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JAN1N4131CUR-1 JAN1N4131CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 75V DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
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JANTXV1N4131C-1 JANTXV1N4131C-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTX1N4131CUR-1 JANTX1N4131CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JAN1N4131DUR-1 JAN1N4131DUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 75V DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
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JANTXV1N4131CUR-1 JANTXV1N4131CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTX1N4131DUR-1 JANTX1N4131DUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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MXLSMCJ54CA MXLSMCJ54CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCJ54CAe3 MXLSMCJ54CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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VC-709-121-66M6670000 Microchip Technology VC-709.pdf Description: VC-709-121-66M6670000
Packaging: Tape & Reel (TR)
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VC-709-121-66M6670000_SNPB Microchip Technology VC-709.pdf Description: VC-709-121-66M6670000_SNPB
Packaging: Tape & Reel (TR)
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OS81216AF-B2B-010300-VAO OS81216AF-B2B-010300-VAO Microchip Technology Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
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OS81216AFR-B2B-010300-VAO OS81216AFR-B2B-010300-VAO Microchip Technology Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
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2N4116 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
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2N6182 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
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2N6189 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N6188 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N5284 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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2N6184 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N5285 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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2N6183 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
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2N5074 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
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2N5076 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
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2N5075 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
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2N6185 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N5287 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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2N6186 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
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2N5730 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 45 W
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2N5658 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N6187 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
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2N5004 Microchip Technology 8862-lds-0038-datasheet Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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2N4999 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
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2N4998 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
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JANTXV2N5002 Microchip Technology 8862-lds-0038-pdf Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JAN2N5002 Microchip Technology 8862-lds-0038-pdf Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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DSC1203CE2-167M7722 DSC1203CE2-167M7722 Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf Description: MEMS OSC XO 167.7722MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 167.7722 MHz
Base Resonator: MEMS
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JAN1N4968C JAN1N4968C Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 27V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
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JANTX1N4967C Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
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JAN1N4967D JAN1N4967D Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±1%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
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JAN1N4967CUS JAN1N4967CUS Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
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JAN1N4967DUS JAN1N4967DUS Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
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JANTX1N4967DUS JANTX1N4967DUS Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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ATMEGA324PA-MCH ATMEGA324PA-MCH Microchip Technology ATMEGA324PA%20Datasheet.PDF Description: IC MCU 8BIT 32KB FLASH 44QFN
Packaging: Tray
Package / Case: 44-VQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (5x5)
Number of I/O: 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ATQT600 ATQT600 Microchip Technology docqt600qsg.pdf Description: QT600 EVAL KIT ATTINY88 QTOUCH
Packaging: Box
Interface: USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: ATtiny88, ATmega324PA, ATxmega128A1
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
Produkt ist nicht verfügbar
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ATMEGA324PA-PN ATMEGA324PA-PN Microchip Technology ATmega164A_PA-324A_PA-644A_PA-1284_P_Data-Sheet-40002070B.pdf Description: IC MCU 8BIT 32KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ATMEGA324P-A15AZ ATMEGA324P-A15AZ Microchip Technology ATmega164%2C324%2C644P%20Summary.pdf Description: IC MCU 8BIT 32KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ATMEGA324P-A15MZ ATMEGA324P-A15MZ Microchip Technology ATmega164%2C324%2C644P%20Summary.pdf Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1N2492 1N2492 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N2494 1N2494 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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1N2493 1N2493 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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1N2491 1N2491 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1N2495 1N2495 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1N2496 1N2496 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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1N2497 1N2497 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1N249B Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249A Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249C Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N249 Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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CD5367B CD5367B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.8 EUR
100+8.18 EUR
Mindestbestellmenge: 2
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CD5367B CD5367B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
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1N5918UR-1/TR 1N5918UR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JAN1N4131CUR-1 5801-lds-0245-datasheet
JAN1N4131CUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTXV1N4131C-1 129734-lds-0245-2-datasheet
JANTXV1N4131C-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTX1N4131CUR-1 5801-lds-0245-datasheet
JANTX1N4131CUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JAN1N4131DUR-1 5801-lds-0245-datasheet
JAN1N4131DUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTXV1N4131CUR-1 5801-lds-0245-datasheet
