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LAN8710A-EZC LAN8710A-EZC Microchip Technology 00002164B.pdf Description: IC TRANSCEIVER FULL 4/4 32QFNEP
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN-EP (5x5)
Duplex: Full
Part Status: Active
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LAN8720A-CP LAN8720A-CP Microchip Technology LAN8720A-LAN8720Ai-Data-Sheet-DS00002165.pdf Description: IC TRANSCEIVER FULL 2/2 24QFNEP
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN-EP (4x4)
Duplex: Full
Part Status: Active
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USB2517-JZX USB2517-JZX Microchip Technology USB2517-USB2517i-Data-Sheet-00001598C.pdf Description: IC USB 2.0 7PORT HUB CTLR 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 130mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
DigiKey Programmable: Not Verified
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APT102GA60L APT102GA60L Microchip Technology index.php?option=com_docman&task=doc_download&gid=123656 Description: IGBT 600V 183A 780W TO264
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APT150GT120JR APT150GT120JR Microchip Technology index.php?option=com_docman&task=doc_download&gid=6636 Description: IGBT MOD 1200V 170A 830W ISOTOP
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APT200GN60B2G APT200GN60B2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT TRENCH FIELD STOP 600V 283A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 13mJ (on), 11mJ (off)
Test Condition: 400V, 200A, 1Ohm, 15V
Gate Charge: 1180 nC
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 682 W
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APT200GN60J APT200GN60J Microchip Technology 5922-apt200gn60j-datasheet Description: IGBT MOD 600V 283A 682W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 682 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 14.1 nF @ 25 V
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APT200GN60JDQ4 APT200GN60JDQ4 Microchip Technology 5922-apt200gn60j-datasheet Description: IGBT MOD 600V 283A 682W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 682 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 14.1 nF @ 25 V
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APT27GA90BD15 APT27GA90BD15 Microchip Technology index.php?option=com_docman&task=doc_download&gid=123668 Description: IGBT 900V 48A 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/98ns
Switching Energy: 413µJ (on), 287µJ (off)
Test Condition: 600V, 14A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 79 A
Power - Max: 223 W
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APT2X151DL60J APT2X151DL60J Microchip Technology index.php?option=com_docman&task=doc_download&gid=6840 Description: DIODE MODULE 600V 150A ISOTOP
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APT30D30BCTG APT30D30BCTG Microchip Technology 6863-apt30d30bctg-datasheet Description: DIODE ARRAY GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT35GA90BD15 APT35GA90BD15 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 900V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/104ns
Switching Energy: 642µJ (on), 382µJ (off)
Test Condition: 600V, 18A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 290 W
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APT38F80B2 APT38F80B2 Microchip Technology 6988-apt38f80b2-apt38f80l-datasheet Description: MOSFET N-CH 800V 41A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT43GA90BD30 APT43GA90BD30 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 900V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
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APT50GS60BRDQ2G APT50GS60BRDQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 93A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/225ns
Switching Energy: 755µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 415 W
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APT50GS60BRG APT50GS60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 93A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/225ns
Switching Energy: 755µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 415 W
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APT50GT120B2RDQ2G APT50GT120B2RDQ2G Microchip Technology Description: IGBT NPT 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/230ns
Switching Energy: 2330µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 625 W
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APT50GT120B2RG APT50GT120B2RG Microchip Technology 7103-apt50gt120b2rg-apt50gt120lrg-datasheet Description: IGBT NPT 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/230ns
