Technische Details 2N5552 MOT
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 5mA, Supplier Device Package: TO-5AA, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 15 W.
Weitere Produktangebote 2N5552
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2N5552 | Hersteller : Microchip Technology |
 Trans GP BJT NPN 80V 10A 3-Pin TO-5 |
Produkt ist nicht verfügbar |
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2N5552 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 5mA Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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| 2N5552 | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |