Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (361573) > Seite 3584 nach 6027
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||
|---|---|---|---|---|---|---|---|
| MSCM20XM10T3XG | MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Case: SP3X Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor On-state resistance: 10mΩ Drain current: 84A Drain-source voltage: 200V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCM20XM16F4G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw Case: SP4 Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor On-state resistance: 16mΩ Drain current: 77A Drain-source voltage: 200V Electrical mounting: FASTON connectors; screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCMC90AM12C3AG | MICROCHIP TECHNOLOGY | MSCMC90AM12C3AG Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM027CD3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Electrical mounting: FASTON connectors; screw On-state resistance: 3.5mΩ Topology: MOSFET half-bridge + parrallel diodes Drain current: 584A Pulsed drain current: 1400A Power dissipation: 2.97kW Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM027CT6AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 3.5mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 584A Pulsed drain current: 1400A Power dissipation: 2.97kW Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM042CD3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Case: D3 Electrical mounting: FASTON connectors; screw On-state resistance: 5.2mΩ Topology: MOSFET half-bridge + parrallel diodes Drain current: 395A Pulsed drain current: 990A Power dissipation: 2031W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM042CT6AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 5.2mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 395A Pulsed drain current: 990A Power dissipation: 2031W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM08CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 7.8mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 268A Pulsed drain current: 675A Power dissipation: 1409W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM11CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 202A Pulsed drain current: 500A Power dissipation: 1067W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM16CT1AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Case: SP1F Electrical mounting: Press-in PCB On-state resistance: 16mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 138A Pulsed drain current: 350A Power dissipation: 745W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM31CT1AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Electrical mounting: Press-in PCB On-state resistance: 31mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 71A Pulsed drain current: 180A Power dissipation: 395W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120AM50CT1AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Electrical mounting: Press-in PCB On-state resistance: 50mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 44A Pulsed drain current: 110A Power dissipation: 245W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120DAM11CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Topology: boost chopper; NTC thermistor Drain current: 202A Pulsed drain current: 500A Power dissipation: 1067W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120HM16CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 16mΩ Topology: H bridge + parrallel diodes; NTC thermistor Drain current: 138A Pulsed drain current: 350A Power dissipation: 745W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120HM31CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 31mΩ Topology: H bridge + parrallel diodes; NTC thermistor Drain current: 71A Pulsed drain current: 180A Power dissipation: 395W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120HM50CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 50mΩ Topology: H bridge + parrallel diodes; NTC thermistor Drain current: 44A Pulsed drain current: 110A Power dissipation: 245W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120SKM11CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Topology: buck chopper; NTC thermistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Case: SP3F On-state resistance: 10.4mΩ Drain current: 202A Pulsed drain current: 500A Power dissipation: 1067W Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120TAM11CTPAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Drain current: 200A Pulsed drain current: 500A Power dissipation: 1042W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120TAM16CTPAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 16mΩ Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Drain current: 136A Pulsed drain current: 350A Power dissipation: 728W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM120TAM31CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 31mΩ Topology: MOSFET three-phase bridge; NTC thermistor Drain current: 71A Pulsed drain current: 180A Power dissipation: 395W Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70AM025CD3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Case: D3 Electrical mounting: FASTON connectors; screw On-state resistance: 2.5mΩ Topology: MOSFET half-bridge Drain current: 538A Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70AM025CT6AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 2.5mΩ Topology: MOSFET half-bridge Drain current: 538A Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70AM07CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 6.4mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 281A Pulsed drain current: 700A Power dissipation: 988W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70AM10CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 9.5mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 192A Pulsed drain current: 482A Power dissipation: 690W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70AM19CT1AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Electrical mounting: Press-in PCB On-state resistance: 19mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70HM19CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 19mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70TAM05TPAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 6.4mΩ Topology: MOSFET x3 half-bridge; NTC thermistor Drain current: 278A Pulsed drain current: 700A Power dissipation: 966W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70TAM10CTPAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 9.5mΩ Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Drain current: 189A Pulsed drain current: 476A Power dissipation: 674W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70TAM19CT3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 19mΩ Topology: MOSFET three-phase bridge; NTC thermistor Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70VM10C4AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Case: SP4 Electrical mounting: FASTON connectors; screw On-state resistance: 9.5mΩ Topology: Vienna Rectifier Drain current: 189A Pulsed drain current: 476A Power dissipation: 674W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/tiristor/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSCSM70VM19C3AG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 19mΩ Topology: Vienna Rectifier Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/tiristor/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMBG51CA | MICROCHIP TECHNOLOGY |
MSMBG51CA Bidirectional TVS SMD diodes |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||
 |
MSMBJ12CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
|
|
MSMBJ15A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| MSMBJ45CA | MICROCHIP TECHNOLOGY |
MSMBJ45CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
|
|