Switching Energy: 2330µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 625 W
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APT50GT120LRDQ2G APT50GT120LRDQ2G Microchip Technology 7112-apt50gt120lrdq2g-datasheet Description: IGBT NPT 1200V 106A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 2585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
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APT51F50J APT51F50J Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT54GA60BD30 APT54GA60BD30 Microchip Technology index.php?option=com_docman&task=doc_download&gid=123655 Description: IGBT 600V 96A 416W TO247
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APT75GN120JDQ3 APT75GN120JDQ3 Microchip Technology 7246-apt75gn120jdq3-datasheet Description: IGBT MOD 1200V 124A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 124 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.8 nF @ 25 V
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APT75GN60LDQ3G APT75GN60LDQ3G Microchip Technology 6471-apt75gn60ldq3g-datasheet Description: IGBT TRENCH FS 600V 155A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Part Status: Active
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
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APT80GA60B APT80GA60B Microchip Technology index.php?option=com_docman&task=doc_download&gid=123650 Description: IGBT 600V 143A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/158ns
Switching Energy: 840µJ (on), 751µJ (off)
Test Condition: 400V, 47A, 4.7Ohm, 15V
Gate Charge: 230 nC
Current - Collector (Ic) (Max): 143 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 625 W
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APT80GA90B APT80GA90B Microchip Technology 123651-apt80ga90b-apt80ga90s-datasheet Description: IGBT PT 900V 145A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1652µJ (on), 1389µJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
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MA240017 MA240017 Microchip Technology 39927c.pdf Description: MODULE PLUG-IN PIC24F16KA102 PIM
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MA180023 MA180023 Microchip Technology 39932D.pdf Description: MODULE PLUG-IN PIC18F46J11 PIM
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VRF141 VRF141 Microchip Technology 77328-vrf141-vrf141mp-datasheet Description: RF MOSFET 28V M174
Packaging: Box
Package / Case: M174
Current Rating (Amps): 20A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 250 mA
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VRF148A VRF148A Microchip Technology 77329-vrf148a-vrf148amp-datasheet Description: RF MOSFET N-CHANNEL 50V M113
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VRF150 VRF150 Microchip Technology 77330-vrf150-vrf150mp-datasheet Description: RF MOSFET N-CHANNEL 50V M174
Packaging: Box
Package / Case: M174
Current Rating (Amps): 1mA
Frequency: 150MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 11dB
Technology: MOSFET
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF151 VRF151 Microchip Technology 77331-vrf151-vrf151mp-datasheet Description: RF MOSFET 50V M174
Packaging: Tray
Package / Case: M174
Current Rating (Amps): 1mA
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 14dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF151G VRF151G Microchip Technology 11465-vrf151g-datasheet Description: RF MOSFET 50V M208
Packaging: Box
Package / Case: 4-SMD
Current Rating (Amps): 1mA
Frequency: 175MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 300W
Gain: 16dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M208
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 500 mA
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VRF152 VRF152 Microchip Technology 77333-vrf152-vrf152mp-datasheet Description: MOSFET RF PWR N-CH 50V 150W M174
Packaging: Tube
Package / Case: M174
Current Rating (Amps): 50µA
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 14dB
Technology: MOSFET
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF154FL VRF154FL Microchip Technology 5654-datasheets Description: RF MOSFET 50V T2
Packaging: Tube
Package / Case: T2
Current Rating (Amps): 4mA
Frequency: 80MHz
Configuration: N-Channel
Power - Output: 600W
Gain: 17dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: T2
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 800 mA
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VRF157FL VRF157FL Microchip Technology 5654-datasheets Description: MOSFET RF PWR N-CH 50V 600W T2
Packaging: Tube
Package / Case: T2
Current Rating (Amps): 4mA
Frequency: 80MHz
Configuration: N-Channel
Power - Output: 600W
Gain: 21dB
Technology: MOSFET
Supplier Device Package: T2
