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MTA9ASF51272AZ-2G1B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G1B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G3B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA9ASF51272AZ-2G1A1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G1A2 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MT9JSF51272AZ-1G9E2 Micron Technology Inc. Description: MODULE DDR3 SDRAM 4GB 240UDIMM
Packaging: Tray
Package / Case: 240-UDIMM
Memory Size: 4GB
Memory Type: DDR3 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 1866
Produkt ist nicht verfügbar
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MT9JSF51272AZ-1G9P1 Micron Technology Inc. Description: MODULE DDR3 SDRAM 4GB 240UDIMM
Packaging: Bulk
Package / Case: 240-UDIMM
Memory Size: 4GB
Memory Type: DDR3 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 1866
Produkt ist nicht verfügbar
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MTA9ASF51272AZ-2G3B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G6B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Bulk
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G6F1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
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MT62F2G64D8EK-026 WT:C MT62F2G64D8EK-026 WT:C Micron Technology Inc. Description: IC DRAM 128GBIT PAR 441TFBGA
Packaging: Box
Package / Case: 441-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.2 GHz
Memory Format: DRAM
Supplier Device Package: 441-TFBGA (14x14)
Memory Interface: Parallel
Memory Organization: 2G x 64
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT29GZ9A9BPMET-046AIT.265 Micron Technology Inc. Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tray
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
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MT29GZ9A9BPMET-046AIT.265 TR Micron Technology Inc. Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tape & Reel (TR)
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
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MT29GZ9A9BPMET-046AAT.265 TR Micron Technology Inc. Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tape & Reel (TR)
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
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MT29GZ9A9BPMET-046AAT.265 Micron Technology Inc. Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tray
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
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MT46H32M32LFB5-5 IT:B MT46H32M32LFB5-5 IT:B Micron Technology Inc. MT46H_64M16LF%2C32M32LF%2CLG.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E2G32D4DE-046 AIT:A MT53E2G32D4DE-046 AIT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E2G32D4DE-046 AIT:A TR MT53E2G32D4DE-046 AIT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT28EW01GABA1HJS-0SIT MT28EW01GABA1HJS-0SIT Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.2 EUR
10+27.06 EUR
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MT28EW01GABA1HJS-0SIT TR MT28EW01GABA1HJS-0SIT TR Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT28EW01GABA1HJS-0SIT TR MT28EW01GABA1HJS-0SIT TR Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.03 EUR
10+25.05 EUR
25+24.26 EUR
50+23.67 EUR
100+23.08 EUR
250+22.97 EUR
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MT28EW01GABA1HPC-0SIT MT28EW01GABA1HPC-0SIT Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT28EW01GABA1LPC-0SIT TR MT28EW01GABA1LPC-0SIT TR Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT28EW01GABA1LPC-0SIT TR MT28EW01GABA1LPC-0SIT TR Micron Technology Inc. MT28EWzzzABA1.pdf Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.44 EUR
10+25.41 EUR
25+24.61 EUR
50+24.01 EUR
100+23.42 EUR
250+23.32 EUR
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MT41K256M8DA-107 AAT:K TR MT41K256M8DA-107 AAT:K TR Micron Technology Inc. 2gb_auto_ddr3l_sdram.pdf?rev=4280cdeeb9b84f25ac583e38d19cb7bc Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Grade: Automotive
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT41K256M8DA-107 AAT:K TR MT41K256M8DA-107 AAT:K TR Micron Technology Inc. 2gb_auto_ddr3l_sdram.pdf?rev=4280cdeeb9b84f25ac583e38d19cb7bc Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Grade: Automotive
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.72 EUR
10+9.04 EUR
25+8.76 EUR
50+8.56 EUR
100+8.35 EUR
250+8.08 EUR
500+7.95 EUR
Mindestbestellmenge: 2
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MT41K256M8DA-125:K TR MT41K256M8DA-125:K TR Micron Technology Inc. 2gb-ddr3-sdram.pdf Description: IC DRAM 2GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Memory Interface: Parallel
Access Time: 13.75 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT41K256M8DA-125:K TR MT41K256M8DA-125:K TR Micron Technology Inc. 2gb-ddr3-sdram.pdf Description: IC DRAM 2GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Memory Interface: Parallel
Access Time: 13.75 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.37 EUR
10+6.86 EUR
25+6.66 EUR
50+6.5 EUR
100+6.35 EUR
250+6.14 EUR
500+5.99 EUR
1000+5.98 EUR
Mindestbestellmenge: 3
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MT53E2G32D4DT-046 WT:A TR MT53E2G32D4DT-046 WT:A TR Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E2G32D4DT-046 WT:A MT53E2G32D4DT-046 WT:A Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E2G32D4DT-046 AAT:A TR MT53E2G32D4DT-046 AAT:A TR Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E2G32D4DT-046 AAT:A MT53E2G32D4DT-046 AAT:A Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E2G32D4DT-046 AIT:A TR MT53E2G32D4DT-046 AIT:A TR Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E2G32D4DT-046 AIT:A MT53E2G32D4DT-046 AIT:A Micron Technology Inc. Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N25Q032A13ESC40G N25Q032A13ESC40G Micron Technology Inc. n25q_32mb_3v_65nm.pdf?rev=27fc6016fc5249adb4bb8f221e72b395 Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT40A1G8SA-075 :E TR Micron Technology Inc. Description: DDR4-2666 8Gb (1GX8)0.750ns CL18
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+11.4 EUR
4000+11.25 EUR
Mindestbestellmenge: 2000
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MT40A512M16LY-075:E TR Micron Technology Inc. Description: DDR4-2666 8Gb (512MX16)0.750ns C
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 512M x 16
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+19.69 EUR
4000+19.38 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
MTA9ASF51272AZ-2G1B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G1B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G3B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA9ASF51272AZ-2G1A1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G1A2
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2133
Produkt ist nicht verfügbar
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MT9JSF51272AZ-1G9E2
Hersteller: Micron Technology Inc.
Description: MODULE DDR3 SDRAM 4GB 240UDIMM
Packaging: Tray
Package / Case: 240-UDIMM
Memory Size: 4GB
Memory Type: DDR3 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 1866
Produkt ist nicht verfügbar
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MT9JSF51272AZ-1G9P1
Hersteller: Micron Technology Inc.
Description: MODULE DDR3 SDRAM 4GB 240UDIMM
Packaging: Bulk
Package / Case: 240-UDIMM
Memory Size: 4GB
Memory Type: DDR3 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 1866
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTA9ASF51272AZ-2G3B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA9ASF51272PZ-2G6B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Bulk
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTA9ASF51272PZ-2G6F1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288RDIMM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT62F2G64D8EK-026 WT:C
MT62F2G64D8EK-026 WT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 128GBIT PAR 441TFBGA
Packaging: Box
Package / Case: 441-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.2 GHz
Memory Format: DRAM
Supplier Device Package: 441-TFBGA (14x14)
Memory Interface: Parallel
Memory Organization: 2G x 64
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT29GZ9A9BPMET-046AIT.265
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tray
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT29GZ9A9BPMET-046AIT.265 TR
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tape & Reel (TR)
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT29GZ9A9BPMET-046AAT.265 TR
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tape & Reel (TR)
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT29GZ9A9BPMET-046AAT.265
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 32GBIT VFBGA
Packaging: Tray
Memory Size: 32Gbit
Technology: FLASH - NAND
Memory Format: FLASH, RAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT46H32M32LFB5-5 IT:B MT46H_64M16LF%2C32M32LF%2CLG.pdf
MT46H32M32LFB5-5 IT:B
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DE-046 AIT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E2G32D4DE-046 AIT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DE-046 AIT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E2G32D4DE-046 AIT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1HJS-0SIT MT28EWzzzABA1.pdf
MT28EW01GABA1HJS-0SIT
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.2 EUR
10+27.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1HJS-0SIT TR MT28EWzzzABA1.pdf
MT28EW01GABA1HJS-0SIT TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1HJS-0SIT TR MT28EWzzzABA1.pdf
MT28EW01GABA1HJS-0SIT TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.03 EUR
10+25.05 EUR
25+24.26 EUR
50+23.67 EUR
100+23.08 EUR
250+22.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1HPC-0SIT MT28EWzzzABA1.pdf
MT28EW01GABA1HPC-0SIT
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1LPC-0SIT TR MT28EWzzzABA1.pdf
MT28EW01GABA1LPC-0SIT TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT28EW01GABA1LPC-0SIT TR MT28EWzzzABA1.pdf
MT28EW01GABA1LPC-0SIT TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 95 ns
Memory Organization: 128M x 8, 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.44 EUR
10+25.41 EUR
25+24.61 EUR
50+24.01 EUR
100+23.42 EUR
250+23.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MT41K256M8DA-107 AAT:K TR 2gb_auto_ddr3l_sdram.pdf?rev=4280cdeeb9b84f25ac583e38d19cb7bc
MT41K256M8DA-107 AAT:K TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Grade: Automotive
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT41K256M8DA-107 AAT:K TR 2gb_auto_ddr3l_sdram.pdf?rev=4280cdeeb9b84f25ac583e38d19cb7bc
MT41K256M8DA-107 AAT:K TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Grade: Automotive
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+9.04 EUR
25+8.76 EUR
50+8.56 EUR
100+8.35 EUR
250+8.08 EUR
500+7.95 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MT41K256M8DA-125:K TR 2gb-ddr3-sdram.pdf
MT41K256M8DA-125:K TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Memory Interface: Parallel
Access Time: 13.75 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT41K256M8DA-125:K TR 2gb-ddr3-sdram.pdf
MT41K256M8DA-125:K TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Memory Interface: Parallel
Access Time: 13.75 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.37 EUR
10+6.86 EUR
25+6.66 EUR
50+6.5 EUR
100+6.35 EUR
250+6.14 EUR
500+5.99 EUR
1000+5.98 EUR
Mindestbestellmenge: 3
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MT53E2G32D4DT-046 WT:A TR
MT53E2G32D4DT-046 WT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DT-046 WT:A
MT53E2G32D4DT-046 WT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DT-046 AAT:A TR
MT53E2G32D4DT-046 AAT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DT-046 AAT:A
MT53E2G32D4DT-046 AAT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DT-046 AIT:A TR
MT53E2G32D4DT-046 AIT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E2G32D4DT-046 AIT:A
MT53E2G32D4DT-046 AIT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 64GBIT 2.133GHZ FBGA
Packaging: Tray
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Grade: Automotive
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N25Q032A13ESC40G n25q_32mb_3v_65nm.pdf?rev=27fc6016fc5249adb4bb8f221e72b395
N25Q032A13ESC40G
Hersteller: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT40A1G8SA-075 :E TR
Hersteller: Micron Technology Inc.
Description: DDR4-2666 8Gb (1GX8)0.750ns CL18
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+11.4 EUR
4000+11.25 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
MT40A512M16LY-075:E TR
Hersteller: Micron Technology Inc.
Description: DDR4-2666 8Gb (512MX16)0.750ns C
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 512M x 16
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+19.69 EUR
4000+19.38 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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