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1N2137RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2131A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2135AR Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N3209 Microchip Technology 8541-coe-20-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N3209R Microchip Technology 8541-coe-20-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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PM50028B1-FEI Microchip Technology Switchtec-PFX-Gen-5-Sell-Sheet-00003776.pdf Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
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PM40028B1-F3EI PM40028B1-F3EI Microchip Technology 00002866D.pdf Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Supplier Device Package: 753-BBGA (29x29)
Applications: Fanout PCIe Switch
Interface: PCI
Mounting Type: Surface Mount
Package / Case: 753-BGA
Packaging: Tray
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M1.5KE170A Microchip Technology 9459-m1-5ke-datasheet Description: TVS DIODE 145VWM 234VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 162V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 145V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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TVS328e3 TVS328e3 Microchip Technology Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324e3 TVS324e3 Microchip Technology Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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tvs324e3/tr tvs324e3/tr Microchip Technology Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324/TR TVS324/TR Microchip Technology Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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APT20M16LFLLG APT20M16LFLLG Microchip Technology APT20M16%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
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APT20M20B2FLLG APT20M20B2FLLG Microchip Technology 6743-apt20m20b2fllg-apt20m20lfllg-datasheet Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT20M18B2VRG APT20M18B2VRG Microchip Technology 6741-apt20m18b2vrg-apt20m18lvrg-datasheet Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
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APT10M09LVFRG APT10M09LVFRG Microchip Technology apt10m09%28b2%2Cl%29vfr.pdf Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
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APT20M20LFLLG APT20M20LFLLG Microchip Technology 6743-apt20m20b2fllg-apt20m20lfllg-datasheet Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
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1N5810 Microchip Technology Description: DIODE GEN PURP 6A AXIAL
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Supplier Device Package: Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
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EV33A17A EV33A17A Microchip Technology e762da972dccf73b1c014138c174c6105ea4f226e4ad9402ac4fbd2e5d46ed16.pdf Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
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PIC32MZ1025DAH176T-I/2J PIC32MZ1025DAH176T-I/2J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ1025DAH176T-I/2J PIC32MZ1025DAH176T-I/2J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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JAN1N5806/TR JAN1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTX1N5806/TR JANTX1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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1N5806e3/TR 1N5806e3/TR Microchip Technology 11055-sd40a-datasheet Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5806 JANTXV1N5806 Microchip Technology Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5806/TR JANTXV1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANHCE1N5806 Microchip Technology Description: DIODE GEN PURP 150V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JAN1N5806URS JAN1N5806URS Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JAN1N5806URS/TR JAN1N5806URS/TR Microchip Technology 1N5802US%2C04US%2C06US%20%26%20URS.pdf Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTX1N5806URS JANTX1N5806URS Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTX1N5806URS/TR JANTX1N5806URS/TR Microchip Technology 1N5802US%2C04US%2C06US%20%26%20URS.pdf Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5806URS JANTXV1N5806URS Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 150V 1A A-MELF
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JANTXV1N5806URS/TR JANTXV1N5806URS/TR Microchip Technology 1N5802US%2C04US%2C06US%20%26%20URS.pdf Description: UFR,FRR
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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1N5806URS 1N5806URS Microchip Technology Description: DIODE GEN PURP 160V 1A A SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 160 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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1N5806URS/TR 1N5806URS/TR Microchip Technology 1N5802US%2C04US%2C06US%20%26%20URS.pdf Description: UFR,FRR
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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1N5806URS/TR 1N5806URS/TR Microchip Technology 1N5802US%2C04US%2C06US%20%26%20URS.pdf Description: UFR,FRR
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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JANS1N5806/TR JANS1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANS1N5806URS JANS1N5806URS Microchip Technology Description: DIODE GEN PURP 150V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
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JANS1N5806URS/TR JANS1N5806URS/TR Microchip Technology Description: DIODE GP 160V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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1N6101 Microchip Technology 122688-lds-0083-datasheet Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
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JANTX1N6101 Microchip Technology 122688-lds-0083-datasheet Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
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JANTXV1N6101 Microchip Technology 122688-lds-0083-datasheet Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
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JAN1N6101 Microchip Technology 122688-lds-0083-datasheet Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
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MCP4018T-103E/LTY MCP4018T-103E/LTY Microchip Technology MCP4017-18-19-Data-Sheet-DS20002147.pdf Description: IC DGTL POT 10KOHM 128TAP SC70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
Produkt ist nicht verfügbar
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MCP4018T-503E/LTY MCP4018T-503E/LTY Microchip Technology MCP4017-18-19-Data-Sheet-DS20002147.pdf Description: IC DIG POT 50K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
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MCP4018T-104E/LTY MCP4018T-104E/LTY Microchip Technology MCP4017-18-19-Data-Sheet-DS20002147.pdf Description: IC DIG POT 100K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