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 800 mA
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VRF2933 VRF2933 Microchip Technology 00004434A_VRF2933_RF_MOSFET_Datasheet.PDF Description: RF MOSFET 50V M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 2mA
Frequency: 150MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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APTCV60TLM99T3G APTCV60TLM99T3G Microchip Technology 7403-aptcv60tlm99t3g-datasheet Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter - IGBT, FET
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APTGL60TL120T3G APTGL60TL120T3G Microchip Technology 7643-aptgl60tl120t3g-datasheet Description: IGBT MODULE 1200V 80A 280W SP3
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APTGT200TL60G APTGT200TL60G Microchip Technology 7781-aptgt200tl60g-datasheet Description: IGBT MODULE 600V 300A 652W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
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APTGT50TL601G APTGT50TL601G Microchip Technology 7916-aptgt50tl601g-datasheet Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT75TL60T3G APTGT75TL60T3G Microchip Technology 7968-aptgt75tl60t3g-datasheet Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Tube
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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AC103003 AC103003 Microchip Technology PIC10F%20Capacitive%20Touch%20Board_ds41359a.pdf description Description: BOARD DEMO PIC10F CAP TOUCH
Packaging: Box
Sensor Type: Touch, Capacitive
Utilized IC / Part: PIC10F204, PIC10F206
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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AC164127-3 AC164127-3 Microchip Technology Description: BOARD DAUGHTER GRAPHIC PICTAIL
Packaging: Box
Function: LCD Touch Screen
Type: Display
Utilized IC / Part: AC164127-4 + AC164127-5 Bundle
Supplied Contents: Board(s)
Primary Attributes: 3.2" 320x240 QVGA
Embedded: Yes, MCU, 16/32-Bit
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AC164127-4 AC164127-4 Microchip Technology 51911A.pdf Description: BOARD GRAPH DISPLAY 3.2 240X320
Packaging: Bulk
Function: LCD Touch Screen
Type: Display
Supplied Contents: Board(s)
Primary Attributes: 3.2" 320x240 QVGA
Embedded: Yes, MCU, 16/32-Bit
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AC164127-5 AC164127-5 Microchip Technology 50001844b.pdf Description: BOARD GRAPH LCD CNTLR PICTAIL
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AC164135 AC164135 Microchip Technology 70574A.pdf Description: BOARD DAUGHTER THERMAL/LINEAR
Packaging: Box
Contents: Board(s)
Sensor Type: Temperature, Thermocouple
Utilized IC / Part: TC1047A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
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AC164136 AC164136 Microchip Technology description Description: KIT DEVELOPMENT ZERO G 802.11
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AC243003 AC243003 Microchip Technology Description: SERIAL EEPROM PIM PICTAIL 4PACK
Packaging: Box
Function: EEPROM
Type: Memory
Contents: Board(s)
Utilized IC / Part: 11AA160, 24AA512, 25AA512, 93AA86B
Platform: PICtail™ Plus
Part Status: Active
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DM183026 DM183026 Microchip Technology mTouch_Cap_Eval_Kit_Users_Guide_DS41385A.pdf description Description: KIT EVALUATION PIC16F/PIC24F
Packaging: Box
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: PIC16F727, PIC24FJ128GB106
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
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DM303007 DM303007 Microchip Technology 41378A.pdf description Description: KIT DEVELOPMENT KEELOQ 3
Packaging: Box
Frequency: 433.92MHz
Type: KeeLoq®
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MA330020 MA330020 Microchip Technology 100_PIM%20_DIMS.pdf Description: MODULE PLUG-IN DSPIC33F 44-QFN
Packaging: Box
For Use With/Related Products: dsPIC33FJ16GS504
Accessory Type: Plug-In Module (PIM)
Produkt ist nicht verfügbar
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MCP1631RD-MCC2 MCP1631RD-MCC2 Microchip Technology 40001291H.pdf Description: EVAL BRD FOR MCP1631HV PIC16F883
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: MCP1631HV, PIC16F883
Supplied Contents: Board(s)
Primary Attributes: 1 ~ 2 Cell- Li-Ion, 1 ~ 5 Cell- NiCd/NiMH, 1 ~ 2 1W LEDs
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Produkt ist nicht verfügbar
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MCP3422EV MCP3422EV Microchip Technology idcplg?IdcService=SS_GET_PAGE&nodeId=1406&dDocName=en538453# Description: BOARD EVAL MCP3422 PICKIT SERIAL
Packaging: Box
Number of Bits: 18
Contents: Board(s)
