Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (338011) > Seite 1552 nach 5634
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N6626US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTXV1N6626/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTX1N6626/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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1N6626UE3 | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JAN1N6626U/TR | Microchip Technology | Description: UFR,FRR |
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1N6626UE3/TR | Microchip Technology | Description: UFR,FRR |
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JAN1N6626/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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1N6626U | Microchip Technology | Description: UFR,FRR |
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JANTXV1N6626U/TR | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
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1N6626U/TR | Microchip Technology | Description: UFR,FRR |
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1N6626/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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ATSAMD51P19A-AFT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 128TQFP Packaging: Tape & Reel (TR) Package / Case: 128-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM Supplier Device Package: 128-TQFP (14x14) Grade: Automotive Number of I/O: 99 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ATSAMD51P19A-AFT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 128TQFP Packaging: Cut Tape (CT) Package / Case: 128-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM Supplier Device Package: 128-TQFP (14x14) Grade: Automotive Number of I/O: 99 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 780 Stücke: Lieferzeit 21-28 Tag (e) |
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MCP6564-E/STVAO | Microchip Technology |
Description: IC COMPARATOR 4 GEN PUR 14TSSOP Packaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: CMOS, Push-Pull, TTL Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V Supplier Device Package: 14-TSSOP Propagation Delay (Max): 80ns Current - Quiescent (Max): 130µA Voltage - Input Offset (Max): 10mV @ 5.5V Current - Input Bias (Max): 1pA @ 5.5V Current - Output (Typ): 50mA CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR Hysteresis: 5mV |
Produkt ist nicht verfügbar |
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MCP6567-E/MSVAO | Microchip Technology |
Description: IC COMPARATOR 2 GEN PUR 8MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: CMOS, Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP Propagation Delay (Max): 80ns Current - Quiescent (Max): 130µA Voltage - Input Offset (Max): 10mV @ 5.5V Current - Input Bias (Max): 1pA @ 5.5V Current - Output (Typ): 50mA CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR Hysteresis: 5mV |
Produkt ist nicht verfügbar |
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MCP6567T-E/MSVAO | Microchip Technology | Description: DUAL 1.8V OPEN DRAIN COMPARATOR |
Produkt ist nicht verfügbar |
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MCP6564T-E/SLVAO | Microchip Technology |
Description: IC COMPARATOR 4 GEN PUR 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: CMOS, Push-Pull, Rail-to-Rail, TTL Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V Supplier Device Package: 14-SOIC Propagation Delay (Max): 80ns Current - Quiescent (Max): 130µA Voltage - Input Offset (Max): 10mV @ 5.5V Current - Input Bias (Max): 1pA @ 5.5V Current - Output (Typ): 50mA CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR Hysteresis: 5mV |
Produkt ist nicht verfügbar |
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MCP6567AT-E/UN | Microchip Technology |
Description: IC COMP DUAL 1.8V OD 10MSOP Packaging: Tape & Reel (TR) |
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MCP6567AT-E/MF | Microchip Technology |
Description: IC COMP DUAL 1.8V OD 10DFN Packaging: Tape & Reel (TR) |
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MCP6567A-E/MF | Microchip Technology |
Description: IC COMP DUAL 1.8V OD 10DFN Packaging: Tube |
Produkt ist nicht verfügbar |
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CDLL4473/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V |
Produkt ist nicht verfügbar |
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TC51N2202ECBTR | Microchip Technology | Description: IC SUPERVISOR 1 CHANNEL SOT23A-3 |
auf Bestellung 3041 Stücke: Lieferzeit 21-28 Tag (e) |
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1N914UR-1/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
Produkt ist nicht verfügbar |
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MNS1N5822US | Microchip Technology |
Description: DIODE SCHOTTKY 40V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Grade: Military Qualification: MIL-PRF-19500/620 |
Produkt ist nicht verfügbar |
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JAN1N2844B | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-204AD (TO-3) Part Status: Active Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V Grade: Military Qualification: MIL-PRF-19500/114 |
Produkt ist nicht verfügbar |
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MX553NBF155M520-TR | Microchip Technology |
Description: XTAL OSC XO 155.5200MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 2.375V ~ 3.63V Current - Supply (Max): 120mA Height - Seated (Max): 0.055" (1.40mm) Frequency: 155.52 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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MX553NBF155M520 | Microchip Technology |
Description: XTAL OSC XO 155.5200MHZ LVPECL Packaging: Tube Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 2.375V ~ 3.63V Current - Supply (Max): 120mA Height - Seated (Max): 0.055" (1.40mm) Frequency: 155.52 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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JANKCBL2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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JANSM2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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JANSD2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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MXLSMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXLSMCJ36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MASMCJ36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MXSMCJ36A | Microchip Technology | Description: TVS DIODE 36VWM 58.1VC DO214AB |
Produkt ist nicht verfügbar |
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MASMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
auf Bestellung 1940 Stücke: Lieferzeit 21-28 Tag (e) |
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
Produkt ist nicht verfügbar |
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JANS1N6621 | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTXV1N6623US | Microchip Technology | Description: DIODE GEN PURP 880V 1A D5A |
Produkt ist nicht verfügbar |
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JANTXV1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JAN1N6623/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTX1N6622US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
Produkt ist nicht verfügbar |