JANTXV1N4131CUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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JANTX1N4131DUR-1 5801-lds-0245-datasheet
JANTX1N4131DUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 57 V
Produkt ist nicht verfügbar
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MXLSMCJ54CA 10561-msmc-datasheet
MXLSMCJ54CA
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLSMCJ54CAe3 10561-msmc-datasheet
MXLSMCJ54CAe3
Hersteller: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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VC-709-121-66M6670000 VC-709.pdf
Hersteller: Microchip Technology
Description: VC-709-121-66M6670000
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VC-709-121-66M6670000_SNPB VC-709.pdf
Hersteller: Microchip Technology
Description: VC-709-121-66M6670000_SNPB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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OS81216AF-B2B-010300-VAO
OS81216AF-B2B-010300-VAO
Hersteller: Microchip Technology
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
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OS81216AFR-B2B-010300-VAO
OS81216AFR-B2B-010300-VAO
Hersteller: Microchip Technology
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
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2N4116
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
Produkt ist nicht verfügbar
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2N6182
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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2N6189
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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2N6188
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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2N5284
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
Produkt ist nicht verfügbar
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2N6184
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N5285
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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2N6183
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
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2N5074
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
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2N5076
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
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2N5075
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
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2N6185
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
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2N5287
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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2N6186
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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2N5730
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 45 W
Produkt ist nicht verfügbar
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2N5658
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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2N6187
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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2N5004 8862-lds-0038-datasheet
Hersteller: Microchip Technology
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2N4999
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
Produkt ist nicht verfügbar
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2N4998
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
Produkt ist nicht verfügbar
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JANTXV2N5002 8862-lds-0038-pdf
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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JAN2N5002 8862-lds-0038-pdf
Hersteller: Microchip Technology
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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DSC1203CE2-167M7722 DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf
DSC1203CE2-167M7722
Hersteller: Microchip Technology
Description: MEMS OSC XO 167.7722MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 167.7722 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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JAN1N4968C 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
JAN1N4968C
Hersteller: Microchip Technology
Description: DIODE ZENER 27V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
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JANTX1N4967C 10913-sa5-37-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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JAN1N4967D 10913-sa5-37-datasheet
JAN1N4967D
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±1%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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JAN1N4967CUS 11059-sd44a-datasheet
JAN1N4967CUS
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
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JAN1N4967DUS 11059-sd44a-datasheet
JAN1N4967DUS
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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JANTX1N4967DUS 11059-sd44a-datasheet
JANTX1N4967DUS
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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ATMEGA324PA-MCH ATMEGA324PA%20Datasheet.PDF
ATMEGA324PA-MCH
Hersteller: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44QFN
Packaging: Tray
Package / Case: 44-VQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (5x5)
Number of I/O: 32
DigiKey Programmable: Not Verified
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ATQT600 docqt600qsg.pdf
ATQT600
Hersteller: Microchip Technology
Description: QT600 EVAL KIT ATTINY88 QTOUCH
Packaging: Box
Interface: USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: ATtiny88, ATmega324PA, ATxmega128A1
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
Produkt ist nicht verfügbar
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ATMEGA324PA-PN ATmega164A_PA-324A_PA-644A_PA-1284_P_Data-Sheet-40002070B.pdf
ATMEGA324PA-PN
Hersteller: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
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ATMEGA324P-A15AZ ATmega164%2C324%2C644P%20Summary.pdf
ATMEGA324P-A15AZ
Hersteller: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
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ATMEGA324P-A15MZ ATmega164%2C324%2C644P%20Summary.pdf
ATMEGA324P-A15MZ
Hersteller: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1N2492 S,R20.pdf
1N2492
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N2494 S,R20.pdf
1N2494
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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1N2493 S,R20.pdf
1N2493
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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1N2491 S,R20.pdf
1N2491
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1N2495 S,R20.pdf
1N2495
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1N2496 S,R20.pdf
1N2496
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
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1N2497 S,R20.pdf
1N2497
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1N249B S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N249A S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N249C S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N249 S,R304.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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CD5367B 8375-cd5333b-cd5379b-datasheet
CD5367B
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.8 EUR
100+8.18 EUR
Mindestbestellmenge: 2
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CD5367B 8375-cd5333b-cd5379b-datasheet
CD5367B
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1N5918UR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5918UR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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