Data Interface: Serial
Sampling Rate (Per Second): 3.75
Utilized IC / Part: MCP3422
Supplied Contents: Board(s)
Number of A/D Converters: 2
Input Range: ±2.048V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MCP6031DM-PTPLS MCP6031DM-PTPLS Microchip Technology 51763a.pdf Description: EVAL BOARD FOR MCP6031
Packaging: Box
Function: Sensor to ADC Interface, Photodetector
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP6031
Supplied Contents: Board(s)
Primary Attributes: Photo-Current to Voltage Conversion
Secondary Attributes: RC Low-Pass Filter
Embedded: No
Part Status: Active
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SOT23-3EV-VREG SOT23-3EV-VREG Microchip Technology filehandler.aspx?ddocname=en539522 Description: BOARD EVAL VOLT REG SOT23-3
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11AA010T-I/TT 11AA010T-I/TT Microchip Technology 22067J.pdf Description: IC EEPROM 1KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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11AA02E48T-I/TT 11AA02E48T-I/TT Microchip Technology 11AA02E48-11AA02E64-2K-UNIO-Serial-EEPROMs-Data-Sheet-20002122E.pdf description Description: IC EEPROM 2KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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11LC010T-I/TT 11LC010T-I/TT Microchip Technology 22067J.pdf Description: IC EEPROM 1KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24AA014HT-I/MNY 24AA014HT-I/MNY Microchip Technology 22077B.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24AA014T-I/MNY 24AA014T-I/MNY Microchip Technology 21809G.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LAN8710A-EZC 00002164B.pdf
LAN8710A-EZC
Hersteller: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFNEP
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN-EP (5x5)
Duplex: Full
Part Status: Active
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Anzahl Preis
11+1.71 EUR
25+1.42 EUR
100+1.37 EUR
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LAN8720A-CP LAN8720A-LAN8720Ai-Data-Sheet-DS00002165.pdf
LAN8720A-CP
Hersteller: Microchip Technology
Description: IC TRANSCEIVER FULL 2/2 24QFNEP
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN-EP (4x4)
Duplex: Full
Part Status: Active
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Anzahl Preis
11+1.60 EUR
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100+1.28 EUR
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USB2517-JZX USB2517-USB2517i-Data-Sheet-00001598C.pdf
USB2517-JZX
Hersteller: Microchip Technology
Description: IC USB 2.0 7PORT HUB CTLR 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 130mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
DigiKey Programmable: Not Verified
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3+7.71 EUR
25+6.42 EUR
100+6.21 EUR
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APT102GA60L index.php?option=com_docman&task=doc_download&gid=123656
APT102GA60L
Hersteller: Microchip Technology
Description: IGBT 600V 183A 780W TO264
Produkt ist nicht verfügbar
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APT150GT120JR index.php?option=com_docman&task=doc_download&gid=6636
APT150GT120JR
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 170A 830W ISOTOP
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APT200GN60B2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT200GN60B2G
Hersteller: Microchip Technology
Description: IGBT TRENCH FIELD STOP 600V 283A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 13mJ (on), 11mJ (off)
Test Condition: 400V, 200A, 1Ohm, 15V
Gate Charge: 1180 nC
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 682 W
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APT200GN60J 5922-apt200gn60j-datasheet
APT200GN60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 283A 682W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 682 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 14.1 nF @ 25 V
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APT200GN60JDQ4 5922-apt200gn60j-datasheet
APT200GN60JDQ4
Hersteller: Microchip Technology
Description: IGBT MOD 600V 283A 682W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 283 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 682 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 14.1 nF @ 25 V
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APT27GA90BD15 index.php?option=com_docman&task=doc_download&gid=123668
APT27GA90BD15
Hersteller: Microchip Technology
Description: IGBT 900V 48A 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/98ns
Switching Energy: 413µJ (on), 287µJ (off)
Test Condition: 600V, 14A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 79 A
Power - Max: 223 W