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MCP4018T-502E/LTY MCP4018T-502E/LTY Microchip Technology MCP4017-18-19-Data-Sheet-DS20002147.pdf Description: IC DIG POT 5K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 5k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
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DSC1123AE1-125.0000T DSC1123AE1-125.0000T Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: MEMS OSC XO 125.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
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7+3.28 EUR
10+3.21 EUR
50+3.17 EUR
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CD4569 CD4569 Microchip Technology 8365-cd4565-cd4584a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: Die
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: 0°C ~ 75°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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CD4569A CD4569A Microchip Technology 8365-cd4565-cd4584a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: Die
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5712 1N5712 Microchip Technology LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf Description: DIODE SCHOTTKY 20V 75MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
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2+10.6 EUR
100+9.85 EUR
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1N5916A 1N5916A Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±10%
Packaging: Bulk
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1N5916BUR-1/TR 1N5916BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5916BUR-1/TR 1N5916BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1N5916C 1N5916C Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916D 1N5916D Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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KVX1965A-23-0 KVX1965A-23-0 Microchip Technology 137658-kvx1900-kvx1400-kvx1500-series-datasheet Description: SI TVAR NON HERMETIC PLASTIC SMT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.6pF @ 1V, 1MHz
Q @ Vr, F: 1500 @ 4V, 50MHz
Capacitance Ratio Condition: C1/C6
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 3.3
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KVX1965A-23-0 KVX1965A-23-0 Microchip Technology 137658-kvx1900-kvx1400-kvx1500-series-datasheet Description: SI TVAR NON HERMETIC PLASTIC SMT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.6pF @ 1V, 1MHz
Q @ Vr, F: 1500 @ 4V, 50MHz
Capacitance Ratio Condition: C1/C6
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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48L640T-I/MNY 48L640T-I/MNY Microchip Technology 20006055B.pdf Description: IC EERAM 64KBIT SPI 66MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 66 MHz
Memory Format: EERAM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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MSCC60VRM99CT3AG MSCC60VRM99CT3AG Microchip Technology 00003052C.pdf Description: MOSFET 600V 19A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Supplier Device Package: SP3F
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1N2137RA S%2CR35.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2131A S%2CR35.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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1N2135AR S%2CR35.pdf
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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1N3209 8541-coe-20-datasheet
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N3209R 8541-coe-20-datasheet
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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PM50028B1-FEI Switchtec-PFX-Gen-5-Sell-Sheet-00003776.pdf
Hersteller: Microchip Technology
Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
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25+590.98 EUR
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PM40028B1-F3EI 00002866D.pdf
PM40028B1-F3EI
Hersteller: Microchip Technology
Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Supplier Device Package: 753-BBGA (29x29)
Applications: Fanout PCIe Switch
Interface: PCI
Mounting Type: Surface Mount
Package / Case: 753-BGA
Packaging: Tray
Produkt ist nicht verfügbar
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M1.5KE170A 9459-m1-5ke-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 234VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 162V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 145V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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TVS328e3
TVS328e3
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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TVS324e3
TVS324e3
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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tvs324e3/tr
tvs324e3/tr
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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TVS324/TR
TVS324/TR
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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APT20M16LFLLG APT20M16%28B2%2CL%29FLL.pdf
APT20M16LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
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APT20M20B2FLLG 6743-apt20m20b2fllg-apt20m20lfllg-datasheet
APT20M20B2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT20M18B2VRG 6741-apt20m18b2vrg-apt20m18lvrg-datasheet
APT20M18B2VRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Produkt ist nicht verfügbar
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APT10M09LVFRG apt10m09%28b2%2Cl%29vfr.pdf
APT10M09LVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
Produkt ist nicht verfügbar
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APT20M20LFLLG 6743-apt20m20b2fllg-apt20m20lfllg-datasheet
APT20M20LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Produkt ist nicht verfügbar
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1N5810
Hersteller: Microchip Technology
Description: DIODE GEN PURP 6A AXIAL
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Supplier Device Package: Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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EV33A17A e762da972dccf73b1c014138c174c6105ea4f226e4ad9402ac4fbd2e5d46ed16.pdf
EV33A17A
Hersteller: Microchip Technology
Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
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PIC32MZ1025DAH176T-I/2J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ1025DAH176T-I/2J
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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700+32.34 EUR
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PIC32MZ1025DAH176T-I/2J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ1025DAH176T-I/2J
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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1+38.94 EUR
25+35.7 EUR
100+32.34 EUR
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JAN1N5806/TR 132686-lds-0211-datasheet
JAN1N5806/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTX1N5806/TR 132686-lds-0211-datasheet
JANTX1N5806/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N5806e3/TR 11055-sd40a-datasheet