MSMBJ48A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA Tolerance: ±5% Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
|
||
|
|
MSMBJ51A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA Tolerance: ±5% Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
|
|
MSMBJ6.0CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 0.8mA Tolerance: ±5% Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| MSMBJ8.5CA | MICROCHIP TECHNOLOGY |
MSMBJ8.5CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMBJ9.0A | MICROCHIP TECHNOLOGY |
MSMBJ9.0A Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMCGLCE18A | MICROCHIP TECHNOLOGY |
MSMCGLCE18A Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMCJ17CA | MICROCHIP TECHNOLOGY |
MSMCJ17CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
MSMCJ45CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| MSMCJ8.0CA | MICROCHIP TECHNOLOGY |
MSMCJ8.0CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ100CA | MICROCHIP TECHNOLOGY |
MSMLJ100CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
|
|
MSMLJ12CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| MSMLJ15AE3TR | MICROCHIP TECHNOLOGY | MSMLJ15AE3TR Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ170CA | MICROCHIP TECHNOLOGY |
MSMLJ170CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ24CA | MICROCHIP TECHNOLOGY |
MSMLJ24CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ28CA | MICROCHIP TECHNOLOGY |
MSMLJ28CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ40A | MICROCHIP TECHNOLOGY |
MSMLJ40A Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ40CAE3 | MICROCHIP TECHNOLOGY |
MSMLJ40CAE3 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ45Ae3 | MICROCHIP TECHNOLOGY |
MSMLJ45AE3 Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ51Ae3 | MICROCHIP TECHNOLOGY |
MSMLJ51AE3 Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ51CAe3 | MICROCHIP TECHNOLOGY |
MSMLJ51CAE3 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ54CAE3 | MICROCHIP TECHNOLOGY |
MSMLJ54CAE3 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ58CAE3 | MICROCHIP TECHNOLOGY |
MSMLJ58CAE3 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ6.0CA | MICROCHIP TECHNOLOGY |
MSMLJ6.0CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ78CA | MICROCHIP TECHNOLOGY |
MSMLJ78CA Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| MSMLJ85A | MICROCHIP TECHNOLOGY |
MSMLJ85A Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MSCM20XM10T3XG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Case: SP3X
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
On-state resistance: 10mΩ
Drain current: 84A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Case: SP3X
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
On-state resistance: 10mΩ
Drain current: 84A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCM20XM16F4G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Case: SP4
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
On-state resistance: 16mΩ
Drain current: 77A
Drain-source voltage: 200V
Electrical mounting: FASTON connectors; screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Case: SP4
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
On-state resistance: 16mΩ
Drain current: 77A
Drain-source voltage: 200V
Electrical mounting: FASTON connectors; screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCMC90AM12C3AG |
Hersteller: MICROCHIP TECHNOLOGY
MSCMC90AM12C3AG Transistor modules MOSFET
MSCMC90AM12C3AG Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM027CD3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 3.5mΩ
Topology: MOSFET half-bridge + parrallel diodes
Drain current: 584A
Pulsed drain current: 1400A
Power dissipation: 2.97kW
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 3.5mΩ
Topology: MOSFET half-bridge + parrallel diodes
Drain current: 584A
Pulsed drain current: 1400A
Power dissipation: 2.97kW
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM027CT6AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 3.5mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 584A
Pulsed drain current: 1400A
Power dissipation: 2.97kW
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 3.5mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 584A
Pulsed drain current: 1400A
Power dissipation: 2.97kW
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM042CD3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 5.2mΩ
Topology: MOSFET half-bridge + parrallel diodes
Drain current: 395A
Pulsed drain current: 990A
Power dissipation: 2031W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 5.2mΩ
Topology: MOSFET half-bridge + parrallel diodes
Drain current: 395A
Pulsed drain current: 990A
Power dissipation: 2031W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM042CT6AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 5.2mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 395A
Pulsed drain current: 990A
Power dissipation: 2031W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 5.2mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 395A
Pulsed drain current: 990A
Power dissipation: 2031W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM08CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 7.8mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 268A
Pulsed drain current: 675A
Power dissipation: 1409W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 7.8mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 268A
Pulsed drain current: 675A
Power dissipation: 1409W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM11CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM16CT1AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 138A
Pulsed drain current: 350A
Power dissipation: 745W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 138A
Pulsed drain current: 350A
Power dissipation: 745W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM31CT1AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120AM50CT1AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 50mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 245W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 50mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 245W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120DAM11CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: boost chopper; NTC thermistor
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: boost chopper; NTC thermistor
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120HM16CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 138A
Pulsed drain current: 350A
Power dissipation: 745W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 138A
Pulsed drain current: 350A
Power dissipation: 745W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120HM31CT3AG |
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120HM50CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 50mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 245W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 50mΩ
Topology: H bridge + parrallel diodes; NTC thermistor
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 245W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120SKM11CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Topology: buck chopper; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
On-state resistance: 10.4mΩ
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Topology: buck chopper; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
On-state resistance: 10.4mΩ
Drain current: 202A
Pulsed drain current: 500A
Power dissipation: 1067W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120TAM11CTPAG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 1042W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 1042W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120TAM16CTPAG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 136A
Pulsed drain current: 350A