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2+11.25 EUR
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APT2X151DL60J index.php?option=com_docman&task=doc_download&gid=6840
APT2X151DL60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 150A ISOTOP
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APT30D30BCTG 6863-apt30d30bctg-datasheet
APT30D30BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT35GA90BD15 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT35GA90BD15
Hersteller: Microchip Technology
Description: IGBT PT 900V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/104ns
Switching Energy: 642µJ (on), 382µJ (off)
Test Condition: 600V, 18A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 290 W
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APT38F80B2 6988-apt38f80b2-apt38f80l-datasheet
APT38F80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 41A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT43GA90BD30 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT43GA90BD30
Hersteller: Microchip Technology
Description: IGBT PT 900V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
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APT50GS60BRDQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GS60BRDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 600V 93A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/225ns
Switching Energy: 755µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 415 W
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APT50GS60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GS60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 93A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/225ns
Switching Energy: 755µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 415 W
Produkt ist nicht verfügbar
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APT50GT120B2RDQ2G
APT50GT120B2RDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/230ns
Switching Energy: 2330µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 625 W
Produkt ist nicht verfügbar
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APT50GT120B2RG 7103-apt50gt120b2rg-apt50gt120lrg-datasheet
APT50GT120B2RG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/230ns
Switching Energy: 2330µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 625 W
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APT50GT120LRDQ2G 7112-apt50gt120lrdq2g-datasheet
APT50GT120LRDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 106A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 2585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
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APT51F50J High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT51F50J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT54GA60BD30 index.php?option=com_docman&task=doc_download&gid=123655
APT54GA60BD30
Hersteller: Microchip Technology
Description: IGBT 600V 96A 416W TO247
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APT75GN120JDQ3 7246-apt75gn120jdq3-datasheet
APT75GN120JDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 124A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 124 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.8 nF @ 25 V
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APT75GN60LDQ3G 6471-apt75gn60ldq3g-datasheet
APT75GN60LDQ3G
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Part Status: Active
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
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APT80GA60B index.php?option=com_docman&task=doc_download&gid=123650
APT80GA60B
Hersteller: Microchip Technology
Description: IGBT 600V 143A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/158ns
Switching Energy: 840µJ (on), 751µJ (off)
Test Condition: 400V, 47A, 4.7Ohm, 15V
Gate Charge: 230 nC
Current - Collector (Ic) (Max): 143 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 625 W
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APT80GA90B 123651-apt80ga90b-apt80ga90s-datasheet
APT80GA90B
Hersteller: Microchip Technology
Description: IGBT PT 900V 145A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1652µJ (on), 1389µJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
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MA240017 39927c.pdf
MA240017
Hersteller: Microchip Technology
Description: MODULE PLUG-IN PIC24F16KA102 PIM
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MA180023 39932D.pdf
MA180023
Hersteller: Microchip Technology
Description: MODULE PLUG-IN PIC18F46J11 PIM
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VRF141 77328-vrf141-vrf141mp-datasheet
VRF141
Hersteller: Microchip Technology