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JAN1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANS1N6621/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |
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JAN1N6620U | Microchip Technology | Description: DIODE GEN PURP 200V 1.2A A-MELF |
Produkt ist nicht verfügbar |
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JANTXV1N6628US | Microchip Technology | Description: DIODE GEN PURP 660V 1.75A D5B |
Produkt ist nicht verfügbar |
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JAN1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTXV1N6621US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTX1N6620US/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
Produkt ist nicht verfügbar |
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1N6620E3/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTX1N6627U/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTX1N6628US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTX1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTX1N6620/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
Produkt ist nicht verfügbar |
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JANTX1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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MSMLJ70A | Microchip Technology | Description: TVS DIODE 70VWM 113VC DO214AB |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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MSMLJ54A | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.4A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 98 Stücke: Lieferzeit 21-28 Tag (e) |
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MSMLJ64CAe3 | Microchip Technology | Description: TVS DIODE 64VWM 103VC DO214AB |
Produkt ist nicht verfügbar |
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MSMLJ43CA | Microchip Technology | Description: TVS DIODE 43VWM 69.4VC DO214AB |
Produkt ist nicht verfügbar |
1N6626US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N6626/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6626/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
1N6626UE3 |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JAN1N6626/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
1N6626/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
ATSAMD51P19A-AFT |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ATSAMD51P19A-AFT |
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 18.28 EUR |
25+ | 16.73 EUR |
100+ | 15.17 EUR |
MCP6564-E/STVAO |
Hersteller: Microchip Technology
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-TSSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-TSSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Produkt ist nicht verfügbar
MCP6567-E/MSVAO |
Hersteller: Microchip Technology
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Produkt ist nicht verfügbar
MCP6567T-E/MSVAO |
Hersteller: Microchip Technology
Description: DUAL 1.8V OPEN DRAIN COMPARATOR
Description: DUAL 1.8V OPEN DRAIN COMPARATOR
Produkt ist nicht verfügbar
MCP6564T-E/SLVAO |
Hersteller: Microchip Technology
Description: IC COMPARATOR 4 GEN PUR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Push-Pull, Rail-to-Rail, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-SOIC
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Description: IC COMPARATOR 4 GEN PUR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Push-Pull, Rail-to-Rail, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-SOIC
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Produkt ist nicht verfügbar
MCP6567AT-E/UN |
Produkt ist nicht verfügbar
MCP6567AT-E/MF |
Produkt ist nicht verfügbar
MCP6567A-E/MF |
Produkt ist nicht verfügbar
CDLL4473/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
Produkt ist nicht verfügbar
TC51N2202ECBTR |
Hersteller: Microchip Technology
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
auf Bestellung 3041 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.19 EUR |
25+ | 3.48 EUR |
100+ | 3.19 EUR |
1N914UR-1/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Produkt ist nicht verfügbar
MNS1N5822US |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
Description: DIODE SCHOTTKY 40V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
Produkt ist nicht verfügbar
JAN1N2844B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/114
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/114
Produkt ist nicht verfügbar
MX553NBF155M520-TR |
Hersteller: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
MX553NBF155M520 |
Hersteller: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
JANKCBL2N3440 |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JANSM2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JANSD2N3440L |
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
MXLSMCJ36A |
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MXLSMCJ36Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MASMCJ36Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MXSMCJ36A |
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Description: TVS DIODE 36VWM 58.1VC DO214AB
Produkt ist nicht verfügbar
MASMCJ36A |
Hersteller: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
LND150N3-G-P014 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 1940 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.64 EUR |
25+ | 1.32 EUR |
100+ | 1.25 EUR |
LND150N3-G-P014 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Produkt ist nicht verfügbar
JANS1N6621 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
JANTXV1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N6623US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
Description: DIODE GEN PURP 880V 1A D5A
Produkt ist nicht verfügbar
JANTXV1N6623US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JAN1N6623/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6622US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Produkt ist nicht verfügbar
JAN1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANS1N6621/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Produkt ist nicht verfügbar
JAN1N6620U |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1.2A A-MELF
Description: DIODE GEN PURP 200V 1.2A A-MELF
Produkt ist nicht verfügbar
JANTXV1N6628US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D5B
Description: DIODE GEN PURP 660V 1.75A D5B
Produkt ist nicht verfügbar
JAN1N6623US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N6621US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6620US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Produkt ist nicht verfügbar
1N6620E3/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6627U/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6628US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6627US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N6620/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Produkt ist nicht verfügbar
JANTX1N6623US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
MSMLJ70A |
Hersteller: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)MSMLJ54A |
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 98 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.02 EUR |
MSMLJ64CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
Produkt ist nicht verfügbar
MSMLJ43CA |
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Description: TVS DIODE 43VWM 69.4VC DO214AB
Produkt ist nicht verfügbar