1N5806e3/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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JANTXV1N5806
JANTXV1N5806
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTXV1N5806/TR 132686-lds-0211-datasheet
JANTXV1N5806/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANHCE1N5806
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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JAN1N5806URS 132687-lds-0211-1-datasheet
JAN1N5806URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JAN1N5806URS/TR 1N5802US%2C04US%2C06US%20%26%20URS.pdf
JAN1N5806URS/TR
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTX1N5806URS 132687-lds-0211-1-datasheet
JANTX1N5806URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTX1N5806URS/TR 1N5802US%2C04US%2C06US%20%26%20URS.pdf
JANTX1N5806URS/TR
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTXV1N5806URS 132687-lds-0211-1-datasheet
JANTXV1N5806URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A-MELF
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5806URS/TR 1N5802US%2C04US%2C06US%20%26%20URS.pdf
JANTXV1N5806URS/TR
Hersteller: Microchip Technology
Description: UFR,FRR
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5806URS
1N5806URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 160V 1A A SQ-MELF
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 160 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5806URS/TR 1N5802US%2C04US%2C06US%20%26%20URS.pdf
1N5806URS/TR
Hersteller: Microchip Technology
Description: UFR,FRR
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5806URS/TR 1N5802US%2C04US%2C06US%20%26%20URS.pdf
1N5806URS/TR
Hersteller: Microchip Technology
Description: UFR,FRR
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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JANS1N5806/TR 132686-lds-0211-datasheet
JANS1N5806/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANS1N5806URS
JANS1N5806URS
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANS1N5806URS/TR
JANS1N5806URS/TR
Hersteller: Microchip Technology
Description: DIODE GP 160V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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1N6101 122688-lds-0083-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Produkt ist nicht verfügbar
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JANTX1N6101 122688-lds-0083-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
Produkt ist nicht verfügbar
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JANTXV1N6101 122688-lds-0083-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
Produkt ist nicht verfügbar
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JAN1N6101 122688-lds-0083-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 16CDIP
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 16-CDIP
Unidirectional Channels: 8
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/474
Produkt ist nicht verfügbar
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MCP4018T-103E/LTY MCP4017-18-19-Data-Sheet-DS20002147.pdf
MCP4018T-103E/LTY
Hersteller: Microchip Technology
Description: IC DGTL POT 10KOHM 128TAP SC70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
Produkt ist nicht verfügbar
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MCP4018T-503E/LTY MCP4017-18-19-Data-Sheet-DS20002147.pdf
MCP4018T-503E/LTY
Hersteller: Microchip Technology
Description: IC DIG POT 50K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
Produkt ist nicht verfügbar
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MCP4018T-104E/LTY MCP4017-18-19-Data-Sheet-DS20002147.pdf
MCP4018T-104E/LTY
Hersteller: Microchip Technology
Description: IC DIG POT 100K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
Produkt ist nicht verfügbar
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MCP4018T-502E/LTY MCP4017-18-19-Data-Sheet-DS20002147.pdf
MCP4018T-502E/LTY
Hersteller: Microchip Technology
Description: IC DIG POT 5K SC-70-6
Packaging: Tape & Reel (TR)
Resistance (Ohms): 5k
Tolerance: ±20%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 155
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.95 EUR
Mindestbestellmenge: 3000 Stücke
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DSC1123AE1-125.0000T DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1123AE1-125.0000T
Hersteller: Microchip Technology
Description: MEMS OSC XO 125.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
auf Bestellung 913 Stücke:
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AnzahlPrivatkunde
7+3.28 EUR
10+3.21 EUR
50+3.17 EUR
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CD4569 8365-cd4565-cd4584a-datasheet
CD4569
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: Die
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: 0°C ~ 75°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CD4569A 8365-cd4565-cd4584a-datasheet
CD4569A
Hersteller: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: Die
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 6.4 V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5712 LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf
1N5712
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 75MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.6 EUR
100+9.85 EUR
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1N5916A 10922-sa5-57-datasheet
1N5916A
Hersteller: Microchip Technology
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5916BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5916BUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5916BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5916BUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-213AB (MELF, LL41)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N5916C 10922-sa5-57-datasheet
1N5916C
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916D 10922-sa5-57-datasheet
1N5916D
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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KVX1965A-23-0 137658-kvx1900-kvx1400-kvx1500-series-datasheet
KVX1965A-23-0
Hersteller: Microchip Technology
Description: SI TVAR NON HERMETIC PLASTIC SMT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.6pF @ 1V, 1MHz
Q @ Vr, F: 1500 @ 4V, 50MHz
Capacitance Ratio Condition: C1/C6
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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KVX1965A-23-0 137658-kvx1900-kvx1400-kvx1500-series-datasheet
KVX1965A-23-0
Hersteller: Microchip Technology
Description: SI TVAR NON HERMETIC PLASTIC SMT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.6pF @ 1V, 1MHz
Q @ Vr, F: 1500 @ 4V, 50MHz
Capacitance Ratio Condition: C1/C6
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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48L640T-I/MNY 20006055B.pdf
48L640T-I/MNY
Hersteller: Microchip Technology
Description: IC EERAM 64KBIT SPI 66MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 66 MHz
Memory Format: EERAM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MSCC60VRM99CT3AG 00003052C.pdf
MSCC60VRM99CT3AG
Hersteller: Microchip Technology
Description: MOSFET 600V 19A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Supplier Device Package: SP3F
Produkt ist nicht verfügbar
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