Description: RF MOSFET 28V M174
Packaging: Box
Package / Case: M174
Current Rating (Amps): 20A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 250 mA
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VRF148A 77329-vrf148a-vrf148amp-datasheet
VRF148A
Hersteller: Microchip Technology
Description: RF MOSFET N-CHANNEL 50V M113
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VRF150 77330-vrf150-vrf150mp-datasheet
VRF150
Hersteller: Microchip Technology
Description: RF MOSFET N-CHANNEL 50V M174
Packaging: Box
Package / Case: M174
Current Rating (Amps): 1mA
Frequency: 150MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 11dB
Technology: MOSFET
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF151 77331-vrf151-vrf151mp-datasheet
VRF151
Hersteller: Microchip Technology
Description: RF MOSFET 50V M174
Packaging: Tray
Package / Case: M174
Current Rating (Amps): 1mA
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 14dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF151G 11465-vrf151g-datasheet
VRF151G
Hersteller: Microchip Technology
Description: RF MOSFET 50V M208
Packaging: Box
Package / Case: 4-SMD
Current Rating (Amps): 1mA
Frequency: 175MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 300W
Gain: 16dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M208
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 500 mA
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VRF152 77333-vrf152-vrf152mp-datasheet
VRF152
Hersteller: Microchip Technology
Description: MOSFET RF PWR N-CH 50V 150W M174
Packaging: Tube
Package / Case: M174
Current Rating (Amps): 50µA
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 14dB
Technology: MOSFET
Supplier Device Package: M174
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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VRF154FL 5654-datasheets
VRF154FL
Hersteller: Microchip Technology
Description: RF MOSFET 50V T2
Packaging: Tube
Package / Case: T2
Current Rating (Amps): 4mA
Frequency: 80MHz
Configuration: N-Channel
Power - Output: 600W
Gain: 17dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: T2
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 800 mA
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VRF157FL 5654-datasheets
VRF157FL
Hersteller: Microchip Technology
Description: MOSFET RF PWR N-CH 50V 600W T2
Packaging: Tube
Package / Case: T2
Current Rating (Amps): 4mA
Frequency: 80MHz
Configuration: N-Channel
Power - Output: 600W
Gain: 21dB
Technology: MOSFET
Supplier Device Package: T2
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 800 mA
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VRF2933 00004434A_VRF2933_RF_MOSFET_Datasheet.PDF
VRF2933
Hersteller: Microchip Technology
Description: RF MOSFET 50V M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 2mA
Frequency: 150MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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APTCV60TLM99T3G 7403-aptcv60tlm99t3g-datasheet
APTCV60TLM99T3G
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter - IGBT, FET
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Produkt ist nicht verfügbar
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APTGL60TL120T3G 7643-aptgl60tl120t3g-datasheet
APTGL60TL120T3G
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 80A 280W SP3
Produkt ist nicht verfügbar
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APTGT200TL60G 7781-aptgt200tl60g-datasheet
APTGT200TL60G
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 300A 652W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT50TL601G 7916-aptgt50tl601g-datasheet
APTGT50TL601G
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT75TL60T3G 7968-aptgt75tl60t3g-datasheet
APTGT75TL60T3G
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Tube
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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1+164.30 EUR
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AC103003 description PIC10F%20Capacitive%20Touch%20Board_ds41359a.pdf
AC103003
Hersteller: Microchip Technology
Description: BOARD DEMO PIC10F CAP TOUCH
Packaging: Box
Sensor Type: Touch, Capacitive
Utilized IC / Part: PIC10F204, PIC10F206
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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AC164127-3
AC164127-3
Hersteller: Microchip Technology
Description: BOARD DAUGHTER GRAPHIC PICTAIL
Packaging: Box
Function: LCD Touch Screen
Type: Display
Utilized IC / Part: AC164127-4 + AC164127-5 Bundle
Supplied Contents: Board(s)
Primary Attributes: 3.2" 320x240 QVGA
Embedded: Yes, MCU, 16/32-Bit
Produkt ist nicht verfügbar
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AC164127-4 51911A.pdf