Power dissipation: 728W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 136A
Pulsed drain current: 350A
Power dissipation: 728W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM120TAM31CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: MOSFET three-phase bridge; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Topology: MOSFET three-phase bridge; NTC thermistor
Drain current: 71A
Pulsed drain current: 180A
Power dissipation: 395W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70AM025CD3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Topology: MOSFET half-bridge
Drain current: 538A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Topology: MOSFET half-bridge
Drain current: 538A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70AM025CT6AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Topology: MOSFET half-bridge
Drain current: 538A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Topology: MOSFET half-bridge
Drain current: 538A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70AM07CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 6.4mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 281A
Pulsed drain current: 700A
Power dissipation: 988W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 6.4mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 281A
Pulsed drain current: 700A
Power dissipation: 988W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70AM10CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 9.5mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 192A
Pulsed drain current: 482A
Power dissipation: 690W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 9.5mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 192A
Pulsed drain current: 482A
Power dissipation: 690W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70AM19CT1AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70HM19CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70TAM05TPAG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 6.4mΩ
Topology: MOSFET x3 half-bridge; NTC thermistor
Drain current: 278A
Pulsed drain current: 700A
Power dissipation: 966W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 6.4mΩ
Topology: MOSFET x3 half-bridge; NTC thermistor
Drain current: 278A
Pulsed drain current: 700A
Power dissipation: 966W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70TAM10CTPAG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 9.5mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 189A
Pulsed drain current: 476A
Power dissipation: 674W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 9.5mΩ
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Drain current: 189A
Pulsed drain current: 476A
Power dissipation: 674W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70TAM19CT3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET three-phase bridge; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET three-phase bridge; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70VM10C4AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Electrical mounting: FASTON connectors; screw
On-state resistance: 9.5mΩ
Topology: Vienna Rectifier
Drain current: 189A
Pulsed drain current: 476A
Power dissipation: 674W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/tiristor/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Electrical mounting: FASTON connectors; screw
On-state resistance: 9.5mΩ
Topology: Vienna Rectifier
Drain current: 189A
Pulsed drain current: 476A
Power dissipation: 674W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/tiristor/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSCSM70VM19C3AG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: Vienna Rectifier
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/tiristor/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: Vienna Rectifier
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/tiristor/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBG51CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMBG51CA Bidirectional TVS SMD diodes
MSMBG51CA Bidirectional TVS SMD diodes
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.23 EUR |
| MSMBJ12CA |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ15A |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ45CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMBJ45CA Bidirectional TVS SMD diodes
MSMBJ45CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ48A |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| MSMBJ51A |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ6.0CAE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ8.5CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMBJ8.5CA Bidirectional TVS SMD diodes
MSMBJ8.5CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ9.0A |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMBJ9.0A Unidirectional TVS SMD diodes
MSMBJ9.0A Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCGLCE18A |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMCGLCE18A Unidirectional TVS SMD diodes
MSMCGLCE18A Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJ17CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMCJ17CA Bidirectional TVS SMD diodes
MSMCJ17CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJ45CA |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMCJ8.0CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMCJ8.0CA Bidirectional TVS SMD diodes
MSMCJ8.0CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ100CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ100CA Bidirectional TVS SMD diodes
MSMLJ100CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ12CAe3 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ15AE3TR |
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ15AE3TR Unidirectional TVS SMD diodes
MSMLJ15AE3TR Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ170CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ170CA Bidirectional TVS SMD diodes
MSMLJ170CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ24CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ24CA Bidirectional TVS SMD diodes
MSMLJ24CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ28CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ28CA Bidirectional TVS SMD diodes
MSMLJ28CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ40A |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ40A Unidirectional TVS SMD diodes
MSMLJ40A Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ40CAE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ40CAE3 Bidirectional TVS SMD diodes
MSMLJ40CAE3 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ45Ae3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ45AE3 Unidirectional TVS SMD diodes
MSMLJ45AE3 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ51Ae3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ51AE3 Unidirectional TVS SMD diodes
MSMLJ51AE3 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ51CAe3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ51CAE3 Bidirectional TVS SMD diodes
MSMLJ51CAE3 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ54CAE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ54CAE3 Bidirectional TVS SMD diodes
MSMLJ54CAE3 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ58CAE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ58CAE3 Bidirectional TVS SMD diodes
MSMLJ58CAE3 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ6.0CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ6.0CA Bidirectional TVS SMD diodes
MSMLJ6.0CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ78CA |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ78CA Bidirectional TVS SMD diodes
MSMLJ78CA Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMLJ85A |
|
Hersteller: MICROCHIP TECHNOLOGY
MSMLJ85A Unidirectional TVS SMD diodes
MSMLJ85A Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH