke: Lieferzeit 10-14 Tag (e) |
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24FC256T-E/OT | Microchip Technology |
Description: IC EEPROM 256KBIT I2C SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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24FC256T-I/OT | Microchip Technology |
Description: IC EEPROM 256KBIT I2C SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| 2N6046 | Microchip Technology |
Description: TRANS NPN 60V 20A TO-63 Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-63 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 114 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| 1N5810/TR | Microchip Technology |
Description: DIODE GEN PURP 6A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: Axial Part Status: Active Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
 |
2293400-R | Microchip Technology |
Description: HBA 1100-4I SINGLE Packaging: Bulk Interface: PCI Express Type: SAS/SATA Number of Ports: 4 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
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 |
1N914UR-1 | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| 2N907AE4 | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| DSA612NA1A-01UWTVAO | Microchip Technology |
Description: IC CLOCK GENERATOR 6VFLGA Packaging: Tape & Reel (TR) Package / Case: 6-VFLGA Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 100MHz Type: Clock Generator Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.71V ~ 3.63V Ratio - Input:Output: 0:2 Differential - Input:Output: No/No Supplier Device Package: 6-VFLGA (2x1.6) PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| DSA612PA3A-01UDVAO | Microchip Technology |
Description: IC CLOCK GENERATOR 6VFLGA Packaging: Bag Package / Case: 6-VFLGA Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 100MHz Type: Clock Generator Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.71V ~ 3.63V Ratio - Input:Output: 0:2 Differential - Input:Output: No/No Supplier Device Package: 6-VFLGA (1.6x1.2) PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MASMCJ36Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXSMCJ36A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Description: TVS DIODE 36VWM 58.1VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MASMCJ36A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LND150N3-G-P014 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 1812 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 25+ | 0.83 EUR |
| LND150N3-G-P014 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N6621 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6623US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
Description: DIODE GEN PURP 880V 1A D5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6623US/TR |
|
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6623/TR |
|
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6622US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANS1N6621/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6620U |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1.2A A-MELF
Description: DIODE GEN PURP 200V 1.2A A-MELF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6628US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6623US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6621US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6620US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6620E3/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6627U/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6628US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6620/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6623US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ70A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MSMLJ54A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ64CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ43CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Description: TVS DIODE 43VWM 69.4VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ5.0CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC DO214AB
Description: TVS DIODE 5VWM 9.2VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ28CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AB
Description: TVS DIODE 28VWM 45.4VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ7.5A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ7.0Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ7.0CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Description: TVS DIODE 7VWM 12VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ70Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ6.5CAE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ64Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ64CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ6.5CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ70CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ22Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ26A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ60CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ58CAE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ45A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ70CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 93LC46CT-E/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 93LC46CT-E/SN |
|
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 2752 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| JAN1N4989C |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W E AXIAL
Description: DIODE ZENER 200V 5W E AXIAL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIC3002GML |
|
Hersteller: Microchip Technology
Description: FOM MANAGEMENT IC WITH INTERNAL
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad, 24-MLF®
Mounting Type: Surface Mount
Type: Laser Diode Controller (Fiber Optic)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V
Data Rate: 10Gbps
Supplier Device Package: 24-MLF® (4x4)
Number of Channels: 1
Current - Supply: 2.3 mA
Description: FOM MANAGEMENT IC WITH INTERNAL
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad, 24-MLF®
Mounting Type: Surface Mount
Type: Laser Diode Controller (Fiber Optic)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V
Data Rate: 10Gbps
Supplier Device Package: 24-MLF® (4x4)
Number of Channels: 1
Current - Supply: 2.3 mA
auf Bestellung 8550 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 10.85 EUR |
| MIC3003GML-TR |
|
auf Bestellung 58385 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 12.52 EUR |
| 24FC256T-E/OT |
|
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 256KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 24FC256T-I/OT |
|
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 256KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6046 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 20A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 114 W
Description: TRANS NPN 60V 20A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 114 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5810/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 6A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Axial
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 6A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Axial
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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| 2293400-R |
|
Hersteller: Microchip Technology
Description: HBA 1100-4I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
Description: HBA 1100-4I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 386.72 EUR |
| 1N914UR-1 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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| DSA612NA1A-01UWTVAO |
Hersteller: Microchip Technology
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2x1.6)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2x1.6)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| DSA612PA3A-01UDVAO |
Hersteller: Microchip Technology
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Bag
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (1.6x1.2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Bag
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (1.6x1.2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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