AC164127-4
Hersteller: Microchip Technology
Description: BOARD GRAPH DISPLAY 3.2 240X320
Packaging: Bulk
Function: LCD Touch Screen
Type: Display
Supplied Contents: Board(s)
Primary Attributes: 3.2" 320x240 QVGA
Embedded: Yes, MCU, 16/32-Bit
Produkt ist nicht verfügbar
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AC164127-5 50001844b.pdf
AC164127-5
Hersteller: Microchip Technology
Description: BOARD GRAPH LCD CNTLR PICTAIL
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AC164135 70574A.pdf
AC164135
Hersteller: Microchip Technology
Description: BOARD DAUGHTER THERMAL/LINEAR
Packaging: Box
Contents: Board(s)
Sensor Type: Temperature, Thermocouple
Utilized IC / Part: TC1047A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
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AC164136 description
AC164136
Hersteller: Microchip Technology
Description: KIT DEVELOPMENT ZERO G 802.11
Produkt ist nicht verfügbar
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AC243003
AC243003
Hersteller: Microchip Technology
Description: SERIAL EEPROM PIM PICTAIL 4PACK
Packaging: Box
Function: EEPROM
Type: Memory
Contents: Board(s)
Utilized IC / Part: 11AA160, 24AA512, 25AA512, 93AA86B
Platform: PICtail™ Plus
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+84.43 EUR
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DM183026 description mTouch_Cap_Eval_Kit_Users_Guide_DS41385A.pdf
DM183026
Hersteller: Microchip Technology
Description: KIT EVALUATION PIC16F/PIC24F
Packaging: Box
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: PIC16F727, PIC24FJ128GB106
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
Produkt ist nicht verfügbar
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DM303007 description 41378A.pdf
DM303007
Hersteller: Microchip Technology
Description: KIT DEVELOPMENT KEELOQ 3
Packaging: Box
Frequency: 433.92MHz
Type: KeeLoq®
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MA330020 100_PIM%20_DIMS.pdf
MA330020
Hersteller: Microchip Technology
Description: MODULE PLUG-IN DSPIC33F 44-QFN
Packaging: Box
For Use With/Related Products: dsPIC33FJ16GS504
Accessory Type: Plug-In Module (PIM)
Produkt ist nicht verfügbar
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MCP1631RD-MCC2 40001291H.pdf
MCP1631RD-MCC2
Hersteller: Microchip Technology
Description: EVAL BRD FOR MCP1631HV PIC16F883
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: MCP1631HV, PIC16F883
Supplied Contents: Board(s)
Primary Attributes: 1 ~ 2 Cell- Li-Ion, 1 ~ 5 Cell- NiCd/NiMH, 1 ~ 2 1W LEDs
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Produkt ist nicht verfügbar
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MCP3422EV idcplg?IdcService=SS_GET_PAGE&nodeId=1406&dDocName=en538453#
MCP3422EV
Hersteller: Microchip Technology
Description: BOARD EVAL MCP3422 PICKIT SERIAL
Packaging: Box
Number of Bits: 18
Contents: Board(s)
Data Interface: Serial
Sampling Rate (Per Second): 3.75
Utilized IC / Part: MCP3422
Supplied Contents: Board(s)
Number of A/D Converters: 2
Input Range: ±2.048V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MCP6031DM-PTPLS 51763a.pdf
MCP6031DM-PTPLS
Hersteller: Microchip Technology
Description: EVAL BOARD FOR MCP6031
Packaging: Box
Function: Sensor to ADC Interface, Photodetector
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP6031
Supplied Contents: Board(s)
Primary Attributes: Photo-Current to Voltage Conversion
Secondary Attributes: RC Low-Pass Filter
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.89 EUR
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SOT23-3EV-VREG filehandler.aspx?ddocname=en539522
SOT23-3EV-VREG
Hersteller: Microchip Technology
Description: BOARD EVAL VOLT REG SOT23-3
Produkt ist nicht verfügbar
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11AA010T-I/TT 22067J.pdf
11AA010T-I/TT
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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11AA02E48T-I/TT description 11AA02E48-11AA02E64-2K-UNIO-Serial-EEPROMs-Data-Sheet-20002122E.pdf
11AA02E48T-I/TT
Hersteller: Microchip Technology
Description: IC EEPROM 2KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.71 EUR
Mindestbestellmenge: 3000
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11LC010T-I/TT 22067J.pdf
11LC010T-I/TT
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT SGL WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
24AA014HT-I/MNY 22077B.pdf
24AA014HT-I/MNY
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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24AA014T-I/MNY 21809G.pdf
24AA014T-I/MNY
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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